Datasheet KBU1006G, KBU1010G, KBU1008G, KBU1000G, KBU1004G Datasheet (WTE)

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Page 1
WTE
POWER SEMICONDUCTORS
KBU1000G – KBU1010G
10A GLASS PASSIVATED BRIDGE RECTIFIER
Features
!
Glass Passivated Die Construction A
!
Low Forward Voltage Drop B C
!
High Current Capability D
!
!
High Surge Current Capability K L
!
Ideal for Printed Circuit Boards -
J G
Mechanical Data
!
Case: Molded Plastic H
!
Terminals: Plated Leads Solderable per M
MIL-STD-202, Method 208
!
Polarity: As Marked on Body
!
Weight: 8.0 grams (approx.)
!
Mounting Position: Any
!
Marking: Type Number
~ ~ +
N
E
KBU
Dim Min Max
A
22.70 23.70
B
3.80 4.10
C
4.20 4.70
D
1.70 2.20
E
10.30 11.30
G
4.50 6.80
H
4.60 5.60
J
25.40
K
L M N
P All Dimensions in mm
19.30
16.80 17.80
6.60 7.10
4.70 5.20
1.20 1.30
P
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic Symbol
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage V Average Rectified Output Current @TA = 50°C I
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load (JEDEC Method)
Forward Voltage (per element) @IF = 5.0A V Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @T Operating and Storage Temperature Range T
= 125°C
A
V V
RRM
RWM
V
R(RMS)
FSM
I
I
j, TSTG
KBU
1000G
R
O
FM
R
@TA=25°C unless otherwise specified
KBU
1001G
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
KBU
1002G
KBU
1004G
-55 to +150 °C
KBU
1006G
10 A
200 A
1.1 V
5.0 500
KBU
1008G
KBU
1010G
Unit
µA
KBU1000G – KBU1010G 1 of 3 © 2002 Won-Top Electronics
Page 2
12
10
100
(AV)
I , AVERAGE FWD CURRENT (A)
8
6
Mounted on4X4inch
Copper PC Board
12.7mm lead length
4
2
0
0 50 100 150
T,AMBIENT TEMPERATURE(°C)
A
Fig. 1 Forward Current Derating Curve
T = 150°C
j
8.3 ms Single Half-Sine Wave
300
200
F
I , INSTANTANEOUS FWD CURRENT (A)
10
1.0
T = 25°C
j
Pulse width = 300 µs
0.1
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig.2TypicalForwardCharacteristics, per element
400
100
T = 25°C
j
f=1MHz
FSM
I , PEAK FORWARD SURGE CURRENT (A)
100
0
1 10 100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
10
1.0
0.1
T = 100°C
j
J
C , CAPACITANCE (pF)
10
T = 25°C
j
0.1
1.0
V , REVERSE VOLTAGE (V)
R
10 100
Fig. 4 Typical Junction Capacitance per element
R
I , INSTANTANEOUS REVERSE CURRENT (µA)
0.01 0 20 40 60 80 100 120 140
PERCENT OF PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
KBU1000G – KBU1010G 2 of 3 © 2002 Won-Top Electronics
Page 3
ORDERING INFORMA TION
Product No. Package Type Shipping Quantity
KBU1000G SIL Bridge 400 Units/Box KBU1001G SIL Bridge 400 Units/Box KBU1002G SIL Bridge 400 Units/Box KBU1004G SIL Bridge 400 Units/Box KBU1006G SIL Bridge 400 Units/Box KBU1008G SIL Bridge 400 Units/Box KBU1010G SIL Bridge 400 Units/Box
Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department.
Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice.
WARNING
support devices or systems without the express written approval.
Won-Top Electronics Co., Ltd.
No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan
Phone: Fax: Email: Internet:
KBU1000G – KBU1010G 3 of 3 © 2002 Won-Top Electronics
: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life
886-7-822-5408 or 886-7-822-5410
886-7-822-5417
sales@wontop.com
http://www.wontop.com
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