Page 1
2012. 9. 27 1/6
SEMICONDUCTOR
TECHNICAL DATA
KF7N68F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
Revision No : 0
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
·V
DSS
=680V, ID=7A
·Drain-Source ON Resistance :
R
DS(ON)
(Max)=1.25Ω @V
GS
=10V
·Qg(typ.)= 24nC
MAXIMUM RATING (Tc=25℃)
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
CHARACTERISTIC
SYMBOL
RATING UNIT
Drain-Source Voltage
V
DSS
680 V
Gate-Source Voltage
V
GSS
±30
V
Drain Current
@T
C
=25℃
I
D
7*
A
@T
C
=100℃
4.2*
Pulsed (Note1)
I
DP
18*
Single Pulsed Avalanche Energy
(Note 2)
E
AS
212
mJ
Repetitive Avalanche Energy
(Note 1)
E
AR
1.6
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt 4.5
V/ns
Drain Power
Dissipation
Tc=25℃
P
D
52 W
Derate above 25℃
0.42
W/℃
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Characteristics
Thermal Resistance, Junction-to-Case
R
thJC
2.4
℃/W
Thermal Resistance,
Junction-to-Ambient
R
thJA
62.5
℃/W
E
K
L
D
Q
A
F
B
G
M
NN
123
J
TO-220IS (1)
C
O
R
H
1. GATE
2. DRAIN
3. SOURCE
G
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
Q
R
D
S
MILLIMETERS
_
10.16 0.2
+
_
15.87 0.2
+
_
2.54 0.2
+
_
0.8 0.1
+
_
3.18 0.1
+
_
3.3 0.1
+
_
12.57 0.2
+
_
0.5 0.1
+
_
13.0 0.5
+
_
3.23 0.1
+
1.47 MAX
1.47 MAX
_
2.54 0.2
+
_
6.68 0.2
+
_
+
4.7 0.2
_
2.76 0.2
+
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2012. 9. 27 2/6
KF7N68F
Revision No : 0
ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250μA, V
GS
=0V
680 - - V
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
jID
=250μA, Referenced to 25℃
- 0.65 -
V/℃
Drain Cut-off Current
I
DSS
VDS=680V, VGS=0V,
- - 10
μA
Gate Threshold Voltage
V
th
VDS=VGS, I
D
=250μA
2.5 - 4.5 V
Gate Leakage Current
I
GSS
V
GS
=±30V, V
DS
=0V
- -
±100
nA
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=3.5A
- 1.0 1.25
Ω
Dynamic
Total Gate Charge
Q
g
VDS=520V, ID=7.0A
V
GS
=10V (Note4,5)
- 24 -
nCGate-Source Charge
Q
gs
- 5.4 -
Gate-Drain Charge
Q
gd
- 9.5 -
Turn-on Delay time
t
d(on)
VDD=325V
I
D
=7.0A
R
G
=25Ω (Note4,5)
- 30 -
ns
Turn-on Rise time
t
r
- 30 -
Turn-off Delay time
t
d(off)
- 50 -
Turn-off Fall time
t
f
- 25 -
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1.0MHz
- 1010 -
pF
Output Capacitance
C
oss
- 111 -
Reverse Transfer Capacitance
C
rss
- 7.0 -
Gate Resistance
R
g
- 2.5 5
Ω
Source-Drain Diode Ratings
Continuous Source Current
I
S
VGS<V
th
- - 7
A
Pulsed Source Current
I
SP
- - 28
Diode Forward Voltage
V
SD
IS=7.0A, VGS=0V
- - 1.4 V
Reverse Recovery Time
t
rr
IS=7.0A, VGS=0V,
dIs/dt=100A/
μs
- 350 - ns
Reverse Recovery Charge
Q
rr
- 3.6 -
μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =8.1mH, I
S
=7.0A, VDD=50V, R
G
=25Ω, Starting Tj=25℃.
Note 3) I
S
≤7.0A, dI/dt≤200A/㎲, VDD≤BV
DSS
, Starting T
j
=25℃.
Note 4) Pulse Test : Pulse width
≤ 300㎲, Duty Cycle ≤ 2%.
Note 5) Essentially independent of operating temperature.
