Datasheet kf7n80p-f Datasheet

2012. 3. 29 1/3

SEMICONDUCTOR

TECHNICAL DATA

KF7N80P/F

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 0

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for active power factor

correction and switching mode power supplies.

FEATURES

·V

DSS

=800V, ID=7A

·Drain-Source ON Resistance :

R

DS(ON)

(Max)=1.45Ω @V

GS

=10V

·Qg(typ.)= 45nC

MAXIMUM RATING (Tc=25℃)

* : Drain current limited by maximum junction temperature.

CHARACTERISTIC

SYMBOL

RATING

UNIT

KF7N80P KF7N80F

Drain-Source Voltage

V

DSS

800 V

Gate-Source Voltage

V

GSS

±30

V

Drain Current

@T

C

=25℃

I

D

7 7*

A

@T

C

=100℃

4.4 4.4*

Pulsed (Note1)

I

DP

20 20*

Single Pulsed Avalanche Energy
(Note 2)

E

AS

360

mJ

Repetitive Avalanche Energy
(Note 1)

E

AR

11

mJ

Peak Diode Recovery dv/dt
(Note 3)

dv/dt 4.5

V/ns

Drain Power
Dissipation

Tc=25℃

P

D

160 44.6 W

Derate above 25℃

1.28 0.36

W/℃

Maximum Junction Temperature

T

j

150

℃

Storage Temperature Range

T

stg

-55～150

℃

Thermal Characteristics

Thermal Resistance, Junction-to-Case

R

thJC

0.78 2.8

℃/W

Thermal Resistance,
Junction-to-Ambient

R

thJA

62.5 62.5

℃/W

PIN CONNECTION

KF7N80P

KF7N80F

E

I

K

D

E

K

L

D

Q

A

M

NN

123

A

M

NN

123

F

G

B

Q

L

J

1. GATE

2. DRAIN

3. SOURCE

TO-220AB

F

B

G

J

O

C

P

H

C

O

R

H

1. GATE

2. DRAIN

3. SOURCE

DIM MILLIMETERS

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

15.95 MAX

1.3+0.1/-0.05

0.5+0.1/-0.05

13.08 0.3

1.4 0.1

1.27 0.1

2.54 0.2

4.5 0.2

2.4 0.2

9.2 0.2

DIM

A

B

C

D

E

F

G

H

J

K

L

M

N

O

Q

R

_

9.9 0.2

+

_

+

0.8 0.1
_

3.6 0.2

+

_

+

2.8 0.1

3.7

1.5
_

+

1.46
_

+

_

+
_

+

_

+
_

+
_

+

MILLIMETERS

_

10.16 0.2

+
_

15.87 0.2

+

_

2.54 0.2

+

_

0.8 0.1

+

_

3.18 0.1

+

_

3.3 0.1

+

_

12.57 0.2

+

_

0.5 0.1

+

_

13.0 0.5

+

_

3.23 0.1

+

1.47 MAX

1.47 MAX

_

2.54 0.2

+
_

6.68 0.2

+
_

+

4.7 0.2

_

2.76 0.2

+

TO-220IS (1)

G

D

S

2012. 3. 29 2/3

KF7N80P/F

Revision No : 0

ELECTRICAL CHARACTERISTICS (Tc=25℃)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage

BV

DSS

I

D

=250μA, V

GS

=0V

800 - - V

Breakdown Voltage Temperature Coefficient

ΔBV

DSS

/ΔT

jID

=250μA, Referenced to 25℃

- 0.65 -

V/℃

Drain Cut-off Current

I

DSS

VDS=800V, VGS=0V

- - 10

μA

Gate Threshold Voltage

V

th

VDS=VGS, I

D

=250μA

2.5 - 4.5 V

Gate Leakage Current

I

GSS

V

GS

=±30V, V

DS

=0V

- -

±100

nA

Drain-Source ON Resistance

R

DS(ON)

VGS=10V, ID=3.5A

- 1.2 1.45

Ω

Dynamic

Total Gate Charge

Q

g

VDS=480V, ID=7A

V

GS

=10V (Note4,5)

- 45 -

nCGate-Source Charge

Q

gs

- 8 -

Gate-Drain Charge

Q

gd

- 20 -

Turn-on Delay time

t

d(on)

VDD=300V

I

D

=7A

R

G

=25Ω (Note4,5)

- 50 -

ns

Turn-on Rise time

t

r

- 50 -

Turn-off Delay time

t

d(off)

- 120 -

Turn-off Fall time

t

f

- 50 -

Input Capacitance

C

iss

VDS=25V, VGS=0V, f=1.0MHz

- 1450 -

pF

Output Capacitance

C

oss

- 150 -

Reverse Transfer Capacitance

C

rss

- 20 -

Source-Drain Diode Ratings

Continuous Source Current

I

S

VGS<V

th

- - 7
A

Pulsed Source Current

I

SP

- - 28

Diode Forward Voltage

V

SD

IS=7.0A, VGS=0V

- - 1.4 V

Reverse Recovery Time

t

rr

IS=7.0A, VGS=0V,

dIs/dt=100A/

μs

- 520 - ns

Reverse Recovery Charge

Q

rr

- 6.5 -

μC

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 2) L =14mH, I

S

=7A, VDD=50V, R

G

=25Ω, Starting Tj=25℃.

Note 3) I

S

≤7.0A, dI/dt≤100A/㎲, VDD≤BV

DSS

, Starting T

j

=25℃.

