Datasheet kf3n60p-f Datasheet

2010. 12. 20 1/2

SEMICONDUCTOR

TECHNICAL DATA

KF3N60P/F

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 0

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for electronic ballast and

switching mode power supplies.

FEATURES

·V

DSS

= 600V, ID= 3A

·

Drain-Source ON Resistance : R

DS(ON)

=3.3Ω @V

GS

= 10V

·

Qg(typ) = 8.5nC

MAXIMUM RATING (Ta=25℃)

* : Drain current limited by maximum junction temperature.

CHARACTERISTIC SYMBOL

RATING

UNIT

KF3N60P KF3N60F

Drain-Source Voltage

V

DSS

600 V

Gate-Source Voltage

V

GSS

±30

V

Drain Current

@T

C

=25℃

I

D

3 3*

A

@T

C

=100℃

1.9 1.9*

Pulsed (Note1)

I

DP

7 7*

Single Pulsed Avalanche Energy (Note 2)

E

AS

120

mJ

Repetitive Avalanche Energy (Note 1)

E

AR

3.2

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt 4.5

V/ns

Drain Power Dissipation

Tc=25℃

P

D

73 31 W

Derate above 25℃

0.58 0.25

W/℃

Maximum Junction Temperature

T

j

150

℃

Storage Temperature Range

T

stg

-55～150

℃

Thermal Characteristics

Thermal Resistance, Junction-to-Case

R

thJC

1.7 4

℃/W

Thermal Resistance, Junction-toAmbient

R

thJA

62.5 62.5

℃/W

G

D

S

PIN CONNECTION

KF3N60P

KF3N60F

(KF3N60P, KF3N60F)

A

E

I

K

M

D

NN

123

E

K

L

D

NN

123

Q

* Single Gauge Lead Frame

L

A

M

O

F

G

B

Q

J

1. GATE

2. DRAIN

3. SOURCE

TO-220AB

F

O

B

G

J

H

1. GATE

2. DRAIN

3. SOURCE

C

DIM MILLIMETERS

A B C D E F

P

G H

I J

K

L

H

M N O

P

Q

C

DIM

R

15.95 MAX

1.3+0.1/-0.05

0.5+0.1/-0.05

13.08 0.3

2.54 0.2

MILLIMETERS

10.16 0.2

A

15.87 0.2

B

C

D

E

F

12.57 0.2

G

H

13.0 0.5

J

K

1.47 MAX

L

1.47 MAX

M

N

O

Q

R

_

9.9 0.2

+

_ +

0.8 0.1 _

3.6 0.2

+

_ +

2.8 0.1

3.7

1.5 _

+

1.46 _

+

1.4 0.1 _

+

1.27 0.1 _

+

_ +

4.5 0.2

_ +

2.4 0.2

_

9.2 0.2

+

_

+ _

+

_

2.54 0.2

+

_

0.8 0.1

+

_

3.18 0.1

+

_

3.3 0.1

+

_

+

_

0.5 0.1

+ _

+

_

3.23 0.1

+

_

2.54 0.2

+ _

6.68 0.2

+ _

+

4.7 0.2

_

2.76 0.2

+

TO-220IS (1)

2010. 12. 20 2/2

KF3N60P/F

Revision No : 0

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage

BV

DSS

I

D

=250㎂ , V

GS

=0V

600 - - V

Breakdown Voltage Temperature Coefficient

ΔBV

DSS

/ΔT

jID

=250㎂, Referenced to 25℃

- 0.61 -

V/℃

Drain Cut-off Current

I

DSS

VDS=600V, VGS=0V,

- - 10

㎂

Gate Threshold Voltage

V

th

VDS=VGS, I

D

=250㎂

2.5 - 4.5 V

Gate Leakage Current

I

GSS

V

GS

=±30V, V

DS

=0V

- -

±100

nA

Drain-Source ON Resistance

R

DS(ON)

VGS=10V, ID=1.5A

- 2.8 3.3

Ω

Dynamic

Total Gate Charge

Q

g

VDS=480V, ID=3A

V

GS

=10V (Note4,5)

- 8.5 -

nCGate-Source Charge

Q

gs

- 1.8 -

Gate-Drain Charge

Q

gd

- 3.6 -

Turn-on Delay time

t

d(on)

VDD=300V

I

D

=3A

R

G

=25Ω (Note4,5)

- 25 -

ns

Turn-on Rise time

t

r

- 25 -

Turn-off Delay time

t

d(off)

- 40 -

Turn-off Fall time

t

f

- 20 -

Input Capacitance

C

iss

VDS=25V, VGS=0V, f=1.0MHz

- 355 -

pF

Output Capacitance

C

oss

- 45 -

Reverse Transfer Capacitance

C

rss

- 4.4 -

Source-Drain Diode Ratings

Continuous Source Current

I

S

VGS<V

th

- - 3 A

Pulsed Source Current

I

SP

- - 12

Diode Forward Voltage

V

SD

IS=3A, VGS=0V

- - 1.4 V

Reverse Recovery Time

t

rr

IS=3A, VGS=0V,

dIs/dt=100A/㎲

- 300 - ns

Reverse Recovery Charge

Q

rr

- 1.5 -

μC

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 2) L=24.5mH, I

S

=3A, VDD=50V, R

G

=25Ω, Starting Tj=25℃.

Note 3) I

S

≤3A, dI/dt≤100A/㎲, VDD≤BV

DSS

, Starting T

j

=25℃.

