Page 1
SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
KDR322
SILICON EPITAXIAL
SCHOTTKY BARRIER TYPE DIODE
FEATURES
ᴌLow Forward Voltage : VF=0.54V (Typ.).
ᴌLow Reverse Current : I
=5ỌA (Max.).
R
ᴌSmall Package : USM.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
E
B
MM
DIM
MILLIMETERS
A
3
N
USM
D
B
C
D
E
G
H
J
K
L
H
M
N
2
J
A
G
1
C
L
N
K
V
RM
V
R
I
FM
I
O
P
D
T
j
T
stg
45 V
40 V
300 mA
100 mA
100 mW
125
-55ᴕ125
1. N.C
2. ANODE
3. CATHODE
ᴱ
ᴱ
_
+
2.00 0.20
_
+
1.25 0.15
_
+
0.90 0.10
0.3+0.10/-0.05
_
+
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
_
+
0.42 0.10
0.10 MIN
3
1
2
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
VF (1) IF=1mA
Forward Voltage
Reverse Current
Total Capacitance
VF (2) IF=10mA
VF (3) IF=100mA
I
C
Marking
U L
- 0.28 -
- 0.36 -
- 0.54 0.60
R
T
VR=40V
VR=0, f=1MHz
- - 5
- 18 25 pF
V
ỌA
2001. 12. 4 1/2
Revision No : 2
Page 2
KDR322
300m
100m
F
30m
10m
3m
Ta=25 C
1m
0.3m
FORWARD CURRENT I (A)
0.1m
m
100
m
30
m
10
m
3
1
300n
100n
30n
10n
0.3n
0.1n
m
3n
1n
R
REVERSE CURRENT I (A)
Ta=100 C
0
0
0.2 0.4 0.6 0.8 1.0
FORWARD VOLTAGE V (V)
Ta=100 C
Ta=75 C
Ta=50 C
Ta=25 C
Ta=0 C
Ta=-25 C
10 20 30 40 50
REVERSE VOLTAGE V (V)
FF
C
Ta=-25
I - V
RR
C - VI - V
TR
100
50
T
30
10
5
3
TOTAL CAPACITANCE C (pF)
1
4 8 12 16 20 24 28 32 36
0
F
R
REVERSE VOLTAGE V (V)
R
2001. 12. 4 2/2
Revision No : 2
Loading...