Datasheet KA1M0680RB, KA1H0680B Datasheet (Fairchild Semiconductor)

KA1M0680B/KA1M0680RB/
KA1H0680B/KA1H0680RFB

Fairchild Power Switch(FPS)

www.fairchildsemi.com

Features

• Precision fixed operating frequency

• KA1M0680B,KA1M0680RB (67K H z)

• KA1H0680B,KA1H0680RFB (100KHz)

• Pulse by pulse over current limiting

• Over load protection

• Over voltage protection (Min. 23V)

• Internal thermal shutdown function

• Under voltage lock out

• Internal high voltage sense FET

• Latch up mode (KA1M0680B,KA1H0680B)

• Auto restart (KA1M0680RB,KA1H0680RFB)

• Soft start

Description

The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of high
voltage power SenseFET and current mode PWM controller IC.
PWM controller features integrated fixed oscillator, under
voltage lock out, leading edge blanking, optimized gate turn-on/
turn-off driver , thermal shut down protection, over voltage
protection, temperature compensated precision current sources
for loop compensation and fault protection circuit. compared to
discrete MOSFET and controller or R
solution, a Fairchild Power Switch(FPS) can reduce total
component count, design size, weight and at the same time
increase & efficiency, productivity, and system reliability. It has
a basic platform well suited for cost effective design in either a
flyback converter or a forward converter.

TO-3P-5L

1

1.DRAIN 2.GND 3.V

TO-3PF-5L

1

4.FB 5.Soft Start

CC

switching converter

CC

Internal Block Diagram

#3 V

CC

32V

#5 Soft Start

5V

#4 FB

©2001 Fairchild Semiconductor Corporation

µ

5

7.5V

25V

A

2.5R

1mA

1R

9V

+

−

+

−

Thermal S/D

OVER VOLTAGE S/D

OSC

−

+

5V

Vref

L.E.B

0.1V

Good

logic

S
R

Internal

bias

Q

S
R

Power on reset

#1 DRAIN

SFET

Q

#2 GND

Rev.1.0.2

KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB

Absolute Maximum Ratings

Parameter Symbol Value Unit

Maximum Drain voltage
Drain Gate voltage (R

(1)

=1MΩ)V

GS

Gate source (GND) voltage V

(4)

(2)

(3)

=25°C) I

C

Drain current pulsed
Single pulsed avalanche energy
Avalanche current
Continuous drain current (T
Continuous drain current (TC=100°C) I
Maximum Supply voltage V
Input voltage range V

Total power dissipation
Operating ambient temperature T

Storage temperature T

Notes:

1. Tj=25°C to 150°C

2. Repetitive rating: Pulse width limited by maximum junction temperature

3. L=24mH, V

4. L=13µH, starting Tj=25°C

=50V, RG=25Ω, starting Tj=25°C

DD

V

D,MAX

DGR

GS

I

DM

E

AS

I

AS

D
D

CC,MAX

FB

P

D

800 V
800 V
±30 V

24.0 A
455 mJ

16 A

6.0 A

4.0 A
30 V

−0.3 to V

SD

150 W

Derating 1.21 W/°C

A

STG

−25 to +85 °C

−55 to +150 °C

DC

DC
DC

V

2

KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB

Electrical Characteristics (SFET part)

(Ta=25°C unless otherwise specified)

Parameter Symbol Condition Min. Typ. Max. Unit

Drain source breakdown voltage BV

Zero gate voltage drain current I

Static drain source on resistance
Forward transconductance

(note)

(note)

DSS

DSS

R

DS(ON)VGS

gfs VDS=15V, ID=4.0A 1.5 2.5 - S

Input capacitance Ciss

Reverse transfer capacitance Crss - 42 ­Turn on delay time t

d(on)

Rise time tr - 150 ­Turn off delay time t

d(off)

Fall time tf - 130 ­Total gate charge

(gate-source+gate-drain)

