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SEMICONDUCTOR
TECHNICAL DATA
KF3N40W
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
Revision No : 0
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for LED Lighting and
switching mode power supplies.
FEATURES
·V
DSS(Min.)
= 400V, ID= 2A
·
Drain-Source ON Resistance : R
DS(ON)
=3.4 Ω(max) @V
GS
=10V
·
Qg(typ.) =4.4nC
MAXIMUM RATING (Tc=25℃)
* : Drain current limited by maximum junction temperature.
** : Surface Mounted on FR4 Board 2 Inch×2 Inch×1mm.
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DSS
400 V
Gate-Source Voltage
V
GSS
±30
V
Drain Current
@T
C
=25℃
I
D
2*
A
@T
C
=100℃
1.2*
Pulsed (Note1)
I
DP
6*
Single Pulsed Avalanche Energy
(Note 2)
E
AS
52
mJ
Repetitive Avalanche Energy
(Note 1)
E
AR
0.2
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt 4.5
V/ns
Drain Power
Dissipation
T
A
=25℃
P
D
2** W
Derate above25℃
0.02
W/℃
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Characteristics
Thermal Resistance, Junction-to-Case
R
thJC
10.0
℃/W
Thermal Resistance, Junction-toAmbient
R
thJA
62.5**
℃/W
PIN CONNECTION
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KF3N40W
Revision No : 0
ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250μA, V
GS
=0V
400 - - V
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
jID
=250μA, Referenced to 25℃
- 0.4 -
V/℃
Drain Cut-off Current
I
DSS
VDS=400V, VGS=0V,
- - 10
μA
Gate Threshold Voltage
V
th
VDS=VGS, I
D
=250μA
2.5 - 4.5 V
Gate Leakage Current
I
GSS
V
GS
=±30V, V
DS
=0V
- -
±100
nA
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=1A
- 2.8 3.4
Ω
Dynamic
Total Gate Charge
Q
g
VDS=320V, ID=2.2A
V
GS
=10V (Note4,5)
- 4.4 5.8
nCGate-Source Charge
Q
gs
- 1.0 -
Gate-Drain Charge
Q
gd
- 2.0 -
Turn-on Delay time
t
d(on)
VDD=200V, ID=2.2A
R
G
=25Ω (Note4,5)
V
GS
=10V
- 10 -
ns
Turn-on Rise time
t
r
- 11 -
Turn-off Delay time
t
d(off)
- 20 -
Turn-off Fall time
t
f
- 17 -
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1.0MHz
- 163 211
pFOutput Capacitance
C
oss
- 26 -
Reverse Transfer Capacitance
C
rss
- 2.5 -
Source-Drain Diode Ratings
Continuous Source Current
I
S
VGS<V
th
- - 2
A
Pulsed Source Current
I
SP
- - 8
Diode Forward Voltage
V
SD
IS=2A, VGS=0V
- - 1.4 V
Reverse Recovery Time
t
rr
IS=2.2A, VGS=0V,
dIs/dt=100A/μ
s
- 240 - ns
Reverse Recovery Charge
Q
rr
- 0.65 -
μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 23mH, I
S
=2A, VDD=50V, R
G
= 25Ω, Starting Tj= 25℃.
Note 3) I
S
≤2A, dI/dt≤200A/㎲, VDD≤BV
DSS
, Starting T
j
= 25℃.
Note 4) Pulse Test : Pulse width ≤
300㎲, Duty Cycle ≤ 2%.
Note 5) Essentially independent of operating temperature.
Marking
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