Datasheet K4S560832B-TC-L75, K4S560832B-TC-L1L, K4S560832B-TC-L1H Datasheet (Samsung)

K4S560832B CMOS SDRAM

256Mbit SDRAM

8M x 8bit x 4 Banks

Synchronous DRAM

LVTTL

Revision 0.2

May. 2000

* Samsung Electronics reserves the right to change products or specification without notice.

Rev. 0.2 May.2000

K4S560832B CMOS SDRAM

Revision 0.1 (March 10, 2000)

• Deleted -80 Product Specification

• Changed the Current values of ICC5, ICC6

• Changed tOH of -75 Product from 2.7ns to 3ns

• Changed the Bank select address in SIMPLIFIED TRUTH TABLE Notes 4.
BA0 BA1 Before After

Low Low Bank A Bank A
Low High Bank B Bank C

High Low Bank C Bank B
High High Bank D Bank D

Revision 0.2 (May 30, 2000)

• Eliminate "Preliminary"

• Add "133MHz" in IBIS SPECIFICATION

Rev. 0.2 May.2000

K4S560832B CMOS SDRAM

8M x 8Bit x 4 Banks Synchronous DRAM

GENERAL DESCRIPTIONFEATURES

• JEDEC standard 3.3V power supply

• LVTTL compatible with multiplexed address

• Four banks operation

• MRS cycle with address key programs

-. CAS latency (2 & 3)

-. Burst length (1, 2, 4, 8 & Full page)

-. Burst type (Sequential & Interleave)

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation

• DQM for masking

• Auto & self refresh

• 64ms refresh period (8K Cycle)

FUNCTIONAL BLOCK DIAGRAM

The K4S560832B is 268,435,456 bits synchronous high data rate
Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabri­cated with SAMSUNG's high performance CMOS technology. Syn­chronous design allows precise cycle control with the use of
system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and
programmable latencies allow the same device to be useful for a
variety of high bandwidth, high performance memory system appli­cations.

ORDERING INFORMATION

Part No. Max Freq. Interface Package

K4S560832B-TC/L75 133MHz(CL=3)
K4S560832B-TC/L1H 100MHz(CL=2)
K4S560832B-TC/L1L 100MHz(CL=3)

LVTTL

54pin

TSOP(II)

CLK

ADD

Data Input Register

Bank Select

Refresh Counter

Row Buffer

Address Register

LRAS

LCBR

LCKE

LRAS LCBR LWE LDQM

CLK CKE CS RAS CAS WE DQM

Row Decoder Col. Buffer

Latency & Burst Length

Programming Register

LCAS LWCBR

Timing Register

8M x 8
8M x 8
8M x 8
8M x 8

Column Decoder

LWE

LDQM

Sense AMP

Output BufferI/O Control

DQi

* Samsung Electronics reserves the right to change products or specification without notice.

Rev. 0.2 May.2000

K4S560832B CMOS SDRAM

PIN CONFIGURATION (Top view)

VDD

DQ0

VDDQ

N.C

DQ1

VSSQ

N.C

DQ2

VDDQ

N.C

DQ3

VSSQ

N.C
VDD
N.C

WE
CAS
RAS

CS
BA0
BA1

A10/AP

A0
A1
A2
A3

VDD

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27

54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28

VSS
DQ7
VSSQ
N.C
DQ6
VDDQ
N.C
DQ5
VSSQ
N.C
DQ4
VDDQ
N.C
VSS
N.C/RFU
DQM
CLK
CKE
A12
A11
A9
A8
A7
A6
A5
A4
VSS

54Pin TSOP (II)

(400mil x 875mil)

(0.8 mm Pin pitcH)

PIN FUNCTION DESCRIPTION

Pin Name Input Function

CLK System clock Active on the positive going edge to sample all inputs.
CS Chip select

CKE Clock enable

A0 ~ A12 Address

BA0 ~ BA1 Bank select address

RAS Row address strobe

CAS Column address strobe

WE Write enable

DQM Data input/output mask

DQ0 ~7 Data input/output Data inputs/outputs are multiplexed on the same pins.
VDD/VSS Power supply/ground Power and ground for the input buffers and the core logic.

VDDQ/VSSQ Data output power/ground

N.C/RFU

No connection
/reserved for future use

Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQM

Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.

