Datasheet kf2n60p-f Datasheet

2011. 4. 29 1/2

SEMICONDUCTOR

TECHNICAL DATA

KF2N60P/F

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 0

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for electronic ballast and

switching mode power supplies.

FEATURES

·V

DSS

= 600V, ID= 2A

·

Drain-Source ON Resistance : R

DS(ON)

=4.4Ω(Max) @V

GS

= 10V

·

Qg(typ) = 6.0nC

MAXIMUM RATING (Ta=25℃)

* : Drain current limited by maximum junction temperature.

CHARACTERISTIC SYMBOL

RATING

UNIT

KF2N60P KF2N60F

Drain-Source Voltage

V

DSS

600 V

Gate-Source Voltage

V

GSS

±30

V

Drain Current

@T

C

=25℃

I

D

2 2*

A

@T

C

=100℃

1.3 1.3*

Pulsed (Note1)

I

DP

4 4*

Single Pulsed Avalanche Energy
(Note 2)

E

AS

60

mJ

Repetitive Avalanche Energy
(Note 1)

E

AR

2.3

mJ

Peak Diode Recovery dv/dt
(Note 3)

dv/dt 4.5

V/ns

Drain Power
Dissipation

Tc=25℃

P

D

50 28.4 W

Derate above 25℃

0.4 0.23

W/℃

Maximum Junction Temperature

T

j

150

℃

Storage Temperature Range

T

stg

-55～150

℃

Thermal Characteristics

Thermal Resistance, Junction-to-Case

R

thJC

2.5 4.4

℃/W

Thermal Resistance, Junction-to­Ambient

R

thJA

62.5 62.5

℃/W

G

D

S

PIN CONNECTION

KF2N60P

KF2N60F

(KF2N60P, KF2N60F)

A

E

I

K

M

D

NN

123

E

K

L

D

NN

123

Q

* Single Gauge Lead Frame

L

A

M

O

F

G

B

Q

J

1. GATE

2. DRAIN

3. SOURCE

TO-220AB

F

O

B

G

J

H

1. GATE

2. DRAIN

3. SOURCE

C

DIM MILLIMETERS

A
B
C
D
E
F

P

G
H

I
J

K

L

H

M
N
O

P

Q

C

DIM

R

15.95 MAX

1.3+0.1/-0.05

0.5+0.1/-0.05

13.08 0.3

2.54 0.2

MILLIMETERS

10.16 0.2

A

15.87 0.2

B

C

D

E

F

12.57 0.2

G

H

13.0 0.5

J

K

1.47 MAX

L

1.47 MAX

M

N

O

Q

R

_

9.9 0.2

+

_
+

0.8 0.1
_

3.6 0.2

+

_
+

2.8 0.1

3.7

1.5
_

+

1.46
_

+

1.4 0.1
_

+

1.27 0.1
_

+

_
+

4.5 0.2

_
+

2.4 0.2

_

9.2 0.2

+

_

+
_

+

_

2.54 0.2

+

_

0.8 0.1

+

_

3.18 0.1

+

_

3.3 0.1

+

_

+

_

0.5 0.1

+
_

+

_

3.23 0.1

+

_

2.54 0.2

+
_

6.68 0.2

+
_

+

4.7 0.2

_

2.76 0.2

+

TO-220IS (1)

2011. 4. 29 2/7

KF2N60P/F

Revision No : 0

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage

BV

DSS

I

D

=250㎂ , V

GS

=0V

600 - - V

Breakdown Voltage Temperature Coefficient

ΔBV

DSS

/ΔT

jID

=250㎂, Referenced to 25℃

- 0.61 -

V/℃

Drain Cut-off Current

I

DSS

VDS=600V, VGS=0V,

- - 10

㎂

Gate Threshold Voltage

V

th

VDS=VGS, I

D

=250㎂

2.5 - 4.5 V

Gate Leakage Current

I

GSS

V

GS

=±30V, V

DS

=0V

- -

±100

nA

Drain-Source ON Resistance

R

DS(ON)

VGS=10V, ID=1.0A

- 3.7 4.4

Ω

Dynamic

Total Gate Charge

Q

g

VDS=480V, ID=2A

V

GS

=10V (Note4,5)

- 6.0 -

nCGate-Source Charge

Q

gs

- 1.0 -

Gate-Drain Charge

Q

gd

- 2.8 -

Turn-on Delay time

t

d(on)

VDD=300V

I

D

=2A

R

G

=25Ω (Note4,5)

- 10 -

ns

Turn-on Rise time

t

r

- 20 -

Turn-off Delay time

t

d(off)

- 25 -

Turn-off Fall time

t

f

- 20 -

Input Capacitance

C

iss

VDS=25V, VGS=0V, f=1.0MHz

- 270 -

pF

Output Capacitance

C

oss

- 35 -

Reverse Transfer Capacitance

C

rss

- 3.9 -

Source-Drain Diode Ratings

Continuous Source Current

I

S

VGS<V

th

- - 2
A

Pulsed Source Current

I

SP

- - 8

Diode Forward Voltage

V

SD

IS=2A, VGS=0V

- - 1.4 V

Reverse Recovery Time

t

rr

IS=2A, VGS=0V,

dIs/dt=100A/㎲

- 290 - ns

Reverse Recovery Charge

Q

rr

- 0.9 -

μC

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 2) L=28mH, I

S

=2A, VDD=50V, R

G

=25Ω, Starting Tj=25℃.

Note 3) I

S

≤2A, dI/dt≤100A/㎲, VDD≤BV

DSS

, Starting T

j

=25℃.

