Datasheet K845P, K825P, K815P Datasheet (VISHAY)

Page 1
K815P/ K825P/ K845P
Optocoupler with Photodarlington Output
Description
The K815P/ K825P/ K845P consist of a photodarling­ton optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead up to 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance be- tween input and output for highest safety requirements.
Applications
Vishay Telefunken
Programmable logic controllers, modems, answering machines, general applications
Features
D
Endstackable to 2.54 mm (0.1’) spacing
D
Isolation test voltage V
D
Low coupling capacitance of typical 0.3 pF
D
Low temperature coefficient of CTR
D
Wide ambient temperature range
D
Underwriters Laboratory (UL) 1577 recognized, file number E-76222
D
CSA (C-UL) 1577 recognized, file number E- 76222 - Double Protection
D
Coupling System U
= 5 kV RMS
IO
14925
Coll. Emitter
Anode Cath.
4 PIN
8 PIN
16 PIN
14580
C
Order Instruction
Ordering Code CTR Ranking Remarks K815P > 600% 4 Pin = Single channel K825P > 600% 8 Pin = Dual channel K845P > 600% 16 Pin = Quad channel
Rev. A3, 29–Jun–99 1 (9)
Page 2
K815P/ K825P/ K845P
Vishay Telefunken
Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit Reverse voltage V Forward current I Forward surge current tp 10 ms I Power dissipation T Junction temperature T
Output (Detector)
Parameter Test Conditions Symbol Value Unit Collector emitter voltage V Emitter collector voltage V Collector current I Peak collector current tp/T = 0.5, tp 10 ms I Power dissipation T Junction temperature T
25°C P
amb
25°C P
amb
R
F
FSM
V
CEO ECO
C
CM
V
6 V
60 mA
1.5 A
100 mW
j
125
°
C
35 V
7 V
80 mA 100 mA 150 mW
j
125
°
C
Coupler
Parameter Test Conditions Symbol V alue Unit AC Isolation test voltage (RMS) t = 1 min, f = 50 Hz VIO Total power dissipation T Operating ambient
temperature range Storage temperature range T Soldering temperature 2 mm from case, t 10 s T
1)
Related to standard climate 23/50 DIN 50014
25°C P
amb
T
tot
amb
stg
sd
1)
5 kV
250 mW
–40 to +100
–55 to +125
260
°
C
°
C
°
C
Rev. A3, 29–Jun–992 (9)
Page 3
K815P/ K825P/ K845P
Vishay Telefunken
Electrical Characteristics (T
amb
= 25°C)
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit Forward voltage IF = 20 mA V Reverse current VR = 6 V I
Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter voltage IC = 100 mA V Emitter collector voltage IE = 100 mA V Collector dark current VCE = 10 V, IF = 0, E = 0 I
Coupler
Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter satu-
ration voltage Cut-off frequency IF = 10 mA, VCE = 5 V,
Coupling capacitance f = 1 MHz C
IF = 20 mA, IC = 5 mA V
R
L
= 100
W
F
R
CEO ECO
CEO
CEsat
f
c
k
1.2 1.4 V 10
35 V
7 V
100 nA
0.1 V
10 kHz
0.3 pF
m
A
Current Transfer Ratio (CTR)
Parameter Test Conditions Type Symbol Min. Typ. Max. Unit
IC/I
F
VCE = 2 V, IF = 1 mA K815P, K825P,
K845P
CTR 6.0 8.0
Rev. A3, 29–Jun–99 3 (9)
Page 4
K815P/ K825P/ K845P
CE C L
(g)
Vishay Telefunken
Switching Characteristics
Parameter Test Conditions Symbol Typ. Unit Rise time VCE = 2 V, IC = 10 mA, RL = 100 W (see figure 1) t Turn-off time
I
F
r
t
off
300 250
m m
96 11698
s s
+ V
CC
= 10 mA ;
I
C
Channel I
Channel II
Oscilloscope R
CI
0
RG = 50
t
p
+
0.01
T t
= 1 ms
1
14779
I
I
F
F
W
50
W
R
L
Figure 1. Test circuit, non-saturated operation
Adjusted through input amplitude
w
I
1 M
W
w
20 pF
0
I
C
100%
90%
10%
0
t
r
t
d
t
on
t
p
t
d
t
r
t
(= td + tr) turn-on time
on
pulse duration delay time rise time
Figure 2. Switching times
t
p
t
t
s
f
t
off
t
s
t
f
t
(= ts + tf) turn-off time
off
t
t
storage time fall time
Rev. A3, 29–Jun–994 (9)
Page 5
K815P/ K825P/ K845P
Vishay Telefunken
Typical Characteristics (T
1.3 IF=10mA
1.2
1.1
1.0
F
0.9
V – Forward Voltage ( V )
0.8
0 20406080100
T
– Ambient Temperature ( °C )14389
amb
= 25_C, unless otherwise specified)
amb
Figure 3. Forward Voltage vs. Ambient Temperature
1000.0
100.0
100000
VCE=10V I
=0
10000
1000
100
with open Base ( nA )
CEO
I – Collector Dark Current,
F
10
1
20 30 40 50 60 70 80 90 100
T
– Ambient Temperature ( °C )14392
amb
Figure 6. Collector Dark Current vs.
