Page 1
2012. 7. 12 1/7
SEMICONDUCTOR
TECHNICAL DATA
KF3N60D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
Revision No : 1
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
·V
DSS
= 600V, ID= 2.3A
·Drain-Source ON Resistance : R
DS(ON)
=3.3Ω @V
GS
= 10V
·Qg(typ) = 8.5nC
MAXIMUM RATING (Ta=25℃)
* : Drain current limited by maximum junction temperature.
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DSS
600 V
Gate-Source Voltage
V
GSS
±30
V
Drain Current
@T
C
=25℃
I
D
2.3
A
@T
C
=100℃
1.46
Pulsed (Note1)
I
DP
7*
Single Pulsed Avalanche Energy
(Note 2)
E
AS
120
mJ
Repetitive Avalanche Energy
(Note 1)
E
AR
3.2
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt 4.5
V/ns
Drain Power
Dissipation
Tc=25℃
P
D
44.6 W
Derate above 25℃
0.34
W/℃
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Characteristics
Thermal Resistance, Junction-to-Case
R
thJC
2.8
℃/W
Thermal Resistance, Junction-toAmbient
R
thJA
110
℃/W
G
D
S
PIN CONNECTION
KF3N60D
KF3N60I
H
A
C
J
G
FF
K
D
B
E
L
N
M
DIM
MILLIMETERS
A
B
C
D
E
F
G
H
J
K
L
M
N
O
_
6.60 0.20+
_
6.10 0.20+
_
5.34 0.30+
_
0.70 0.20+
_
2.70 0.15
+
_
2.30 0.10
+
0.96 MAX
0.90 MAX
_
1.80 0.20+
_
2.30 0.10+
_
0.50 0.10
+
_
+
0.50 0.10
0.70 MIN
0.1 MAX
123
O
A
C
M
N
G
FF
123
D
B
K
E
1. GATE
2. DRAIN
3. SOURCE
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
H
P
L
J
DIM
MILLIMETERS
_
A
B
C
D
E
F
G
H
J
K
L
M
N
P
+
6.6 0.2
_
6.1 0.2
+
_
5.34 0.3
+
_
0.7 0.2
+
_
9.3 0.3
+
_
2.3 0.2
+
_
0.76 0.1
+
_
2.3 0.1
+
_
0.5 0.1
+
_
1.8 0.2
+
_
0.5 0.1
+
_
1.0 0.1
+
0.96 MAX
_
1.02 0.3
+
IPAK(1)
Page 2
2012. 7. 12 2/7
KF3N60D/I
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250㎂ , V
GS
=0V
600 - - V
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
jID
=250㎂, Referenced to 25℃
- 0.61 -
V/℃
Drain Cut-off Current
I
DSS
VDS=600V, VGS=0V,
- - 10
㎂
Gate Threshold Voltage
V
th
VDS=VGS, I
D
=250㎂
2.5 - 4.5 V
Gate Leakage Current
I
GSS
V
GS
=±30V, V
DS
=0V
- -
±100
nA
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=1.15A
- 2.8 3.3
Ω
Dynamic
Total Gate Charge
Q
g
VDS=480V, ID=3A
V
GS
=10V (Note4,5)
- 8.5 -
nCGate-Source Charge
Q
gs
- 1.8 -
Gate-Drain Charge
Q
gd
- 3.6 -
Turn-on Delay time
t
d(on)
VDD=300V
I
D
=3A
R
G
=25Ω (Note4,5)
- 25 -
ns
Turn-on Rise time
t
r
- 25 -
Turn-off Delay time
t
d(off)
- 40 -
Turn-off Fall time
t
f
- 20 -
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1.0MHz
- 355 -
pF
Output Capacitance
C
oss
- 45 -
Reverse Transfer Capacitance
C
rss
- 4.4 -
Source-Drain Diode Ratings
Continuous Source Current
I
S
VGS<V
th
- - 3
A
Pulsed Source Current
I
SP
- - 12
Diode Forward Voltage
V
SD
IS=2.3A, VGS=0V
- - 1.4 V
Reverse Recovery Time
t
rr
IS=3A, VGS=0V,
dIs/dt=100A/
㎲
- 300 - ns
Reverse Recovery Charge
Q
rr
- 1.5 -
μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=24.5mH, I
S
=3A, VDD=50V, R
G
=25Ω, Starting Tj=25℃.
Note 3) I
S
≤3A, dI/dt≤100A/㎲, VDD≤BV
DSS
, Starting T
j
=25℃.
Note 4) Pulse Test : Pulse width
≤300㎲, Duty Cycle≤2%.
Note 5) Essentially independent of operating temperature.
Marking
1
KF3N60
001
D
1
KF3N60
2
001
I
2
1
PRODUCT NAME
2
LOT NO
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KF3N60D/I
Revision No : 1
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Revision No : 1
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