Qg

Gate source charge Qgs - 16 ­Gate drain (Miller) charge Qgd - 27 -

VGS=0V, ID=50µA 800 - - V
VDS=Max., Rating,

V

=0V

GS

=0.8Max., Rating,

V

DS

V

=0V, TC=125°C

GS

--50µA

- - 200 µA

=10V, ID=4.0A - 1.6 2.0 Ω

- 1600 -

=0V, VDS=25V,

V

GS

f=1MHz

VDD=0.5BV

DSS

, ID=6.0A

-60­(MOSFET switchin g
time are essentially
independent of

- 300 ­operating temperature)
V

=10V, ID=6.0A,

V

GS
DS

=0.5BV

(MOSFET

DSS

-70­switching time are

essentially independent of
operating temperature)

pFOutput capacitance Coss - 140 -

nS

nC

Note:
Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%

1

S

--- -=

R

3

KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB

Electrical Characteristics (CONTROL part)

(Ta=25°C unless otherwise specified)

Parameter Symbol Condition Min. Typ. Max. Unit

UVLO SECTION

Start threshold voltage V
Stop threshold voltage V

START

STOP

After turn on 9 10 11 V

OSCILLATOR SECTION

KA1M0680B 61 67 73

Initial accuracy F

OSC

KA1M0680RB 61 67 73
KA1H0680B 90 100 110
KA1H0680RFB 90 100 110

(2)

Frequency change with temperature

∆F/∆T −25°C ≤ Ta ≤ +85°C-±5 ±10 %

KA1M0680B 74 77 80

Maximum duty cycle Dmax

KA1M0680RB 74 77 80
KA1H0680B 64 67 70
KA1H0680RFB 64 67 70

FEEDBACK SECTION

Feedback source current I
Shutdown Feedback voltage V

FB

SD

Ta=25°C, 0V ≤ Vfb ≤ 3V 0.7 0.9 1.1 mA

Shutdown delay current Idelay Ta=25°C, 5V ≤ Vfb ≤ V

SOFT START SECTION

Soft Start Voltage V
Soft Start Current I

SS

SS

V

=2V 4.7 5.0 5.3 V

FB

Sync & S/S=GND 0.8 1.0 1.2 mA

REFERENCE SECTION

Output voltage
Temperature Stability

(1)

(1)(2)

Vref Ta=25°C 4.805.005.20 V

Vref/∆T −25°C ≤ Ta ≤ +85°C-0.30.6mV/°C

CURRENT LIMIT (SELF-PROTECTION) SECTION

Peak Current Limit I

OVER

Max. inductor current 3.52 4.00 4.48 A

PROTECTION SECTION

Thermal shutdown temperature (Tj)

(1)

Over voltage protection voltage V

T

SD

OVP

TOTAL DEVICE SECTION

Start Up current I
Operating supply current

(control part only)
V

zener voltage V

CC

START

I

OP

Z

VCC=14V 0.1 0.3 0.45 mA
Ta=25°C 6 12 18 mA
ICC=20mA 30 32.5 35 V

- 141516 V

-6.97.58.1V

- 140 160 - °C

- 232528 V

4.0 5.0 6.0 µA

SD

kHz

%

Note:

1. These parameters, although guaranteed, are not 100% tested in production

2. These parameters, although guaranteed, are tested in EDS (wafer test) process

4

Typical Performance Characteristics

(These characteristic graphs are normalized at Ta=25°C)

KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB

Fig.1 O per at ing F reque nc y

1.2

1.15

1.1

1.05

Fosc

1

0.95

0.9

0.85

0.8

-25 0 25 50 75 100 125 150

Temperature [°C] Temperature [°C]

Figure 1. Operating Frequency Figure 2. Feedback Source Current

Fig.3 Operat ing Curr ent

1

-25 0 25 50 75 100 125 150

Temperature [

I

Iop

OP

1.2

1.15

1.1

1.05

0.95

0.9

0.85

0.8

Fig.2 Feedback Sourc e Cur r ent

1.2

1.15

1.1

1.05

Ifb

1

0.95

0.9

0.85

0.8

-25 0 25 50 75 100 125 150

1.1

1.05

I

over

Ipeak

0.95

0.9

0.85

0.8

] Temperature [

C

°

Fig.4 Max Induc tor Curr en t

1

-25 0 25 50 75 100 125 150

]

C

°

Figure 3. Operating Supply Current Figure 4. Peak Current Limit

Fig.5 Start up Current

-25 0 25 50 75 100 125 150

I

ST

Istart

1.5

1.3

1.1

0.9

0.7

0.5

V

th(H)

