Datasheet kf4n65p_f Datasheet

2011. 6. 21 1/7

SEMICONDUCTOR

TECHNICAL DATA

KF4N65P/F

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 0

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for active power factor

correction and switching mode power supplies.

FEATURES

·V

DSS

=650V, ID=3.6A

·

Drain-Source ON Resistance :

R

DS(ON)

(Max)=2.5Ω @V

GS

=10V

·

Qg(typ.)= 12nC

MAXIMUM RATING (Tc=25℃)

* : Drain current limited by maximum junction temperature.

CHARACTERISTIC

SYMBOL

RATING

UNIT

KF4N65P KF4N65F

Drain-Source Voltage

V

DSS

650 V

Gate-Source Voltage

V

GSS

±30

V

Drain Current

@T

C

=25℃

I

D

3.6 3.6*

A

@T

C

=100℃

2.3 2.3*

Pulsed (Note1)

I

DP

8.4 8.4*

Single Pulsed Avalanche Energy (Note 2)

E

AS

103

mJ

Repetitive Avalanche Energy (Note 1)

E

AR

3.1

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt 4.5

V/ns

Drain Power Dissipation

Tc=25℃

P

D

83.3 37.9 W

Derate above 25℃

0.67 0.30

W/℃

Maximum Junction Temperature

T

j

150

℃

Storage Temperature Range

T

stg

-55～150

℃

Thermal Characteristics

Thermal Resistance, Junction-to-Case

R

thJC

1.5 3.3

℃/W

Thermal Resistance, Junction-to-Ambient

R

thJA

62.5 62.5

℃/W

PIN CONNECTION

KF4N65P

KF4N65F

A

E

I

K

M

D

NN

123

F

G

Q

L

TO-220AB

A

E

K

L

D

NN

123

Q

* Single Gauge Lead Frame

F

G

M

B

J

1. GATE

2. DRAIN

3. SOURCE

O

B

J

H

1. GATE

2. DRAIN

3. SOURCE

O

C

DIM MILLIMETERS

P

H

C

R

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

DIM

A

B

C

D

E

F

G

H

J

K

L

M

N

O

Q

R

_

9.9 0.2

+

15.95 MAX

1.3+0.1/-0.05 _

+

0.8 0.1 _

3.6 0.2

+

_

+

2.8 0.1

3.7

0.5+0.1/-0.05

1.5 _

+

13.08 0.3

1.46 _

1.4 0.1

+

_

1.27 0.1

+ _

2.54 0.2

+

_

4.5 0.2

+ _

2.4 0.2

+ _

9.2 0.2

+

MILLIMETERS

_

10.16 0.2

+ _

15.87 0.2

+

_

2.54 0.2

+

_

0.8 0.1

+

_

3.18 0.1

+

_

3.3 0.1

+

_

12.57 0.2

+

_

0.5 0.1

+

_

13.0 0.5

+

_

3.23 0.1

+

1.47 MAX

_

2.54 0.2

+ _

6.68 0.2

+ _

+

4.7 0.2

_

2.76 0.2

+

TO-220IS (1)

G

D

S

2011. 6. 21 2/7

KF4N65P/F

Revision No : 0

ELECTRICAL CHARACTERISTICS (Tc=25℃)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage

BV

DSS

I

D

=250μA, V

GS

=0V

650 - - V

Breakdown Voltage Temperature Coefficient

ΔBV

DSS

/ΔT

jID

=250μA, Referenced to 25℃

- 0.65 -

V/℃

Drain Cut-off Current

I

DSS

VDS=650V, VGS=0V,

- - 10

μA

Gate Threshold Voltage

V

th

VDS=VGS, I

D

=250μA

2.5 - 4.5 V

Gate Leakage Current

I

GSS

V

GS

=±30V, V

DS

=0V

- -

±100

nA

Drain-Source ON Resistance

R

DS(ON)

VGS=10V, ID=1.8A

- 2.1 2.5

Ω

Dynamic

Total Gate Charge

Q

g

VDS=520V, ID=3.6A

V

GS

=10V (Note4,5)

- 12 -

nCGate-Source Charge

Q

gs

- 2.5 -

Gate-Drain Charge

Q

gd

- 5.0 -

Turn-on Delay time

t

d(on)

VDD=325V

I

D

=3.6A

R

G

=25Ω (Note4,5)

- 20 -

ns

Turn-on Rise time

t

r

- 15 -

Turn-off Delay time

t

d(off)

- 45 -

Turn-off Fall time

t

f

- 15 -

Input Capacitance

C

iss

VDS=25V, VGS=0V, f=1.0MHz

- 510 -

pF

Output Capacitance

C

oss

- 60 -

Reverse Transfer Capacitance

C

rss

- 6.5 -

Source-Drain Diode Ratings

Continuous Source Current

I

S

VGS<V

th

- - 3.6 A

Pulsed Source Current

I

SP

- - 14.4

Diode Forward Voltage

V

SD

IS=3.6A, VGS=0V

- - 1.4 V

Reverse Recovery Time

t

rr

IS=3.6A, VGS=0V,

dIs/dt=100A/μ

s

- 350 - ns

Reverse Recovery Charge

Q

rr

- 2.1 -

μC

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 2) L =15mH, I

S

=3.6A, VDD=50V, R

G

=25Ω, Starting Tj=25℃.

