Datasheet K4H280438B-TCB0, K4H280438B-TCA2, K4H280438B-TCA0, K4H281638B-TLA2, K4H281638B-TLA0 Datasheet (Samsung)

- 1 -

REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

DDR SDRAM Specification

Version 1.0

- 2 -

REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

Revision History

Version 0 (May, 1998)

- First version for internal review

Version 0.1(June, 1998)

- Added x4 organization

Version 0.2(Sep,1998)

1. Added "Issue prcharge command for all banks of the device" as the fourth step of power-up squence.

2. In power down mode timing diagram, NOP condition is added to precharge power down exit.

Version 0.3(Dec,1998)

- Added QFC Function.

- Added DC current value

- Reduce I/O capacitance values
Version 0.4(Feb,1999)

-Added DDR SDRAM history for reference(refer to the following page)

-Added low power version DC spec

Version 0.5(Apr,1999)

-Revised following first showing for JEDEC standard

-Added DC target current based on new DC test condition

Version 0.6(July 1,1999)

1.Modified binning policy
From To

-Z (133Mhz) -Z (133Mhz/266Mbps@CL=2)

-8 (125Mhz) -Y (133Mhz/266Mbps@CL=2.5)

-0 (100Mhz) -0 (100Mhz/200Mbps@CL=2)

2.Modified the following AC spec values

*1 : Changed description method for the same functionality. This means no difference from the previous version.

3.Changed the following AC parameter symbol
From. To.
Output data access time from CK/CK tDQCK tAC

Version 0.61(August 9,1999)

- Changed the some values of "write with auto precharge" table for different bank in page 31.

From. To.

-Z -0 -Z -Y -0

tAC +/- 0.75ns +/- 1ns +/- 0.75ns +/- 0.75ns +/- 0.8ns

tDQSCK +/- 0.75ns +/- 1ns +/- 0.75ns +/- 0.75ns +/- 0.8ns

tDQSQ +/- 0.5ns +/- 0.75ns +/- 0.5ns +/- 0.5ns +/- 0.6ns

tDS/tDH 0.5 ns 0.75 ns 0.5 ns 0.5 ns 0.6 ns

tCDLR

*1

2.5tCK-tDQSS 2.5tCK-tDQSS 1tCK 1tCK 1tCK

tPRE

*1

1tCK +/- 0.75ns 1tCK +/- 1ns 0.9/1.1 tCK 0.9/1.1 tCK 0.9/1.1 tCK

tRPST

*1

tCK/2 +/- 0.75ns tCK/2 +/- 1ns 0.4/0.6 tCK 0.4/0.6 tCK 0.4/0.6 tCK

tHZQ

*1

tCK/2 +/- 0.75ns tCK/2 +/- 1ns +/- 0.75ns +/- 0.75ns +/-0.8ns

Asserted

command

For Different Bank

3 4

Old New Old New

Read Legal Illegal Legal Illegal

Read + AP

*1

Legal Illegal Legal Illegal

- 3 -

REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

Revision History(continued)

Version 0.7 (March, 2000)

- Changed 128Mb spec from target to Preliminary version.

- Changed partnames as follows.

- Changed input cap. spec.

- Changed operating condition.

- Added Overshoot/Undershoot spec
. Vih(max) = 4.2V, the overshoot voltage duration is ≤ 3ns at VDD.
. Vil(min) =- 1.5V, the overshoot voltage duration is ≤ 3ns at VSS.

- Changed AC parameters as follows.

- Added DC spec values.

Version 0.71 (April, 2000)

- Corrected a typo for tRAS at 133Mhz/CL2.5 from 48ns t0 45ns.

- Corrected a typo in "General Information" table from 64Mx4 to 8Mx16.

Version 0.72(May,2000)

- Changed DC spec item & test condition
Version 0.73(June,2000)

- Added updated DC spec values

- Deleted tDAL in AC parameter
Version 1.0(November,2000)

- Eliminate "preliminary"

from to
KM44L32031BT-G(L)Z/Y/0 K4H280438B-TC(L)A2/B0/A0
KM48L16031BT-G(L)Z/Y/0 K4H280838B-TC(L)A2/B0/A0
KM416L8031BT-G(L)Z/Y/0 K4H281638B-TC(L)A2/B0/A0

from to

CK/CK 2.5pF ~ 3.5pF 2.0pF ~ 3.0pF w/ Delta Cin = 0.25pF

DQ/DQS/DM 4.0pF ~ 5.5pF 4.0pF ~ 5.0pF w/ Delta Cin = 0.5pF

CMD/Addr 2.5pF ~ 3.5pF 2.0pF ~ 3.0pF with Delta Cin = 0.5pF

from to

Vil/Vih(ac) Vref +/- 0.35V Vref +/- 0.31V

VIL/VIH(dc) Vref +/- 0.18V Vref +/- 0.15V

from to Comments

tDQSQ +/- 0.5(PC266), +/- 0.6(PC200) +0.5(PC266), +0.6(PC200)

tDV +/- 0.35tCK - Removed

tQH -

tHPmin - 0.75ns(PC266)

New Definition

tHPmin - 1.0ns(PC200)

tHP - tCLmin or tCHmin New Definition

- 4 -

REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

Contents

Revision History

General Information

1. Key Features

1.1 Features

1.2 Operating Frequencies

2. Package Pinout & Dimension

2.1 Package Pintout

2.2 Input/Output Function Description

2.3 66 Pin TSOP(II)/MS-024FC Package Physical Dimension

3. Functional Description

3.1 Simplified State Diagram

3.2 Basic Functionality

3.2.1 Power-Up Sequence

3.2.2 Mode Register Definition

3.2.2.1 Mode Register Set(MRS)

3.2.2.2 Extended Mode Register Set(EMRS)

3.2.3 Precharge

3.2.4 No Operation(NOP) & Device Deselect

3.2.5 Row Active

3.2.6 Read Bank

3.2.7 Write Bank

3.3 Essential Functionality for DDR SDRAM

3.3.1 Burst Read Operation

3.3.2 Burst Write Operation

3.3.3 Read Interrupted by a Read

3.3.4 Read Interrupted by a Write & Burst Stop

3.3.5 Read Interrupted by a Precharge

3.3.6 Write Interrupted by a Write

2
9

10
10
10

11
11
12
13

14
14

15
15
16
16
18
19
19
20
20
20

21
21
22
23
23
24
25

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REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

