Page 1
2003. 7. 8 1/2
SEMICONDUCTOR
TECHNICAL DATA
KDR728E
SCHOTTKY BARRIER TYPE DIODE
Revision No : 2
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Low Forward Voltage : V
F(2)
=0.42(Typ.)
Small Package : ESC.
MAXIMUM RATING (Ta=25 )
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4
4mm.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage
V
RM
30 V
Reverse Voltage
V
R
30 V
Maximum (Peak) Forward Current
I
FM
150 mA
Average Forward Current
I
O
30 mA
Surge Current (10ms)
I
FSM
200 mA
Power Dissipation
P
D
150
*
mW
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55 125
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
V
F(1)
IF=1mA
- 0.3 0.4
V
V
F(2)
IF=30mA
- 0.42 0.55
Reverse Current
I
R
VR=30V
- - 300
A
Total Capacitance
C
T
VR=1V, f=1MHz
- 6.5 - pF
C
1
A
CATHODE MARK
2
1. ANODE
2. CATHODE
B
D
E
F
DIM MILLIMETERS
A
B
C
D
E
_
1.60 0.10
+
_
1.20 0.10
+
_
0.80 0.10
+
_
0.30 0.05
+
_
+
0.60 0.10
_
+
0.13 0.05F
ESC
Marking
Type Name
TU
Page 2
2003. 7. 8 2/2
KDR728E
Revision No : 2
I - V
2
10
Ta=25 C
10
F
1
-1
10
-2
10
-3
10
FORWARD CURRENT I (mA)
-4
10
0
0.1
0.2 0.3 0.50.4
FORWARD VOLTAGE V (V)
C - V
2
10
T
f=1MHz
Ta=25 C
FF
F
TR
REVERSE CURRENT I (ยตA)
I - V
RR
10
R
Ta=25 C
1
-1
10
-2
10
05
10 2015 3025
REVERSE VOLTAGE V (V)
R
10
TERMINAL CAPACITANCE C (pF)
1
05
10 15 20 25 30
REVERSE VOLTAGE V (V)
R
Loading...