Datasheet kf5n65d-i Datasheet

2011. 10. 27 1/6

SEMICONDUCTOR

TECHNICAL DATA

KF5N65D/I

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 0

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, fast reverse recovery time, low on resistance, low gate

charge and excellent avalanche characteristics. It is mainly suitable for

electronic ballast and switching mode power supplies.

FEATURES

·V

DSS

= 650V, ID= 4.4A

·Drain-Source ON Resistance : R

DS(ON)

=1.75Ω(Max) @V

GS

= 10V

·Qg(typ) = 14.5nC

MAXIMUM RATING (Tc=25℃)

CHARACTERISTIC SYMBOL RATING UNIT

Drain-Source Voltage

V

DSS

650 V

Gate-Source Voltage

V

GSS

±30

V

Drain Current

@T

C

=25℃

I

D

4.4

A

@T

C

=100℃

2.7

Pulsed (Note1)

I

DP

15

Single Pulsed Avalanche Energy
(Note 2)

E

AS

150

mJ

Repetitive Avalanche Energy
(Note 1)

E

AR

3.8

mJ

Peak Diode Recovery dv/dt
(Note 3)

dv/dt 4.5

V/ns

Drain Power
Dissipation

Tc=25℃

P

D

69.4 W

Derate above 25℃

0.56

W/℃

Maximum Junction Temperature

T

j

150

℃

Storage Temperature Range

T

stg

-55～150

℃

Thermal Characteristics

Thermal Resistance, Junction-to-Case

R

thJC

1.8

℃/W

Thermal Resistance, Junction-to­Ambient

R

thJA

110

℃/W

G

D

S

PIN CONNECTION

KF5N65D

KF5N65I

A

C

H

G

FF

123

D

B

J

E

K

DIM

L

N

M

MILLIMETERS

A

6.60 0.20+

6.10 0.20+

B

5.34 0.30+

C

D

0.70 0.20+

E

2.70 0.15

2.30 0.10

F

0.96 MAX

G

0.90 MAX

H

1.80 0.20+

J

2.30 0.10+

K

0.50 0.10

L

M

0.50 0.10

0.70 MIN

N

0.1 MAX

O

_

_

_

_

_

+
_

+

_

_

_

+
_

+

M

N

G

FF

123

O

DPAK (1)

A

C

D

B

K

E

H

J

DIM

MILLIMETERS

_

A

B

C

P

D

E

F

G

H

L

J

K

L

M

N

P

+

6.6 0.2

_

6.1 0.2

+

_

5.34 0.3

+

_

0.7 0.2

+
_

9.3 0.3

+
_

2.3 0.2

+

_

0.76 0.1

+

_

2.3 0.1

+
_

0.5 0.1

+
_

1.8 0.2

+
_

0.5 0.1

+
_

1.0 0.1

+

0.96 MAX

_

1.02 0.3

+

IPAK(1)

2011. 10. 27 2/6

KF5N65D/I

Revision No : 0

ELECTRICAL CHARACTERISTICS (Tc=25℃)

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 2) L=12.4mH, I

S

=5.0A, VDD=50V, R

G

=25Ω, Starting Tj=25℃.

Note 3) I

S

≤5A, dI/dt≤100A/㎲, VDD≤BV

DSS

, Starting T

j

=25℃.

Note 4) Pulse Test : Pulse width

≤300㎲, Duty Cycle≤2%.

Note 5) Essentially independent of operating temperature.

Marking

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage

BV

DSS

I

D

=250㎂ , V

GS

=0V

650 - - V

Breakdown Voltage Temperature Coefficient

ΔBV

DSS

/ΔT

jID

=250㎂, Referenced to 25℃

- 0.7 -

V/℃

Drain Cut-off Current

I

DSS

VDS=650V, VGS=0V,

- - 10

㎂

Gate Threshold Voltage

V

th

VDS=VGS, I

D

=250㎂

2.5 - 4.5 V

Gate Leakage Current

I

GSS

V

GS

=±30V, V

DS

=0V

- -

±100

nA

Drain-Source ON Resistance

R

DS(ON)

VGS=10V, ID=2.2A

- 1.5 1.75

Ω

Dynamic

Total Gate Charge

Q

g

VDS=520V, ID=5A

V

GS

=10V (Note4,5)

- 14.5 -

nCGate-Source Charge

Q

gs

- 3.0 -

Gate-Drain Charge

Q

gd

- 5.8 -

Turn-on Delay time

t

d(on)

VDD=325V

I

D

=5A

R

G

=25Ω (Note4,5)

