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2010. 11. 29 1/6
SEMICONDUCTOR
TECHNICAL DATA
KF3N50DZ/DS
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
Revision No : 0
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
FEATURES
·V
DSS
= 500V, ID= 2.5A
·Drain-Source ON Resistance : R
DS(ON)
=2.5Ω(Max) @V
GS
= 10V
·Qg(typ) = 7.50nC
·t
rr
(typ) = 120ns (KF3N50DS)
·t
rr
(typ) = 300ns (KF3N50DZ)
MAXIMUM RATING (Tc=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DSS
500 V
Gate-Source Voltage
V
GSS
±30
V
Drain Current
@T
C
=25℃
I
D
2.5
A
@T
C
=100℃
1.5
Pulsed (Note1)
I
DP
7
Single Pulsed Avalanche Energy
(Note 2)
E
AS
110
mJ
Repetitive Avalanche Energy
(Note 1)
E
AR
4
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt 10
V/ns
Drain Power
Dissipation
Tc=25℃
P
D
40 W
Derate above 25℃
0.32
W/℃
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Characteristics
Thermal Resistance, Junction-to-Case
R
thJC
3.1
℃/W
Thermal Resistance, Junction-toAmbient
R
thJA
110
℃/W
G
D
S
PIN CONNECTION
(KF3N50DZ/DS)
A
C
H
G
FF
123
O
D
B
J
E
K
1. GATE
2. DRAIN
3. SOURCE
DIM
L
N
M
MILLIMETERS
A
6.60 0.20+
6.10 0.20+
B
5.34 0.30+
C
D
0.70 0.20+
E
2.70 0.15
2.30 0.10
F
0.96 MAX
G
0.90 MAX
H
1.80 0.20+
J
K
2.30 0.10+
0.50 0.10
L
M
0.50 0.10
0.70 MIN
N
0.1 MAX
O
_
_
_
_
_
+
_
+
_
_
_
+
_
+
DPAK (1)
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KF3N50DZ/DS
Revision No : 0
ELECTRICAL CHARACTERISTICS (Tc=25℃)
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=22mH, I
S
=3A, VDD=50V, R
G
=25Ω, Starting Tj=25℃.
Note 3) I
S
≤3A, dI/dt≤100A/㎲, VDD≤BV
DSS
, Starting T
j
=25℃.
Note 4) Pulse Test : Pulse width
≤300㎲, Duty Cycle≤2%.
Note 5) Essentially independent of operating temperature.
Marking
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250㎂ , V
GS
=0V
500 - - V
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
jID
=250㎂, Referenced to 25℃
- 0.55 -
V/℃
Drain Cut-off Current
I
DSS
VDS=500V, VGS=0V,
- - 10
㎂
Gate Threshold Voltage
V
th
VDS=VGS, I
D
=250㎂
2.5 - 4.5 V
Gate Leakage Current
I
GSS
V
GS
=±25V, V
DS
=0V
- -
±10
㎂
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=1.25A
- 2.0 2.5
Ω
Dynamic
Total Gate Charge
Q
g
VDS=400V, ID=3A
V
GS
=10V (Note4,5)
- 8.0 -
nCGate-Source Charge
Q
gs
- 2.0 -
Gate-Drain Charge
Q
gd
- 3.5 -
Turn-on Delay time
t
d(on)
VDD=250V
I
D
=3A
R
G
=25Ω (Note4,5)
- 15 -
ns
Turn-on Rise time
t
r
- 20 -
Turn-off Delay time
t
d(off)
- 25 -
Turn-off Fall time
t
f
- 20 -
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1.0MHz
- 350 -
pF
Output Capacitance
C
oss
- 45 -
Reverse Transfer Capacitance
C
rss
- 4.5 -
Source-Drain Diode Ratings
Continuous Source Current
I
S
VGS<V
th
- - 3
A
Pulsed Source Current
I
SP
- - 12
Diode Forward Voltage
V
SD
IS=2.5A, VGS=0V
- - 1.4 V
Reverse Recovery Time
KF3N50DZ
t
rr
IS=3A, VGS=0V,
