Page 1
2003. 2. 24 1/2
SEMICONDUCTOR
TECHNICAL DATA
KDR411
SCHOTTKY BARRIER TYPE DIODE
Revision No : 3
LOW POWER RECTIFICATION
FOR SWITCHING POWER SUPPLY.
FEATURES
Small Surface Mounting Type. (USM)
Low Forward Voltage : VFmax=0.5V
High Reliability
CONSTRUCTION
Silicon epitaxial planar.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Peak Reverse Voltage
V
RM
40 V
DC Reverse Voltage
V
R
20 V
Average Forward Current
I
O
0.5 A
Peak Forward Surge Current
I
FSM
3 A
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-40 +125
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage
VF (1) IF=10mA
- - 0.3 V
VF (2) IF=500mA
- - 0.5 V
Reverse Current
I
R
VR=10V
- - 30
A
Total Capacitance
C
T
VR=10V, f=1MHz
- 20 - pF
E
B
MM
DIM
A
2
J
A
G
1
C
L
N
K
1. NC
2. ANODE
3. CATHODE
D
B
H
C
D
E
G
H
J
K
L
M 0.42 0.10
N 0.10 MIN
3
N
USM
MILLIMETERS
_
+
2.00 0.20
_
+
1.25 0.15
_
+
0.90 0.10
0.3+0.10/-0.05
_
+
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
_
+
3
1
2
Marking
U 3
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2003. 2. 24 2/2
KDR411
Revision No : 3
1
F
100m
10m
1m
FORWARD CURRENT I (A)
100µ
1K
T
100
Ta=125 C
Ta=75 C
Ta=25 C
0.10
FORWARD VOLTAGE V (V)
I - V
F F
Ta=-25 C
C - V
T
R
F
0.50.40.30.2
Ta=25 C
f=1MHz
0.6
10m
R
1m
100µ
10µ
REVERSE CURRENT I (A)
1µ
5101520
0
REVERSE VOLTAGE V (V)
I - V
RR
Ta=125 C
Ta=75 C
a=25 C
T
25
R
30 35
10
TOTAL CAPACITANCE C (pF)
1
0
10
REVERSE VOLTAGE V (V)
20 30 40
R
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