- 35 -

ns

Turn-on Rise time

t

r

- 35 -

Turn-off Delay time

t

d(off)

- 65 -

Turn-off Fall time

t

f

- 25 -

Input Capacitance

C

iss

VDS=25V, VGS=0V, f=1.0MHz

- 720 -

pF

Output Capacitance

C

oss

- 72 -

Reverse Transfer Capacitance

C

rss

- 7.2 -

Source-Drain Diode Ratings

Continuous Source Current

I

S

VGS<V

th

- - 5.5
A

Pulsed Source Current

I

SP

- - 22

Diode Forward Voltage

V

SD

IS=4.4A, VGS=0V

- - 1.4 V

Reverse Recovery Time

t

rr

IS=5.0A, VGS=0V,

dIs/dt=100A/

㎲

- 300 - ns

Reverse Recovery Charge

Q

rr

- 1.8 -

μC

1

KF5N65

001

D

1

2 2

KF5N65
I

001

1

PRODUCT NAME

2

LOT NO

2011. 10. 27 3/6

KF5N65D/I

Revision No : 0

Fig1. ID - V

100

(A)

D

10

1

Drain Current I

0.1

0.1 10

DSS

1.2

VGS = 0V

= 250

I

DS

1.1

1.0

0.9

0.8

Normalized Breakdown Voltage BV

-100 -50

1100

Drain - Source Voltage VDS (V)

Fig3. BV

DSS

050

Junction Temperature Tj ( )

DS

VGS=10V, 7V

VGS=5V

- T

j

100

C

150

Fig2. ID - V

VDS=25V

1

10

(A)

D

100

C

25

0

10

Drain Current I

-1

10

Gate - Source Voltage VGS (V)

6.0

5.0

(Ω)

4.0

DS(ON)

3.0

2.0

1.0

On - Resistance R

0

042318567

C

684102

Fig4. R

DS(ON)

Drain Current I

D

GS

- I

D

VGS=7V

VGS=10V

(A)

Fig5. IS - V

1

(A)

10

S

150

0

10

Reverse Drain Current I

-1

10

0.2 0.4 0.8 1.0 1.20.6 1.4

Source - Drain Voltage V

C

SD

3.0

=10V

V

GS

= 2.2A

I

DS

2.5

2.0

25

C

(V)

SD

1.5

1.0

0.5

Normalized On Resistance

0.0

Fig6. R

0 50-100 -50 100 150

Junction Temperature Tj ( )

DS(ON)

- T

j

C

2011. 10. 27 4/6

KF5N65D/I

Revision No : 0

)

Fig 7. C - V

4

10

3

10

2

10

Capacitance (pF)

1

10

0

10

0 5 15 25 3510 20 30 40

DS

Drain - Source Voltage VDS (V)

Fig9. Safe Operation Area

2

10

Operation in this
area is limited by R

1

10

(A)

D

0

10

-1

10

Drain Current I

2

10

10

Tc= 25
Tj = 150
Single pulse

0

C

C

DS(ON)

1

10

10

Drain - Source Voltage V

Fig8. Qg- V

12

ID=5A

10

(V)

C

iss

C

oss

GS

8

6

GS

V

= 520V

DS

4

C

rss

2

Gate - Source Voltage V

0

3

0

6

Gate - Charge

Qg (nC)

Fig10. ID - T

151218

j

21 249

6

(A)

D

5

4

3

10µs

100µs

1ms

10ms

2

DC

2

(V)

DS

3

10

Drain Current I

1

0

025

50

75

100

Junction Temperature Tj ( )

C

150125

Fig11. Transient Thermal Response Curve

1

10

0

10

Duty=0.5

0.2

0.1

-1

10

0.05

0.02

01

.

Transient Thermal Resistance

0

Single Pulse

-2

10

-5

10

-4

10

-3

10

-2

10

TIME (sec

P

DM

- Duty Factor, D= t1/t

- R

thJC

-1

10

t

1

t

2

T

j(max)

=

0

10

2

- T

c

P

D

1

10

2011. 10. 27 5/6

KF5N65D/I

Revision No : 0

2011. 10. 27 6/6

KF5N65D/I

Revision No : 0

Fig15. Source - Drain Diode Reverse Recovery and dv /dt

0.5 V

DSS

I

F

10V

DUT

driver

V

GS

V

DS

I

S

I

SD

(DUT)

V

(DUT)

DS

Body Diode Forword Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

SD

Body Diode Forword Voltage drop

di/dt

V

DD