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2012. 9. 27 1/6
SEMICONDUCTOR
TECHNICAL DATA
KF10N68F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
Revision No : 0
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
·V
DSS
=680V, ID=10A
·Drain-Source ON Resistance :
R
DS(ON)
(Max)=0.95Ω @V
GS
=10V
·Qg(typ.)= 24nC
MAXIMUM RATING (Tc=25℃)
* : Drain current limited by maximum junction temperature.
CHARACTERISTIC
SYMBOL
RATING UNIT
Drain-Source Voltage
V
DSS
680 V
Gate-Source Voltage
V
GSS
±30
V
Drain Current
@T
C
=25℃
I
D
10*
A
@T
C
=100℃
6*
Pulsed (Note1)
I
DP
25*
Single Pulsed Avalanche Energy
(Note 2)
E
AS
360
mJ
Repetitive Avalanche Energy
(Note 1)
E
AR
16.5
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt 4.5
V/ns
Drain Power
Dissipation
Tc=25℃
P
D
46 W
Derate above 25℃
0.37
W/℃
Maximum Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Thermal Characteristics
Thermal Resistance, Junction-to-Case
R
thJC
2.7
℃/W
Thermal Resistance,
Junction-to-Ambient
R
thJA
62.5
℃/W
PIN CONNECTION
E
K
L
D
Q
A
M
NN
123
C
F
O
B
G
J
R
H
1. GATE
2. DRAIN
3. SOURCE
TO-220IS (1)
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
Q
R
MILLIMETERS
_
10.16 0.2
+
_
15.87 0.2
+
_
2.54 0.2
+
_
0.8 0.1
+
_
3.18 0.1
+
_
3.3 0.1
+
_
12.57 0.2
+
_
0.5 0.1
+
_
13.0 0.5
+
_
3.23 0.1
+
1.47 MAX
1.47 MAX
_
2.54 0.2
+
_
6.68 0.2
+
_
+
4.7 0.2
_
2.76 0.2
+
D
G
S
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2012. 9. 27 2/6
KF10N68F
Revision No : 0
ELECTRICAL CHARACTERISTICS (Tc=25℃)
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =6.8mH, I
S
=10A, VDD=50V, R
G
=25Ω, Starting Tj=25℃.
Note 3) I
S
≤10A, dI/dt≤200A/㎲, VDD≤BV
DSS
, Starting T
j
=25℃.
Note 4) Pulse Test : Pulse width
≤ 300㎲, Duty Cycle ≤ 2%.
Note 5) Essentially independent of operating temperature.
Marking
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250μA, V
GS
=0V
680 - - V
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
jID
=250μA, Referenced to 25℃
- 0.65 -
V/℃
Drain Cut-off Current
I
DSS
VDS=680V, VGS=0V
- - 10
μA
Gate Threshold Voltage
V
th
VDS=VGS, I
D
=250μA
2.5 - 4.5 V
Gate Leakage Current
I
GSS
V
GS
=±30V, V
DS
=0V
- -
±100
nA
Drain-Source ON Resistance
R
DS(ON)
VGS=10V, ID=5A
- 0.76 0.95
Ω
Dynamic
Total Gate Charge
Q
g
VDS=520V, ID=10A
V
GS
=10V (Note4,5)
- 24 -
nC
Gate-Source Charge
Q
gs
- 6 -
Gate-Drain Charge
Q
gd
- 8 -
Turn-on Delay time
t
d(on)
VDD=325V
I
D
=10A
R
G
=25Ω (Note4,5)
- 32 -
ns
Turn-on Rise time
t
r
- 35 -
Turn-off Delay time
t
d(off)
- 88 -
Turn-off Fall time
t
f
- 30 -
Input Capacitance
C
iss
VDS=25V, VGS=0V, f=1.0MHz
- 1350 -
pF
Output Capacitance
C
oss
- 140 -
Reverse Transfer Capacitance
C
rss
- 13 -
Source-Drain Diode Ratings
Continuous Source Current
I
S
VGS<V
th
- - 10
A
