Page 1
2012. 7. 26 1/6
SEMICONDUCTOR
TECHNICAL DATA
KF3N80F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
Revision No : 0
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
·V
DSS
=800V, ID=3A
·Drain-Source ON Resistance :
R
DS(ON)
(Max)=4.2Ω @V
GS
=10V
·Qg(typ.)=12nC
MAXIMUM RATING (Tc=25℃)
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
CHARACTERISTIC
SYMBOL
RATING UNIT
Drain-Source Voltage
V
DSS
800 V
Gate-Source Voltage
V
GSS
±30
V
Drain Current
@T
C
=25℃
I
D
3*
A
@T
C
=100℃
1.9*
Pulsed (Note1)
I
DP
6*
Single Pulsed Avalanche Energy
(Note 2)
E
AS
175
mJ
Repetitive Avalanche Energy
(Note 1)
E
AR
4.4
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt 4.5
V/ns
Drain Power
Dissipation
Tc=25℃
P
D
32 W
Derate above 25℃
0.25
W/℃
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Characteristics
Thermal Resistance, Junction-to-Case
R
thJC
3.9
℃/W
Thermal Resistance,
Junction-to-Ambient
R
thJA
62.5
℃/W
E
K
L
D
Q
A
M
NN
123
C
F
O
B
G
J
R
H
1. GATE
2. DRAIN
3. SOURCE
TO-220IS (1)
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
Q
R
MILLIMETERS
_
10.16 0.2
+
_
15.87 0.2
+
_
2.54 0.2
+
_
0.8 0.1
+
_
3.18 0.1
+
_
3.3 0.1
+
_
12.57 0.2
+
_
0.5 0.1
+
_
13.0 0.5
+
_
3.23 0.1
+
1.47 MAX
1.47 MAX
_
2.54 0.2
+
_
6.68 0.2
+
_
+
4.7 0.2
_
2.76 0.2
+
G
D
S
Page 2
2012. 7. 26 2/6
KF3N80F
Revision No : 0
ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250μA, V
GS
=0V
800 - - V
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
jID
=250μA, Referenced to 25℃
- 0.8 -
V/℃
Drain Cut-off Current
I
DSS
VDS=800V, VGS=0V
- - 10
μA
Gate Threshold Voltage
V
th
VDS=VGS, I
D
=250μA
2.5 - 4.5 V
Gate Leakage Current
I
GSS
V
GS
=±30V, V
DS
=0V
- -
±100
nA
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=1.5A
- 3.4 4.2
Ω
Dynamic
Total Gate Charge
Q
g
VDS=480V, ID=3A
V
GS
=10V (Note4,5)
- 12 -
nCGate-Source Charge
Q
gs
- 6 -
Gate-Drain Charge
Q
gd
- 2 -
Turn-on Delay time
t
d(on)
VDD=400V
I
D
=3A
R
G
=25Ω (Note4,5)
- 25 -
ns
Turn-on Rise time
t
r
- 27 -
Turn-off Delay time
t
d(off)
- 60 -
Turn-off Fall time
t
f
- 30 -
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1.0MHz
- 520 -
pF
Output Capacitance
C
oss
- 60 -
Reverse Transfer Capacitance
C
rss
- 9 -
Source-Drain Diode Ratings
Continuous Source Current
I
S
VGS<V
th
- - 3
A
Pulsed Source Current
I
SP
- - 12
Diode Forward Voltage
V
SD
IS=3A, VGS=0V
- - 1.4 V
Reverse Recovery Time
t
rr
IS=3A, VGS=0V,
dIs/dt=100A/us
- 450 - ns
Reverse Recovery Charge
Q
rr
- 3.0 -
μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =37mH, I
S
=3A, VDD=50V, R
G
=25Ω, Starting Tj=25℃.
Note 3) I
S
≤3A, dI/dt≤100A/㎲, VDD≤BV
DSS
, Starting T
j
=25℃.