Vstart

Fig.6 Sta r t Threshold Voltage

1.15

1.1

1.05
1

0.95

0.9

0.85

-25 0 25 50 75 100 125 150

Temperature [°

Figure 5. Start up Current Figure 6. Start Threshold Voltage

]Temperature [°C]

C

5

KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB

Typical Perfo rmance Characteristics

(Continued)

(These characteristic graphs are normalized at Ta=25°C)

Fig.7 Sto p Threshold Voltage

1.15

1.1

1.05

V

th(L)

1

Vstop

0.95

0.9

0.85

-25 0 25 50 75 100 125 150

Temperature [°C] Temperature [°C]

Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle

1.2

1.15

1.1

1.05

Vz

0.95

0.9

0.85

0.8

Fig.9 V cc Zener Voltage

1

-25 0 25 50 75 100 125 150

Temperature [°

] Temperature [°C]

C

F i g .8 Ma xi mu m Du ty Cyc l e

1.15

1.1

1.05
1

Dmax

0.95

0.9

0.85

-25 0 25 50 75 100 125 150

Fig.10 Shutdown Feedback Voltage

1.15

1.1

1.05

Vsd

1

0.95

0.9

0.85

-25 0 25 50 75 100 125 150

Idelay

Figure 9. V

Fig.11 Shutdown Delay Current

1.2

1.15

1.1

1.05
1

0.95

0.9

0.85

0.8

-25 0 25 50 75 100 125 150

Zener Voltage Figure 10. Shutdown Feedback Voltage

CC

Fig.12 Over Voltage Prot ec tion

1.15

1.1

1.05

Vovp

1

0.95

0.9

0.85

-25 0 25 50 75 100 125 150

Temperature [°

]Temperature [°C]

C

Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection

6

KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB

Typical Performance Characteristics

(These characteristic grahps are normalized at Ta=25°C)

1.15

1.1

1.05

Vss

0.95

0.9

0.85

Fig.13 S oft Start V olt age

1

-25 0 25 50 75 100 125 150

Temperature [°C] Temperature [°C]

Figure 13. Soft Start Voltage Figure 14. Static Drain-Source on Resistance

(Continued)

Rdson

Fig.14 Drain So urce Tur n-on

Resistance

2.5
2

1.5

(

)

1

0.5
0

-25 0 25 50 75 100 125 150

7

KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB

Package Dimensions

TO-3P-5L

8

KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB

Package Dimensions

TO-3P-5L (Forming)

(Continued)

9

KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB

Package Dimensions

(Continued)

TO-3PF-5L

10

KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB

Package Dimensions

(Continued)

TO-3PF-5L(Forming)

11

KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB

Ordering Information

Product Number Package Rating Fosc Latch/Auto

KA1M0680B-TU TO-3P-5L
KA1M0680B-YDTU TO-3P-5L(Forming)

800V, 6A 67kHz Latch up mode

KA1M0680RB-TU TO-3P-5L
KA1M0680RB-YDTU TO-3P-5L(Forming)

KA1H0680B-TU TO-3P-5L
KA1H0680B-YDTU TO-3P-5L(Forming)

KA1H0680RFB-TU TO-3PF-5L
KA1H0680RFB-YDTU TO-3PF-5L(Forming)

TU : Non Forming Type
YDTU : Forming Type

800V, 6A 67kHz Auto restart mode

800V, 6A 100kHz Latch up mode

800V, 6A 100kHz Auto restart mode

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURT HER NOTICE TO ANY
PRODUCTS HEREI N TO IMPROVE RELIABILITY, FUNCTIO N OR DESIGN. FAIRCH IL D DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER IT S PATENT RIGHTS, NOR THE RIGHTS OF OTHE RS.

LIFE SUPPORT POL I CY

FAIRCHILD’S PR ODUCTS ARE NOT AUTH ORIZED FOR USE AS C RITICAL COMPONENT S IN LIFE SUPPORT DE VICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein :

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.

www.fairchildsemi.com

2. A critical component in any component of a life support
device or sy stem whose fai lure to perform can be
reasonably expec ted to cause the failur e of the life support
device or system, or to affect its safety or effec t iv ene ss .

10/17/01 0.0m 001

 2001 Fairchild Semiconductor Corporation

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