Page 1
2008. 10. 2 1/6
SEMICONDUCTOR
TECHNICAL DATA
KF13N60N
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
Revision No : 1
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for switching mode
power supplies.
FEATURES
V
DSS(Min.)
= 600V, ID= 13A
Drain-Source ON Resistance :
R
DS(ON)
=0.56(Max.) @VGS=10V
Qg(typ.) =36nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DSS
600 V
Gate-Source Voltage
V
GSS
30
V
Drain Current
@TC=25
I
D
13
A
Pulsed (Note1)
I
DP
32
Single Pulsed Avalanche Energy (Note 2)
E
AS
870
mJ
Repetitive Avalanche Energy (Note 1)
E
AR
22.5
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt 4.5
V/ns
Drain Power
Dissipation
Tc=25
P
D
215 W
Derate above25
1.72
W/
Maximum Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case
R
thJC
0.58
/W
Thermal Resistance, Junction-to-Ambient
R
thJA
40
/W
Marking
H
D
E
d
A
N
O
PP
1
Q
F
J
C
I
G
L
2
3
1. Gate
2. Drain
3. Source
B
K
MILLIMETERS
DIM
A
B
R
C
D
d
E
F
G
H
M
K
L
M
N
T
O
P
Q
R
T
19.90 0.20
13.90 0.20
I
12.76 0.20
J
23.40 0.20
1.5+0.15-0.05
0.60+0.15-0.05
_
+
15.60 0.20
_
+
4.80 0.20
_
+
_
2.00 0.20
+
_
+
1.00 0.20
_
+
3.00 0.20
_
+
3.80 0.20
_
+
3.50 0.20
_
+
_
+
_
+
_
+
16.50 0.30
_
+
1.40 0.20
_
13.60 0.20
+
_
+
9.60 0.20
_
+
5.45 0.30
_
3.20 0.10
+
_
+
18.70 0.20
D
TO-3P(N)-E
1
KF13N60
N
801
2
G
S
1
PRODUCT NAME
2
LOT NO
Page 2
2008. 10. 2 2/6
KF13N60N
Revision No : 1
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
ID=250 A, VGS=0V
600 - - V
Breakdown Voltage Temperature Coefficient
BV
DSS
/ TjID=250 A, Referenced to 25
- 0.63 -
V/
Drain Cut-off Current
I
DSS
VDS=600V, VGS=0V,
- - 10
A
Gate Threshold Voltage
V
th
VDS=VGS, ID=250 A
2.0 - 4.0 V
Gate Leakage Current
I
GSS
VGS= 30V, VDS=0V
- -
100
nA
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=6.5A
- 0.47 0.56
Dynamic
Total Gate Charge
Q
g
VDS=480V, ID=13A
V
GS
=10V (Note4,5)
- 36 nCGate-Source Charge
Q
gs
- 8.5 -
Gate-Drain Charge
Q
gd
- 13.5 -
Turn-on Delay time
t
d(on)
VDD=300V,
R
G
=25 ,
I
D
=13A
(Note4,5)
- 30 -
ns
Turn-on Rise time
t
r
- 40 -
Turn-off Delay time
t
d(off)
- 115 -
Turn-off Fall time
t
f
- 55 -
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1.0MHz
- 1445 -
pF
Output Capacitance
C
oss
- 185 -
Reverse Transfer Capacitance
C
rss
- 20 -
Source-Drain Diode Ratings
Continuous Source Current
I
S
VGS<V
th
- - 13
A
Pulsed Source Current
I
SP
- - 52
Diode Forward Voltage
V
SD
IS=13A, VGS=0V
- 0.9 1.4 V
Reverse Recovery Time
t
rr
IS=13A, VGS=0V,
dIs/dt=100A/
s
- 370 - ns
Reverse Recovery Charge
Q
rr
- 4.6 -
C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 9.3mH, I
AS
=13A, VDD=50V, RG= 25 , Starting Tj= 25
Note 3) IS13A, dI/dt 200A/ , VDDBV
DSS
, Starting Tj= 25 .
