Datasheet kf70n06p_f Datasheet

2010. 7. 14 1/7

SEMICONDUCTOR

TECHNICAL DATA

KF70N06P/F

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 1

General Description

It’s mainly suitable for low viltage applications such as automotive,

DC/DC converters and a load switch in battery powered applications

FEATURES

·V

DSS

= 60V, ID= 70A (KF70N06P)

·

Drain-Source ON Resistance :

R

DS(ON)

=12mΩ(Max.) @V

GS

= 10V

MOSFET MAXIMUM RATING (Ta=25℃ Unless otherwise noted)

KF70N06P

KF70N06F

* : Drain current limited by maximum junction temperature.

CHARACTERISTIC

SYMBOL

RATING

UNIT

KF70N06P KF70N06F

Drain-Source Voltage

V

DSS

60 V

Gate-Source Voltage

V

GSS

±20

V

Drain Current

@T

C

=25℃

ID*

70 41

A

@T

C

=100℃

44 25

Pulsed (Note1)

I

DP

240 196

Single Pulsed Avalanche Energy
(Note 2)

E

AS

480

mJ

Repetitive Avalanche Energy
(Note 1)

E

AR

12

mJ

Peak Diode Recovery dv/dt
(Note 3)

dv/dt 4.5

V/ns

Drain Power
Dissipation

Tc=25℃

P

D

125 43 W

Derate above 25℃

1.0 0.34

W/℃

Maximum Junction Temperature

T

j

150

℃

Storage Temperature Range

T

stg

-55~150

℃

Thermal Characteristics

Thermal Resistance, Junction-to-Case

R

thJC

1.0 2.9

℃/W

Thermal Resistance,
Junction-to-Ambient

R

thJA

62.5

℃/W

PIN CONNECTION

E

I

K

D

E

K

L

D

Q

A

M

NN

123

A

M

NN

123

F

G

B

Q

L

J

1. GATE

2. DRAIN

3. SOURCE

TO-220AB

F

B

G

J

O

C

P

H

C

O

R

H

1. GATE

2. DRAIN

3. SOURCE

DIM MILLIMETERS

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

15.95 MAX

1.3+0.1/-0.05

0.5+0.1/-0.05

13.08 0.3

1.4 0.1

1.27 0.1

2.54 0.2

4.5 0.2

2.4 0.2

9.2 0.2

DIM

A

B

C

D

E

F

G

H

J

K

L

M

N

O

Q

R

_

9.9 0.2

+

_

+

0.8 0.1
_

3.6 0.2

+

_

+

2.8 0.1

3.7

1.5
_

+

1.46
_

+

_

+
_

+

_

+
_

+
_

+

MILLIMETERS

_

10.16 0.2

+
_

15.87 0.2

+

_

2.54 0.2

+

_

0.8 0.1

+

_

3.18 0.1

+

_

3.3 0.1

+

_

12.57 0.2

+

_

0.5 0.1

+

_

13.0 0.5

+

_

3.23 0.1

+

1.47 MAX

1.47 MAX

_

2.54 0.2

+
_

6.68 0.2

+
_

+

4.7 0.2

_

2.76 0.2

+

D

TO-220IS (1)

G

S

2010. 7. 14 2/7

KF70N06P/F

Revision No :1

Marking

ELECTRICAL CHARACTERISTICS (Tc=25℃)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage

BV

DSS

I

D

=250μA, V

GS

=0V

60 - - V

Breakdown Voltage Temperature Coefficient

ΔBV

DSS

/ΔT

jID

=250μA, Referenced to 25℃

- 0.08 -

V/℃

Drain Cut-off Current

I

DSS

VDS=60V, VGS=0V,

- - 10

μA

Gate Threshold Voltage

V

th

VDS=VGS, I

D

=250μA

2 - 4 V

Gate Leakage Current

I

GSS

V

GS

=±20V, V

DS

=0V

- -

±100

nA

Drain-Source ON Resistance

R

DS(ON)

VGS=10V, ID=35A

- 10.0 12.0

mΩ

Dynamic

Total Gate Charge

Q

g

VDS=48V, ID=70A

V

GS

=10V (Note4,5)

- 51 -

nCGate-Source Charge

Q

gs

- 11.3 -

Gate-Drain Charge

Q

gd

- 21.7 -

Turn-on Delay time

t

d(on)

VDD=30V

R

L

=0.43Ω

R

G

=25Ω (Note4,5)

- 38 -

ns

Turn-on Rise time

t

r

- 110 -

Turn-off Delay time

t

d(off)

- 90 -

Turn-off Fall time

t

f

- 72 -

Input Capacitance

C

iss

VDS=25V, VGS=0V, f=1.0MHz

- 2140 -

pF

Output Capacitance

C

oss

- 546 -

Reverse Transfer Capacitance

C

rss

- 96.8 -

Source-Drain Diode Ratings

Continuous Source Current

I

S

VGS<V

th

- - 70
A

Pulsed Source Current

I

SP

- - 280

Diode Forward Voltage

V

SD

IS=70A, VGS=0V

- - 1.5 V

Reverse Recovery Time

t

rr

IS=70A, VGS=0V,

dIs/dt=100A/μ

s

- 80 - ns

Reverse Recovery Charge

Q

rr

- 280 -

μC

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 2) L =47μ

H, IS=70A, VDD=50V, R

G

=25Ω, Starting Tj=25℃.