3.3.7 Write Interrupted by a Read & DM

3.3.8 Write Interrupted by a Precharge & DM

3.3.9 Burst Stop

3.3.10 DM masking

3.3.11 Read With Auto Precharge

3.3.12 Write With Auto Precharge

3.3.13 Auto Refresh & Self Refresh

3.3.14 Power Down

4. Command Truth Table

5. Functional Truth Table

6. Absolute Maximum Rating

7. DC Operating Conditions & Specifications

7.1 DC Operating Conditions

7.2 DC Specifications

8. AC Operating Conditions & Timming Specification

8.1 AC Operating Conditions

8.2 AC Timming Parameters & Specification

9. AC Operating Test Conditions

10. Input/Output Capacitance

11. IBIS: I/V Characteristics for Input and Output Buffers

11.1 Normal strength driver

11.2 Half strength driver( will be included in the future)

12. QFC function

QFC definition
QFC timming on Read Operation
QFC timming on Write operation with tDQSSmax
QFC timming on Write operation with tDQSSmin
QFC timming example for interrupted writes operation

Timing Diagram

26
27
28
29
30
31
32
33

34

35

40

40
41

42
42
43

45

45

46
46
48

49
49
49
50
50
51
52

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REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

Table 1 : Operating frequency and DLL jitter
Table 2. : Column address configurtion
Table 3 : Input/Output function description
Table 4 : Burst address ordering for burst length
Table 5 : Bank selection for precharge by bank address bits
Table 6 : Operating description when new command asserted while
read with auto precharge is issued
Table 7 : Operating description when new command asserted while

write with auto precharge is issued

Table 8 : Command truth table
Table 9-1 : Functional truth table
Table 9-2 : Functional truth table (contiued)

Table 9-3 : Functional truth table (contiued)

Table 9-4 : Functional truth table (contiued)
Table 9-5 : Functional truth table (cotinued)
Table 10 : Absolute maximum raings
Table 11 : DC operating condtion

Table 12 : DC specification
Table 13 : AC operating condition
Table 14 : AC timing parameters and specifications

Table 15 : AC operating test conditions
Table 16 : Input/Output capacitance
Table 17 : Pull down and pull up current values

List of tables

10
11
12
17
19
30

31
34

35
36
37
38
39
40
40
42
42
44
45
45
47

- 7 -

REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

Figure 1 : 128Mb Package Pinout
Figure 2 : Package dimension
Figure 3 :State digram
Figure 4 : Power up and initialization sequence
Figure 5 : Mode register set
Figure 6 : Mode register set sequence
Figure 7 : Extend mode register set
Figure 8 : Bank activation command cycle timing
Figure 9 : Burst read operation timing

Figure 10 : Burst write operation timing
Figure 11 : Read interrupted by a read timing
Figure 12 : Read interrupted by a write and burst stop timing
Figure 13 : Read interrupted by a precharge timing
Figure 14 : Write interrupted by a write timing

Figure 15 : Write interrupted by a read and DM timing
Figure 16 : Write interrupted by a precharge and DM timing

Figure 17 : Burst stop timing
Figure 18 : DM masking timing
Figure 19 : Read with auto precharge timing
Figure 20 : Write with auto precharge timing

Figure 21 : Auto refresh timing
Figure 22 : Self refresh timing
Figure 23 : Power down entry and exit timing
Figure 24 : Output Load Circuit (SSTL_2)
Figure 25 : I / V characteristics for input/output buffers:
pull-up(above) and pull-down(below)
Figure 26 : QFC timing on read operation
Figure 27 : QFC timing on write operation with tDQSSmax
Figure 28 : QFC timing on write operation with tDQSSmin
Figure 29 : QFC timing example for interrupted writes operation

List of figures

11
13
14
15
16
17
18
20
21
22
23
23
24
25
26
27
28
29
30
31
32
32
33
45
46

49
50
50
51

- 8 -

REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

General Information

Organization 133Mhz w/ CL=2 133Mhz w/ CL=2.5 100Mhz w/ CL=2

32Mx4

K4H280438B-TCA2 K4H280438B-TCB0 K4H280438B-TCA0

K4H280438B-TLA2 K4H280438B-TLB0 K4H280438B-TLA0

16Mx8

K4H280838B-TCA2 K4H280838B-TCB0 K4H280838B-TCA0

K4H280838B-TLA2 K4H280838B-TLB0 K4H280838B-TLA0

8Mx16

K4H281638B-TCA2 K4H281638B-TCB0 K4H281638B-TCA0

K4H281638B-TLA2 K4H281638B-TLB0 K4H281638B-TLA0

T : TSOP2 (400mil x 875mil)

A0 : 10ns@CL2
A2 : 7.5ns@CL2
B0 : 7.5ns@CL2.5

C : (Commercial, Normal)
L : (Commercial, Low)

04 : x4
08 : x8
16 : x16
32 : x32

64 : 64M 4K/64ms
28 : 128M 4K/64ms
56 : 256M 8K/64ms
51 : 512M 8K/64ms
1G : 1G 16K/32ms

H : DDR SDRAM

M : 1st Generation
A : 2nd Generation
B : 3rd Generation
C : 4th Generation
D : 5th Generation
E : 6th Generation

K 4 H XX XX X X X - X X

Memory
DRAM
Small Classification
Density and Refresh

Temperature & Power

Package

Organization

Version

Interface (VDD & VDDQ)

1. SAMSUNG Memory : K

2. DRAM : 4

3. Small Classification

4. Density & Refresh

5. Organization

8. Version

9. Package

10. Temperature & Power

11. Speed

3 : 4 Bank

6. Bank

1 2 3 4 5 6 7 8 9 10 11

XX

8: SSTL-2(2.5V, 2.5V)

7. Interface (VDD & VDDQ)

Speed

Bank

- 9 -

REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

• Double-data-rate architecture; two data transfers per clock cycle

• Bidirectional data strobe(DQS)

• Four banks operation

• Differential clock inputs(CK and CK)

• DLL aligns DQ and DQS transition with CK transition

• MRS cycle with address key programs

-. Read latency 2, 2.5 (clock)

-. Burst length (2, 4, 8)

-. Burst type (sequential & interleave)

• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)

• Data I/O transactions on both edges of data strobe

• Edge aligned data output, center aligned data input

• LDM,UDM/DM for write masking only

• Auto & Self refresh

• 15.6us refresh interval(4K/64ms refresh)

• Maximum burst refresh cycle : 8

• 66pin TSOP II package

1. Key Features

1.1 Features

1.2 Operating Frequencies

*CL : Cas Latency

Table 1. Operating frequency and DLL jitter

- A2(DDR266A) - B0(DDR266B) - A0(DDR200)

