Datasheet kf60n06p Datasheet

SEMICONDUCTOR

TECHNICAL DATA

KF60N06P

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 0

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for active power factor

correction , electronic lamp ballasts based on half bridge topology,

DC/DC Converters and switching mode power supplies.

FEATURES

V

DSS

= 60V, ID = 60A

Drain-Source ON Resistance :

R

DS(ON)

=13.2m (Max.) @VGS= 10V

Qg(typ.) = 48nC

MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted)

* : Drain current limited by maximum junction temperature.

CHARACTERISTIC

SYMBOL

RATING UNIT

Drain-Source Voltage

V

DSS

60 V

Gate-Source Voltage

V

GSS

±20

V

Drain Current

@T

C

=25℃

ID*

60

A

@T

C

=100℃

37

Pulsed (Note1)

I

DP

230

Single Pulsed Avalanche Energy
(Note 2)

E

AS

430

mJ

Repetitive Avalanche Energy
(Note 1)

E

AR

13.5

mJ

Peak Diode Recovery dv/dt
(Note 3)

dv/dt 4.5

V/ns

Drain Power
Dissipation

Tc=25℃

P

D

113 W

Derate above 25℃

0.90

W/℃

Maximum Junction Temperature

T

j

150

℃

Storage Temperature Range

T

stg

-55～150

℃

Thermal Characteristics

Thermal Resistance, Junction-to-Case

R

thJC

1.1

℃/W

Thermal Resistance,
Junction-to-Ambient

R

thJA

62.5

℃/W

PIN CONNECTION

E

I

K

D

A

M

NN

123

F

G

B

Q

L

J

1. GATE

2. DRAIN

3. SOURCE

TO-220AB

O

C

P

H

DIM MILLIMETERS

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

_

9.9 0.2

+

15.95 MAX

1.3+0.1/-0.05
_

+

0.8 0.1
_

3.6 0.2

+

_

+

2.8 0.1

3.7

0.5+0.1/-0.05

1.5
_

+

13.08 0.3

1.46
_

1.4 0.1

+

_

1.27 0.1

+
_

2.54 0.2

+

_

4.5 0.2

+
_

2.4 0.2

+
_

9.2 0.2

+

G

D

S

KF60N06P

Revision No : 0

Marking

ELECTRICAL CHARACTERISTICS (Tc=25℃)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage

BV

DSS

I

D

=250μA, V

GS

=0V

60 - - V

Breakdown Voltage Temperature Coefficient

ΔBV

DSS

/ΔT

jID

=250μA, Referenced to 25℃

- 0.08 -

V/℃

Drain Cut-off Current

I

DSS

VDS=60V, VGS=0V,

- - 10

μA

Gate Threshold Voltage

V

th

VDS=VGS, I

D

=250μA

2 - 4 V

Gate Leakage Current

I

GSS

V

GS

=±20V, V

DS

=0V

- -

±100

nA

Drain-Source ON Resistance

R

DS(ON)

VGS=10V, ID=30A

- 11.5 13.2

mΩ

Dynamic

Total Gate Charge

Q

g

VDS=48V, ID=60A

V

GS

=10V (Note4,5)

- 48 -

nCGate-Source Charge

Q

gs

- 9.2 -

Gate-Drain Charge

Q

gd

- 19 -

Turn-on Delay time

t

d(on)

VDD=30V

I

D

=60A

R

G

=25Ω (Note4,5)

- 35 -

ns

Turn-on Rise time

t

r

- 75 -

Turn-off Delay time

t

d(off)

- 100 -

Turn-off Fall time

t

f

- 75 -

Input Capacitance

C

iss

VDS=25V, VGS=0V, f=1.0MHz

- 1860 -

pF

Output Capacitance

C

oss

- 490 -

Reverse Transfer Capacitance

C

rss

- 92 -

Source-Drain Diode Ratings

Continuous Source Current

I

S

VGS<V

th

- - 60
A

Pulsed Source Current

I

SP

- - 240

Diode Forward Voltage

V

SD

IS=60A, VGS=0V

- - 1.4 V

Reverse Recovery Time

t

rr

IS=60A, VGS=0V,

dIs/dt=100A/μs

- 70 - ns

Reverse Recovery Charge

Q

rr

- 180 - nC

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 2) L =120μH, I

S

=60A, VDD=30V, R

G

=25Ω, Starting Tj=25℃.

