Datasheet kf7n60p-f Datasheet

2010. 11. 23 1/7

SEMICONDUCTOR

TECHNICAL DATA

KF7N60P/F

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 0

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for active power factor

correction and switching mode power supplies.

FEATURES

·V

DSS

=600V, ID=7A

·

Drain-Source ON Resistance :

R

DS(ON)

(Max)=1.2Ω @V

GS

=10V

·

Qg(typ.)= 19nC

MAXIMUM RATING (Tc=25℃)

* : Drain current limited by maximum junction temperature.

CHARACTERISTIC

SYMBOL

RATING

UNIT

KF7N60P KF7N60F

Drain-Source Voltage

V

DSS

600 V

Gate-Source Voltage

V

GSS

±30

V

Drain Current

@T

C

=25℃

I

D

7 7*

A

@T

C

=100℃

4 4*

Pulsed (Note1)

I

DP

20 20*

Single Pulsed Avalanche Energy
(Note 2)

E

AS

210

mJ

Repetitive Avalanche Energy
(Note 1)

E

AR

11

mJ

Peak Diode Recovery dv/dt
(Note 3)

dv/dt 4.5

V/ns

Drain Power
Dissipation

Tc=25℃

P

D

108 44.6 W

Derate above 25℃

0.87 0.36

W/℃

Maximum Junction Temperature

T

j

150

℃

Storage Temperature Range

T

stg

-55～150

℃

Thermal Characteristics

Thermal Resistance, Junction-to-Case

R

thJC

1.15 2.8

℃/W

Thermal Resistance,
Junction-to-Ambient

R

thJA

62.5 62.5

℃/W

PIN CONNECTION

KF7N60P

KF7N60F

E

I

K

D

E

K

L

D

Q

A

M

NN

123

A

M

NN

123

F

G

B

Q

L

J

1. GATE

2. DRAIN

3. SOURCE

TO-220AB

F

B

G

J

O

C

P

H

C

O

R

H

1. GATE

2. DRAIN

3. SOURCE

DIM MILLIMETERS

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

15.95 MAX

1.3+0.1/-0.05

0.5+0.1/-0.05

13.08 0.3

1.4 0.1

1.27 0.1

2.54 0.2

4.5 0.2

2.4 0.2

9.2 0.2

DIM

A

B

C

D

E

F

G

H

J

K

L

M

N

O

Q

R

_

9.9 0.2

+

_

+

0.8 0.1
_

3.6 0.2

+

_

+

2.8 0.1

3.7

1.5
_

+

1.46
_

+

_

+
_

+

_

+
_

+
_

+

MILLIMETERS

_

10.16 0.2

+
_

15.87 0.2

+

_

2.54 0.2

+

_

0.8 0.1

+

_

3.18 0.1

+

_

3.3 0.1

+

_

12.57 0.2

+

_

0.5 0.1

+

_

13.0 0.5

+

_

3.23 0.1

+

1.47 MAX

1.47 MAX

_

2.54 0.2

+
_

6.68 0.2

+
_

+

4.7 0.2

_

2.76 0.2

+

TO-220IS (1)

G

D

S

2010. 11. 23 2/7

KF7N60P/F

Revision No : 0

ELECTRICAL CHARACTERISTICS (Tc=25℃)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage

BV

DSS

I

D

=250μA, V

GS

=0V

600 - - V

Breakdown Voltage Temperature Coefficient

ΔBV

DSS

/ΔT

jID

=250μA, Referenced to 25℃

- 0.65 -

V/℃

Drain Cut-off Current

I

DSS

VDS=600V, VGS=0V

- - 10

μA

Gate Threshold Voltage

V

th

VDS=VGS, I

D

=250μA

2.5 - 4.5 V

Gate Leakage Current

I

GSS

V

GS

=±30V, V

DS

=0V

- -

±100

nA

Drain-Source ON Resistance

R

DS(ON)

VGS=10V, ID=3.5A

- 0.95 1.2

Ω

Dynamic

Total Gate Charge

Q

g

VDS=480V, ID=7A

V

GS

=10V (Note4,5)

- 19 -

nCGate-Source Charge

Q

gs

- 4.4 -

Gate-Drain Charge

Q

gd

- 7 -

Turn-on Delay time

t

d(on)

VDD=300V

I

D

=7A

R

G

=25Ω (Note4,5)

- 22 -

ns

Turn-on Rise time

t

r

- 25 -

Turn-off Delay time

t

d(off)

- 57 -

Turn-off Fall time

t

f

- 24 -

Input Capacitance

C

iss

VDS=25V, VGS=0V, f=1.0MHz

- 900 -

pF

Output Capacitance

C

oss

- 100 -

Reverse Transfer Capacitance

C

rss

- 7.5 -

Source-Drain Diode Ratings

Continuous Source Current

I

S

VGS<V

th

- - 7
A

Pulsed Source Current

I

SP

- - 28

Diode Forward Voltage

V

SD

IS=7.0A, VGS=0V

- - 1.4 V

Reverse Recovery Time

t

rr

IS=7.0A, VGS=0V,

dIs/dt=100A/μ

s

- 320 - ns

Reverse Recovery Charge

Q

rr

- 3.1 -

μC

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 2) L =8mH, I

S

=7A, VDD=50V, R

G

=25Ω, Starting Tj=25℃.

Note 3) I

S

≤7.0A, dI/dt≤100A/㎲, VDD≤BV

DSS

, Starting T

j

=25℃.