Speed @CL2 133MHz@CL2 100MHz 100MHz

Speed @CL2.5 - 133MHz -

DLL jitter ±0.75ns ±0.75ns ±0.8ns

- 10 -

REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

VDD

1

66 PIN TSOP(II)

(400mil x 875mil)

DQ0

2

VDDQ

3

NC

4

DQ1

5

VSSQ

6

NC

7

DQ2

8

VDDQ

9

NC

10

DQ3 11

VSSQ 12

BA0

20

CS

19

RAS

18

CAS

17

WE

16

NC

15

VDDQ

14

NC 13

VDD

27

A3

26

A2

25

A1

24

A0

23

AP/A10

22

BA1

21

VSS

54

DQ7

53

VSSQ

52

NC

51

DQ6

50

VDDQ

49

NC

48

DQ5

47

VSSQ

46

NC

45

DQ4

44

VDDQ

43

A11

35

36

CKE

37

CK

38

DM

39

VREF

40

VSSQ

41

NC

42

VSS

55

A4

56

A5

57

A6

58

A7

59

A8

60

A9

34

(0.65 mm PIN PITCH)

33

32

31

30

29

28

61

62

63

64

65

66

NC

NC
NC

QFC/NC

NC

VDD

NC

DQS
NC

VSS

CK

NC
NC

32Mb x 4

16Mb x 8

VSS
NC
VSSQ
NC
DQ3
VDDQ
NC
NC
VSSQ
NC
DQ2
VDDQ

A11

CKE

CK

DM

VREF

VSSQ

NC

VSS

A4

A5

A6

A7

A8

A9

NC

DQS
NC

VSS

CK

NC
NC

VDD

NC

VDDQ

NC

DQ0

VSSQ

NC
NC

VDDQ

NC

DQ1

VSSQ

BA0

CS

RAS

CAS

WE

NC

VDDQ

NC

VDD

A3

A2

A1

A0

AP/A10

BA1

NC

NC
NC

QFC/NC

NC

VDD

Bank Address

BA0-BA1

Row Address

A0-A11

Auto Precharge

A10

MS-024FC

Organization Column Address

32Mx4 A0-A9, A11
16Mx8 A0-A9
8Mx16 A0-A8

DM is internally loaded to match DQ and DQS identically.

2.1 Package Pinout

FIgure 1. 128Mb package Pinout

Table 2. Column address configuration

1. Package Pinout & Dimension

VDD

DQ0

VDDQ

DQ1
DQ2

VSSQ

DQ3
DQ4

VDDQ

DQ5
DQ6

VSSQ

BA0

CS

RAS

CAS

WE

LDM

VDDQ

DQ7

VDD

A3

A2

A1

A0

AP/A10

BA1

NC

LDQS

NC

QFC/NC

NC

VDD

VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ

A11

CKE

CK

UDM

VREF

VSSQ

DQ8

VSS

A4

A5

A6

A7

A8

A9

NC

UDQS
NC

VSS

CK

NC
NC

8Mb x 16

- 11 -

REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

2.2 Input/Output Function Description

Table 3. Input/Output Function Description

SYMBOL TYPE DESCRIPTION

CK, CK Input Clock : CK and CK are differential clock inputs. All address and control input signals are sam-

pled on the positive edge of CK and negative edge of CK. Output (read) data is referenced to
both edges of CK. Internal clock signals are derived from CK/CK.

CKE Input Clock Enable : CKE HIGH activates, and CKE LOW deactivates internal clock signals, and

device input buffers and output drivers. Deactivating the clock provides PRECHARGE
POWER-DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER-DOWN
(row ACTIVE in any bank). CKE is synchronous for all functions except for disabling outputs,
which is achieved asynchronously. Input buffers, excluding CK, CK and CKE are disabled
during power-down and self refresh modes, providing low standby power. CKE will recognize
an LVCMOS LOW level prior to VREF being stable on power-up.

CS Input Chip Select : CS enables(registered LOW) and disables(registered HIGH) the command

decoder. All commands are masked when CS is registered HIGH. CS provides for external

bank selection on systems with multiple banks. CS is considered part of the command code.
RAS, CAS, WE Input Command Inputs : RAS, CAS and WE (along with CS) define the command being entered.
LDM,(U)DM Input Input Data Mask : DM is an input mask signal for write data. Input data is masked when DM is

sampled HIGH along with that input data during a WRITE access. DM is sampled on both

edges of DQS. DM pins include dummy loading internally, to matches the DQ and DQS load-

ing. For the x16, LDM corresponds to the data on DQ0-DQ7 ; UDM correspons to the data on

DQ8-DQ15.
BA0, BA1 Input Bank Addres Inputs : BA0 and BA1 define to which bank an ACTIVE, READ, WRITE or PRE-

CHARGE command is being applied.
A [n : 0] Input Address Inputs : Provide the row address for ACTIVE commands, and the column address

and AUTO PRECHARGE bit for READ/WRITE commands, to select one location out of the

memory array in the respective bank. A10 is sampled during a PRECHARGE command to

determine whether the PRECHARGE applies to one bank (A10 LOW) or all banks (A10

HIGH). If only one bank is to be precharged, the bank is selected by BA0, BA1. The address

inputs also provide the op-code during a MODE REGISTER SET command. BA0 and BA1

define which mode register is loaded during the MODE REGISTER SET command (MRS or

EMRS).
DQ I/O Data Input/Output : Data bus
LDQS,(U)DQS I/O Data Strobe : Output with read data, input with write data. Edge-aligned with read data, cen-

tered in write data. Used to capture write data. For the x16, LDQS corresponds to the data on

DQ0-DQ7 ; UDQS corresponds to the data on DQ8-DQ15.
QFC Output FET Control : Optional. Output during every Read and Write access. Can be used to control

isolation switches on modules.
NC - No Connect : No internal electrical connection is present.
VDDQ Supply DQ Power Supply : +2.5V ± 0.2V.
VSSQ Supply DQ Ground.
VDD Supply Power Supply : +2.5V ± 0.2V (device specific).
VSS Supply Ground.
VREF Input SSTL_2 reference voltage.

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REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

2.3 66 Pin TSOP(II)/MS-024FC Package Physical Dimension

Units : Millimeters

0.30±0.08

0.65TYP(0.71)

22.22±0.10

0.125

(0.80)

10.16±0.10

0×~8×

#1 #33

#66 #34

(1.50)

(1.50)

0.65±0.08

1.00±0.10

1.20MAX

(0.50) (0.50)(10.76)

11.76±0.20

(10×)(10×)

+0.075

-0.035

(0.80)

0.10 MAX

0.075 MAX

[ ]

0.05 MIN

(10×)

(10×)

(

R

0

.