Note 3) I

S

≤7.0A, dI/dt≤200A/㎲, VDD≤BV

DSS

, Starting T

j

=25℃.

Note 4) Pulse Test : Pulse width ≤

300㎲, Duty Cycle ≤ 2%.

Note 5) Essentially independent of operating temperature.

1

KF70N06

701

P

1

KF70N06

2

F

713

2

1

PRODUCT NAME

2

LOT NO

2010. 7. 14 3/7

KF70N06P/F

Revision No :1

Fig1. ID - V

1000

(A)

D

100

10

Drain Current I

1

0.1 10

DSS

1.2

VGS = 0V
I

DS

1.1

1.0

0.9

0.8

Normalized Breakdown Voltage BV

-100 -50

VGS=10V

1100

Drain - Source Voltage VDS (V)

Fig3. BV

= 250

050

DSS

DS

- T

100

VGS=8V

VGS=6V

VGS=5V

j

150 175

(A)

D

1000

100

10

VDS = 15V

Fig2. ID - V

100

C

25

GS

C

Drain Current I

1

268

410

Gate - Source Voltage VGS (V)

(mΩ)

DS(ON)

Fig4. R

16

14

12

VGS=10V

10

8

6

DS(ON)

VGS=15V

- I

D

On - Resistance R

4

0503010 20 40 60 8070

Junction Temperature Tj ( )

(A)

S

100

10

Fig5. IS - V

100

C

SD

25

C

Reverse Drain Current I

1

0.4 0.8 1 1.20.6 1.4

Source - Drain Voltage V

SD

C

(V)

Drain Current I

Fig6. R

1.8

V

=10V

GS

1.6

1.4

1.2

1.0

0.8

Normalized On Resistance

0.6

= 35A

I

D

0 25 50 75 100 125-50 -25 150 175

Junction Temperature Tj ( )

DS(ON)

(A)

D

- T

j

C

2010. 7. 14 4/7

KF70N06P/F

Revision No :1

Fig 7. C - V

10000

C

iss

1000

100

Capacitance (pF)

10

0 5 15 25 3510 20 30 40

C

oss

C

rss

DS

Drain - Source Voltage VDS (V)

Fig 9. Safe Operation Area Fig 10. Safe Operation Area

100

(A)

D

10

1

DS(ON)

R

Limited

Fig 8. Q

10

(V)

8

GS

6

4

2

Gate - Source Voltage V

0

0

(KF70N06P) (KF70N06F)

100µs

1ms

10ms

DC

(A)

D

100

10

R

1

DS(

ON)

VDS=48V

Limited

20

Gate - Charge

g

- V

Qg (nC)

DS

40

100µs

1ms

10ms

DC

60

0.1

Drain Current I

0.01
1

Drain - Source Voltage V

Fig 11. ID - T

80

70

60

(A)

D

50

40

30

20

Drain Current I

10

0

025 75 125 17550 100 150

KF70N06F

Drain Current I

0.1

10

(V) Drain - Source Voltage V

DS

C

KF70N06P

1000.1

0.01
1

10

DS

(V)

1000.1

Case Temperature TC ( C)

2010. 7. 14 5/7

KF70N06P/F

Revision No :1

Fig 12. R

C

Transient Thermal Impedance [ / W]

10

10

-1

-2

10

Duty=0.5

0.2

0.1

0.05

0.02

0.01

-5

10

Single Pulse

-4

10

0

10

Square Wave Pulse Duration (sec)

Fig 13. R

of KF70N06P

th

P

DM

- Duty Factor, D= t1/t

- R

-3

-2

10

of KF70N06F

th

-1

10

thJC

t

1

t

2

2

T

- T

j(max)

=

c

P

D

0

10

1

10

10

10

10

0

-1

-2

10

Duty=0.5

0.2

0.1

0.05

0.02

0.01

-5

Single Pulse

-4

10

10

C

Transient Thermal Impedance [ / W]

Square Wave Pulse Duration (sec)

P

DM

- Duty Factor, D= t1/t

- R

-3

-2

10

-1

10

thJC

t

1

t

2

2

T

- T

j(max)

=

10

c

P

D

0

1

10

2010. 7. 14 6/7

KF70N06P/F

Revision No :1

Fig14. Gate Charge

V

GS

Fast
Recovery
Diode

0.8 V

DSS

I

D

1.0 mA

V

GS

Fig15. Single Pulsed Avalanche Energy

50V

10 V

I

D

V

DS

BV

DSS

Q

gs

EAS= LI

Q

gd

1

2

AS

2

BV

BV

DSS

Q

- V

g

DSS

DD

Q

L

I

AS

25Ω

10 V

Fig16. Resistive Load Switching

0.5 V

DSS

25 Ω

10V

I

(t)

V

DS

V

GS

V

DD

D

VDS(t)

Time

t

p

V

DS

90%

R

L

10%

V

GS

t

V

DS

V

GS

t

d(on)

t

r

on

t

d(off)

t

f

t

off

2010. 7. 14 7/7

KF70N06P/F

Revision No :1

Fig17. Source - Drain Diode Reverse Recovery and dv /dt

0.8 V

DSS

I

F

10V

DUT

driver

V

GS

V

DS

I

S

I

SD

(DUT)

V

(DUT)

DS

Body Diode Forword Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

SD

Body Diode Forword Voltage drop

di/dt

V

DD