Page 1
2012. 8. 10 1/6
SEMICONDUCTOR
TECHNICAL DATA
KF3N80D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
Revision No : 0
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for LED Lighting and
switching mode power supplies.
FEATURES
·V
DSS
= 800V, ID= 2.7A
·Drain-Source ON Resistance : R
DS(ON)
=4.2Ω @V
GS
= 10V
·Qg(typ) =12nC
MAXIMUM RATING (Ta=25℃)
* : Drain current limited by maximum junction temperature.
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DSS
800 V
Gate-Source Voltage
V
GSS
±30
V
Drain Current
@T
C
=25℃
I
D
2.7
A
@T
C
=100℃
1.7
Pulsed (Note1)
I
DP
6*
Single Pulsed Avalanche Energy
(Note 2)
E
AS
175
mJ
Repetitive Avalanche Energy
(Note 1)
E
AR
4.4
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt 4.5
V/ns
Drain Power
Dissipation
Tc=25℃
P
D
69.4 W
Derate above 25℃
0.55
W/℃
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Characteristics
Thermal Resistance, Junction-to-Case
R
thJC
1.8
℃/W
Thermal Resistance, Junction-toAmbient
R
thJA
110
℃/W
G
D
S
PIN CONNECTION
KF3N80D
KF3N80I
H
A
C
J
G
FF
K
D
B
E
L
N
M
DIM
MILLIMETERS
A
B
C
D
E
F
G
H
J
K
L
M
N
O
_
6.60 0.20+
_
6.10 0.20+
_
5.34 0.30+
_
0.70 0.20+
_
2.70 0.15
+
_
2.30 0.10
+
0.96 MAX
0.90 MAX
_
1.80 0.20+
_
2.30 0.10+
_
0.50 0.10
+
_
+
0.50 0.10
0.70 MIN
Max 0.1
123
O
A
C
M
N
G
FF
123
D
B
K
E
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
H
P
L
J
DIM
MILLIMETERS
_
A
B
C
D
E
F
G
H
J
K
L
M
N
P
+
6.6 0.2
_
6.1 0.2
+
_
5.34 0.3
+
_
0.7 0.2
+
_
9.3 0.3
+
_
2.3 0.2
+
_
0.76 0.1
+
_
2.3 0.1
+
_
0.5 0.1
+
_
1.8 0.2
+
_
0.5 0.1
+
_
1.0 0.1
+
0.96 MAX
_
1.02 0.3
+
IPAK(1)
Page 2
2012. 8. 10 2/6
KF3N80D/I
Revision No : 0
Marking
ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250μA, V
GS
=0V
800 - - V
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
jID
=250μA, Referenced to 25℃
- 0.8 -
V/℃
Drain Cut-off Current
I
DSS
VDS=800V, VGS=0V
- - 10
μA
Gate Threshold Voltage
V
th
VDS=VGS, I
D
=250μA
2.5 - 4.5 V
Gate Leakage Current
I
GSS
V
GS
=±30V, V
DS
=0V
- -
±100
nA
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=1.35A
- 3.4 4.2
Ω
Dynamic
Total Gate Charge
Q
g
VDS=480V, ID=3A
V
GS
=10V (Note4,5)
- 12 -
nCGate-Source Charge
Q
gs
- 6 -
Gate-Drain Charge
Q
gd
- 2 -
Turn-on Delay time
t
d(on)
VDD=400V
I
D
=3A
R
G
=25Ω (Note4,5)
- 25 -
ns
Turn-on Rise time
t
r
- 27 -
Turn-off Delay time
t
d(off)
- 60 -
Turn-off Fall time
t
f
- 30 -
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1.0MHz
- 520 -
pF
Output Capacitance
C
oss
- 60 -
Reverse Transfer Capacitance
C
rss
- 9 -
Source-Drain Diode Ratings
Continuous Source Current
I
S
VGS<V
th
- - 3
A
Pulsed Source Current
I
SP
- - 12
Diode Forward Voltage
V
SD
IS=2.7A, VGS=0V
- - 1.4 V
Reverse Recovery Time
t
rr
IS=3A, VGS=0V,
dIs/dt=100A/us
- 450 - ns
Reverse Recovery Charge
Q
rr
- 3.0 -
μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =37mH, I
S
=3A, VDD=50V, R
G
=25Ω, Starting Tj=25℃.