1

5

)

0.210±0.05

0.665±0.05

(R

0.

1

5)

(

4

×

)

(

R

0

.

2

5

)

(

R0

.2

5)

0.45~0.75

0.25TYP

NOTE

1. ( ) IS REFERENCE

2. [ ] IS ASS’Y OUT QUALITY

Figure 2. Package dimension

- 13 -

REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

3. Functional Description

3.1 Simplified State Diagram

READ

SELF

REFRESH

AUTO

REFRESH

POWER

DOWN

ROW

ACTIVE

READAWRITEA

WRITEA

PRE

CHARGE

POWER

ON

IDLE

MODE

POWER

DOWN

REGISTER

SET

REFS

REFSX

REFA

MRS

CKEL

CKEH

ACT

CKEL

CKEH

WRITE

WRITE

WRITEA

PRE

PRE

POWER
APPLIED

READA

PRE

PRE

READA

WRITEA READA

READ

READ

Automatic Sequence
Command Sequence

BURST STOP

WRITEA : Write with autoprecharge

READA : Read with autoprecharge

Figure 3. State diagram

- 14 -

REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

3.2.1 Power-Up and Initialization Sequence

The following sequence is required for POWER UP and Initialization.

1. Apply power and attempt to maintain CKE at a low state(all other inputs may be undefined.)

- Apply VDD before or at the same time as VDDQ.

- Apply VDDQ before or at the same time as VTT & Vref.

2. Start clock and maintain stable condition for a minimum of 200us.

3. The minimum of 200us after stable power and clock(CK, CK), apply NOP & take CKE high.

4. Issue precharge commands for all banks of the device.

5. Issue EMRS to enable DLL.(To issue "DLL Enable" command, provide "Low" to A0, "High" to BA0 and "Low"
to all of the rest address pins, A1~A11 and BA1)

6. Issue a mode register set command for "DLL reset". The additional 200 cycles of clock input is required to
lock the DLL.
(To issue DLL reset command, provide "High" to A8 and "Low" to BA0)

7. Issue precharge commands for all banks of the device.

8. Issue 2 or more auto-refresh commands.

9. Issue a mode register set command with low to A8 to initialize device operation.
*1 Every "DLL enable" command resets DLL. Therefore sequence 6 can be skipped during power up.

Instead of it, the additional 200 cycles of clock input is required to lock the DLL after enabling DLL.

*2 Sequence of 6 & 7 is regardless of the order.

Power up & Initialization Sequence

Command

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

tRP

2 Clock min.

precharge
ALL Banks

2nd Auto

Refresh

Mode

Register Set

Any

Command

tRFC

1st Auto

Refresh

tRFC

min.200 Cycle

EMRS

MRS

2 Clock min.

DLL Reset

*1

*2

*1

2 Clock min.

∼

∼

∼

∼

∼

∼

∼

∼

∼

∼

∼

∼

∼

∼

∼

∼

precharge

ALL Banks

tRP

CK
CK

3.2 Basic Functionality

Figure 4. Power up and initialization sequence

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REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

3.2.2 Mode Register Definition

3.2.2.1 Mode Register Set(MRS)

The mode register stores the data for controlling the various operating modes of DDR SDRAM. It programs
CAS latency, addressing mode, burst length, test mode, DLL reset and various vendor specific options to make
DDR SDRAM useful for variety of different applications. The default value of the mode register is not defined,
therefore the mode register must be written after EMRS setting for proper DDR SDRAM operation. The mode
register is written by asserting low on CS, RAS, CAS, WE and BA0(The DDR SDRAM should be in all bank pre­charge with CKE already high prior to writing into the mode register). The states of address pins A0 ~ A11 in
the same cycle as CS, RAS, CAS, WE and BA0 going low are written in the mode register. Two clock cycles
are requested to complete the write operation in the mode register. The mode register contents can be
changed using the same command and clock cycle requirements during operation as long as all banks are in
the idle state. The mode register is divided into various fields depending on functionality. The burst length uses
A0 ~ A2, addressing mode uses A3, CAS latency(read latency from column address) uses A4 ~ A6. A7 is used
for test mode. A8 is used for DLL reset. A7 must be set to low for normal MRS operation. Refer to the table for
specific codes for various burst lengths, addressing modes and CAS latencies.

Address Bus

CAS Latency

A6 A5 A4 Latency

0 0 0 Reserved
0 0 1 Reserved
0 1 0 2
0 1 1 Reserved
1 0 0 Reserved
1 0 1 Reserved
1 1 0 2.5
1 1 1 Reserved

Burst Length

A2 A1 A0

Latency

Sequential Interleave

0 0 0 Reserve Reserve
0 0 1 2 2
0 1 0 4 4
0 1 1 8 8
1 0 0 Reserve Reserve
1 0 1 Reserve Reserve
1 1 0 Reserve Reserve
1 1 1 Reserve Reserve

A7 mode

0 Normal
1 Test

A3 Burst Type

0 Sequential
1 Interleave

* RFU(Reserved for future use)

should stay "0" during MRS

cycle.

A8 DLL Reset

0 No
1 Yes

Mode Register

BA1 BA0 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0

RFU TM CAS Latency BT Burst LengthRFU DLL 0

BA0 An ~ A0

0 (Existing)MRS Cycle
1 Extended Funtions(EMRS)

Figure 5. Mode Register Set

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128Mb DDR SDRAM

Mode Register Set

*1 : MRS can be issued only at all bank precharge state.
*2 : Minimum tRP is required to issue MRS command.