Note 4) Pulse Test : Pulse width
≤ 300㎲, Duty Cycle ≤ 2%.
Note 5) Essentially independent of operating temperature.
Marking
1
KF3N80
001
F
2
1
PRODUCT NAME
2
LOT NO
Page 3
2012. 7. 26 3/6
KF3N80F
Revision No : 0
10
(A)
D
1
Drain Current I
0.1
0.1 10
Drain - Source Voltage VDS (V)
Fig3. BV
DSS
1.2
VGS = 0V
= 250
I
DS
1.1
1.0
Fig1. ID - V
DS
VGS=10V
VGS=6V
VGS=5V
(A)
D
1
10
0
10
Drain Current I
-1
1100
- T
DSS
j
10
(Ω)
DS(ON)
6
5
4
3
Fig2. ID - V
V
=20V
DS
25
C
100
C
Gate - Source Voltage VGS (V)
Fig4. R
DS(ON)
VGS=6V
684102
GS
- I
D
VGS=10V
0.9
0.8
Normalized Breakdown Voltage BV
-100 -50
050
Junction Temperature Tj ( )
(A)
S
Fig5. IS - V
1
10
100
C
0
10
SD
25
C
Reverse Drain Current I
-1
10
0.4 0.8 1.0 1.20.6 1.4
C
100
150
2
1
On - Resistance R
0
02134
(A)
D
- T
j
3.0
2.5
Drain Current I
Fig6. R
=10V
V
GS
I
= 3A
DS
DS(ON)
2.0
1.5
1.0
0.5
Normalized On Resistance
0.0
0 50-100 -50 100 150
Source - Drain Voltage V
SD
(V)
Junction Temperature Tj ( )
C
Page 4
2012. 7. 26 4/6
KF3N80F
Revision No : 0
)
Fig 7. C - V
DS
1000
100
10
Capacitance (pF)
1
0 10203040
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area
10
(A)
1
D
Fig8. Qg- V
12
ID=3A
C
iss
C
oss
(V)
GS
10
8
V
= 480V
DS
6
GS
4
C
rss
2
Gate - Source Voltage V
0
14621081240
Gate - Charge
10µs
100µs
1ms
Qg (nC)
10ms
DC
0.1
Drain Current I
0.01
Tc= 25
Tj = 150
Single pulse
1
Operation in this
area is limited by R
C
C
DS(ON)
10
Drain - Source Voltage V
100 1000
(V)
DS
Fig10. Transient Thermal Response Curve
10
5
.
Duty=0
1
0.2
0
.1
0.05
0.1
0.02
Single P
u
l
0.01
Transient Thermal Resistance
0.01
0.00001 0.01 0.01 0.1 10 10
0.0001
se
TIME (sec
Page 5
2012. 7. 26 5/6
KF3N80F
Revision No : 0
Fig11. Gate Charge
V
GS
Fast
Recovery
Diode
0.8 V
DSS
I
D
1.0 mA
V
GS
Fig12. Single Pulsed Avalanche Energy
50V
10 V
I
D
V
DS
BV
DSS
Q
gs
EAS= LI
Q
gd
1
2
AS
2
BV
BV
DSS
Q
- V
g
DSS
DD
Q
L
I
AS
25Ω
10 V
Fig13. Resistive Load Switching
0.5 V
DSS
25 Ω
10V
I
(t)
V
DS
V
GS
V
DD
D
VDS(t)
Time
t
p
V
DS
90%
R
L
10%
V
GS
t
V
DS
V
GS
t
d(on)
t
r
on
t
d(off)
t
f
t
off
Page 6
2012. 7. 26 6/6
KF3N80F
Revision No : 0
Fig14. Source - Drain Diode Reverse Recovery and dv /dt
0.8 V
DSS
I
F
10V
DUT
driver
V
GS
V
DS
I
S
I
SD
(DUT)
V
(DUT)
DS
Body Diode Forword Current
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
Body Diode Forword Voltage drop
di/dt
V
DD
Loading...