Datasheet kf10n60p-f Datasheet

2010. 8. 16 1/7

SEMICONDUCTOR

TECHNICAL DATA

KF10N60P/F

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 0

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for active power factor

correction and switching mode power supplies.

FEATURES

·V

DSS

=600V, ID=10A

·

Drain-Source ON Resistance :

R

DS(ON)

(Max)=0.73Ω @V

GS

=10V

·

Qg(typ.)= 29.5nC

MAXIMUM RATING (Tc=25℃)

* : Drain current limited by maximum junction temperature.

CHARACTERISTIC

SYMBOL

RATING

UNIT

KF10N60P KF10N60F

Drain-Source Voltage

V

DSS

600 V

Gate-Source Voltage

V

GSS

±30

V

Drain Current

@T

C

=25℃

I

D

10 10*

A

@T

C

=100℃

6 6*

Pulsed (Note1)

I

DP

25 25*

Single Pulsed Avalanche Energy (Note 2)

E

AS

400

mJ

Repetitive Avalanche Energy (Note 1)

E

AR

16.5

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt 4.5

V/ns

Drain Power Dissipation

Tc=25℃

P

D

178 46 W

Derate above 25℃

1.43 0.37

W/℃

Maximum Junction Temperature

T

j

150

℃

Storage Temperature Range

T

stg

-55～150

℃

Thermal Characteristics

Thermal Resistance, Junction-to-Case

R

thJC

0.7 2.7

℃/W

Thermal Resistance, Junction-to-Ambient

R

thJA

62.5 62.5

℃/W

PIN CONNECTION

KF10N60P

(KF10N60P, KF10N60F)

KF10N60F

E

I

K

D

E

K

L

D

Q

A

M

NN

123

A

M

NN

123

F

G

B

Q

L

J

1. GATE

2. DRAIN

3. SOURCE

TO-220AB

F

O

B

G

J

H

1. GATE

2. DRAIN

3. SOURCE

O

C

DIM MILLIMETERS

P

H

C

R

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

DIM

A

B

C

D

E

F

G

H

J

K

L

M

N

O

Q

R

_

9.9 0.2

+

15.95 MAX

1.3+0.1/-0.05 _

+

0.8 0.1 _

3.6 0.2

+

_

+

2.8 0.1

3.7

0.5+0.1/-0.05

1.5 _

+

13.08 0.3

1.46 _

1.4 0.1

+

_

1.27 0.1

+ _

2.54 0.2

+

_

4.5 0.2

+ _

2.4 0.2

+ _

9.2 0.2

+

MILLIMETERS

_

10.16 0.2

+ _

15.87 0.2

+

_

2.54 0.2

+

_

0.8 0.1

+

_

3.18 0.1

+

_

3.3 0.1

+

_

12.57 0.2

+

_

0.5 0.1

+

_

13.0 0.5

+

_

3.23 0.1

+

1.47 MAX

_

2.54 0.2

+ _

6.68 0.2

+ _

+

4.7 0.2

_

2.76 0.2

+

D

TO-220IS (1)

G

S

2010. 8. 16 2/7

KF10N60P/F

Revision No : 0

ELECTRICAL CHARACTERISTICS (Tc=25℃)

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 2) L =5.5mH, I

S

=10A, VDD=50V, R

G

=25Ω, Starting Tj=25℃.

Note 3) I

S

≤10A, dI/dt≤200A/㎲, VDD≤BV

DSS

, Starting T

j

=25℃.

Note 4) Pulse Test : Pulse width ≤

300㎲, Duty Cycle ≤ 2%.

Note 5) Essentially independent of operating temperature.

Marking

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage

BV

DSS

I

D

=250μA, V

GS

=0V

600 - - V

Breakdown Voltage Temperature Coefficient

ΔBV

DSS

/ΔT

jID

=250μA, Referenced to 25℃

- 0.6 -

V/℃

Drain Cut-off Current

I

DSS

VDS=600V, VGS=0V

- - 10

μA

Gate Threshold Voltage

V

th

VDS=VGS, I

D

=250μA

2.5 - 4.5 V

Gate Leakage Current

I

GSS

V

GS

=±30V, V

DS

=0V

- -

±100

nA

Drain-Source ON Resistance

R

DS(ON)

VGS=10V, ID=5A

- 0.59 0.73

Ω

Dynamic

Total Gate Charge

Q

g

VDS=480V, ID=10A

V

GS

=10V (Note4,5)

- 26 -

nCGate-Source Charge

Q

gs

- 6 -

Gate-Drain Charge

Q

gd

- 10 -

Turn-on Delay time

t

d(on)

VDD=300V

I

D

=10A

R

G

=25Ω (Note4,5)

- 32 -

ns

Turn-on Rise time

t

r

- 35 -

Turn-off Delay time

t

d(off)

- 88 -

Turn-off Fall time

t

f

- 30 -

Input Capacitance

C

iss

VDS=25V, VGS=0V, f=1.0MHz

- 1350 -

pF

Output Capacitance

C

oss

- 140 -

Reverse Transfer Capacitance

C

rss

- 13 -

Source-Drain Diode Ratings

Continuous Source Current

I

S

VGS<V

th

- - 10 A

Pulsed Source Current

I

SP

- - 40

Diode Forward Voltage

V

SD

IS=10A, VGS=0V

- - 1.4 V

Reverse Recovery Time

t

rr

IS=10A, VGS=0V,

dIs/dt=100A/μ

s

- 350 - ns

Reverse Recovery Charge

Q

rr

- 4.2 -

μC

1

KF10N60

801

P

1

KF10N60 F

2

813

1

PRODUCT NAME

2

LOT NO

2010. 8. 16 3/7

KF10N60P/F

Revision No : 0

Fig1. ID - V

100

(A)