Command

20 1 53 4 86 7

tCK

2 Clock min.

Precharge

All Banks

Mode

Register Set

tRP

*2

*1

Any

Command

CK
CK

Burst Address Ordering for Burst Length

Burst

Length

Starting

Address(A2, A1, A0)

Sequential Mode Interleave Mode

2

xx0 0, 1 0, 1
xx1 1, 0 1, 0

4

x00 0, 1, 2, 3 0, 1, 2, 3
x01 1, 2, 3, 0 1, 0, 3, 2
x10 2, 3, 0, 1 2, 3, 0, 1
x11 3, 0, 1, 2 3, 2, 1, 0

8

000 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7
001 1, 2, 3, 4, 5, 6, 7, 0 1, 0, 3, 2, 5, 4, 7, 6
010 2, 3, 4, 5, 6, 7, 0, 1 2, 3, 0, 1, 6, 7, 4, 5
011 3, 4, 5, 6, 7, 0, 1, 2 3, 2, 1, 0, 7, 6, 5, 4
100 4, 5, 6, 7, 0, 1, 2, 3 4, 5, 6, 7, 0, 1, 2, 3
101 5, 6, 7, 0, 1, 2, 3, 4 5, 4, 7, 6, 1, 0, 3, 2
110 6, 7, 0, 1, 2, 3, 4, 5 6, 7, 4, 5, 2, 3, 0, 1
111 7, 0, 1, 2, 3, 4, 5, 6 7, 6, 5, 4, 3, 2, 1, 0

DLL Enable/Disable

The DLL must be enabled for normal operation. DLL enable is required during power-up initialization, and
upon returing to normal operation after having disabled the DLL for the purpose of debug or evaluation (upon
exiting Self Refresh Mode, the DLL is enabled automatically). Any time the DLL is enabled, 200 clock cycles
must occur before a READ command can be issued.

Output Drive Strength

The normal drive strength for all outputs is specified to be SSTL_2, Class II. Some vendors might also support
a weak driver strength option, intended for lighter load and/or point-to-point environments. I-V curves for the
normal drive strength and weak drive strength will be included in a future revision of this document.

Table 4. Burst address ordering for burst length

Figure 6. Mode Register Set sequence

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128Mb DDR SDRAM

3.2.2.2 Extended Mode Register Set(EMRS)

The extended mode register stores the data for enabling or disabling DLL, QFC and selecting output driver
size. The default value of the extended mode register is not defined, therefore the extened mode register must
be written after power up for enabling or disabling DLL. The extended mode register is written by asserting low
on CS, RAS, CAS, WE and high on BA0(The DDR SDRAM should be in all bank precharge with CKE already
high prior to writing into the extended mode register). The state of address pins A0 ~ A11 and BA1 in the
same cycle as CS, RAS, CAS and WE going low are written in the extended mode register. Two clock cycles
are required to complete the write operation in the extended mode register. The mode register contents can
be changed using the same command and clock cycle requirements during operation as long as all banks are
in the idle state. A0 is used for DLL enable or disable. "High" on BA0 is used for EMRS. All the other address
pins except A0 and BA0 must be set to low for proper EMRS operation. Refer to the table for specific codes.

Address Bus

RFU RFU : Must be set "0"

Extended Mode Register

DLL

BA1 BA0 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0

1

A0 DLL Enable

0 Enable
1 Disable

BA0 An ~ A0

0 (Existing)MRS Cycle
1 Extended Funtions(EMRS)

QFC control

0 Disable(Default)
1 Enable

Output Driver Impedence Control

0 Normal
1 Weak

QFC

D.I.C

Figure 7. Extend Mode Register set

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128Mb DDR SDRAM

3.2.3 Precharge

3.2.4 No Operation(NOP) & Device Deselect

The precharge command is used to precharge or close a bank that has been activated. The precharge com­mand is issued when CS, RAS and WE are low and CAS is high at the rising edge of the clock. The precharge
command can be used to precharge each bank respectively or all banks simultaneously. The bank select
addresses(BA0, BA1) are used to define which bank is precharged when the command is initiated. For write
cycle, tWR(min.) must be satisfied until the precharge command can be issued. After tRP from the precharge,
an active command to the same bank can be initiated.

A10/AP BA1 BA0 Precharge

0 0 0 Bank A Only
0 0 1 Bank B Only
0 1 0 Bank C Only
0 1 1 Bank D Only
1 X X All Banks

The device should be deselected by deactivating the CS signal. In this mode DDR SDRAM should ignore
all the control inputs. The DDR SDRAMs are put in NOP mode when CS is active and by deactivating RAS,
CAS and WE. For both Deselect and NOP the device should finish the current operation when this com­mand is issued.

Bank Selection for Precharge by Bank address bits

Table 5. Bank selection for precharge by Bank address bits

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3.2.5 Row Active

The Bank Activation command is issued by holding CAS and WE high with CS and RAS low at the rising
edge of the clock(CK). The DDR SDRAM has four independent banks, so two Bank Select addresses(BA0,
BA1) are required. The Bank Activation command must be applied before any Read or Write operation is exe­cuted. The delay from the Bank Activation command to the first read or write command must meet or exceed
the minimum of RAS to CAS delay time(tRCD min). Once a bank has been activated, it must be precharged
before another Bank Activation command can be applied to the same bank. The minimum time interval
between interleaved Bank Activation commands(Bank A to Bank B and vice versa) is the Bank to Bank delay
time(tRRD min).

Address

Command

RAS-CAS delay(tRCD)

Bank Activation Command Cycle (CAS Latency = 2)

Bank A

Row Addr.

Bank A

Col. Addr.

Bank A
Activate

Write A

with Auto

NOP

Precharge

RAS-RAS delay time(tRRD)

Bank B

Row Addr.

Bank A

Row. Addr.

Bank B

Activate

Bank A

Activate

NOP

ROW Cycle Time(tRC)

Tn Tn+1 Tn+2

20 1

: Don′t care

CK
CK

3.2.6 Read Bank

3.2.7 Write Bank

This command is used after the row activate command to initiate the burst read of data. The read command
is initiated by activating RAS, CS, CAS, and deasserting WE at the same clock sampling(rising) edge as
described in the command truth table. The length of the burst and the CAS latency time will be determined by
the values programmed during the MRS command.

This command is used after the row activate command to initiate the burst write of data. The write com­mand is initiated by activating RAS, CS, CAS, and WE at the same clock sampling(rising) edge as described in
the command truth table. The length of the burst will be determined by the values programmed during the
MRS command.

Figure 8. Bank activation command cycle timing

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3.3.1 Burst Read Operation

Burst Read operation in DDR SDRAM is in the same manner as the current SDRAM such that the Burst read
command is issued by asserting CS and CAS low while holding RAS and WE high at the rising edge of the
clock(CK) after tRCD from the bank activation. The address inputs (A0~A9) determine the starting address for
the Burst. The Mode Register sets type of burst(Sequential or interleave) and burst length(2, 4, 8). The first
output data is available after the CAS Latency from the READ command, and the consecutive data are pre­sented on the falling and rising edge of Data Strobe(DQS) adopted by DDR SDRAM until the burst length is
completed.