Note 3) I

S

≤7.0A, dI/dt≤200A/㎲, VDD≤BV

DSS

, Starting T

j

=25℃.

Note 4) Pulse Test : Pulse width ≤

300㎲, Duty Cycle ≤ 2%.

Note 5) Essentially independent of operating temperature.

Marking

1

KF4N65

701

P

1

KF4N65

2

F

713

2

1

PRODUCT NAME

2

LOT NO

2011. 6. 21 3/7

KF4N65P/F

Revision No : 0

Fig1. ID - V

100

(A)

D

10

1

Drain Current I

0.1

0.1 10

Drain - Source Voltage VDS (V)

DSS

1.2

VGS = 0V

= 250

I

DS

1.1

1.0

0.9

0.8

Normalized Breakdown Voltage BV

-100 -50

Junction Temperature Tj ( )

VGS=5V

1100

Fig3. BV

DSS

050

DS

VGS=10V, 7V

- T

j

C

100

150

Fig2. ID - V

VDS=25V

1

10

(A)

D

100

C

25

0

10

Drain Current I

-1

10

Gate - Source Voltage VGS (V)

6.0

5.0

(Ω)

4.0

DS(ON)

3.0

2.0

1.0

On - Resistance R

0

042318567

C

684102

Fig4. R

DS(ON)

Drain Current I

- I

VGS=7V

D

GS

D

VGS=10V

(A)

Fig5. IS - V

1

(A)

10

S

150

0

10

Reverse Drain Current I

-1

10

0.2 0.4 0.8 1.0 1.20.6 1.4

Source - Drain Voltage V

C

SD

3.0

=10V

V

GS

= 1.8A

I

DS

2.5

2.0

25

C

(V)

SD

1.5

1.0

0.5

Normalized On Resistance

0.0

Fig6. R

0 50-100 -50 100 150

Junction Temperature Tj ( )

DS(ON)

- T

j

C

2011. 6. 21 4/7

KF4N65P/F

Revision No : 0

Fig 7. C - V

4

10

3

10

2

10

Capacitance (pF)

1

10

0

10

0 10203040

DS

Drain - Source Voltage VDS (V)

Fig9. Safe Operation Area

2

10

DS

(KF4N65P)

(V)

1

10

(A)

0

10

D

Operation in this area is limited by R

-1

10

Drain Current I

Tc= 25 Tj = 150 Single nonrepetitive pulse

-2

10

0

10

DS(ON)

C

1

10

Drain - Source Voltage V

Fig8. Qg- V

12

ID=3.6A

V

10

C

iss

C

oss

(V)

GS

8

6

DS

GS

= 520V

4

C

rss

2

Gate - Source Voltage V

0

14 16621081240

Gate - Charge

Qg (nC)

Fig10. Safe Operation Area

2

10

DS

(KF4N65F)

10ms

(V)

10µs

100µs

1ms

DC

10

3

10µs

100µs

1ms

10ms

DC

10

1

10

(A)

0

10

D

Operation in this area is limited by R

-1

10

Drain Current I

3

Tc= 25

C

Tj = 150 Single nonrepetitive pulse

-2

10

0

10

DS(ON)

1

10

Drain - Source Voltage V

Fig11. ID - T

j

4

3

(A)

D

2

1

Drain Current I

0

Junction Temperature Tj ( )

75 15012550 10025

C

2011. 6. 21 5/7

KF4N65P/F

Revision No : 0

Fig12. Transient Thermal Response Curve

1

10

0

10

Duty=0.5

0.2

0.1

-1

10

0.05

0.02

0.01

Transient Thermal Resistance

-2

10

-5

10

Single Pulse

-4

10

Fig13. Transient Thermal Response Curve

1

10

.5

Duty=0

0

10

0.2

0.1

0.05

-1

10

0.02

0.01

S

-2

10

-5

10

Normalized Transient Thermal Resistance

ingle Pulse

-4

10

-3

-2

10

TIME (sec)

-2

10

TIME (sec)

P

DM

- Duty Factor, D= t1/t

-1

10

P

DM

- Duty Factor, D= t1/t

-1

10

t

1

0

t

1

0

(KF4N65P)

t

2

(KF4N65F)

t

2

10

1

2011. 6. 21 6/7

KF4N65P/F

Revision No : 0

Fig14. Gate Charge

V

GS

Fast Recovery Diode

0.8 V

DSS

I

D

1.0 mA

V

GS

Fig15. Single Pulsed Avalanche Energy

50V

10 V

I

D

V

DS

BV

DSS

Q

gs

EAS= LI

Q

gd

1

2

AS

2

BV

DSS

Q

DSS

- V

g

DD

Q

L

I

AS

25Ω

10 V

Fig16. Resistive Load Switching

0.5 V

DSS

25 Ω

10V

I

(t)

V

DS

V

GS

V

DD

D

VDS(t)

Time

t

p

V

DS

90%

R

L

10%

V

GS

t

V

DS

V

GS

t

d(on)

t

r

on

t

d(off)

t

f

t

off

2011. 6. 21 7/7

KF4N65P/F

Revision No : 0

Fig17. Source - Drain Diode Reverse Recovery and dv /dt

0.8 V

DSS

I

F

10V

DUT

driver

V

GS

V

DS

I

S

I

SD

(DUT)

V

(DUT)

DS

Body Diode Forword Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

SD

Body Diode Forword Voltage drop

di/dt

V

DD