
KBP200 - KBP210
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load. 
For capacitive load, derate current by 20%.
PRV : 50 - 1000 Volts 
Io : 2.0 Amperes
SILICON BRIDGE RECTIFIERS
KBP
0.71 (18.0)
 * High case dielectric strength 
 * High surge current capability 
 * High reliability 
 * Low reverse current 
 * Low forward voltage drop 
 * Ideal for printed circuit board
0.825 (20.95)
0.500 (12.7)
0.105 (2.66)
AC AC
0.035 (0.89)
0.028 (0.71)
0.16 (4.00)
0.14 (3.55)
0.276 (7.01 )
0.236 (5.99)
 * Case : Molded plastic 
 * Epoxy : UL94V-O rate flame retardant 
 * Terminals : Plated lead solderable per 
        MIL-STD-202, Method 208 guaranteed 
 * Polarity : Polarity symbols marked on case
Dimensions in inches and ( millimeter )
 * Mounting position : Any 
 * Weight : 3.4 grams
RATING
  Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts 
  Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts 
  Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts 
  Maximum Average Forward Current Tc = 50°C 
  Peak Forward Surge Current, Single half sine wave 
  Superimposed on rated load (JEDEC Method) IFSM 60 Amps. 
  Rating for fusing  ( t < 8.3 ms. ) 
  Maximum Forward Voltage per Diode at IF = 1.0 Amp. VF 1.0 Volts 
  Maximum DC Reverse Current     Ta = 25 °C 
  at Rated DC Blocking Voltage      Ta = 100 °C 
  Typical Junction Capacitance per Diode (Note 1) 
  Typical Thermal Resistance (Note 2) 
  Operating Junction Temperature Range TJ  - 50 to + 125 
  Storage Temperature Range TSTG  - 50 to + 125
SYMBOL
IF(AV) 2.0 Amps.
I2t
IR 10
IR(H) 1.0 mA
CJ
RθJA
KBP 
200
KBP 
201
KBP 
202
KBP 
204
10 A2S
24 pF 
30
KBP 
206
KBP 
208
KBP 
210
UNIT
µA
°C/W
°C 
°C
Notes :
        1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts. 
        2 ) Thermal resistance from Junction to Ambient with units mounted on a 0.47" X 0.47" ( 12mm X 12mm ) Cu. Pads.
UPDATE : MARCH 6, 2000

  RATING AND CHARACTERISTIC CURVES ( KBP200 - KBP210 )
FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK 
      RECTIFIED CURRENT       FORWARD SURGE CURRENT
2.0
1.5
1.0
CURRENT, AMPERES
0.5 
P.C. Board Mounted with
AVERAGE FORWARD OUTPUT 
0.47" X 0.47" ( 12mm X 12mm )
0
    0 25 50 75 100 125 150 175      1 2 4 6 10 20 40 60 100
Cu. pads.
CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz
inductive load. 
80
70
60
50
40
AMPERES
30
20
8.3 ms SINGLE HALF SINE WAVE
10
PEAK FORWARD SURGE CURRENT, 
0
JEDEC METHOD
TJ = 55 °C
FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS
     PER DIODE
100 10
Pulse Width = 300 µs
1 % Duty Cycle
10
1.0 0.1
TJ = 25 °C
0.1
FORWARD CURRENT, AMPERES
1.0
0.01
REVERSE CURRENT, MICROAMPERES
TJ = 100 °C
TJ = 25 °C
80
100 1400 20 40 60 120
PERCENT OF RATED REVERSE 
VOLTAGE, (%)
0.01
   0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS