Datasheet KA1M0880B Datasheet (Fairchild Semiconductor)

©2001 Fairchild Semiconductor Corporation

www.fairchildsemi.com

Rev.1.0.2

Features

• Precision fixed operating frequency

• KA1L0880B(50KHz),KA1M0880B(67KHz)

• Pulse by pulse over current limiting

• Over load protection

• Over voltage protection (Min. 23V)

• Internal thermal shutdown function

• Under voltage lock out

• Internal high voltage sense FET

• Latch up mode

•Soft start

Description

The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of high
voltage power SenseFET and current mode PWM controller IC.
PWM controller features integrated fixed oscillator, under
voltage lock out, leading edge blanking, optimized gate turn-on/
turn-off driver , thermal shut down protection, over voltage
protection, temperature compensated precision current sources
for loop compensation and fault protection circuit. compared to
discrete MOSFET and controller or R

CC

switching converter
solution, a Fairchild Power Switch(FPS) can reduce total
component count, design size, weight and at the same time
increase & efficiency, productivity, and system reliability. It has
a basic platform well suited for cost effective design in either a
flyback converter or a forward converter.

TO-3P-5L

1. DRAIN 2. GND 3. V

CC

4. FB 5. S/S

1

Internal Block Diagram

#3 V

CC

32V

5

µ

A

5V

2.5R
1R

1mA

0.1V

+

−

OVER VOLTAGE S/D

+

−

7.5V

25V

Thermal S/D

S
R

Q

Power on reset

+

−

L.E.B

S
R

Q

OSC

5V

Vref

Internal

bias

Good

logic

SFET

#1 DRAIN

#2 GND

#4 FB

#5 Soft Start

9V

KA1L0880B/KA1M0880B

Fairchild Power S witch(FPS)

KA1L0880B/KA1M0880B

2

Absolute Maximum Ratings

Notes:

1. Tj=25°C to 150°C

2. Repetitive rating: Pulse width limited by maximum junction temperature

3. L=24mH, V

DD

=50V, RG=25Ω, starting Tj=25°C

4. L=13µH, starting Tj=25°C

Parameter Symbol Value Unit

Maximum Drain voltage

(1)

V

D,Max

800 V

Drain-Gate voltage (R

GS

=1MΩ)V

DGR

800 V

Gate-source (GND) voltage V

GS

±30 V

Drain current pulsed

(2)

I

DM

32.0 A

DC

Single pulsed avalanche energy

(3)

E

AS

810 mJ

Avalanche current

(4)

I

AS

15 A

Continuous drain current (T

C

=25°C) I

D

8.0 A

DC

Continuous drain current (TC=100°C) I

D

5.6 A

DC

Maximum Supply voltage V

CC,MAX

30 V

Input voltage range V

FB

−0.3 to V

SD

V

Total power dissipation

P

D

190 W

Derating 1.54 W/°C

Operating ambient temperature T

A

−25 to +85 °C

Storage temperature T

STG

−55 to +150 °C

KA1L0880B/KA1M0880B

3

Electrical Characteristics (SFET part)

(Ta=25°C unless otherwise specified)

Note:

Pulse test: P ulse width ≤ 300µS, duty cycle ≤ 2%

Parameter Symbol Condition Min. Typ. Max. Unit

Drain source breakdown voltage BV

DSS

VGS=0V, ID=50µA 800 - - V

Zero gate voltage drain current I

DSS

VDS=Max., Rating,
V

GS

=0V

--50µA

V

DS

=0.8Max., Rating,

V

GS

=0V, TC=125°C

- - 200 µA

Static drain source on resistance

(note)

R

DS(ON)VGS

=10V, ID=5.0A - 1.2 1.5 Ω

Forward transconductance

(note)

gfs VDS=15V, ID=5.0A 1.5 2.5 - S

Input capacitance Ciss

V

GS

=0V, VDS=25V,

f=1MHz

- 2460 ­pFOutput capacitance Coss - 210 -

Reverse transfer capacitance Crss - 64 ­Turn on delay time t

d(on)

VDD=0.5BV

DSS

, ID=8.0A
(MOSFET switching
time are essentially
independent of
operating temperature)

--90
nS

Rise time tr - 95 200
Turn off delay time t

d(off)

- 150 450

Fall time tf - 60 150
Total gate charge

(gate-source+gate-drain)

Qg

V

GS

=10V, ID=8.0A,

V

DS

=0.5BV

DSS

(MOSFET
switching time are
essentially independent of
operating temperature)

- - 150
nC

Gate source charge Qgs - 20 ­Gate drain (Miller) charge Qgd - 70 -

S

1

R

--- -=

KA1L0880B/KA1M0880B

4

Electrical Characteristics (CONTROL part)

(Ta=25°C unless otherwise specified)

Note:

1. These parameters, although guaranteed, are not 100% tested in production

2. These parameters, although guaranteed, are tested in EDS (wafer test) process

Parameter Symbol Condition Min. Typ. Max. Unit

UVLO SECTION

Start threshold voltage V

START

- 14 15 16 V

Stop threshold voltage V

STOP

After turn on 9 10 11 V

OSCILLATOR SECTION

Initial accuracy F

OSC

KA1L0880B 45 50 55

kHz

KA1M0880B 61 67 73

Frequency change with temperature

(2)

