Datasheet KA1H0280RB, KA1M0280RB Datasheet (Fairchild Semiconductor)

KA1M0280RB/KA1H0280RB

Fairchi ld Pow er Sw itch( FP S)

www.fairchildsemi.com

Features

• Precision Fixed Operating Frequency

• KA1M0280RB (67kHz) , KA1H0280RB (100kHz)

• Pulse by Pulse Over Current Limiting

• Over Load Protection

• Over Voltage Protection (Min. 23V)

• Internal Thermal Shutdown Function

• Under Voltage Lockout

• Internal High Voltage Sense FET

•Auto Restart

Description

The

Fairchild Power Switch(FPS)

designed for an off line SMPS with minimal external
components. The

Fairchild Power Switch(FPS)

voltage power SenseFET and current mode PWM controller IC.
PWM controller features integrated fixed oscillator, under
voltage lock out, leading edge blanking, optimized gate turn-on/
turn-off driver , thermal shut down protection, over voltage
protection, temperature compensated precision current sources
for loop compensation and fault protection circuit. compared to
discrete MOSFET and controller or R
solution, a

Fairchild Power Switch(FPS)

component count, design size, weight and at the same time
increase & efficiency, productivity, and system reliability. It has
a basic platform well suited for cost effective design in either a
flyback converter or a forward converter.

TO-220F-4L

1

1. GND 2. DRAIN 3. V

CC

product family is specially

switching converter

CC

can reduce total

4. FB

consist of high

Internal Block Diagram

#3 V

CC

32V

5

µ

A

#4 FB

+

25V

−

+

−

7.5V

©2003 Fairchild Semiconductor Corporation

5V

Vref

OSC

9V

1mA

2.5R
1R

OVER VOLTAGE S/D

−

+

Thermal S/D

L.E.B

0.1V

Good

logic

S
R

Internal

bias

Q

S
R

Power on reset

#2 DRAIN

SFET

Q

#1 GND

Rev.1.0.2

KA1M0280RB/KA1H0280RB

Absolute Maximum Ratings

Parameter Symbol Value Unit

Maximum Drain Voltage
Drain-Gate Voltage (R

(1)

=1MΩ)V

GS

Gate-Source (GND) Voltage V

(4)

(2)

(3)

=25°C) I

C

Drain Current Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Continuous Drain Current (T
Continuous Drain Current (TC=100°C) I
Maximum Supply Voltage V
Input Voltage Range V

Total Power Dissipation
Operating Ambient Temperature T

Storage Temperature T

Notes:

1. T

= 25°C to 150°C

j

2. Repetitive rating: Pulse width limited by maximum junction temperature

3. L = 51mH, V

4. L = 13µH, starting T

= 50V, RG = 25Ω, starting Tj = 25°C

DD

= 25°C

j

V

D,MAX

DGR

GS

I

DM

E

AS

I

AS

D
D

CC,MAX

FB

P

D

800 V
800 V
±30 V

8.0 A
90 mJ

8A

2.0 A

1.3 A
30 V

-0.3 to V

SD

35 W

Darting 0.28 W/°C

A

STG

-25 to +85 °C

-55 to +150 °C

DC

DC
DC

V

2

KA1M0280RB/KA1H0280RB

Electrical Characteristics (SFET part)

(Ta=25°C unless otherwise specified)

Parameter Symbol Condition Min. Typ. Max. Unit

Drain-Source Breakdown Voltage BV

Zero Gate Voltage Drain Current I

Static Drain-Source on Resistance
Forward Transconductance

(Note)

(Note)

DSS

DSS

R

DS(ON)

gfs VDS=50V, ID=1.0A 1.5 2.5 - S

Input Capacitance Ciss

Reverse Transfer Capacitance Crss - 25 ­Turn on Delay Time t

d(on)

Rise Time tr - 28 ­Turn Off Delay Time t

d(off)

Fall Time tf - 24 ­Total Gate Charge

(Gate-Source+Gate-Drain)