Pulsed Source Current
I
SP
- - 40
Diode Forward Voltage
V
SD
IS=10A, VGS=0V
- - 1.4 V
Reverse Recovery Time
t
rr
IS=10A, VGS=0V,
dIs/dt=100A/
μs
- 400 - ns
Reverse Recovery Charge
Q
rr
- 4.7 -
μC
1
KF10N68
F
2
813
1
PRODUCT NAME
2
LOT NO
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2012. 9. 27 3/6
KF10N68F
Revision No : 0
100
(A)
D
10
1
Drain Current I
0.1
0.1 10
DSS
1.2
VGS = 0V
= 250
I
DS
1.1
1.0
Fig1. ID - V
DS
VGS=10V
VGS=7V
VGS=5V
1100
Drain - Source Voltage VDS (V)
Fig3. BV
DSS
- T
j
VDS=30V
1
10
(A)
D
0
10
Drain Current I
-1
10
3.0
2.5
(Ω)
2.0
DS(ON)
1.5
100
C
Fig2. ID - V
25
C
GS
684102
Gate - Source Voltage VGS (V)
Fig4. R
DS(ON)
- I
D
0.9
0.8
Normalized Breakdown Voltage BV
-100 -50
050
Junction Temperature Tj ( )
(A)
S
Fig5. IS - V
2
10
1
10
0
10
100
SD
C
25
Reverse Drain Current I
-1
10
0.4 0.8 1.0 1.20.6 1.4 1.8
1.0
0.5
On - Resistance R
100
150
0
08426 161210 14
C
3.0
=10V
V
GS
= 5A
I
DS
C
2.5
=6V
V
GS
=10V
V
GS
Drain Current I
Fig6. R
DS(ON)
(A)
D
- T
j
2.0
1.5
1.0
0.5
Normalized On Resistance
0.0
0 50-100 -50 100 150
Source - Drain Voltage V
SD
(V)
Junction Temperature Tj ( )
C
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2012. 9. 27 4/6
KF10N68F
Revision No : 0
)
Fig 7. C - V
4
10
3
10
2
10
Capacitance (pF)
1
10
010203040
DS
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area
1
10
0
10
(A)
D
1
-1
10
Drain Current I
Fig8. Qg- V
12
ID=10A
10
C
iss
(V)
GS
8
V
DS
= 520V
GS
6
C
oss
4
2
C
rss
Gate - Source Voltage V
0
4
0
8
Gate - Charge
201624
Qg (nC)
Fig10. ID - T
28 3212
j
12
(A)
D
I
10
8
6
4
2
10µs
100µs
1ms
10ms
DC
-2
10
0
10
1
10
Drain - Source Voltage V
2
10
(V)
DS
3
10
0
25
0
75
100
125 15050
Tc (Ƅ)
Fig11. Transient Thermal Response Curve
0
10
Duty=0.5
0.2
0
.1
0.05
-1
10
0.02
0.01
Transient Thermal Resistance
-2
10
-5
10
Single Pulse
-4
10
-3
10
-2
10
TIME (sec
P
DM
- Duty Factor, D= t1/t
-1
10
t
1
t
2
2
0
10
1
10
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2012. 9. 27 5/6
KF10N68F
Revision No : 0
Fig12. Gate Charge
V
GS
Fast
Recovery
Diode
0.8 V
DSS
I
D
1.0 mA
V
GS
Fig13. Single Pulsed Avalanche Energy
50V
10 V
I
D
V
DS
BV
DSS
Q
gs
EAS= LI
Q
gd
1
2
AS
2
BV
BV
DSS
Q
- V
g
DSS
DD
Q
L
I
AS
25Ω
10 V
Fig14. Resistive Load Switching
0.5 V
DSS
25 Ω
10V
I
(t)
V
DS
V
GS
V
DD
D
VDS(t)
Time
t
p
V
DS
90%
R
L
10%
V
GS
t
V
DS
V
GS
t
d(on)
t
r
on
t
d(off)
t
f
t
off
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2012. 9. 27 6/6
KF10N68F
Revision No : 0
Fig15. Source - Drain Diode Reverse Recovery and dv /dt
0.5 V
DSS
I
F
10V
DUT
driver
V
GS
V
DS
I
S
I
SD
(DUT)
V
(DUT)
DS
Body Diode Forword Current
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
SD
Body Diode Forword Voltage drop
di/dt
V
DD
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