Page 1
2009. 5. 6 1/6
SEMICONDUCTOR
TECHNICAL DATA
KF50N06P
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
Revision No : 0
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction , electronic lamp ballasts based on half bridge topology and
switching mode power supplies.
FEATURES
V
DSS
= 60V, ID = 50A
Drain-Source ON Resistance :
R
DS(ON)
=17m (Max.) @VGS= 10V
Qg(typ.) = 39.5nC
MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted)
* : Drain current limited by maximum junction temperature.
CHARACTERISTIC
SYMBOL
RATING UNIT
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage
V
GSS
±20
V
Drain Current
@TC=25℃
ID*
50
A
@TC=100℃
32
Pulsed (Note1)
I
DP
170
Single Pulsed Avalanche Energy
(Note 2)
E
AS
330
mJ
Repetitive Avalanche Energy
(Note 1)
E
AR
9
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt 4.5
V/ns
Drain Power
Dissipation
Tc=25℃
P
D
96 W
Derate above 25℃
0.77
W/℃
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Characteristics
Thermal Resistance, Junction-to-Case
R
thJC
1.3
℃/W
Thermal Resistance,
Junction-to-Ambient
R
thJA
62.5
℃/W
PIN CONNECTION
A
F
E
I
K
M
D
NN
123
L
G
B
Q
J
1. GATE
2. DRAIN
3. SOURCE
O
C
DIM MILLIMETERS
P
H
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
_
9.9 0.2
+
15.95 MAX
1.3+0.1/-0.05
_
+
0.8 0.1
_
3.6 0.2
+
_
+
2.8 0.1
3.7
0.5+0.1/-0.05
1.5
_
+
13.08 0.3
1.46
_
1.4 0.1
+
_
1.27 0.1
+
_
2.54 0.2
+
_
4.5 0.2
+
_
2.4 0.2
+
_
9.2 0.2
+
TO-220AB
G
D
S
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2009. 5. 6 2/6
KF50N06P
Revision No : 0
Marking
ELECTRICAL CHARACTERISTICS (Tc=25
℃
)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
ID=250μA, VGS=0V
60 - - V
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔTjID=250μA, Referenced to 25℃
- 0.08 -
V/℃
Drain Cut-off Current
I
DSS
VDS=60V, VGS=0V,
- - 10
μA
Gate Threshold Voltage
V
th
VDS=VGS, ID=250μA
2 - 4 V
Gate Leakage Current
I
GSS
VGS=±20V, VDS=0V
- -
±100
nA
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=25A
- 14.2 17.0
mΩ
Dynamic
Total Gate Charge
Q
g
VDS=48V, ID=50A
V
GS
=10V (Note4,5)
- 39.5 nCGate-Source Charge
Q
gs
- 8 -
Gate-Drain Charge
Q
gd
- 16 -
Turn-on Delay time
t
d(on)
VDD=30V
I
D
=50A
R
G
=25Ω (Note4,5)
- 30 -
ns
Turn-on Rise time
t
r
- 100 -
Turn-off Delay time
t
d(off)
- 80 -
Turn-off Fall time
t
f
- 64 -
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1.0MHz
- 1560 -
pF
Output Capacitance
C
oss
- 405 -
Reverse Transfer Capacitance
C
rss
- 76 -
Source-Drain Diode Ratings
Continuous Source Current
I
S
VGS<V
th
- - 50
A
Pulsed Source Current
I
SP
- - 200
Diode Forward Voltage
V
SD
IS=50A, VGS=0V
- - 1.4 V
Reverse Recovery Time
t
rr
IS=50A, VGS=0V,
dIs/dt=100A/
μs
- 72 - ns
Reverse Recovery Charge
Q
rr
- 185 - nC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =132
μH, IS=50A, VDD=30V, RG=25Ω, Starting Tj=25℃.
Note 3) I
S
≤50A, dI/dt≤200A/㎲, VDD≤BV
DSS
, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width
≤ 300㎲, Duty Cycle ≤ 2%.
Note 5) Essentially independent of operating temperature.