Command

< Burst Length=4, CAS Latency= 2, 2.5 >

READ A NOP NOP NOP NOPNOP NOP NOPNOP

DQS

DQ ′s

CAS Latency=2

Dout 0 Dout 1 Dout 2 Dout 3

DQS

DQ ′s

CAS Latency=2.5

Dout 0 Dout 1 Dout 2 Dout 3

20 1 53 4 86 7

t

RPRE

t

RPST

CK
CK

3.3 Essential Functionality for DDR SDRAM

The essential functionality that is required for the DDR SDRAM device is described in this chapter

Figure 9. Burst read operation timing

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3.3.2 Burst Write Operation

The Burst Write command is issued by having CS, CAS, and WE low while holding RAS high at the rising
edge of the clock(CK). The address inputs determine the starting column address. There is no write latency
relative to DQS required for burst write cycle. The first data of a burst write cycle must be applied on the DQ
pins tDS(Data-in setup time) prior to data strobe edge enabled after tDQSS from the rising edge of the
clock(CK) that the write command is issued. The remaining data inputs must be supplied on each subsequent
falling and rising edge of Data Strobe until the burst length is completed. When the burst has been finished, any
additional data supplied to the DQ pins will be ignored.

Figure 10. Burst write operation timing

1. The specific requirement is that DQS be valid(High or Low) on or before this CK edge. The case shown
(DQS going from High_Z to logic Low) applies when no writes were previously in progress on the bus.
If a previous write was in progress, DQS could be High at this time, depending on tDQSS.

*1

Command

< Burst Length=4 >

NOP WRITEA NOP NOP NOPWRITEB NOP NOPNOP

DQS

DQ ′s

Din 3

Din 0 Din 1 Din 2

tDQSSmax

20 1 53 4 86 7

t

WPRES*1

CK
CK

Din 3

Din 0 Din 1 Din 2

*1

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3.3.3 Read Interrupted by a Read

A Burst Read can be interrupted before completion of the burst by new Read command of any bank. When
the previous burst is interrupted, the remaining addresses are overridden by the new address with the full burst
length. The data from the first Read command continues to appear on the outputs until the CAS latency from
the interrupting Read command is satisfied. At this point the data from the interrupting Read command
appears. Read to Read interval is minimum 1 Clock.

Command

< Burst Length=4, CAS Latency=2 >

READ A READ B NOP NOP NOPNOP NOP NOPNOP

DQS

DQ ′s

CAS Latency=2

Dout A0 Dout A1 Dout B0 Dout B1 Dout B2 Dout B3

20 1 53 4 86 7

CK
CK

3.3.4 Read Interrupted by a Write & Burst Stop

To interrupt a burst read with a write command, Burst Stop command must be asserted to avoid data conten­tion on the I/O bus by placing the DQ’s(Output drivers) in a high impedance state. To insure the DQ’s are tri-
stated one cycle before the beginning the write operation, Burst stop command must be applied at least 2
clock cycles for CL=2 and at least 3 clock cycles for CL=2.5 before the Write command.

Command

< Burst Length=4, CAS Latency=2 >

READ Burst Stop NOP

WRITE

NOP

NOP

NOP NOPNOP

DQS

DQ ′s

CAS Latency=2

Dout 0 Dout 1 Din 0 Din 1 Din 2 Din 3

20 1 53 4 86 7
CK
CK

The following functionality establishes how a Write command may interrupt a Read burst.

1. For Write commands interrupting a Read burst, a Burst Terminate command is required to stop the read
burst and tristate the DQ bus prior to valid input write data. Once the Burst Terminate command has been
issued, the minimum delay to a Write command = RU(CL) [CL is the CAS Latency and RU means round up
to the nearest integer].

2. It is illegal for a Write command to interrupt a Read with autoprecharge command.

Figure 11. Read interrupted by a read timing

Figure 12. Read interrupted by a write and burst stop timing.

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3.3.5 Read Interrupted by a Precharge

A Burst Read operation can be interrupted by precharge of the same bank. The minimum 1 clock is required
for the read to precharge intervals. A precharge command to output disable latency is equivalent to the CAS
latency.

Command

< Burst Length=8, CAS Latency=2 >

READ NOP

Precharge

NOP NOPNOP NOP NOPNOP

DQS

DQ ′s

CAS Latency=2

Dout 0 Dout 1 Dout 2 Dout 3

Interrupted by precharge

20 1 53 4 86 7

Dout 4 Dout 5 Dout 6 Dout 7

1tCK

CK
CK

When a burst Read command is issued to a DDR SDRAM, a Precharge command may be issued to the same
bank before the Read burst is complete. The following functionality determines when a Precharge command
may be given during a Read burst and when a new Bank Activate command may be issued to the same bank.

1. For the earliest possible Precharge command without interrupting a Read burst, the Precharge command

may be given on the rising clock edge which is CL clock cycles before the end of the Read burst where CL
is the CAS Latency. A new Bank Activate command may be issued to the same bank after tRP (RAS
Precharge time).

2. When a Precharge command interrupts a Read burst operation, the Precharge command may be given on

the rising clock edge which is CL clock cycles before the last data from the interrupted Read burst where
CL is the CAS Latency. Once the last data word has been output, the output buffers are tristated. A new
Bank Activate command may be issued to the same bank after tRP.

3. For a Read with autoprecharge command, a new Bank Activate command may be issued to the same

bank after tRP where tRP begins on the rising clock edge which is CL clock cycles before the end of the
Read burst where CL is the CAS Latency. During Read with autoprecharge, the initiation of the internal
precharge occurs at the same time as the earliest possible external Precharge command would initiate a
precharge operation without interrupting the Read burst as described in 1 above.

4. For all cases above, tRP is an analog delay that needs to be converted into clock cycles. The number of

clock cycles between a Precharge command and a new Bank Activate command to the same bank equals
tRP/tCK (where tCK is the clock cycle time) with the result rounded up to the nearest integer number of
clock cycles. (Note that rounding to X.5 is not possible since the Precharge and Bank Activate commands

can only be given on a rising clock edge).
In all cases, a Precharge operation cannot be initiated unless tRAS(min) [minimum Bank Activate to Precharge
time] has been satisfied. This includes Read with autoprecharge commands where tRAS(min) must still be
satisfied such that a Read with autoprecharge command has the same timing as a Read command followed by
the earliest possible Precharge command which does not interrupt the burst.