Note 4) Pulse Test : Pulse width
300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Page 3
2008. 10. 2 3/6
KF13N60N
Revision No : 1
Fig1. ID - V
100
(A)
D
10
1
Drain Current I
0.1
0.1 10
DSS
1.2
VGS = 0V
= 250
I
DS
1.1
1.0
0.9
0.8
Normalized Breakdown Voltage BV
-100 -50
1100
Drain - Source Voltage VDS (V)
Fig3. BV
DSS
050
Junction Temperature Tj ( )
- T
DS
VGS=10V
VGS=6V
VGS=5V
j
C
100
150
Fig2. ID - V
VDS=20V
1
10
(A)
D
100
0
10
C
25
Drain Current I
-1
10
Gate - Source Voltage VGS (V)
Fig4. R
1.2
(Ω)
1.0
DS(ON)
0.6
On - Resistance R
0.2
01052015
Drain Current I
C
684102
DS(ON)
GS
- I
D
D
VGS=6V
VGS=10V
(A)
(A)
S
Fig5. IS - V
2
10
1
10
100
SD
3.0
=10V
V
GS
= 6A
I
DS
2.5
25
C
C
2.0
Fig6. R
DS(ON)
- T
j
1.5
0
10
Reverse Drain Current I
-1
10
0.4 0.8 1.0 1.20.6 1.4 1.8
Source - Drain Voltage V
SD
(V)
1.0
0.5
Normalized On Resistance
0.0
Junction Temperature Tj ( )
0 50-100 -50 100 150
C
Page 4
2008. 10. 2 4/6
KF13N60N
Revision No : 1
Fig 7. C - V
4
10
3
10
2
10
Capacitance (pF)
1
10
010203040
DS
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area
2
10
1
10
(A)
D
0
10
10
Drain Current I
10
-1
Tc= 25
Tj = 150
Single pulse
2
0
10
Operation in this
area is limited by R
DS(ON)
C
C
1
10
Drain - Source Voltage V
10
100µs
10ms
100ms
2
(V)
DS
1ms
Fig8. Qg- V
12
ID=13A
10
C
iss
(V)
GS
8
V
DS
V
= 120V
DS
V
= 300V
DS
GS
= 480V
6
C
oss
4
2
C
rss
Gate - Source Voltage V
0
5
0
10
Gate - Charge
252030
Qg (nC)
Fig10. ID - T
35 4015
j
14
12
10
(A)
D
8
DC
6
4
Drain Current I
2
3
10
0
25
50
Junction Temperature Tj ( )
75
100
C
150125
Fig11. Transient Thermal Response Curve
0
10
Duty=0.5
0.2
-1
10
0.1
0.05
0.02
0.01
-2
10
Transient Thermal Resistance
-5
10
S
in
10
gle Pulse
-4
10
-3
10
-2
TIME (sec)
P
DM
- R
- Duty Factor, D= t1/t
-1
10
t
1
= 0.58 C/W Max.
th(j-c)
0
10
t
2
2
1
10
Page 5
2008. 10. 2 5/6
KF13N60N
Revision No : 1
Fig12. Gate Charge
V
GS
Fast
Recovery
Diode
0.8 V
DSS
I
D
1.0 mA
V
GS
Fig13. Single Pulsed Avalanche Energy
50V
10 V
I
D
V
DS
BV
DSS
Q
gs
EAS= LI
Q
gd
1
2
AS
2
BV
BV
DSS
Q
- V
g
DSS
DD
Q
L
I
AS
25Ω
10 V
Fig14. Resistive Load Switching
0.5 V
DSS
25 Ω
10V
I
(t)
V
DS
V
GS
V
DD
D
VDS(t)
Time
t
p
V
DS
90%
R
L
10%
V
GS
t
V
DS
V
GS
t
d(on)
t
r
on
t
d(off)
t
f
t
off
Page 6
2008. 10. 2 6/6
KF13N60N
Revision No : 1
Fig15. Source - Drain Diode Reverse Recovery and dv /dt
0.8 V
DSS
I
F
10V
DUT
driver
V
GS
V
DS
I
S
I
SD
(DUT)
V
(DUT)
DS
Body Diode Forword Current
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
Body Diode Forword Voltage drop
di/dt
V
DD
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