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2011. 5. 23 1/6
SEMICONDUCTOR
TECHNICAL DATA
KF5N50DS
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
Revision No : 0
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
FEATURES
·V
DSS
= 500V, ID= 4.3A
·Drain-Source ON Resistance : R
DS(ON)
=1.4Ω(Max) @V
GS
= 10V
·Qg(typ) = 12nC
·t
rr
(typ) = 150nS
MAXIMUM RATING (Tc=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DSS
500 V
Gate-Source Voltage
V
GSS
±30
V
Drain Current
@T
C
=25℃
I
D
4.3
A
@T
C
=100℃
2.7
Pulsed (Note1)
I
DP
13
Single Pulsed Avalanche Energy
(Note 2)
E
AS
270
mJ
Repetitive Avalanche Energy
(Note 1)
E
AR
8.6
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt 20
V/ns
Drain Power
Dissipation
Tc=25℃
P
D
59.5 W
Derate above 25℃
0.48
W/℃
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Characteristics
Thermal Resistance, Junction-to-Case
R
thJC
2.1
℃/W
Thermal Resistance, Junction-toAmbient
R
thJA
110
℃/W
G
D
S
PIN CONNECTION
A
C
H
G
FF
123
D
B
J
E
K
DIM
L
N
M
MILLIMETERS
A
6.60 0.20+
6.10 0.20+
B
5.34 0.30+
C
D
0.70 0.20
E
2.70 0.15
2.30 0.10
F
0.96 MAX
G
0.90 MAX
H
1.80 0.20+
J
2.30 0.10+
K
0.50 0.10
L
M
0.50 0.10
0.70 MIN
N
Max 0.1
O
_
_
_
_
+
_
+
_
+
_
_
_
+
_
+
O
DPAK (1)
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2011. 5. 23 2/6
KF5N50DS
Revision No : 0
ELECTRICAL CHARACTERISTICS (Tc=25℃)
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=19.5mH, I
S
=5A, VDD=50V, R
G
=25Ω, Starting Tj=25℃.
Note 3) I
S
≤5A, dI/dt≤100A/㎲, VDD≤BV
DSS
, Starting T
j
=25℃.
Note 4) Pulse Test : Pulse width
≤300㎲, Duty Cycle≤2%.
Note 5) Essentially independent of operating temperature.
Marking
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250㎂ , V
GS
=0V
500 - - V
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
jID
=250㎂, Referenced to 25℃
- 0.55 -
V/℃
Drain Cut-off Current
I
DSS
VDS=500V, VGS=0V,
- - 10
㎂
Gate Threshold Voltage
V
th
VDS=VGS, I
D
=250㎂
2.5 - 4.5 V
Gate Leakage Current
I
GSS
V
GS
=±25V, V
DS
=0V
- -
±10
㎂
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=2.15A
- 1.10 1.4
Ω
Dynamic
Total Gate Charge
Q
g
VDS=400V, ID=5A
V
GS
=10V (Note4,5)
- 12 -
nCGate-Source Charge
Q
gs
- 2.4 -
Gate-Drain Charge
Q
gd
- 5.4 -
Turn-on Delay time
t
d(on)
VDD=250V
I
D
=5A
R
G
=25Ω (Note4,5)
- 22.5 -
ns
Turn-on Rise time
t
r
- 29 -
Turn-off Delay time
t
d(off)
- 58 -
Turn-off Fall time
t
f
- 18 -
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1.0MHz
- 430 -
pF
Output Capacitance
C
oss
- 71 -
Reverse Transfer Capacitance
C
rss
- 7.5 -
Source-Drain Diode Ratings
Continuous Source Current
I
S
VGS<V
th
- - 5
A
Pulsed Source Current
I
SP
- - 20
Diode Forward Voltage
V
SD
IS=4.3A, VGS=0V
- - 1.4 V
Reverse Recovery Time
t
rr
IS=5A, VGS=0V,
dIs/dt=100A/
㎲
- 150 - ns
Reverse Recovery Charge