Figure 13. Read interrupted by a precharge timing

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128Mb DDR SDRAM

3.3.6 Write Interrupted by a Write

A Burst Write can be interrupted before completion of the burst by a new Write command, with the only restric­tion that the interval that separates the commands must be at least one clock cycle. When the previous burst
is interrupted, the remaining addresses are overridden by the new address and data will be written into the
device until the programmed burst length is satisfied.

Command

< Burst Length=4 >

NOP WRITE A WRITE b NOP NOPNOP NOP NOPNOP

DQS

DQ ′s

Din A0 Din A1 Din B0 Din B1 Din B2 Din B3

1tCK

20 1 53 4 86 7

CK
CK

Figure 14. Write interrupted by a write timing

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128Mb DDR SDRAM

3.3.7 Write Interrupted by a Read & DM

A burst write can be interrupted by a read command of any bank. The DQ’s must be in the high impedance
state at least one clock cycle before the interrupting read data appear on the outputs to avoid data contention.
When the read command is registered, any residual data from the burst write cycle must be masked by DM.
The delay from the last data to read command (tCDLR) is required to avoid the data contention DRAM inside.
Data that are presented on the DQ pins before the read command is initiated will actually be written to the
memory. Read command interrupting write can not be issued at the next clock edge of that of write command.

Command

< Burst Length=8, CAS Latency=2 >

NOP WRITE NOP NOP READNOP NOP NOPNOP

DQS

DQ ′s

Din 0 Din 1 Din 2 Din 3 Din 4 Din 5

Dout 0 Dout 1 Dout 2

Din 6

Din 7

tCDLR

CAS Latency=2

tDQSSmax

DQS

DQ ′s

tCDLR

CAS Latency=2

tDQSSmin

Din 7Din 0 Din 1 Din 2 Din 3 Din 4 Din 5

Din 6

DM

Do

Dout 0 Dout 1 Dout 2 Do

2 0 1 5 3 4 8 6 7

t

WPRES*

5

t

WPRES*

5

CK
CK

The following function established how a Read command may interrupt a Write burst and which input data is
not written into the memory.

1. For Read commands interrupting a Write burst, the minimum Write to Read command delay is 2 clock

cycles. The case where the Write to Read delay is 1 clock cycle is disallowed

2. For Read commands interrupting a Write burst, the DM pin must be used to mask the input data words

whcich immediately precede the interrupting Read operation and the input data word which immediately
follows the interrupting Read operation

3. For all cases of a Read interrupting a Write, the DQ and DQS buses must be released by the driving chip

(i.e., the memory controller) in time to allow the buses to turn around before the DDR SDRAM drives them
during a read operation.

4. If input Write data is masked by the Read command, the DQS input is ignored by the DDR SDRAM.

5. Refer to "3.3.2 Burst write operation"

Figure 15. Write interrupted by a read and DM timing

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128Mb DDR SDRAM

3.3.8 Write Interrupted by a Precharge & DM

A burst write operation can be interrupted before completion of the burst by a precharge of the same bank.
Random column access is allowed. A write recovery time(tWR) is required from the last data to precharge
command. When precharge command is asserted, any residual data from the burst write cycle must be
masked by DM.

Command

< Burst Length=8 >

NOP WRITE A NOP NOP

Precharge

NOP NOP

NOP

WRITEB

DQS

DQ ′s

Dina0 Dina1 Dina2 Dina3 Dina4 Dina5 Dinb0Dina6 Dina7

tWR

DQS

DQ ′s

tDQSSmin

Dina7

Dina0 Dina1 Dina2 Dina3 Dina4 Dina5

Dina6

DM

Dinb0 Dinb1

tDQSSmax

2 0 1 5 3 4 8 6 7

CK
CK

Precharge timing for Write operations in DRAMs requires enough time to allow “write recovery” which is the
time required by a DRAM core to properly store a full “0” or “1” level before a Precharge operation. For DDR
SDRAM, a timing parameter, tWR, is used to indicate the required amount of time between the last valid write
operation and a Precharge command to the same bank.

The precharge timing for writes is a complex definition since the write data is sampled by the data strobe and
the address is sampled by the input clock. Inside the SDRAM, the data path is eventually synchronized with
the address path by switching clock domains from the data strobe clock domain to the input clock domain.
This makes the definition of when a precharge operation can be initiated after a write very complex since the
write recovery parameter must reference only the clock domain that is used to time the internal write operation,
i.e., the input clock domain.

tWR starts on the rising clock edge after the last possible DQS edge that strobed in the last valid data and
ends on the rising clock edge that strobes in the precharge command.

1. For the earliest possible Precharge command following a Write burst without interrupting the burst, the

minimum time for write recovery is defined by tWR.

2. When a precharge command interrupts a Write burst operation, the data mask pin, DM, is used to mask

input data during the time between the last valid write data and the rising clock edge on which the
Precharge command is given. During this time, the DQS input is still required to strobe in the state of DM.
The minimum time for write recovery is defined by tWR.

Figure 16. Write interrupted by a precharge and DM timing

t

WPRES*

5

t

WPRES*

5

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128Mb DDR SDRAM

3. For a Write with autoprecharge command, a new Bank Activate command may be issued to the same
bank after tWR+tRP where tWR+tRP starts on the falling DQS edge that strobed in the last valid data and
ends on the rising clock edge that strobes in the Bank Activate command. During write with
autoprecharge, the initiation of the internal precharge occurs at the same time as the earliest possible
external Precharge command without interrupting the Write burst as described in 1 above.

4. In all cases, a Precharge operation cannot be initiated unless tRAS(min) [minimum Bank Activate to
Precharge time] has been satisfied. This includes Write with autoprecharge commands where tRAS(min)
must still be satisfied such that a Write with autoprecharge command has the same timing as a Write
command followed by the earliest possible Precharge command which does not interrupt the burst.

5. Refer to "3.3.2 Burst write operation"

3.3.9 Burst Stop

The burst stop command is initiated by having RAS and CAS high with CS and WE low at the rising edge of
the clock(CK). The burst stop command has the fewest restrictions making it the easiest method to use when
terminating a burst read operation before it has been completed. When the burst stop command is issued dur­ing a burst read cycle, the pair of data and DQS(Data Strobe) go to a high impedance state after a delay which
is equal to the CAS latency set in the mode register. The burst stop command, however, is not supported dur­ing a write burst operation.

Command

< Burst Length=4, CAS Latency= 2, 2.5 >

READ A Burst Stop NOP NOP NOPNOP NOP NOPNOP

DQS

DQ ′s

CAS Latency=2

Dout 0 Dout 1

DQS

DQ ′s

CAS Latency=2.5

The burst ends after a delay equal to the CAS latency.