Ambient Temperature
1000.0 VCE=2V
100.0
10.0
1.0
F
I – Forward Current ( mA )
0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF – Forward Voltage ( V )14390
Figure 4. Forward Current vs. Forward Voltage
1.5
VCE=5V
1.4
I
=1mA
F
1.3
1.2
1.1
1.0
0.9
0.8
0.7
rel
0.6
CTR – Relative Current Transfer Ratio
0.5
–30–20–10 0 10 20 30 40 50 60 70 80 90100
T
– Ambient Temperature ( °C )14391
amb
10.0
1.0
C
I – Collector Current ( mA )
0.1
0.1 1.0 10.0 100.0 IF – Forward Current ( mA )14393
Figure 7. Collector Current vs. Forward Current
100.0
10.0
1.0
C
I – Collector Current ( mA )
0.1
0.1 1.0 10.0 100.0
VCE – Collector Emitter Voltage ( V )14394
IF=2mA
1mA
0.5mA
0.2mA
0.1mA
Figure 5. Relative Current Transfer Ratio vs.
Figure 8. Collector Current vs. Collector Emitter Voltage
Ambient Temperature
Rev. A3, 29–Jun–99 5 (9)
Page 6
K815P/ K825P/ K845P
Vishay Telefunken
1.1 CTR=200%
1.0
0.9
0.8
0.7
0.6
CEsat
V – Collector Emitter Saturation Voltage ( V )
1 10 100
IC – Collector Current ( mA )14395
Figure 9. Collector Emitter Saturation Voltage vs.
Collector Current
Pin 1 Indication
100%
Type
50%
25%
10000
VCE=2V
1000
100
CTR – Current Transfer Ratio ( % )
10
0.1 1.0 10.0 100.0 IF – Forward Current ( mA )14396
Figure 10. Current Transfer Ratio vs. Forward Current
Date Code (YM)
K815P
820UTK63
Coupling
System
Indicator Figure 11. Marking example
Company
Logo
Production
15085
Location
Rev. A3, 29–Jun–996 (9)
Page 7
Dimensions of K815P in mm
K815P/ K825P/ K845P
Vishay Telefunken
weight: ca. 0.25 g creepage distance: air path:
after mounting on PC board
y y
6 mm 6 mm
Dimensions of K825P in mm
96 12231
weight: ca. 0.5 g creepage distance: air path:
y y
6 mm 6 mm
after mounting on PC board
96 12228
Rev. A3, 29–Jun–99 7 (9)
Page 8
K815P/ K825P/ K845P
Vishay Telefunken
Dimensions of K845P in mm
weight: ca. 1.1 g creepage distance: air path:
y y
6 mm 6 mm
after mounting on PC board
96 12227
Rev. A3, 29–Jun–998 (9)
Page 9
K815P/ K825P/ K845P
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use V ishay Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly , any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Rev. A3, 29–Jun–99 9 (9)
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