Row/column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA12, Column address : CA0 ~ CA9

Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.

Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.

Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.

Enables write operation and row precharge.
Latches data in starting from CAS, WE active.

Makes data output Hi-Z, tSHZ after the clock and masks the output.
Blocks data input when DQM active.

Isolated power supply and ground for the output buffers to provide improved noise
immunity.

This pin is recommended to be left No Connection on the device.

Rev. 0.2 May.2000

K4S560832B CMOS SDRAM

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Value Unit

Voltage on any pin relative to Vss VIN, VOUT -1.0 ~ 4.6 V
Voltage on VDD supply relative to Vss VDD, VDDQ -1.0 ~ 4.6 V
Storage temperature TSTG -55 ~ +150 °C
Power dissipation PD 1 W
Short circuit current IOS 50 mA

Note :

Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

DC OPERATING CONDITIONS

Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C)

Parameter Symbol Min Typ Max Unit Note

Supply voltage VDD, VDDQ 3.0 3.3 3.6 V
Input logic high voltage VIH 2.0 3.0 VDD+0.3 V 1
Input logic low voltage VIL -0.3 0 0.8 V 2
Output logic high voltage VOH 2.4 - - V IOH = -2mA
Output logic low voltage VOL - - 0.4 V IOL = 2mA
Input leakage current ILI -10 - 10 uA 3

Notes :

1. VIH (max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns.

2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.

3. Any input 0V ≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.

CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)

Pin Symbol Min Max Unit Note

Clock CCLK 2.5 4.0 pF 1
RAS, CAS, WE, CS, CKE, DQM CIN 2.5 5.0 pF 2
Address CADD 2.5 5.0 pF 2
DQ0 ~ DQ15 COUT 4.0 6.5 pF 3

Notes :

1. -75 only specify a maximum value of 3.5pF

2. -75 only specify a maximum value of 3.8pF

3. -75 only specify a maximum value of 6.0pF

Rev. 0.2 May.2000

K4S560832B CMOS SDRAM

DC CHARACTERISTICS

(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)

Parameter Symbol Test Condition

Operating current
(One bank active)

Precharge standby current in
power-down mode

Precharge standby current in
non power-down mode

Active Standby current
in power-down mode

Active standby current in
non power-down mode
(One bank active)

Operating current
(Burst mode)

Refresh current ICC5 tRC ≥ tRC(min) 220 210 210 mA 2

Self refresh current ICC6

ICC1

ICC2P

ICC2PS

ICC2N

ICC2NS

ICC3P

ICC3PS

ICC3N

ICC3NS

ICC4

Burst length = 1
tRC ≥ tRC(min)
IO = 0 mA

CKE ≤ VIL(max), tCC = 10ns
CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable
CKE ≤ VIL(max), tCC = 10ns

CKE & CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable
IO = 0 mA

Page burst
4banks activated.
tCCD = 2CLKs

CKE ≤ 0.2V

C 3 mA 3
L 2 mA 4

Version

-75 -1H -1L

120 110 110 mA 1

2
2

16

14

6
6

30 mA

25 mA

140 115 115 mA 1

Unit Note

mA

mA

mA

Notes :

1. Measured with outputs open.

2. Refresh period is 64ms.

3. K4S560832B-TC**

4. K4S560832B-TL**

5. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ).

Rev. 0.2 May.2000

K4S560832B CMOS SDRAM

AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V, TA = 0 to 70°C)

Parameter Value Unit

AC input levels (Vih/Vil) 2.4/0.4 V
Input timing measurement reference level 1.4 V
Input rise and fall time tr/tf = 1/1 ns
Output timing measurement reference level 1.4 V
Output load condition See Fig. 2

Output

870Ω

3.3V

1200Ω

50pF

VOH (DC) = 2.4V, IOH = -2mA
VOL (DC) = 0.4V, IOL = 2mA

Output

Z0 = 50Ω

(Fig. 2) AC output load circuit (Fig. 1) DC output load circuit

Vtt = 1.4V

50Ω

50pF

OPERATING AC PARAMETER

(AC operating conditions unless otherwise noted)

Parameter Symbol

Row active to row active delay tRRD(min) 15 20 20 ns 1
RAS to CAS delay tRCD(min) 20 20 20 ns 1
Row precharge time tRP(min) 20 20 20 ns 1

Row active time

Row cycle time tRC(min) 65 70 70 ns 1
Last data in to row precharge tRDL(min) 2 CLK 2,5
Last data in to Active delay tDAL(min) 2 CLK + 20 ns - 5
Last data in to new col. address delay tCDL(min) 1 CLK 2
Last data in to burst stop tBDL(min) 1 CLK 2
Col. address to col. address delay tCCD(min) 1 CLK 3

Number of valid output data

Notes :

1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time
and then rounding off to the next higher integer.