Note 4) Pulse Test : Pulse width

≤ 300㎲, Duty Cycle ≤ 2%.

Note 5) Essentially independent of operating temperature.

Marking

1

KF7N80

001

P

1

KF7N80
F

2

001

2

1

PRODUCT NAME

2

LOT NO

2012. 3. 29 3/3

KF7N80P/F

Revision No : 0

Fig1. ID - V

100

(A)

D

10

1

Drain Current I

0.1

0.1 10

DSS

1.2

VGS = 0V

= 250

I

DS

1.1

1.0

0.9

0.8

Normalized Breakdown Voltage BV

-100 -50

1100

Drain - Source Voltage VDS (V)

Fig3. BV

DSS

050

Junction Temperature Tj ( )

- T

DS

VGS=10V

VGS=6V

VGS=5V

j

C

100

150

(A)

D

10

10

VDS=30V

1

0

100

C

Fig2. ID - V

25

C

GS

Drain Current I

-1

10

684102

Gate - Source Voltage VGS (V)

Fig4. R

3.0

2.5

(Ω)

2.0

DS(ON)

1.5

1.0

0.5

On - Resistance R

0

042126810

Drain Current I

DS(ON)

- I

D

D

VGS=6V

VGS=10V

(A)

(A)

S

Fig5. IS - V

2

10

1

10

100

SD

3.0

=10V

V

GS

= 7 A

I

DS

2.5

C

25

C

2.0

Fig6. R

DS(ON)

- T

j

1.5

0

10

Reverse Drain Current I

-1

10

0.4 0.8 1.0 1.20.6 1.4

Source - Drain Voltage V

SD

(V)

1.0

0.5

Normalized On Resistance

0.0

Junction Temperature Tj ( )

0 50-100 -50 100 150

C

2012. 3. 29 4/7

KF7N80P/F

Revision No : 0

Fig 7. C - V

4

10

3

10

2

10

Capacitance (pF)

1

10

0 10203040

DS

Drain - Source Voltage VDS (V)

Fig9. Safe Operation Area

2

(KF7N80P)

(V)

DS

10

2

10

1

10

(A)

D

0

10

-1

10

Drain Current I

10-

Tc= 25
Tj = 150
Single pulse

2

0

10

Operation in this
area is limited by R

C

C

10

DS(ON)

1

10

Drain - Source Voltage V

C

C

C

10µs

100µs

1ms

10ms

DC

3

rss

iss

oss

12

ID=7A

10

(V)

GS

8

6

4

2

Gate - Source Voltage V

0

Gate - Charge

Fig10. Safe Operation Area

2

10

1

10

(A)

D

0

10

Operation in this
area is limited by R

-1

10

Drain Current I

2

10-

0

10

10

Drain - Source Voltage V

Fig8. Qg- V

V

= 480V

DS

DS(ON)

1

GS

Qg (nC)

2

10

35 45401552520 30100

(KF7N80F)

(V)

DS

10

10µs

100µs

1ms

10ms

DC

3

Fig11. ID - T

j

8

7

6

(A)

D

5

4

3

2

Drain Current I

1

0

50 15012510025 750

Junction Temperature Tj ( )

C

2012. 3. 29 5/7

KF7N80P/F

Revision No : 0

)

Fig12. Transient Thermal Response Curve

0

10

Duty=0.5

0.2

0.1

-1

10

0.05

0.02

0.01

Transient Thermal Resistance

-2

10

-5

10

Single Pulse

-4

10

P

- R

- Duty Factor, D= t1/t

-3

10

-2

10

-1

10

TIME (sec)

Fig13. Transient Thermal Response Curve

DM

= 2.8 C/W Max.

th(j-c)

10

t

1

0

(KF7N80P)

t

2

2

10

1

0

10

Duty=0.5

0.2

-1

10

0.1

0.05

0.02

0.01

Transient Thermal Resistance

-2

10

-5

10

-4

10

Single Pulse

(KF7N80F)

P

DM

- R

- Duty Factor, D= t1/t

-3

10

-2

10

-1

10

t

1

= 2.8 C/W Max.

th(j-c)

0

10

t

2

2

1

10

TIME (sec

2012. 3. 29 6/7

KF7N80P/F

Revision No : 0

Fig14. Gate Charge

V

GS

Fast
Recovery
Diode

0.8 V

DSS

I

D

1.0 mA

V

GS

Fig15. Single Pulsed Avalanche Energy

50V

10 V

I

D

V

DS

BV

DSS

Q

gs

EAS= LI

Q

gd

1

2

AS

2

BV

BV

DSS

Q

g

DSS

- V

DD

Q

L

I

AS

25Ω

10 V

Fig16. Resistive Load Switching

0.5 V

DSS

25 Ω

10V

I

(t)

V

DS

V

GS

V

DD

D

VDS(t)

Time

t

p

V

DS

90%

R

L

10%

V

GS

t

V

DS

V

GS

t

d(on)

t

r

on

t

d(off)

t

f

t

off

2012. 3. 29 7/7

KF7N80P/F

Revision No : 0

Fig17. Source - Drain Diode Reverse Recovery and dv /dt

0.8 V

DSS

I

F

10V

DUT

driver

V

GS

V

DS

I

S

I

SD

(DUT)

V

(DUT)

DS

Body Diode Forword Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

SD

Body Diode Forword Voltage drop

di/dt

V

DD