1
KF50N06
901
P
2
1
PRODUCT NAME
2
LOT NO
Page 3
2009. 5. 6 3/6
KF50N06P
Revision No : 0
Fig1. ID - V
1000
(A)
D
100
10
Drain Current I
1
0.1 10
DSS
1.2
VGS = 0V
= 250
I
DS
1.1
1.0
0.9
0.8
Normalized Breakdown Voltage BV
-50
1100
Drain - Source Voltage VDS (V)
Fig3. BV
050
DSS
DS
- T
j
100
VGS=10V
VGS=7V
VGS=5V
150
(A)
D
1000
100
10
VDS = 20V
100
C
Fig2. ID - V
25
GS
C
Drain Current I
1
268
410
Gate - Source Voltage VGS (V)
(mΩ)
DS(ON)
Fig4. R
28
25
22
19
16
13
VGS=7V
DS(ON)
- I
D
VGS=10V
On - Resistance R
10
0503010 20 40 60 8070
Junction Temperature Tj ( )
(A)
S
100
10
Fig5. IS - V
100
C
SD
25
C
Reverse Drain Current I
1
0.4 0.8 1 1.20.6 1.4
Source - Drain Voltage V
SD
C
(V)
Drain Current I
Fig6. R
2.6
V
=10V
GS
= 25A
I
D
2.2
1.8
1.4
1.0
0.6
Normalized On Resistance
0.2
0 25 50 75 100 125-50 -25 150
Junction Temperature Tj ( )
DS(ON)
(A)
D
- T
j
C
Page 4
2009. 5. 6 4/6
KF50N06P
Revision No : 0
Fig 7. C - V
DS
10000
C
iss
1000
C
oss
100
Capacitance (pF)
C
rss
10
05 15 25 3510 20 30 40
Drain - Source Voltage VDS (V)
Fig 9. Safe Operation Area
1000
100
(A)
D
10
1
Drain Current I
DS(ON)
R
Limited
(KF50N06P)
10µs
100µs
1ms
10ms
100ms
Fig 8. Q
g
- V
DS
10
(V)
8
GS
6
VDS=48V
4
2
Gate - Source Voltage V
0
0
10
Gate - Charge
20
Qg (nC)
Fig 10. ID - T
C
4030
60
50
(A)
40
D
30
DC
20
Drain Current I
10
0.1
1
Drain - Source Voltage V
10
(V)
DS
10
C
Duty=0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
S
ingle Pulse
0.01
Transient Thermal Impedance [ / W]
-5
10
-4
10
0
1000.1
Fig 11. R
of KF50N06P
th
025 75 125 17550 100 150
P
DM
- Duty Factor, D= t1/t
- R
-3
10
10
-2
-1
10
Square Wave Pulse Duration (sec)
Case Temperature TC ( C)
t
1
t
2
2
T
- T
j(max)
10
c
P
D
0
thJC
=
1
10
Page 5
2009. 5. 6 5/6
KF50N06P
Revision No : 0
Fig12. Gate Charge
V
GS
Fast
Recovery
Diode
0.8 V
DSS
I
D
1.0 mA
V
GS
Fig13. Single Pulsed Avalanche Energy
50V
10 V
I
D
V
DS
BV
DSS
Q
gs
EAS= LI
Q
gd
1
2
AS
2
BV
BV
DSS
Q
DSS
- V
g
DD
Q
L
I
AS
25Ω
10 V
Fig14. Resistive Load Switching
0.5 V
DSS
25 Ω
10V
I
(t)
V
DS
V
GS
V
DD
D
VDS(t)
Time
t
p
V
DS
90%
R
L
10%
V
GS
t
V
DS
V
GS
t
d(on)
t
r
on
t
d(off)
t
f
t
off
Page 6
2009. 5. 6 6/6
KF50N06P
Revision No : 0
Fig15. Source - Drain Diode Reverse Recovery and dv /dt
0.5 V
DSS
I
F
10V
DUT
driver
V
GS
V
DS
I
S
I
SD
(DUT)
V
(DUT)
DS
Body Diode Forword Current
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
Body Diode Forword Voltage drop
di/dt
V
DD
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