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2010. 8. 18 1/6
SEMICONDUCTOR
TECHNICAL DATA
KF4N20LW
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
Revision No : 0
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for LED Lighting and
switching mode power supplies.
FEATURES
·V
DSS(Min.)
= 200V, ID= 1A
·
Drain-Source ON Resistance : R
DS(ON)
=1.05 Ω(max) @V
GS
=10V
·
Qg(typ.) =2.9nC
·
V
th(Max.)
= 2V
MAXIMUM RATING (Tc=25℃)
* : Surface Mounted on FR4 Board (40mm×40mm, 1.0t)
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DSS
200 V
Gate-Source Voltage
V
GSS
±20
V
Drain Current
@T
C
=25℃
I
D
1*
A
@T
C
=100℃
0.6*
Pulsed (Note1)
I
DP
4*
Single Pulsed Avalanche Energy
(Note 2)
E
AS
52
mJ
Repetitive Avalanche Energy
(Note 1)
E
AR
0.2
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt 5.5
V/ns
Drain Power
Dissipation
T
A
=25℃
P
D
2.2* W
Derate above25℃
0.018
W/℃
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Characteristics
Thermal Resistance, Junction-toAmbient
R
thJA
57*
℃/W
PIN CONNECTION
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KF4N20LW
Revision No : 0
ELECTRICAL CHARACTERISTICS (Tc=25℃)
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 78mH, I
S
=1A, VDD=50V, R
G
= 25Ω, Starting Tj= 25℃.
Note 3) I
S
≤2A, dI/dt≤300A/㎲, VDD≤BV
DSS
, Starting T
j
= 25℃.
Note 4) Pulse Test : Pulse width ≤
300㎲, Duty Cycle ≤ 2%.
Note 5) Essentially independent of operating temperature.
Marking
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250μA, V
GS
=0V
200 - - V
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
jID
=250μA, Referenced to 25℃
- 0.2 -
V/℃
Drain Cut-off Current
I
DSS
VDS=200V, VGS=0V,
- - 10
μA
Gate Threshold Voltage
V
th
VDS=VGS, I
D
=250μA
1.0 - 2.0 V
Gate Leakage Current
I
GSS
V
GS
=±20V, V
DS
=0V
- -
±100
nA
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=0.5A
- 0.85 1.05
Ω
VGS=5V, ID=0.5A
0.89 1.10
Dynamic
Total Gate Charge
Q
g
VDS=150V, ID=3.6A
V
GS
=5V (Note4,5)
- 2.9 3.8
nCGate-Source Charge
Q
gs
- 0.6 -
Gate-Drain Charge
Q
gd
- 2.2 -
Turn-on Delay time
t
d(on)
VDD=100V, ID=3.6A
R
G
=25Ω (Note4,5)
V
GS
=5V
- 10 -
ns
Turn-on Rise time
t
r
- 20 -
Turn-off Delay time
t
d(off)
- 15 -
Turn-off Fall time
t
f
- 15 -
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1.0MHz
- 170 220
pFOutput Capacitance
C
oss
- 25 -
Reverse Transfer Capacitance
C
rss
- 4.0 -
Source-Drain Diode Ratings
Continuous Source Current
I
S
VGS<V
th
- - 1
A
Pulsed Source Current
I
SP
- - 4
Diode Forward Voltage
V
SD
IS=1A, VGS=0V
- - 1.4 V
Reverse Recovery Time
t
rr
IS=3.6A, VGS=0V,
dIs/dt=100A/㎲
- 100 - ns
Reverse Recovery Charge
Q
rr
- 0.30 -
μC
KF4N20LW
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KF4N20LW
Revision No : 0
V
= 3V
GS
3.0
2.5
2.0
1.5
1.0
0.5
0
24668
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KF4N20LW
Revision No : 0
Fig 7. C - V
DS
1000
100
10
Capacitance (pF)
1
0 5 15 25 3510 20 30 40
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area
2
10
Operation in this
(A)
D
area is limited by R
1
10
0
10
DS(ON)
10µs
100µs
1ms
Fig8. Qg- V
12
ID=4A
10
C
iss
C
oss
(V)
GS
V
= 40V
8
DS
6
GS
V
DS
= 160V
4
C
rss
2
Gate - Source Voltage V
0
1
0
2
Gate - Charge
Qg (nC)
Fig10. ID - T
546
j
783
1.2
1.0
(A)
0.8
D
0.6
-1
10
Drain Current I
10-
10
Tc= 25
Tj = 150
Single pulse
2
0
C
C
1
10
Drain - Source Voltage V
2
10
Duty=0.5
1
0.20
10
0.10
5
0.0
0
0.02
10
0.01
-1
10
Transient Thermal Resistance
Single Pulse
2
10
DS
10ms
100ms
(V)
DC
3
10
0.4
Drain Current I
0.2
0
025
Fig11. Transient Thermal Response Curve
50
75
100
Junction Temperature Tj ( )
C
P
DM
- Duty Factor, D= t1/t
- R
thJC
150125
t
1
t
2
T
j(max)
=
2
- T
c
P
D
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
TIME (sec)
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KF4N20LW
Revision No : 0
Fig12. Gate Charge
0.8 V
DSS
1.0 mA
V
GS
Fig13. Single Pulsed Avalanche Energy
V
5 V
R
L
I
D
V
DS
GS
Q
gs
Q
gd
Q
g
Q
50V
25Ω
10 V
Fig14. Resistive Load Switching
BV
BV
DSS
DSS
- V
DD
2
BV
DSS
1
EAS= LI
2
AS
L
I
AS
I
(t)
V
DS
V
GS
V
DD
D
VDS(t)
Time
t
p
V
DS
90%
R
L
0.5 V
DSS
25 Ω
V
DS
V
10V
GS
10%
V
GS
t
d(on)
t
r
t
on
t
d(off)
t
f
t
off
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KF4N20LW
Revision No : 0
Fig15. Source - Drain Diode Reverse Recovery and dv /dt
0.5 V
DSS
10V
DUT
V
DS
L
I
S
I
SD
(DUT)
V
DS
Body Diode Forword Current
Body Diode Reverse Current
Body Diode Recovery dv/dt
di/dt
I
RM
(DUT)
driver
V
GS
Body Diode Forword Voltage drop
V
SD
V
DD
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