dIs/dt=100A/
㎲
- 300 -
ns
KF3N50DS - 120 -
Reverse Recovery Charge
KF3N50DZ
Q
rr
- 1.1 -
μC
KF3N50DS - 0.25 -
1
KF3N50
001
DZ
1
2
KF3N50
DS
001
2
1
PRODUCT NAME
2
LOT NO
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2010. 11. 29 3/6
KF3N50DZ/DS
Revision No : 0
Fig1. ID - V
1
10
(A)
0
D
10
-1
10
Drain Current I
-2
10
0.1 10
Drain - Source Voltage VDS (V)
Fig3. BV
DSS
1.2
VGS = 0V
= 250
I
DS
1.1
1.0
0.9
0.8
Normalized Breakdown Voltage BV
-100 -50
Junction Temperature Tj ( )
VGS=10V
1 100
DSS
050
DS
- T
VGS=7V
VGS=5V
j
100
C
150
(A)
D
10
10
Fig2. ID - V
VDS=30V
1
0
GS
TC=100
C
25
C
Drain Current I
-1
10
684102
Gate - Source Voltage VGS (V)
Fig4. R
6
5
(Ω)
4
DS(ON)
3
2
1
On - Resistance R
0
0426315
Drain Current I
DS(ON)
VGS=7V
- I
D
(A)
D
VGS=10V
Fig5. IS - V
2
10
(A)
S
1
10
TC=100
C
0
10
Reverse Drain Current I
-1
10
0.2 0.4 0.8 1.0 1.20.6 1.4 1.6 1.8
Source - Drain Voltage V
SD
3.0
V
GS
= 1.5A
I
DS
2.5
2.0
25
C
1.5
1.0
0.5
Normalized On Resistance
0.0
(V)
SD
Fig6. R
=10V
0 50-100 -50 100 150
Junction Temperature Tj ( )
DS(ON)
- T
j
C
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2010. 11. 29 4/6
KF3N50DZ/DS
Revision No : 0
)
1000
100
10
Capacitance (pF)
1
0 5 15 25 3510 20 30 40
10
Operation in this
area is limited by R
(A)
D
1
0.1
Drain Current I
0.01
Tc= 25
Tj = 150
Single pulse
0
10
Fig 7. C - V
DS
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area
DS(ON)
C
C
1
10
Drain - Source Voltage V
2
10
DS
Fig8. Qg- V
12
ID=3A
10
C
iss
C
oss
(V)
GS
8
6
GS
V
= 400V
DS
4
C
10µs
100µs
rss
1ms
2
Gate - Source Voltage V
0
2
0
Gate - Charge
3.5
3
2.5
(A)
D
6
4
Fig10. ID - T
10812
Qg (nC)
j
2
10ms
DC
1.5
1
Drain Current I
0.5
3
10
(V)
0
025
Junction Temperature Tj ( )
50
75
100
150125
C
Fig11. Transient Thermal Response Curve
10
Duty=0.5
1
0.2
0.1
0.05
0.1
0.02
Transient Thermal Resistance
0.01
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
TIME (sec
P
DM
t
1
t
2
- Duty Factor, D= t1/t
T
- R
thJC
- T
j(max)
=
P
D
2
c
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2010. 11. 29 5/6
KF3N50DZ/DS
Revision No : 0
Fig12. Gate Charge
V
GS
Fast
Recovery
Diode
0.8 V
DSS
I
D
1.0 mA
V
GS
Fig13. Single Pulsed Avalanche Energy
50V
10 V
I
D
V
DS
BV
DSS
Q
gs
EAS= LI
Q
gd
1
2
AS
2
BV
BV
DSS
Q
DSS
- V
g
DD
Q
L
I
AS
25Ω
10 V
Fig14. Resistive Load Switching
0.5 V
DSS
25 Ω
10V
I
(t)
V
DS
V
GS
V
DD
D
VDS(t)
Time
t
p
V
DS
90%
R
L
10%
V
GS
t
V
DS
V
GS
t
d(on)
t
r
on
t
d(off)
t
f
t
off
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KF3N50DZ/DS
Revision No : 0
Fig15. Source - Drain Diode Reverse Recovery and dv /dt
0.5 V
DSS
I
F
10V
DUT
driver
V
GS
V
DS
I
S
I
SD
(DUT)
V
(DUT)
DS
Body Diode Forword Current
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
Body Diode Forword Voltage drop
di/dt
V
DD
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