Note 4) Pulse Test : Pulse width ≤

300㎲, Duty Cycle ≤ 2%.

Note 5) Essentially independent of operating temperature.

Marking

1

KF7N60

001

P

1

KF7N60
F

2

001

2

1

PRODUCT NAME

2

LOT NO

2010. 11. 23 3/7

KF7N60P/F

Revision No : 0

100

(A)

D

10

1

Drain Current I

0.1

0.1 10

DSS

1.2

VGS = 0V

= 250

I

DS

1.1

1.0

Fig1. ID - V

DS

VGS=10V

VGS=6V

VGS=5V

1100

Drain - Source Voltage VDS (V)

Fig3. BV

DSS

- T

j

VDS=30V

1

10

(A)

D

0

10

Drain Current I

-1

10

3.0

2.5

(Ω)

2.0

DS(ON)

1.5

100

Fig2. ID - V

C

25

GS

C

684102

Gate - Source Voltage VGS (V)

Fig4. R

VGS=6V

DS(ON)

- I

D

0.9

0.8

Normalized Breakdown Voltage BV

-100 -50

050

Junction Temperature Tj ( )

(A)

S

Fig5. IS - V

2

10

1

10

0

10

100

SD

C

25

Reverse Drain Current I

-1

10

0.4 0.8 1.0 1.20.6 1.4 1.8

C

C

100

150

1.0

0.5

On - Resistance R

0

01052015

Drain Current I

Fig6. R

3.0

=10V

V

GS

= 7 A

I

DS

2.5

2.0

1.5

1.0

0.5

Normalized On Resistance

0.0
0 50-100 -50 100 150

DS(ON)

VGS=10V

(A)

D

- T

j

Source - Drain Voltage V

SD

(V)

Junction Temperature Tj ( )

C

2010. 11. 23 4/7

KF7N60P/F

Revision No : 0

Fig 7. C - V

4

10

3

10

2

10

Capacitance (pF)

1

10

0

10

0 10203040

DS

Drain - Source Voltage VDS (V)

Fig9. Safe Operation Area

2

10

DS

(KF7N60P)

(V)

2

10

1

10

(A)

D

0

10

-1

10

Drain Current I

2

10

10

Tc= 25
Tj = 150
Single pulse

0

Operation in this
area is limited by R

C

C

DS(ON)

1

10

Drain - Source Voltage V

Fig8. Qg- V

12

ID=7A

10

(V)

C

iss

C

oss

GS

8

6

V

= 480V

DS

GS

4

C

rss

2

Gate - Source Voltage V

0

3

0

6

Gate - Charge

151218

Qg (nC)

21 249

Fig10. Safe Operation Area

2

10

DS

(KF7N60F)

(V)

10µs

100µs

1ms

10ms

DC

3

10

10µs
100µs

1ms

10ms

DC

10

2

10

1

10

(A)

D

0

10

Operation in this
area is limited by R

-1

10

Drain Current I

3

2

10

10

Tc= 25

C
Tj = 150
Single pulse

0

C

DS(ON)

1

10

Drain - Source Voltage V

Fig11. ID - T

j

8

7

6

(A)

D

5

4

3

2

Drain Current I

1

0

25

50

Junction Temperature Tj ( )

75

100

C

150125

2010. 11. 23 5/7

KF7N60P/F

Revision No : 0

Fig12. Transient Thermal Response Curve

0

10

-1

10

Duty=0.5

0.2

0.1

0.05

-2

10

0.02

Transient Thermal Resistance

0.01

-5

10

0

10

10

S

ingle Pulse

-4

P

-3

10

-2

10

-1

10

TIME (sec)

Fig13. Transient Thermal Response Curve

(KF7N60P)

DM

- R

- Duty Factor, D= t1/t

t

1

= 1.15 C/W Max.

th(j-c)

0

10

t

2

(KF7N60F)

2

1

10

Duty=0.5

-1

10

0.2

0.1

0.05

0.02

-2

10

0.01

Transient Thermal Resistance

-5

10

10

Single Pul

-4

P

DM

- R

se

-3

10

-2

10

- Duty Factor, D= t1/t

-1

10

t

1

= 2.8 C/W Max.

th(j-c)

0

10

t

2

2

1

10

TIME (sec)

2010. 11. 23 6/7

KF7N60P/F

Revision No : 0

Fig14. Gate Charge

V

GS

Fast
Recovery
Diode

0.8 V

DSS

I

D

1.0 mA

V

GS

Fig15. Single Pulsed Avalanche Energy

50V

10 V

I

D

V

DS

BV

DSS

Q

gs

EAS= LI

Q

gd

1

2

AS

2

BV

BV

DSS

Q

- V

g

DSS

DD

Q

L

I

AS

25Ω

10 V

Fig16. Resistive Load Switching

0.5 V

DSS

25 Ω

10V

I

(t)

V

DS

V

GS

V

DD

D

VDS(t)

Time

t

p

V

DS

90%

R

L

10%

V

GS

t

V

DS

V

GS

t

d(on)

t

r

on

t

d(off)

t

f

t

off

2010. 11. 23 7/7

KF7N60P/F

Revision No : 0

Fig17. Source - Drain Diode Reverse Recovery and dv /dt

0.8 V

DSS

I

F

10V

DUT

driver

V

GS

V

DS

I

S

I

SD

(DUT)

V

(DUT)

DS

Body Diode Forword Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

SD

Body Diode Forword Voltage drop

di/dt

V

DD