Note 3) I

S

≤60A, dI/dt≤200A/㎲, VDD≤BV

DSS

, Starting T

j

=25℃.

Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%.

Note 5) Essentially independent of operating temperature.

1

KF60N06
P

2

901

1

PRODUCT NAME

2

LOT NO

KF60N06P

Revision No : 0

Fig1. ID - V

1000

(A)

D

100

10

Drain Current I

1

0.1 10

Drain - Source Voltage VDS (V)

Fig3. BV

DSS

1.2

VGS = 0V

= 250

I

DS

1.1

1.0

DS

1000

VDS = 20V

VGS=10V

(A)

D

VGS=7V

VGS=5V

100

10

Drain Current I

1

1100

- T

DSS

j

268

20

18

(mΩ)

16

DS(ON)

14

Fig2. ID - V

100

C

25

410

GS

C

Gate - Source Voltage VGS (V)

Fig4. R

VGS=7V

DS(ON)

- I

D

0.9

0.8

Normalized Breakdown Voltage BV

-50

050

100

Junction Temperature Tj ( )

(A)

S

200

100

10

100

C

Fig5. IS - V

SD

25

C

Reverse Drain Current I

1

0.4 0.8 1 1.20.6 1.4

12

10

VGS=10V

On - Resistance R

150

C

8

01006020 40 80 120

Drain Current I

Fig6. R

2.6

V

=10V

GS

= 30A

I

D

2.2

1.8

1.4

1.0

0.6

Normalized On Resistance

0.2
0 25 50 75 100 125-50 -25 150

DS(ON)

D

- T

(A)

j

Source - Drain Voltage V

SD

(V)

Junction Temperature Tj ( )

C

KF60N06P

Revision No : 0

Drain Current I

D

(A)

Gate - Charge

Qg (nC)

Fig 7. C - V

DS

Drain - Source Voltage V

DS

(V)

0

10

6

2

4

8

20

5030 40

10

0

Fig 8. Q

g

- V

DS

Fig 9. Safe Operation Area

Gate - Source Voltage V

GS

(V)

Drain - Source Voltage VDS (V)

10

100

1000

10000

05 15 25 3510 20 30 40

C

rss

VDS=48V

C

oss

C

iss

Fig 10. ID - T

C

Case Temperature TC ( C)

Drain Current I

D

(A)

0

20

40

70

60

10

30

50

025 75 125 17550 100 150

1

10

100

1000

0.1
1

10

1000.1

DC

R

DS(ON)

Limited

Capacitance (pF)

1ms

10ms

100µs

10µs

Pulse Time (S)

10

-5

10

-3

10

-2

10

-1

10

0

10

1

10

-4

0.01

0.1

1

10

Fig 11. R

th

(j-c)

R

th

[ / W]

C

- Duty Factor, D= t1/

T

j(max)

- T

c

- R

thJC

=

P

D

t

1

t

2

P

DM

Single Pulse

Duty=0.5

0.2

0.1

0.05

0.02

0.01

KF60N06P

Revision No : 0

Fig12. Gate Charge

V

GS

Fast
Recovery
Diode

0.8 V

DSS

I

D

1.0 mA

V

GS

Fig13. Single Pulsed Avalanche Energy

30V

10 V

I

D

V

DS

BV

DSS

Q

gs

EAS= LI

Q

gd

1

2

AS

2

BV

BV

DSS

Q

g

DSS

- V

DD

Q

L

I

AS

25Ω

10 V

Fig14. Resistive Load Switching

0.5 V

DSS

25 Ω

10V

I

(t)

V

DS

V

GS

V

DD

D

VDS(t)

Time

t

p

V

DS

90%

R

L

10%

V

GS

t

V

DS

V

GS

t

d(on)

t

r

on

t

d(off)

t

f

t

off

KF60N06P

Revision No : 0

Fig15. Source - Drain Diode Reverse Recovery and dv /dt

0.5 V

DSS

I

F

10V

DUT

driver

V

GS

V

DS

I

S

I

SD

(DUT)

V

(DUT)

DS

Body Diode Forword Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

SD

Body Diode Forword Voltage drop

di/dt

V

DD