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CATV TUNING.
SEMICONDUCTOR
TECHNICAL DATA
KDV262
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
FEATURES
ᴌHigh Capacitance Ratio : C2V/C25V=12.5(Typ.)
ᴌLow Series Resistance : r
=0.6ή(Typ.)
S
ᴌExcellent C-V Characteristics, and Small Tracking Error.
ᴌUseful for Small Size Tuner.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Reverse Voltage
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
V
R
V
RM
T
j
T
stg
34 V
36 (RL=10kή)
125
-55ᴕ125
ᴱ
ᴱ
I
J
G
H
F
C
I
MILLIMETERS
_
2.50 0.1
+
_
+
1.25 0.05
_
+
0.90 0.05
0.30+0.06/-0.04
_
+
1.70 0.05
MIN 0.17
_
+
0.126 0.03
0~0.1
1.0 MAX
_
+
0.15 0.05
_
+
0.4 0.05
2 +4/-2
4~6
L
B
1
A
CATHODE MARK
2
M
V
1. ANODE
2. CATHODE
E
D
M
K
DIM
J
A
B
C
D
E
F
G
H
K
L
M
USC
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Voltage
Reverse Current
Capacitance
Capacitance
Capacitance Ratio
Series Resistance
Note : Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.)
C(Min.)
⏊0.02
(VR=2~25V)
V
I
C
C
25V
C2V/C
C
25V/C28V
r
R
R
2V
25V
S
IR=1ỌA
VR=28V
VR=2V, f=1MHz
VR=25V, f=1MHz
VR=5V, f=470MHz
34 - - V
- - 10 nA
33 35.5 38 pF
2.6 2.85 3.0 pF
12.0 12.5 -
1.03 - -
- 0.6 0.8
Marking
-
ή
Type Name
QU
2001. 6. 11 1/2
Revision No : 1
Page 2
KDV262
500
V
100
50
CAPACITANCE C (pF)
10
0
REVERSE VOLTAGE V (V)
1.0
0.8
s
C - V
R
V
f=1MHz
Ta=25 C
10 20 30
R
r - V
R
s
f=470MHz
Ta=25 C
1000p
100p
R
Ta=75
Ta=50 C
10p
1p
REVERSE CURRENT I (A)
0.1p
0
8
REVERSE VOLTAGE V (V)
1.0
0.8
s
I - V
RR
C
Ta=25 C
16 24 32
R
r - f
s
V =5V
R
Ta=25 C
0.6
0.4
0.2
SERIES RESISTANCE r (Ω)
0
1 3 10 30
REVERSE VOLTAGE V (V)
5
R
0.6
0.4
0.2
SERIES RESISTANCE r (Ω)
0
50 500
300100
FREQUENCY f (MHz)
C - Ta
3
2
1
0
-1
25V
f=1MHz
V =2V
R
10V
20V
-2
CAPACITANCE CHANGE RATIO C (%)
-40
-20 0 20 40 60 80
AMBIENT TEMPERATURE Ta ( C)
2/22001. 6. 11 Revision No : 1
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