2. Minimum delay is required to complete write.

3. All parts allow every cycle column address change.

4. In case of row precharge interrupt, auto precharge and read burst stop.

5. For 1H/1L, tRDL=1CLK and tDAL=1CLK+20ns is also supported .
SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + 20ns.

CAS latency=3 2
CAS latency=2 - 1

tRAS(min) 45 50 50 ns 1

tRAS(max) 100 us

-75 -1H -1L

Version

Unit Note

ea 4

Rev. 0.2 May.2000

K4S560832B CMOS SDRAM

AC CHARACTERISTICS (AC operating conditions unless otherwise noted)

Parameter Symbol

CLK cycle time

CLK to valid
output delay

Output data
hold time

CLK high pulse width tCH 2.5 3 3 ns 3
CLK low pulse width tCL 2.5 3 3 ns 3
Input setup time tSS 1.5 2 2 ns 3
Input hold time tSH 0.8 1 1 ns 3
CLK to output in Low-Z tSLZ 1 1 1 ns 2

CLK to output
in Hi-Z

Notes :

1. Parameters depend on programmed CAS latency.

2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.

3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.

CAS latency=3
CAS latency=2 - 10 12
CAS latency=3
CAS latency=2 - 6 7
CAS latency=3
CAS latency=2 - 3 3

CAS latency=3
CAS latency=2 - 6 7

tCC

tSAC

tOH

tSHZ

-75 -1H -1L

Min Max Min Max Min Max

7.5
1000

5.4 6 6

3 3 3

5.4 6 6

10

1000

10

1000 ns 1

Unit Note

ns 1,2

ns 2

ns

DQ BUFFER OUTPUT DRIVE CHARACTERISTICS

Parameter Symbol Condition Min Typ Max Unit Notes

Output rise time trh

Output fall time tfh

Output rise time trh

Output fall time tfh

Notes :

1. Rise time specification based on 0pF + 50 Ohms to VSS, use these values to design to.

2. Fall time specification based on 0pF + 50 Ohms to VDD, use these values to design to.

3. Measured into 50pF only, use these values to characterize to.

4. All measurements done with respect to VSS.

Measure in linear
region : 1.2V ~1.8V

Measure in linear
region : 1.2V ~1.8V

Measure in linear
region : 1.2V ~1.8V

Measure in linear
region : 1.2V ~1.8V

1.37 4.37 Volts/ns 3

1.30 3.8 Volts/ns 3

2.8 3.9 5.6 Volts/ns 1,2

2.0 2.9 5.0 Volts/ns 1,2

Rev. 0.2 May.2000

K4S560832B CMOS SDRAM

IBIS SPECIFICATION

IOH Characteristics (Pull-up)

Voltage

(V) I (mA) I (mA) I (mA)

3.45 -2.4

3.3 -27.3

3.0 0.0 -74.1 -0.7

2.6 -21.1 -129.2 -7.5

2.4 -34.1 -153.3 -13.3

2.0 -58.7 -197.0 -27.5

1.8 -67.3 -226.2 -35.5

1.65 -73.0 -248.0 -41.1

1.5 -77.9 -269.7 -47.9

1.4 -80.8 -284.3 -52.4

1.0 -88.6 -344.5 -72.5

0.0 -93.0 -502.4 -93.0

100MHz/

133MHz

Min

100MHz/

133MHz

Max

66MHz

Min

66MHz, 100MHz and 133MHz Pull-up

0 30.5 1 1.5 2 2.5 3.5

0

-100

-200

-300

mA

-400

-500

-600

Voltage

IOH Min (100MHz/133MHz)
IOH Min (66MHz)
IOH Max (66 and 100MHz/133MHz)

IOL Characteristics (Pull-down)

