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SEMICONDUCTOR
TECHNICAL DATA
KF5N53F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
Revision No : 0
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
FEATURES
·V
DSS
= 525V, ID= 5.0A
·
Drain-Source ON Resistance : R
DS(ON)
=1.5Ω @V
GS
= 10V
·
Qg(typ) = 12nC
MAXIMUM RATING (Tc=25℃)
* : Drain current limited by maximum junction temperature.
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DSS
525 V
Gate-Source Voltage
V
GSS
±30
V
Drain Current
@T
C
=25℃
I
D
5.0*
A
@T
C
=100℃
2.9*
Pulsed (Note1)
I
DP
13*
Single Pulsed Avalanche Energy
(Note 2)
E
AS
200
mJ
Repetitive Avalanche Energy
(Note 1)
E
AR
4.3
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt 4.5
V/ns
Drain Power
Dissipation
Tc=25℃
P
D
37.9 W
Derate above 25℃
0.30
W/℃
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Characteristics
Thermal Resistance, Junction-to-Case
R
thJC
3.3
℃/W
Thermal Resistance, Junction-toAmbient
R
thJA
62.5
℃/W
PIN CONNECTION
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KF5N53F
Revision No : 0
ELECTRICAL CHARACTERISTICS (Tc=25℃)
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=14.5mH, I
AS
=5A, VDD=50V, R
G
=25Ω, Starting Tj=25℃.
Note 3) I
S
≤5A, dI/dt≤100A/㎲, VDD≤BV
DSS
, Starting T
j
=25℃.
Note 4) Pulse Test : Pulse width ≤
300㎲, Duty Cycle≤2%.
Note 5) Essentially independent of operating temperature.
Marking
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250㎂ , V
GS
=0V
525 - - V
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
jID
=250㎂, Referenced to 25℃
- 0.57 -
V/℃
Drain Cut-off Current
I
DSS
VDS=525V, VGS=0V,
- - 10
㎂
Gate Threshold Voltage
V
th
VDS=VGS, I
D
=250㎂
2.5 - 4.5 V
Gate Leakage Current
I
GSS
V
GS
=±30V, V
DS
=0V
- -
±10
㎂
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=2.5A
- 1.35 1.5
Ω
Dynamic
Total Gate Charge
Q
g
VDS=400V, ID=5A
V
GS
=10V (Note4,5)
- 12 -
nCGate-Source Charge
Q
gs
- 2.4 -
Gate-Drain Charge
Q
gd
- 5.4 -
Turn-on Delay time
t
d(on)
VDD=250V
R
L
=50Ω
R
G
=25Ω (Note4,5)
- 30 -
ns
Turn-on Rise time
t
r
- 30 -
Turn-off Delay time
t
d(off)
- 60 -
Turn-off Fall time
t
f
- 25 -
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1.0MHz
- 500 -
pF
Output Capacitance
C
oss
- 65 -
Reverse Transfer Capacitance
C
rss
- 5.8 -
Source-Drain Diode Ratings
Continuous Source Current
I
S
VGS<V
th
- - 5
A
Pulsed Source Current
I
SP
- - 20
Diode Forward Voltage
V
SD
IS=5A, VGS=0V
- - 1.4 V
Reverse Recovery Time
t
rr
IS=5A, VGS=0V,
dIs/dt=100A/㎲
- 300 - ns
Reverse Recovery Charge
Q
rr
- 2.0 -
μC
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