Marking
1
KF7N68
F
2
713
1
PRODUCT NAME
2
LOT NO
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2012. 9. 27 3/6
KF7N68F
Revision No : 0
100
(A)
D
10
1
Drain Current I
0.1
0.1 10
DSS
1.2
VGS = 0V
= 250
I
DS
1.1
1.0
Fig1. ID - V
1100
DS
VGS=10V, 7V
VGS=5V
Drain - Source Voltage VDS (V)
Fig3. BV
DSS
- T
j
VDS=20V
1
10
(A)
D
0
10
Drain Current I
-1
10
3.0
2.5
(Ω)
2.0
DS(ON)
1.5
100
Fig2. ID - V
C
25
GS
C
684102
Gate - Source Voltage VGS (V)
Fig4. R
DS(ON)
- I
D
VGS=7V
0.9
0.8
Normalized Breakdown Voltage BV
-100 -50
050
Junction Temperature Tj ( )
(A)
S
Fig5. IS - V
1
10
150
0
10
C
SD
25
C
Reverse Drain Current I
-1
10
0.2 0.4 0.8 1.0 1.20.6 1.4
C
100
150
1.0
0.5
On - Resistance R
0
0126931815
Drain Current I
Fig6. R
3.0
=10V
V
GS
= 3.75A
I
DS
2.5
2.0
1.5
1.0
0.5
Normalized On Resistance
0.0
DS(ON)
0 50-100 -50 100 150
(A)
D
- T
VGS=10V
j
Source - Drain Voltage V
SD
(V)
Junction Temperature Tj ( )
C
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2012. 9. 27 4/6
KF7N68F
Revision No : 0
)
Fig 7. C - V
4
10
3
10
2
10
Capacitance (pF)
1
10
0
10
0 10203040
DS
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area
2
10
Operation in this
area is limited by R
(A)
1
10
D
0
10
Drain Current I
Tc= 25
Tj = 150
Single nonrepetitive pulse
-1
10
0
10
C
C
DS(ON)
DC
1
10
10
Drain - Source Voltage V
2
DS
100µs
1ms
10ms
(V)
C
10µs
Fig8. Qg- V
12
ID=7A
V
iss
C
oss
C
rss
(V)
GS
10
8
V
DS
6
4
V
DS
= 130V
DS
= 325V
GS
= 520V
2
Gate - Source Voltage V
0
4
0
8
Gate - Charge
Fig10. ID - T
201624
Qg (nC)
j
28 3212
8
6
(A)
D
4
2
Drain Current I
3
10
0
0
Junction Temperature Tj ( )
75 15012550 10025
C
Fig10. Transient Thermal Response Curve
1
10
Duty=0.5
0
10
0.2
0.
1
0.05
-1
10
0.02
.01
0
S
-2
10
-5
10
10
ingle Pulse
-4
-3
10
-2
10
Normalized Transient Thermal Resistance
TIME (sec
P
DM
- Duty Factor, D= t1/t
-1
10
10
t
1
t
2
2
0
10
1
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2012. 9. 27 5/6
KF7N68F
Revision No : 0
Fig11. Gate Charge
V
GS
Fast
Recovery
Diode
0.8 V
DSS
I
D
1.0 mA
V
GS
Fig12. Single Pulsed Avalanche Energy
50V
10 V
I
D
V
DS
BV
DSS
Q
gs
EAS= LI
Q
gd
1
2
AS
2
BV
BV
DSS
Q
- V
g
DSS
DD
Q
L
I
AS
25Ω
10 V
Fig13. Resistive Load Switching
0.5 V
DSS
25 Ω
10V
I
(t)
V
DS
V
GS
V
DD
D
VDS(t)
Time
t
p
V
DS
90%
R
L
10%
V
GS
t
V
DS
V
GS
t
d(on)
t
r
on
t
d(off)
t
f
t
off
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2012. 9. 27 6/6
KF7N68F
Revision No : 0
Fig14. Source - Drain Diode Reverse Recovery and dv /dt
0.8 V
DSS
I
F
10V
DUT
driver
V
GS
V
DS
I
S
I
SD
(DUT)
V
(DUT)
DS
Body Diode Forword Current
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
Body Diode Forword Voltage drop
di/dt
V
DD
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