Note 3) I
S
≤3A, dI/dt≤100A/㎲, VDD≤BV
DSS
, Starting T
j
=25℃.
Note 4) Pulse Test : Pulse width
≤ 300㎲, Duty Cycle ≤ 2%.
Note 5) Essentially independent of operating temperature.
1
KF3N80
001
D
1
KF3N80
2
001
I
2
1
PRODUCT NAME
2
LOT NO
Page 3
2012. 8. 10 3/6
KF3N80D/I
Revision No : 0
10
(A)
D
1
Drain Current I
0.1
0.1 10
DSS
1.2
VGS = 0V
= 250
I
DS
1.1
1.0
Fig1. ID - V
DS
VGS=10V
VGS=6V
VGS=5V
1100
Drain - Source Voltage VDS (V)
Fig3. BV
DSS
- T
j
1
10
V
=20V
DS
(A)
D
0
10
Drain Current I
10
100
-1
6
5
(Ω)
4
DS(ON)
3
Fig2. ID - V
25
C
GS
C
684102
Gate - Source Voltage VGS (V)
Fig4. R
VGS=6V
DS(ON)
- I
D
VGS=10V
0.9
0.8
Normalized Breakdown Voltage BV
-100 -50
050
Junction Temperature Tj ( )
(A)
S
Fig5. IS - V
1
10
100
C
0
10
SD
25
C
Reverse Drain Current I
-1
10
0.4 0.8 1.0 1.20.6 1.4
C
100
150
2
1
On - Resistance R
0
02134
(A)
D
- T
j
3.0
2.5
V
GS
I
DS
=10V
= 1.35A
Drain Current I
Fig6. R
DS(ON)
2.0
1.5
1.0
0.5
Normalized On Resistance
0.0
0 50-100 -50 100 150
Source - Drain Voltage V
SD
(V)
Junction Temperature Tj ( )
C
Page 4
2012. 8. 10 4/6
KF3N80D/I
Revision No : 0
)
Fig 7. C - V
DS
1000
100
10
Capacitance (pF)
1
0 10203040
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area
10
(A)
1
D
Operation in this
0.1
Drain Current I
0.01
Tc= 25
Tj = 150
Single pulse
1
area is limited by R
C
C
Drain - Source Voltage V
DS(ON)
10
100 1000
(V)
DS
Fig8. Qg- V
12
ID=3A
C
iss
C
oss
(V)
GS
10
8
V
= 480V
DS
6
GS
4
C
rss
2
Gate - Source Voltage V
0
14621081240
Gate - Charge
Fig10. ID- T
Qg (nC)
j
3
10µs
100µs
1ms
10ms
DC
2.5
2
(A)
D
1.5
1
0.5
Drain Current I
0
7525 125100 150500
Junction Temperature
Tj ( C)
Fig11. Transient Thermal Response Curve
1
10
0
10
-1
10
Transient Thermal Resistance
-2
10
10
Duty=0
0.20
0
.10
0.05
0.02
0.01
-5
50
.
Single P
u
-4
10
l
se
-3
10
-2
10
-1
10
0
10
1
10
TIME (sec
Page 5
2012. 8. 10 5/6
KF3N80D/I
Revision No : 0
Fig12. Gate Charge
V
GS
Fast
Recovery
Diode
0.8 V
DSS
I
D
1.0 mA
V
GS
Fig13. Single Pulsed Avalanche Energy
50V
10 V
I
D
V
DS
BV
DSS
Q
gs
EAS= LI
Q
gd
1
2
AS
2
BV
BV
DSS
Q
- V
g
DSS
DD
Q
L
I
AS
25Ω
10 V
Fig14. Resistive Load Switching
0.5 V
DSS
25 Ω
10V
I
(t)
V
DS
V
GS
V
DD
D
VDS(t)
Time
t
p
V
DS
90%
R
L
10%
V
GS
t
V
DS
V
GS
t
d(on)
t
r
on
t
d(off)
t
f
t
off
Page 6
2012. 8. 10 6/6
KF3N80D/I
Revision No : 0
Fig15. Source - Drain Diode Reverse Recovery and dv /dt
0.8 V
DSS
I
F
10V
DUT
driver
V
GS
V
DS
I
S
I
SD
(DUT)
V
(DUT)
DS
Body Diode Forword Current
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
Body Diode Forword Voltage drop
di/dt
V
DD
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