∆F/∆T −25°C ≤ Ta ≤ +85°C-±5 ±10 %

Maximum duty cycle Dmax 74 77 80 %

FEEDBACK SECTION

Feedback source current I

FB

Ta=25°C, 0V ≤ Vfb ≤ 3V 0.7 0.9 1.1 mA

Shutdown Feedback voltage V

SD

- 6.9 7.5 8.1 V

Shutdown delay current Idelay Ta=25°C, 5V ≤ Vfb ≤ V

SD

4.0 5.0 6.0 µA

SOFT START SECTION

Soft Start Voltage V

SS

V

FB

=2V 4.7 5.0 5.3 V

Soft Start Current I

SS

Sync & S/S=GND 0.8 1.0 1.2 mA

REFERENCE SECTION

Output voltage

(1)

Vref Ta=25°C 4.80 5.00 5.20 V

Temperature Stability

(1)(2)

Vref/∆T −25°C ≤ Ta ≤ +85°C-0.30.6mV/°C

CURRENT LIMIT (SELF-PROTECTION) SECTION

Peak Current Limit I

OVER

Max. inductor current 4.40 5.00 5.60 A

PROTECTION SECTION

Thermal shutdown temperature (Tj)

(1)

T

SD

- 140 160 - °C

Over voltage protection voltage V

OVP

- 23 25 28 V

TOTAL DEVICE SECTION

Start Up current I

START

VCC=14V 0.1 0.3 0.45 mA

Operating supply current
(control part only)

I

OP

Ta=25°C 6 12 18 mA

V

CC

zener voltage V

Z

ICC=20mA 30 32.5 35 V

KA1L0880B/KA1M0880B

5

Typical Performance Characteristics

(These characteristic graphs are normalized at Ta=25°C)

Fig. 1 O p era t ing F r equenc y

0.8

0.85

0.9

0.95

1

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

Fosc

Fig.2 Feedback Source Cur r ent

0.8

0.85

0.9

0.95

1

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

Ifb

Fig.3 Operating Curr ent

0.8

0.85

0.9

0.95

1

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

Iop

Fig.4 Max Inductor Curr en t

0.8

0.85

0.9

0.95

1

1.05

1.1

-25 0 25 50 75 100 125 150

Ipeak

Fig.5 Start up Current

0.5

0.7

0.9

1.1

1.3

1.5

-25 0 25 50 75 100 125 150

Istart

Fig.6 Star t Threshold Volta ge

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vstart

Temperature [°C] Temperature [°C]

Temperature [°

C

] Temperature [°C]

Temperature [°

C

]Temperature [°C]

Figure 1. Operating Frequency Figure 2. Feedback Source Current

Figure 3. Operating Supply Current Figure 4. Peak Current Limit

Figure 5. Start up Current Figure 6. Start Threshold Voltage

I

over

I

ST

V

th(H)

I

OP

KA1L0880B/KA1M0880B

6

Typi ca l Performance Characteristics

(Continued)

(These characteristic graphs are normalized at Ta=25°C)

Fig.7 Stop Threshold Voltage

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vstop

F i g .8 Maxi mu m D uty Cyc l e

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Dmax

Fig.9 V c c Zener Voltage

0.8

0.85

0.9

0.95

1

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

Vz

Fig.10 Shut do wn Feedback Voltag e

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vsd

Fig.11 Shut do wn Delay Cur r ent

0.8

0.85

0.9

0.95

1

1.05

1.1

1.15

1.2

-25 0 25 50 75 100 125 150

Idelay

Fig.12 Over Voltage Prot ec tion

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vovp

Temperature [°C] Temperature [°C]

Temperature [°

C

] Temperature [°C]

Temperature [°

C

]Temperature [°C]

Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle

Figure 9. V

CC

Zener Voltage Figure 10. Shutdown Feedback Voltage

Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection

V

th(L)

KA1L0880B/KA1M0880B

7

Typi ca l Performance Characteristics

(Continued)

(These characteristic grahps are normalized at Ta=25°C)

Figure 13. Soft Start Voltage Figure 14. Static Drain Source on Resistance

Fig.13 S oft Start Voltage

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vss

Fig.14 Drain So ur ce Turn-o n

Resistance

0

0.5

1

1.5

2

2.5

-25 0 25 50 75 100 125 150

Rdson

Temperature [°C] Tempera ture [°C]

(

)

KA1L0880B/KA1M0880B

8

Package Dimensions

TO-3P-5L

KA1L0880B/KA1M0880B

9

Package Dimensions

TO-3P-5L (Forming)

KA1L0880B/KA1M0880B

10/17/01 0.0m 001

Stock#DSxxxxxxxx

 2001 Fairchild Semiconductor Corporation

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OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein :

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which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.

2. A critical component in any component of a life support
device or sys tem whose failure to perform can be
reasonably expec ted to cause the failur e of the life support
device or system, or to affect its safety or effec tiveness.

www.fairchildsemi.com

DISCLAIMER

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PRODUCTS HEREI N TO IMPROVE RELIABILITY, FUNCTION OR DES IGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RI GHTS OF OTHERS.

Ordering Information

TU : Non Forming Type
YDTU : Forming type

Product Number Package Rating Fosc

KA1L0880B-TU TO-3P-5L

800V, 8A 50kHz

KA1L0880B-YDTU TO-3P-5L(Forming)
KA1M0880B-TU TO-3P-5L

800V, 8A 67kHz

KA1M0880B-YDTU TO-3P-5L(Forming)