Note 4) Pulse Test : Pulse width ≤

300㎲, Duty Cycle≤2%.

Note 5) Essentially independent of operating temperature.

Marking

1

KF2N60

001

P

1

KF2N60

001

F

2

2

1

PRODUCT NAME

2

LOT NO

2011. 4. 29 3/7

KF2N60P/F

Revision No : 0

1

10

(A)

0

D

10

-1

10

Drain Current I

-2

10

0.1 10

Drain - Source Voltage VDS (V)

Fig3. BV

DSS

1.2

VGS = 0V

= 250

I

DS

1.1

1.0

Fig1. ID - V

DS

VGS=10V

VGS=7V

VGS=5V

(A)

D

1

10

0

10

Drain Current I

-1

1100

- T

DSS

j

10

12.0

10.0

(Ω)

DS(ON)

8.0

6.0

TC=100

Fig2. ID - V

C

GS

25

C

684102

Gate - Source Voltage VGS (V)

Fig4. R

DS(ON)

VGS=6V

- I

D

VGS=10V

0.9

0.8

Normalized Breakdown Voltage BV

-100 -50

050

Junction Temperature Tj ( )

(A)

S

Fig5. IS - V

2

10

1

10

TC=100

C

0

10

SD

25

C

Reverse Drain Current I

-1

10

0.2 0.4 0.8 1.0 1.20.6 1.4 1.6 1.8

C

100

150

4.0

2.0

On - Resistance R

0

02.01.0 3.01.50.5 2.5

Drain Current I

Fig6. R

3.0

2.5

2.0

1.5

1.0

0.5

Normalized On Resistance

0.0

=10V

V

GS

= 1A

I

DS

DS(ON)

0 50-100 -50 100 150

(A)

D

- T

j

Source - Drain Voltage V

SD

(V)

Junction Temperature Tj ( )

C

2011. 4. 29 4/7

KF2N60P/F

Revision No : 0

Fig 7. C - V

DS

1000

100

10

Capacitance (pF)

1

05 15 25 3510 20 30 40

Drain - Source Voltage VDS (V)

Fig9. Safe Operation Area

1

10

Operation in this
area is limited by R

(A)

0

10

D

-1

10

Drain Current I

-2

10

10

Tc= 25
Tj = 150
Single pulse

0

C

C

DS(ON)

1

10

10

Drain - Source Voltage V

(KF2N60P)

2

(V)

DS

C

C

C

iss

oss

rss

10µs

100µs

1ms

10ms

DC

(V)

GS

Fig8. Qg- V

12

ID=2A

10

8

6

GS

V

= 480V

DS

4

2

Gate - Source Voltage V

0

1

0

2

Gate - Charge

546

Qg (nC)

783

Fig10. Safe Operation Area

2

10

DS

(KF2N60F)

100µs

(V)

10µs

1ms

10ms

DC

3

10

1

10

Operation in this
area is limited by R

(A)

0

D

10

-1

10

Drain Current I

3

10

-2

10

Tc= 25
Tj = 150
Single pulse

0

10

C

C

10

DS(ON)

1

Drain - Source Voltage V

Fig11. ID - T

j

3.5

3.0

2.5

(A)

D

2.0

1.5

1.0

Drain Current I

0.5

0

0

Junction Temperature Tj ( )

75 15012550 10025

C

2011. 4. 29 5/7

KF2N60P/F

Revision No : 0

Fig12. Transient Thermal Response Curve

1

10

0

Duty=0.5

10

0.2

0.1

0.05

-1

10

.02

0

0.01

Transient Thermal Resistance

Single Pulse

-2

10

-5

10

-4

10

P

DM

- Duty Factor, D= t1/t

- R

10

-3

-2

10

-1

10

TIME (sec)

Fig13. Transient Thermal Response Curve

thJC

(KF2N60P)

t

1

T

j(max)

=

P

0

10

t

2

2

- T

c

D

1

10

1

10

Duty=0.5

0

10

0.2

0.1

5

0.0

0.02

-1

10

0.01

Transient Thermal Resistance

Single Pulse

-2

10

-5

10

-4

10

10

-3

-2

10

TIME (sec)

P

DM

- Duty Factor, D= t1/t

- R

-1

10

thJC

(KF2N60F)

t

1

T

j(max)

=

P

0

10

t

2

2

- T

c

D

1

10

2011. 4. 29 6/7

KF2N60P/F

Revision No : 0

Fig14. Gate Charge

V

GS

Fast
Recovery
Diode

0.8 V

DSS

I

D

1.0 mA

V

GS

Fig15. Single Pulsed Avalanche Energy

50V

10 V

I

D

V

DS

BV

DSS

Q

gs

EAS= LI

Q

gd

1

2

AS

2

BV

BV

DSS

Q

DSS

- V

g

DD

Q

L

I

AS

25Ω

10 V

Fig16. Resistive Load Switching

0.5 V

DSS

25 Ω

10V

I

(t)

V

DS

V

GS

V

DD

D

VDS(t)

Time

t

p

V

DS

90%

R

L

10%

V

GS

t

t

r

V

DS

V

GS

d(on)

t

on

t

d(off)

t

f

t

off

2011. 4. 29 7/7

KF2N60P/F

Revision No : 0

Fig17. Source - Drain Diode Reverse Recovery and dv /dt

0.5 V

DSS

I

F

10V

DUT

driver

V

GS

V

DS

I

S

I

SD

(DUT)

V

(DUT)

DS

Body Diode Forword Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

SD

Body Diode Forword Voltage drop

di/dt

V

DD