Qg

Gate-Source Charge Qgs - 15 ­Gate-Drain (Miller) Charge Qgd - 20 -

VGS=0V, ID=50µA 800 - - V
VDS=Max., Rating,

V

=0V

GS

V

=0.8Max., Rating,

DS

V

=0V, TC=125°C

GS

--50µA

- - 200 µA

VGS=10V, ID=1.0A - 5.6 7.0 Ω

- 250 -

V

=0V, VDS=25V,

GS

f=1MHz

VDD=0.5BV

DSS

, ID=2.0A

-21­(MOSFET switching
time are essentially
independent of

-77­operating temperature)
V

=10V, ID=2.0A,

V

GS
DS

=0.5BV

(MOSFET

DSS

--60
switching time are

essentially independent of
operating temperature)

pFOutput Capacitance Coss - 52 -

nS

nC

Note:

1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%

2.

1

S

--- -=

R

3

KA1M0280RB/KA1H0280RB

Electrical Characteristics (CONTROL part)

(Continued)

(Ta=25°C unless otherwise specified)

Parameter Symbol Condition Min. Typ. Max. Unit
UVLO SECTION

Start Threshold Voltage V
Stop Threshold Voltage V

START

STOP

After turn on 9 10 11 V

- 141516 V

OSCILLATOR SECTION

Initial Accuracy F
Frequency Change With Temperature

(2)

OSC

∆F/∆T-25°C ≤ Ta ≤ +85°C-±5 ±10 %

Maximum Duty Cycle Dmax

KA1M0280RB 61 67 73
KA1H0280RB 90 100 110

KA1M0280RB 74 77 80
KA1H0280RB 64 67 70

FEEDBACK SECTION

Feedback Source Current I
Shutdown Feedback Voltage V

FB

SD

Shutdown Delay Current Idelay Ta=25°C, 5V ≤ Vfb ≤ V

Ta=25°C, 0V ≤ Vfb ≤ 3V 0.7 0.9 1.1 mA

- 6.9 7.5 8.1 V

4.0 5.0 6.0 µA

SD

REFERENCE SECTION

Output Voltage
Temperature Stability

(1)

(1)(2)

Vref Ta=25°C 4.80 5.00 5.20 V

Vref/∆T-25°C ≤ Ta ≤ +85°C-0.30.6mV/°C

CURRENT LIMIT (SELF-PROTECTION) SECTION

Peak Current Limit I

OVER

Max. inductor current 1.05 1.2 1.35 A

PROTECTION SECTION

Thermal Shutdown Temperature (Tj)
Over Voltage Protection Voltage V

(1)

T

OVP

SD

- 140 160 - °C

- 232528 V

TOTAL DEVICE SECTION

Start-Up Current I
Operating Supply Current

(Control Part Only)
V

Zener Voltage V

CC

START

I

OP

Z

VCC=14V 0.1 0.3 0.45 mA
Ta=25°C 6 12 18 mA
ICC=20mA 30 32.5 35 V

kHz

%

Note:

1. These parameters, although guaranteed, are not 100% tested in production

2. These parameters, although guaranteed, are tested in EDS (wafer test) process

4

Typical Performance Characteristics

(These characteristic graphs are normalized at Ta=25°C)

KA1M0280RB/KA1H0280RB

Fig.1 Operating Frequency

1.2

1.15

1.1

1.05

Fosc

1

0.95

0.9

0.85

0.8

-25 0 25 50 75 100 125 150

Temperature [ °C] Temperature [°C]

Figure 1. Operating Frequency Figure 2. Feedback Source Current

Fig.3 Oper ating Current

1.2

1.15

1.1

1.05

I

Iop

OP

1

0.95

0.9

0.85

0.8

-25 0 25 50 75 100 125 150

Temperature [°

Fig.2 Feedbac k S our c e Cur r ent

1.2

1.15

1.1

1.05

Ifb

1

0.95

0.9

0.85

0.8

-25 0 25 50 75 100 125 150

1.1

1.05

I

Ipeak

over

0.95

0.9

0.85

0.8

C

] Temperature [°C]