Voltage

(V) I (mA) I (mA) I (mA)

0 0.0 0.0 0.0

0.4 27.5 70.2 17.7

0.65 41.8 107.5 26.9

0.85 51.6 133.8 33.3
1 58.0 151.2 37.6

1.4 70.7 187.7 46.6

1.5 72.9 194.4 48.0

1.65 75.4 202.5 49.5

1.8 77.0 208.6 50.7

1.95 77.6 212.0 51.5
3 80.3 219.6 54.2

3.45 81.4 222.6 54.9

100MHz/

133MHz

Min

100MHz/

133MHz

Max

66MHz

Min

66MHz, 100MHz and 133MHz Pull-down

250

200

150

mA

100

50

0

0 30.5 1 1.5 2 2.5 3.5

Voltage

IOL Min (100MHz/133MHz)
IOL Min (66MHz)
IOL Max (100MHz/133MHz)

Rev. 0.2 May.2000

K4S560832B CMOS SDRAM

VDD Clamp @ CLK, CKE, CS, DQM & DQ

VDD (V) I (mA)

0.0 0.0

0.2 0.0

0.4 0.0

0.6 0.0

0.7 0.0

0.8 0.0

0.9 0.0

1.0 0.23

1.2 1.34

1.4 3.02

1.6 5.06

1.8 7.35

2.0 9.83

2.2 12.48

2.4 15.30

2.6 18.31

VSS Clamp @ CLK, CKE, CS, DQM & DQ

VSS (V) I (mA)

-2.6 -57.23

-2.4 -45.77

-2.2 -38.26

-2.0 -31.22

-1.8 -24.58

-1.6 -18.37

-1.4 -12.56

-1.2 -7.57

-1.0 -3.37

-0.9 -1.75

-0.8 -0.58

-0.7 -0.05

-0.6 0.0

-0.4 0.0

-0.2 0.0

0.0 0.0

Minimum VDD clamp current

(Referenced to VDD)

20

15

10

mA

5

0

0 31 2

Minimum VSS clamp current

-3 0-2 -1

0

-10

-20

-30

mA

-40

-50

-60

Voltage

I (mA)

Voltage

I (mA)

Rev. 0.2 May.2000

K4S560832B CMOS SDRAM

SIMPLIFIED TRUTH TABLE

Command

CKEn-1 CKEn CS RAS CAS WE DQM BA0,1 A10/AP

A11,A12,

A9 ~ A0

Note

Register Mode register set H X L L L L X OP code 1,2

Refresh

Auto refresh

Self
refresh

Entry L 3

H

Exit L H

H

L L L H X X

L H H H

X X

3

3

H X X X 3
Bank active & row addr. H X L L H H X V Row address
Read &

column address

Write &
column address

Auto precharge disable

H X L H L H X V

L
Auto precharge enable H 4,5
Auto precharge disable

H X L H L L X V

L
Auto precharge enable H 4,5

Column
address

(A0 ~ A9)

Column
address

(A0 ~ A9)

4

4

Burst Stop H X L H H L X X 6

Precharge

Bank selection

H X L L H L X

V L

X

All banks X H

Clock suspend or
active power down

Entry H L

H X X X

L V V V

X

X

Exit L H X X X X X

Entry H L

Precharge power down mode

Exit L H

H X X X

L H H H

H X X X

X

X

X

L V V V

DQM H V X 7

No operation command H X

X

H X X X

X X

L H H H

(V=Valid, X=Don't care, H=Logic high, L=Logic low)

Notes :

1. OP Code : Operand code
A0 ~ A12 & BA0 ~ BA1 : Program keys. (@ MRS)

2. MRS can be issued only at all banks precharge state.
A new command can be issued after 2 CLK cycles of MRS.

3. Auto refresh functions are as same as CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.

4. BA0 ~ BA1 : Bank select addresses.
If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected.
If both BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank B is selected.
If both BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank C is selected.
If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected.
If A10/AP is "High" at row precharge, BA0 and BA1 is ignored and all banks are selected.

5. During burst read or write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.

6. Burst stop command is valid at every burst length.

7. DQM sampled at positive going edge of a CLK and masks the data-in at the very CLK (Write DQM latency is 0),
but makes Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2)

Rev. 0.2 May.2000