D

10

1

Drain Current I

0.1

0.1 10

DSS

1.2

VGS = 0V

= 250

I

DS

1.1

1.0

0.9

0.8

Normalized Breakdown Voltage BV

-100 -50

1100

Drain - Source Voltage VDS (V)

Fig3. BV

DSS

050

Junction Temperature Tj ( )

DS

- T

j

VGS=10V

VGS=7V

VGS=5V

100

C

150

Fig2. ID - V

VDS=30V

1

10

(A)

D

100

C

0

10

25

Drain Current I

-1

10

Gate - Source Voltage VGS (V)

Fig4. R

2.4

2.0

(Ω)

1.6

DS(ON)

1.2

0.8

0.4

On - Resistance R

0

01052015

Drain Current I

C

684102

DS(ON)

GS

- I

D

(A)

D

VGS=6V

VGS=10V

(A)

S

Fig5. IS - V

2

10

1

10

100

SD

3.0

=10V

V

GS

= 5A

I

DS

C

25

C

2.5

2.0

Fig6. R

DS(ON)

- T

j

1.5

0

10

Reverse Drain Current I

-1

10

0.4 0.8 1.0 1.20.6 1.4 1.8

Source - Drain Voltage V

SD

(V)

1.0

0.5

Normalized On Resistance

0.0

Junction Temperature Tj ( )

0 50-100 -50 100 150

C

2010. 8. 16 4/7

KF10N60P/F

Revision No : 0

Fig 7. C - V

4

10

3

10

2

10

Capacitance (pF)

1

10

0 10203040

DS

Drain - Source Voltage VDS (V)

Fig9. Safe Operation Area

2

10

1

10

(A)

D

0

10

-1

10

Drain Current I

2

10

Tc= 25 Tj = 150 Single pulse

0

Operation in this area is limited by R

C

DS(ON)

1

10

Drain - Source Voltage V

(KF10N60P)

2

10

DS

(V)

100µs

1ms

10ms

C

iss

10µs

oss

rss

DC

10

(V)

GS

Fig8. Qg- V

12

ID=10A

10

8

V

DS

V

DS

= 120V

V

DS

= 300V

= 480V

GS

6

4

2

Gate - Source Voltage V

0

5

0

10

Gate - Charge

252030

Qg (nC)

35 4015

Fig10. Safe Operation Area

2

10

1

10

(A)

D

0

10

Operation in this area is limited by R

-1

10

Drain Current I

3

2

10

Tc= 25

C Tj = 150 Single pulse

0

C

DS(ON)

1

10

Drain - Source Voltage V

(KF10N60F)

2

10

DS

(V)

10µs

100µs

1ms

10ms

DC

3

10

Fig11. ID - T

j

14

12

10

(A)

D

8

6

4

Drain Current I

2

0

25

50

Junction Temperature Tj ( )

75

100

C

150125

2010. 8. 16 5/7

KF10N60P/F

Revision No : 0

Fig12. Transient Thermal Response Curve

0

10

Duty=0.5

0.2

0.1

-1

10

0.05

0.02

0.01

Transient Thermal Resistance

-2

10

-5

10

1

10

Single Pulse

-4

10

P

- Duty Factor, D= t1/t

-3

10

-2

10

-1

10

TIME (sec)

Fig13. Transient Thermal Response Curve

DM

(KF10N60P)

t

1

t

2

0

10

(KF10N60F)

2

1

10

Duty=0.5

0

10

0.2

0.1

0.05

-1

10

0.02

0.01

Transient Thermal Resistance

-2

10

-5

10

S

ingle Pulse

-4

10

-3

10

-2

10

P

DM

- Duty Factor, D= t1/t

-1

10

t

1

t

2

0

10

1

10

TIME (sec)

2010. 8. 16 6/7

KF10N60P/F

Revision No : 0

Fig14. Gate Charge

V

GS

Fast Recovery Diode

0.8 V

DSS

I

D

1.0 mA

V

GS

Fig15. Single Pulsed Avalanche Energy

50V

10 V

I

D

V

DS

BV

DSS

Q

gs

EAS= LI

Q

gd

1

2

AS

2

BV

DSS

Q

- V

g

DSS

DD

Q

L

I

AS

25Ω

10 V

Fig16. Resistive Load Switching

0.5 V

DSS

25 Ω

10V

I

(t)

V

DS

V

GS

V

DD

D

VDS(t)

Time

t

p

V

DS

90%

R

L

10%

V

GS

t

V

DS

V

GS

t

d(on)

t

r

on

t

d(off)

t

f

t

off

2010. 8. 16 7/7

KF10N60P/F

Revision No : 0

Fig17. Source - Drain Diode Reverse Recovery and dv /dt

0.5 V

DSS

I

F

10V

DUT

driver

V

GS

V

DS

I

S

I

SD

(DUT)

V

(DUT)

DS

Body Diode Forword Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

SD

Body Diode Forword Voltage drop

di/dt

V

DD