Datasheet KA1M0565R, KA1H0565R Datasheet (Fairchild Semiconductor)

KA1M0565R/KA1H0565R

Fairchild Power Switch(FPS)

www.fairchildsemi.com

Features

• Precision fixed operating frequency

• KA1M0565R (67KHz),KA1H0565R (100KHz)

• Pulse by pulse over current limiting

• Over load protection

• Over voltage protection (Min. 23V)

• Internal thermal shutdown function

• Under voltage lock out

• Internal high voltage sense FET

•Auto restart

Description

The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of
high voltage power SenseFET and current mode PWM
controller IC. PWM controller features integrated fixed
oscillator, under voltage lock out, leading edge blanking,
optimized gate turn-on/turn-off driver, thermal shut down
protection, over voltage protection, temperature compensated
precision current sources for loop compensation and fault
protection circuit. compared to discrete MOSFET and
controller or R
Power Switch(FPS) can reduce total component count,
design size, weight and at the same time increase &
efficiency, productivity, and system reliability. It has a basic
platform well suited for cost effective design in either a
flyback converter or a forward converter.

TO-220F-4L

1

1. GND 2. DRAIN 3. V

switching converter solution, a Fairchild

CC

4. FB

CC

Internal Block Diagram

#3 V

CC

32V

A

µ

5

#4 FB

7.5V

25V

©2001 Fairchild Semiconductor Corporation

9V

1mA

2.5R
1R

+

−

+

−

Thermal S/D

OVER VOLTAGE S/D

OSC

−

+

5V

Vref

L.E.B

0.1V

Good

logic

S
R

Internal

bias

Q

S
R

Power on reset

#2 DRAIN

SFET

Q

#1 GND

Rev.1.0.2

KA1M0565R/KA1H0565R

Absolute Maximum Ratings

Parameter Symbol Value Unit

Maximum Drain voltage
Drain Gate voltage (R

(1)

=1MΩ)V

GS

Gate-source (GND) voltage V
Drain current pulsed
Single pulsed avalanche energy
Continuous drain current (T

(2)

(3)

=25°C) I

C

Continuous drain current (TC=100°C) I
Maximum Supply voltage V
Input voltage range V

Total power dissipation
Operating ambient temperature T

Storage temperature T

Notes:

1. Tj=25°C to 150°C

2. Repetitive rating: Pulse width limited by maximum junction temperature

3. L=30mH, V

=50V, RG= 27Ω, starting Tj=25°C

DD

V

D,MAX

DGR

GS

I

DM

E

AS

D
D

CC,MAX

FB

P

D

650 V
650 V
±30 V

20 A

230 mJ

5.0 A

3.5 A
30 V

−0.3 to V

SD

140 W

Derating 1.11 W/°C

A

STG

−25 to +85 °C

−55 to +150 °C

DC

DC
DC

V

2

KA1M0565R/KA1H0565R

Electrical Characteristics (SFET part)

(Ta=25°C unless otherwise specified)

Parameter Symbol Condition Min. Typ. Max. Unit

Drain source breakdown voltage BV

Zero gate voltage drain current I

Static drain source on resistance
Forward transconductance

(note)

(note)

DSS

DSS

R

DS(ON)

gfs VDS=50V, ID=2.5A 2.5 - - S

Input capacitance Ciss

Reverse transfer capacitance Crss - 38.8 ­Turn on delay time t

d(on)

Rise time tr - - 150
Turn off delay time t

d(off)

Fall time tf - - 130
Total gate charge

(gate-source+gate-drain)

Qg

Gate source charge Qgs - 10.3 ­Gate drain (Miller) charge Qgd - 22.3 -

VGS=0V, ID=50µA 650 - - V
VDS=Max., Rating,

V

=0V

GS

=0.8Max., Rating,

V

DS

V

=0V, TC=125°C

GS

--50µA

- - 200 µA

VGS=10V, ID=2.5A - 1.76 2.2

- 1457 -

=0V, VDS=25V,

V

GS

f=1MHz

VDD=0.5BV

DSS

, ID=5.0A

--60
(MOSFET switching
time are essentially
independent of

- - 300
operating temperature)
V

=10V, ID=5.0A,

V

GS
DS

=0.5BV

(MOSFET

DSS

--56
switching time are

essentially independent of
operating temperature)

Ω

pFOutput capacitance Coss - 130 -

nS

nC

Note:

Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%

1

S

--- -=

R

3

KA1M0565R/KA1H0565R

Electrical Characteristics (CONTROL part)

(Ta=25°C unless otherwise specified)

Parameter Symbol Condition Min. Typ. Max. Unit
UVLO SECTION

Start threshold voltage V
Stop threshold voltage V

START

STOP

OSCILLATOR SECTION

Initial accuracy F
Frequency change with temperature

(2)

OSC

∆F/∆T −25°C ≤ Ta ≤ +85°C-±5 ±10 %

Maximum duty cycle Dmax

FEEDBACK SECTION

Feedback source current I
Shutdown Feedback voltage V
Shutdown delay current I

FB

SD

delay

REFERENCE SECTION

Output voltage

(1)

Temperature Stability

(1)(2)

Vref Ta=25°C 4.80 5.00 5.20 V

Vref/∆T −25°C ≤ Ta ≤ +85°C-0.30.6mV/°C

CURRENT LIMIT (SELF-PROTECTION) SECTION

Peak Current Limit I

OVER

PROTECTION SECTION

Thermal shutdown temperature (Tj)

(1)

