Page 1
2011. 10 . 4 1/6
SEMICONDUCTOR
TECHNICAL DATA
KF7N50D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
Revision No : 0
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
·V
DSS(Min.)
= 500V, ID= 5.5A
·R
DS(ON)
=1.0 Ω(Max) @V
GS
=10V
·Qg(typ.) =16nC
MAXIMUM RATING (Tc=25℃)
* : Drain current limited by maximum junction temperature.
DPAK (1)
DIM
MILLIMETERS
A
A
B
B
C
C
D
D
F
FF
H
G
K
G
J
L
K
L
M
0.96 MAX
0.90 MAX
E
E
M
N
H
0.70 MIN
O
0.1 MAX
N
123
6.60 0.20+
_
6.10 0.20+
_
5.34 0.30+
_
0.70 0.20+
_
2.70 0.15
+
_
2.30 0.10
+
_
1.80 0.20+
_
0.50 0.10
+
_
2.30 0.10+
_
0.50 0.10
+
_
J
O
1. GATE
2. DRAIN
3. SOURCE
PIN CONNECTION
KF7N50I
KF7N50D
CHARACTERISTIC SYMBOL
RATING
UNIT
KF7N50D/I
Drain-Source Voltage
V
DSS
500 V
Gate-Source Voltage
V
GSS
±30
V
Drain Current
@T
C
=25℃
I
D
5.5
A
@T
C
=100℃
3.5
Pulsed (Note1)
I
DP
21
Single Pulsed Avalanche Energy
(Note 2)
E
AS
180
mJ
Repetitive Avalanche Energy
(Note 1)
E
AR
4
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt 4.5
V/ns
Drain Power
Dissipation
Tc=25℃
P
D
69.4 W
Derate above25℃
0.56
W/℃
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Characteristics
Thermal Resistance, Junction-to-Case
R
thJC
1.8
℃/W
Thermal Resistance, Junction-toAmbient
R
thJA
110
℃/W
M
N
G
123
A
C
FF
D
B
K
E
IPAK(1)
1. GATE
2. DRAIN
3. SOURCE
H
J
DIM
MILLIMETERS
_
A
B
C
P
D
E
F
G
H
L
J
K
L
M
N
P
+
6.6 0.2
_
6.1 0.2
+
_
5.34 0.3
+
_
0.7 0.2
+
_
9.3 0.3
+
_
2.3 0.2
+
_
0.76 0.1
+
_
2.3 0.1
+
_
0.5 0.1
+
_
1.8 0.2
+
_
0.5 0.1
+
_
1.0 0.1
+
0.96 MAX
_
1.02 0.3
+
G
D
S
Page 2
2011. 10 . 4 2/6
KF7N50D/I
Revision No : 0
ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250μA, V
GS
=0V
500 - - V
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
jID
=250μA, Referenced to 25℃
- 0.5 -
V/℃
Drain Cut-off Current
I
DSS
VDS=500V, VGS=0V,
- - 10
μA
Gate Threshold Voltage
V
th
VDS=VGS, I
D
=250μA
2.5 - 4.5 V
Gate Leakage Current
I
GSS
V
GS
=±30V, V
DS
=0V
- -
±100
nA
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=2.7A
- 0.83 1.0
Ω
Dynamic
Total Gate Charge
Q
g
VDS=400V, ID=7A
V
GS
=10V (Note4,5)
- 16 -
nCGate-Source Charge
Q
gs
- 3.5 -
Gate-Drain Charge
Q
gd
- 6.0 -
Turn-on Delay time
t
d(on)
VDD=200V, ID=7A
R
G
=25Ω (Note4,5)
V
GS
=10V
- 20 -
ns
Turn-on Rise time
t
r
- 25 -
Turn-off Delay time
t
d(off)
- 50 -
Turn-off Fall time
t
f
- 25 -
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1.0MHz
- 710 -
pFOutput Capacitance
C
oss
- 95 -
Reverse Transfer Capacitance
C
rss
- 8.5 -
Source-Drain Diode Ratings
Continuous Source Current
I
S
VGS<V
th
- - 7
A
Pulsed Source Current
I
SP
- - 28
Diode Forward Voltage
V
SD
IS=5.5A, VGS=0V
- - 1.4 V
Reverse Recovery Time
t
rr
IS=7A, VGS=0V,
dIs/dt=100A/
μs
- 310 - ns
Reverse Recovery Charge
Q
rr
- 2.7 -
μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 7.0mH, I
S
=7A, VDD=50V, R
G
= 25Ω, Starting Tj= 25℃.
Note 3) I
S
≤7A, dI/dt≤100A/㎲, VDD≤BV
DSS
, Starting T
j
= 25℃.