Q
rr
- 0.42 -
μC
1
KF5N50
001
DS
2
1
PRODUCT NAME
2
LOT NO
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2011. 5. 23 3/6
KF5N50DS
Revision No : 0
Fig1. ID - V
2
10
(A)
1
D
10
0
10
Drain Current I
-1
10
-1
10
DSS
1.2
VGS = 0V
= 250
I
DS
1.1
1.0
0.9
0.8
Normalized Breakdown Voltage BV
-100 -50
0
10
Drain - Source Voltage VDS (V)
Fig3. BV
DSS
050
Junction Temperature Tj ( )
- T
DS
10
VGS=10V
1
j
C
VGS=7V
VGS=5V
100
10
150
(A)
D
10
10
VDS=30V
1
0
TC=100
Fig2. ID - V
C
25
GS
C
Drain Current I
-1
2
10
684102
Gate - Source Voltage VGS (V)
Fig4. R
3.0
2.5
(Ω)
2.0
DS(ON)
1.5
1.0
0.5
On - Resistance R
0
084126210
VGS=6V
Drain Current I
DS(ON)
- I
D
VGS=10V
(A)
D
Fig5. IS - V
2
10
(A)
S
1
10
TC=100
C
0
10
Reverse Drain Current I
-1
10
0.2 0.4 0.8 1.0 1.20.6 1.4 1.6 1.8
Source - Drain Voltage V
SD
3.0
V
GS
= 2.5A
I
DS
2.5
2.0
1.5
25
C
1.0
0.5
Normalized On Resistance
0.0
(V)
SD
Fig6. R
=10V
0 50-100 -50 100 150
Junction Temperature Tj ( )
DS(ON)
- T
j
C
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2011. 5. 23 4/6
KF5N50DS
Revision No : 0
)
3
10
2
10
1
10
Capacitance (pF)
0
10
Fig 7. C - V
DS
0 5 15 25 3510 20 30 40
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area
2
10
Operation in this
area is limited by R
1
10
(A)
D
0
10
-1
10
Drain Current I
-2
10
10
Tc= 25
Tj = 150
Single pulse
0
C
DS(ON)
C
1
10
Drain - Source Voltage V
10
Fig8. Qg- V
12
ID=5A
C
iss
C
oss
(V)
GS
10
8
6
GS
V
= 400V
DS
V
= 250V
DS
V
= 100V
DS
4
C
rss
2
Gate - Source Voltage V
0
2
0
4
Gate - Charge
Qg (nC)
Fig10. ID - T
10812
j
14 166
6
5
10µs
100µs
1ms
10ms
100ms
DC
2
(V)
DS
3
10
(A)
4
D
3
2
Drain Current I
1
0
025
50
75
100
Junction Temperature Tj ( )
C
150125
Fig11. Transient Thermal Response Curve
Duty
=0.5
0
10
0.2
0.1
5
0.0
P
0.02
-1
10
0.01
Transient Thermal Resistance
Single Pulse
-2
10
-5
10
-4
10
-3
10
-2
10
TIME (sec
DM
- Duty Factor, D= t1/t
- R
-1
10
thJC
t
1
t
2
T
j(max)
=
0
10
2
- T
c
P
D
1
10
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2011. 5. 23 5/6
KF5N50DS
Revision No : 0
Fig12. Gate Charge
V
GS
Fast
Recovery
Diode
0.8 V
DSS
I
D
1.0 mA
V
GS
Fig13. Single Pulsed Avalanche Energy
50V
10 V
I
D
V
DS
BV
DSS
Q
gs
EAS= LI
Q
gd
1
2
AS
2
BV
BV
DSS
Q
DSS
- V
g
DD
Q
L
I
AS
25Ω
10 V
Fig14. Resistive Load Switching
0.5 V
DSS
25 Ω
10V
I
(t)
V
DS
V
GS
V
DD
D
VDS(t)
Time
t
p
V
DS
90%
R
L
10%
V
GS
t
t
r
V
DS
V
GS
d(on)
t
on
t
d(off)
t
f
t
off
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2011. 5. 23 6/6
KF5N50DS
Revision No : 0
Fig15. Source - Drain Diode Reverse Recovery and dv /dt
0.5 V
DSS
I
F
10V
DUT
driver
V
GS
V
DS
I
S
I
SD
(DUT)
V
(DUT)
DS
Body Diode Forword Current
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
Body Diode Forword Voltage drop
di/dt
V
DD
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