Fig.4 Max Inductor Current

1

-25 0 25 50 75 100 125 150

Figure 3. Operating Supply Current Figure 4. Peak Current Limit

I

ST

Istart

1.5

1.3

1.1

0.9

0.7

0.5

Fig. 5 S tart up Current

-25 0 25 50 75 100 125 150

V

th(H)

Vstart

Fig. 6 S tart Threshold Volt a ge

1.15

1.1

1.05
1

0.95

0.9

0.85

-25 0 25 50 75 100 125 150

Temperature [°

Figure 5. Start up C u rrent Figure 6. Start Threshold Voltage

C

]Temperature [°C]

5

KA1M0280RB/KA1H0280RB

Typical Performance Characteristics

(These characteristic graphs are normalized at Ta=25°C)

Fig.7 S top Threshold Volt a ge

1.15

1.1

1.05

V

th(L)

Vstop

1

0.95

0.9

0.85

-25 0 25 50 75 100 125 150

Temperature [ °C] Temperature [°C]

Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle

1.2

1.15

1.1

1.05

Vz

0.95

0.9

0.85

0.8

Fig.9 Vcc Zener Voltage

1

-25 0 25 50 75 100 125 150

C

Temperature [ °

] Temperature [°C]

(Continued)

Dmax

Vsd

F i g.8 Ma xi mu m Dut y Cycle

1.15

1.1

1.05
1

0.95

0.9

0.85

-25 0 25 50 75 100 125 150

Fig.10 S hutdown Feedback Voltage

1.15

1.1

1.05
1

0.95

0.9

0.85

-25 0 25 50 75 100 125 150

Idelay

Figure 9. V

Fig.11 Shutdown Delay Cur r ent

1.2

1.15

1.1

1.05
1

0.95

0.9

0.85

0.8

-25 0 25 50 75 100 125 150

Zener Voltage Figure 10. Shutdown Feedback Voltage

CC

Fig.12 Over V ol tage Prot ec tion

1.15

1.1

1.05

Vovp

1

0.95

0.9

0.85

-25 0 25 50 75 100 125 150

Temperature [°

Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection

C

]Temperature [°C]

6

KA1M0280RB/KA1H0280RB

Typical Performance Characteristics

(These characteristic groups are normalized at Ta=25°C)

Fig.14 Drain Source Turn-on

2.5

2

1.5

)

(

Rdson

1

0.5

0

-25 0 25 50 75 100 125 150

Figure 13. Static Drain-Source on Resi stance

Resistance

Temperature [

]

C

°

(Continued)

7

KA1M0280RB/KA1H0280RB

Package Dimensions

TO-220F-4L

8

KA1M0280RB/KA1H0280RB

Package Dimensions

TO-220F-4L(Forming)

(Continued)

9

KA1M0280RB/KA1H0280RB

Ordering Information

Product Number Package Rating Fosc

KA1M0280RB-TU TO-220F-4L
KA1M0280RB-YDTU TO-220F-4L(Forming)

800V, 2A 67kHz

KA1H0280RB-TU TO-220F-4L
KA1H0280RB-YDTU TO-220F-4L(Forming)

TU : Non Forming Type
YDTU : Forming Type

800V, 2A 100kHz

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHA NGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREI N TO IMPROVE RELIABILITY, FUNCTIO N OR DESIGN. FAIRCH ILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER IT S PATENT RIGHTS, NOR THE RIGHTS OF OTHE RS.

LIFE SUPPORT POL I CY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.

www.fairchildsemi.com

2. A critical component in any component of a life support
device or sy stem whose failure to perform can be
reasonably expec ted to cause the failur e of the life support
device or system, or to affect its safety or effec t iv ene ss .

8/25/03 0.0m 001

 2003 Fairchild Semiconductor Corporation

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