Note 4) Pulse Test : Pulse width
≤ 300㎲, Duty Cycle ≤ 2%.
Note 5) Essentially independent of operating temperature.
Marking
1
KF7N50
001
D
1
KF7N50
I
2
2
001
1
PRODUCT NAME
2
LOT NO
Page 3
2011. 10 . 4 3/6
KF7N50D/I
Revision No : 0
2
10
(A)
1
D
10
0
10
Drain Current I
-1
10
0.1 10
Drain - Source Voltage VDS (V)
Fig3. BV
DSS
1.2
VGS = 0V
= 250
I
DS
1.1
1.0
Fig1. ID - V
DS
VGS=10V
VGS=7V
VGS=5V
(A)
D
10
10
VDS=30V
1
0
Drain Current I
-1
1100
- T
DSS
j
10
(Ω)
DS(ON)
3.0
2.5
2.0
1.5
100
Fig2. ID - V
C
25
C
GS
684102
Gate - Source Voltage VGS (V)
Fig4. R
DS(ON)
- I
D
VGS=7V
0.9
0.8
Normalized Breakdown Voltage BV
-100 -50
050
Junction Temperature Tj ( )
(A)
S
Fig5. IS - V
2
10
1
10
100
C
0
10
SD
25
C
Reverse Drain Current I
-1
10
0.2 0.4 0.8 1.0 1.20.6 1.4 1.6 1.8
100
C
150
(A)
D
- T
VGS=10V
j
1.0
0.5
On - Resistance R
0.2
0126189315
Drain Current I
3.0
2.5
V
I
D
=10V
GS
= 3.5A
Fig6. R
DS(ON)
2.0
1.5
1.0
0.5
Normalized On Resistance
0.0
0 50-100 -50 100 150
Source - Drain Voltage V
SD
(V)
Junction Temperature Tj ( )
C
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2011. 10 . 4 4/6
KF7N50D/I
Revision No : 0
)
Fig 7. C - V
4
10
3
10
2
10
Capacitance (pF)
1
10
0
10
0 5 15 25 3510 20 30 40
DS
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area
2
10
Operation in this
area is limited by R
1
10
(A)
D
0
10
-1
10
Drain Current I
2
10
10
Tc= 25
Tj = 150
Single pulse
0
C
C
DS(ON)
1
10
10
Drain - Source Voltage V
Fig8. Qg- V
12
ID=7 A
10
(V)
C
iss
C
oss
GS
8
6
GS
V
DS
= 400V
4
C
rss
2
Gate - Source Voltage V
0
3
0
6
Gate - Charge
Qg (nC)
Fig10. ID - T
151218
j
21 249
6
10µs
100µs
1ms
10ms
DC
2
(V)
DS
10
3
5
(A)
4
D
3
2
Drain Current I
1
0
025
50
75
100
Junction Temperature Tj ( )
C
150125
Fig11. Transient Thermal Response Curve
1
10
0
10
Duty=0.5
0.2
1
.
0
-1
10
05
.
0
.02
0
Transient Thermal Resistance
0.01
Single Pulse
-2
10
-5
10
-4
10
-3
10
-2
10
TIME (sec
P
DM
- Duty Factor, D= t1/t
- R
thJC
-1
10
t
1
t
2
T
j(max)
=
0
10
2
- T
c
P
D
1
10
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2011. 10 . 4 5/6
KF7N50D/I
Revision No : 0
Fig12. Gate Charge
V
GS
Fast
Recovery
Diode
0.8 V
DSS
I
D
1.0 mA
V
GS
Fig13. Single Pulsed Avalanche Energy
50V
10 V
I
D
V
DS
BV
DSS
Q
gs
EAS= LI
Q
gd
1
2
AS
2
BV
BV
DSS
Q
- V
g
DSS
DD
Q
L
I
AS
25Ω
10 V
Fig14. Resistive Load Switching
0.5 V
DSS
25 Ω
10V
I
(t)
V
DS
V
GS
V
DD
D
VDS(t)
Time
t
p
V
DS
90%
R
L
10%
V
GS
t
V
DS
V
GS
t
d(on)
t
r
on
t
d(off)
t
f
t
off
Page 6
2011. 10 . 4 6/6
KF7N50D/I
Revision No : 0
Fig15. Source - Drain Diode Reverse Recovery and dv /dt
0.5 V
DSS
I
F
10V
DUT
driver
V
GS
V
DS
I
S
I
SD
(DUT)
V
(DUT)
DS
Body Diode Forword Current
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
Body Diode Forword Voltage drop
di/dt
V
DD
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