Note 4) Pulse Test : Pulse width ≤

300㎲, Duty Cycle≤2%.

Note 5) Essentially independent of operating temperature.

Marking

1

KF3N60

001

P

1

2

KF3N60

001

F

2

1

PRODUCT NAME

2

LOT NO

2010. 12. 20 37

K3N60P/F

Revision No : 0

1

10

(A)

0

D

10

-1

10

Drain Current I

-2

10

0.1 10

DSS

1.2

VGS = 0V

= 250

I

DS

1.1

1.0

Fig1. ID - V

DS

VGS=10V

VGS=7V

VGS=5V

1100

Drain - Source Voltage VDS (V)

Fig3. BV

DSS

- T

j

VDS=30V

1

10

(A)

D

0

10

Drain Current I

-1

10

6.0

5.0

(Ω)

4.0

DS(ON)

3.0

TC=100

Fig2. ID - V

C

GS

25

C

684102

Gate - Source Voltage VGS (V)

Fig4. R

VGS=6V

DS(ON)

- I

D

VGS=10V

0.9

0.8

Normalized Breakdown Voltage BV

-100 -50

050

Junction Temperature Tj ( )

(A)

S

Fig5. IS - V

2

10

1

10

TC=100

C

0

10

SD

25

C

Reverse Drain Current I

-1

10

0.2 0.4 0.8 1.0 1.20.6 1.4 1.6 1.8

C

100

150

2.0

1.0

On - Resistance R

0

0426315

(A)

D

- T

j

3.0

2.5

V I

GS

DS

=10V

= 1.5A

Drain Current I

Fig6. R

DS(ON)

2.0

1.5

1.0

0.5

Normalized On Resistance

0.0 0 50-100 -50 100 150

Source - Drain Voltage V

SD

(V)

Junction Temperature Tj ( )

C

2010. 12. 20 47

K3N60P/F

Revision No : 0

Fig 7. C - V

DS

10000

100

10

Capacitance (pF)

1

05 15 25 3510 20 30 40

Drain - Source Voltage VDS (V)

Fig9. Safe Operation Area

1

10

Operation in this

(A)

D

area is limited by R

0

10

DS(ON)

C

iss

C

oss

C

rss

(KF3N60P)

10µs

100µs

1ms

12

ID=3A

10

(V)

GS

8

6

4

2

Gate - Source Voltage V

0

2

0

4

Fig10. Safe Operation Area

1

10

Operation in this area is limited by R

(A)

0

D

10

Fig8. Qg- V

Gate - Charge

DS(ON)

GS

V

= 480V

DS

10812

Qg (nC)

14 166

(KF3N60F)

10µs

100µs

1ms

-1

10

Drain Current I

2

10

Tc= 25 Tj = 150 Single pulse

0

3.5

3.0

2.5

(A)

D

2.0

1.5

1.0

Drain Current I

0.5

C

1

10

Drain - Source Voltage V

Fig11. ID - T

10ms

DC

2

10

(V)

DS

3

10

-1

10

Drain Current I

2

10

Tc= 25 Tj = 150 Single pulse

0

C

1

10

Drain - Source Voltage V

2

10

DS

(V)

10ms

DC

3

10

j

0

Junction Temperature Tj ( )

75 15012550 10025

C

2010. 12. 20 57

K3N60P/F

Revision No : 0

Fig12. Transient Thermal Response Curve

-1

10

0

10

Duty=

0.5

0.2

0.1

-1

10

0.05

2

0.0

0.01

Transient Thermal Resistance

Single Pulse

-2

10

-5

10

-4

10

P

DM

- Duty Factor, D= t1/t

- R

10

-3

-2

10

-1

10

TIME (sec)

Fig13. Transient Thermal Response Curve

thJC

(KF3N60P)

t

1

T

j(max)

=

P

0

10

t

2

- T

c

D

1

10

-1

10

Duty=0.5

0

10

0.2

0.1

0.05

-1

10

.02

0

0.01

Transient Thermal Resistance

Single Pulse

-2

10

-5

10

-4

10

-3

-2

10

TIME (sec)

P

DM

- Duty Factor, D= t1/t

- R

-1

10

thJC

(KF3N60F)

t

1

T

j(max)

=

P

0

10

t

2

- T

c

D

1

10

2010. 12. 20 67

K3N60P/F

Revision No : 0

Fig14. Gate Charge

V

GS

Fast Recovery Diode

0.8 V

DSS

I

D

1.0 mA

V

GS

Fig15. Single Pulsed Avalanche Energy

50V

10 V

I

D

V

DS

BV

DSS

Q

gs

EAS= LI

Q

gd

1

2

AS

2

BV

DSS

Q

DSS

- V

g

DD

Q

L

I

AS

25Ω

10 V

Fig16. Resistive Load Switching

0.5 V

DSS

25 Ω

10V

I

(t)

V

DS

V

GS

V

DD

D

VDS(t)

Time

t

p

V

DS

90%

R

L

10%

V

GS

t

V

DS

V

GS

t

d(on)

t

r

on

t

d(off)

t

f

t

off

2010. 12. 20 77

K3N60P/F

Revision No : 0

Fig17. Source - Drain Diode Reverse Recovery and dv /dt

0.5 V

DSS

I

F

10V

DUT

driver

V

GS

V

DS

I

S

I

SD

(DUT)

V

(DUT)

DS

Body Diode Forword Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

SD

Body Diode Forword Voltage drop

di/dt

V

DD