Over voltage protection voltage V

T

SD

OVP

TOTAL DEVICE SECTION

Start Up current I
Operating supply current

(control part only)
V

zener voltage V

CC

START

I

OP

Z

After turn on 9 10 11 V

KA1M0565R 61 67 73
KA1H0565R 90 100 110

KA1M0565R 74 77 80
KA1H0565R 64 67 70

Ta=25°C, 0V ≤ Vfb ≤ 3V 0.7 0.9 1.1 mA

Ta=25°C, 5V ≤ Vfb ≤ V

Max. inductor current 3.08 3.5 3.92 A

VCC=14V 0.1 0.3 0.4 mA
Ta=25°C 6 12 18 mA
ICC=20mA 30 32.5 35 V

- 14 15 16 V

- 6.9 7.5 8.1 V

4.0 5.0 6.0 µA

SD

- 140 160 - °C

- 23 25 28 V

kHz

%

Note:

1. These parameters, although guaranteed, are not 100% tested in production

2. These parameters, although guaranteed, are tested in EDS (wafer test) process

4

Typical Perfo rma n ce Cha ra cte ristic s

(These characteristic graphs are normalized at Ta=25°C)

KA1M0565R/KA1H0565R

Fig.1 Opera t ing F r equenc y

1.2

1.15

1.1

1.05

Fosc

1

0.95

0.9

0.85

0.8

-25 0 25 50 75 100 125 150

Temperature [°C] Temperature [°C]

Figure 1. Operating Frequency Figure 2. Feedback Source Current

Fig.3 Operating Current

1

-25 0 25 50 75 100 125 150

Temperature [

l

OP

Iop

1.2

1.15

1.1

1.05

0.95

0.9

0.85

0.8

Fig.2 Feedback Sourc e Cur r ent

1.2

1.15

1.1

1.05

Ifb

1

I

FB

0.95

0.9

0.85

0.8

-25 0 25 50 75 100 125 150

1.1

1.05

I

over

Ipeak

0.95

0.9

0.85

0.8

] Temperature [

C

°

Fig.4 Max Induct o r C ur rent

1

-25 0 25 50 75 100 125 150

]

C

°

Figure 3. Operating Supply Current Figure 4. Peak Current Limit

I

ST

Istart

1.5

1.3

1.1

0.9

0.7

0.5

Fig.5 Start up Current

-25 0 25 50 75 100 125 150

V

th(H)

Vstart

Fig.6 St ar t Thr eshold Volta ge

1.15

1.1

1.05
1

0.95

0.9

0.85

-25 0 25 50 75 100 125 150

Temperature [°

Figure 5. Start up Current Figure 6. Start Threshold Voltage

]Temperature [°C]

C

5

KA1M0565R/KA1H0565R

Typical Perfo rma nce Characteristics

(These characteristic graphs are normalized at Ta=25°C)

Fig.7 St op Threshold Voltage

1.15

1.1

1.05

V

th(L)

1

Vstop

0.95

0.9

0.85

-25 0 25 50 75 100 125 150

Temperature [°C] Temperature [°C]

Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle

1.2

1.15

1.1

1.05

Vz

0.95

0.9

0.85

0.8

Fig.9 Vcc Ze ner Voltage

1

-25 0 25 50 75 100 125 150

Temperature [°

] Temperature [°C]

C

(Continued)

Dmax

Vsd

F i g .8 Ma xi mu m D u ty Cyc l e

1.15

1.1

1.05
1

0.95

0.9

0.85

-25 0 25 50 75 100 125 150

Fig.10 Shutdown Feedback Voltage

1.15

1.1

1.05
1

0.95

0.9

0.85

-25 0 25 50 75 100 125 150

Idelay

Figure 9. V

Fig.11 Shutdown Delay Current

1.2

1.15

1.1

1.05
1

0.95

0.9

0.85

0.8

-25 0 25 50 75 100 125 150

Zener Voltage Figure 10. Shutdown Feedback Voltage

CC

Fig.12 Over Voltage Protection

1.15

1.1

1.05

Vovp

1

0.95

0.9

0.85

-25 0 25 50 75 100 125 150

Temperature [°

]Temperature [°C]

C

Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection

6

KA1M0565R/KA1H0565R

Typical Perfo rma n ce Cha ra cte ristic s

(Continued)

(These characteristic grahps are normalized at Ta=25°C)

Fig.14 Drain Source Turn-on

Resistance

2.5

2

1.5

Rdson

)

(

1

0.5

0

-25 0 25 50 75 100 125 150

Temperature [

]

C

°

Figure 13. Static Drain-Source on Resistance

7

KA1M0565R/KA1H0565R

Package Dimensions

TO-220F-4L

8

KA1M0565R/KA1H0565R

Package Dimensions

(Continued)

TO-220F-4L(Forming)

9

KA1M0565R/KA1H0565R

Ordering Information

Product Number Package Rating Fosc

KA1M0565R-TU TO-220F-4L
KA1M0565R-YDTU TO-220F-4L(Forming)

650V, 5A 67kHz

KA1H0565R-TU TO-220F-4L
KA1H0565R-YDTU TO-220F-4L(Forming)

TU : Non Forming Type
YDTU : Forming Type

650V, 5A 100kHz

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURT HER NOTICE TO ANY
PRODUCTS HEREI N TO IMPROVE RELIABILITY, FUNCTIO N OR DESIGN. FAIRCH IL D DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER IT S PATENT RIGHTS, NOR THE RIGHTS OF OTHE RS.

LIFE SUPPORT POL I CY

FAIRCHILD’S PR ODUCTS ARE NOT AUTH ORIZED FOR USE AS C RITICAL COMPONENT S IN LIFE SUPPORT DE VICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein :

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.

www.fairchildsemi.com

2. A critical component in any component of a life support
device or sy stem whose fai lure to perform can be
reasonably expec ted to cause the failur e of the life support
device or system, or to affect its safety or effec t iv ene ss .

11/23/01 0.0m 001

 2001 Fairchild Semiconductor Corporation

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