Dout 0 Dout 1

20 1 53 4 86 7

CK
CK

The Burst Stop command is a mandatory feature for DDR SDRAMs. The following functionality is required:

1. The BST command may only be issued on the rising edge of the input clock, CK.

2. BST is only a valid command during Read bursts.

3. BST during a Write burst is undefined and shall not be used.

4. BST applies to all burst lengths.

5. BST is an undefined command during Read with autoprecharge and shall not be used.

Figure 17. Burst stop timing

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128Mb DDR SDRAM

3.3.10 DM masking

The DDR SDRAM has a data mask function that can be used in conjunction with data write cycle, not read
cycle. When the data mask is activated (DM high) during write operation, DDR SDRAM does not accept the
corresponding data.(DM to data-mask latency is zero).
DM must be issued at the rising or falling edge of data strobe.

Command

< Burst Length=8 >

WRITE NOP NOP NOP NOPNOP NOP NOPNOP

DQS

DQ ′s Din 0

Din 1 Din 2 Din 3

tDQSS

DM

Din 4 Din 5 Din 6 Din7

masked by DM=H

20 1 53 4 86 7

CK
CK

6. When terminating a burst Read command, the BST command must be issued L

BST

(“BST Latency”) clock

cycles before the clock edge at which the output buffers are tristated, where L

BST

equals the CAS latency

for read operations. This is shown in previous page Figure with examples for CAS latency (CL) of 1.5, 2,

2.5, 3 and 3.5 (only selected CAS latencies are required by the DDR SDRAM standards, the others are
optional).

7. When the burst terminates, the DQ and DQS pins are tristated.

The BST command is not byte controllable and applies to all bits in the DQ data word and the(all) DQS pin(s).

Figure 18. DM masking timing

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128Mb DDR SDRAM

Command

< Burst Length=4, CAS Latency= 2, 2.5>

BANK A

NOP

READ A

NOP NOPNOP NOP NOPNOP

DQS

DQ ′s

CAS Latency=2

Dout 0 Dout 1 Dout 2 Dout 3

ACTIVE Auto Precharge

* Bank can be reactivated at the

tRP

completion of precharge

Begin Auto-Precharge

DQS

DQ ′s

CAS Latency=2.5

Dout 0 Dout 1 Dout 2 Dout 3

When the Read with Auto precharge command is issued, new command can be asserted at 3,4 and 5
respectively as follows,

Asserted

command

For same Bank For Different Bank

3 4 5 3 4 5

READ

READ +

No AP

*1

READ+

No AP

Illegal Legal Legal Legal

READ+AP

READ +

AP

READ +

AP

Illegal Legal Legal Legal

Active Illegal Illegal Illegal Legal Legal Legal

Precharge Legal Legal Illegal Legal Legal Legal

*1

: AP = Auto Precharge

20 1 53 4 86 7

t

RAS(min.)

CK
CK

3.3.11 Read With Auto Precharge

If a read with auto-precharge command is initiated, the DDR SDRAM automatically enters the precharge
operation BL/2 clock later from a read with auto-precharge command when tRAS(min) is satisfied. If not, the
start point of precharge operation will be delayed until tRAS(min) is satisfied. Once the precharge operation
has started the bank cannot be reactivated and the new command can not be asserted until the precharge
time(tRP) has been satisfied.

Figure 19. Read with auto precharge timing

Table 6. Operating description when new command asserted
while read with auto precharge is issued

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128Mb DDR SDRAM

3.3.12 Write with Auto Precharge

If A10 is high when write command is issued , the write with auto-precharge function is performed. Any new
command to the same bank should not be issued until the internal precharge is completed. The internal pre­charge begins after keeping tWR(min).

Command

< Burst Length=4 >

BANK A

NOP

WRITE A

NOP NOPNOP NOP NOPNOP

DQS

DQ ′s Din 0 Din 1 Din 2 Din 3

ACTIVE Auto Precharge

* Bank can be reactivated at

completion of tRP

tWR

t

RP

Internal precharge start

2 0 1 5 3 4 8 6 7

CK
CK

Figure 20. Write with auto precharge timing

Asserted

command

For same Bank For Different Bank

3 4 5 6 7 8 3 4 5 6 7

WRITE

WRITE+

No AP*1

WRITE+

No AP

WRITE+

No AP

Illegal Illegal Illegal Legal Legal Legal Legal Legal

WRITE+APWRITE+APWRITE+

AP

WRITE+

AP

Illegal Illegal Illegal Legal Legal Legal Legal Legal

READ Illegal

READ+NO

AP+DM

*2

READ+NO

AP+DM

READ+

NO AP

READ+

NO AP

Illegal Illegal Illegal Legal Legal Legal

READ+AP Illegal

READ +

AP+DM

READ +

AP+DM

READ + APREAD +

AP

Illegal Illegal Illegal Legal Legal Legal

Active Illegal Illegal Illegal Illegal Illegal Illegal Legal Legal Legal Legal Legal

Precharge Illegal Illegal Illegal Illegal Illegal Illegal Legal Legal Legal Legal Legal

*1

: AP = Auto Precharge

*2

: DM : Refer to " 3.3.7 Write Interrupted by a Read & DM " in page 25.

Burst length = 4

Table 7. Operating description when new command asserted
while write with auto precharge is issued

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3.3.13 Auto Refresh & Self Refresh

Auto Refresh

Command

CKE

PRE

tRP tRFC

Auto

= High

Refresh

CMD

An auto refresh command is issued by having CS, RAS and CAS held low with CKE and WE high at the ris­ing edge of the clock(CK). All banks must be precharged and idle for tRP(min) before the auto refresh com­mand is applied. No control of the external address pins is required once this cycle has started because of the
internal address counter. When the refresh cycle has completed, all banks will be in the idle state. A delay
between the auto refresh command and the next activate command or subsequent auto refresh command
must be greater than or equal to the tRFC(min).

∼

∼

∼

∼

∼

∼

CK
CK

Self Refresh

A self refresh command is defined by having CS, RAS, CAS and CKE held low with WE high at the rising
edge of the clock(CK). Once the self refresh command is initiated, CKE must be held low to keep the device in
self refresh mode. During the self refresh operation, all inputs except CKE are ignored. The clock is internally
disabled during self refresh operation to reduce power consumption. The self refresh is exited by supplying
stable clock input before returning CKE high, asserting deselect or NOP command and then asserting CKE
high for longer than tXSR for locking of DLL.

Command

CKE

tXSA

*1

Self

Refresh

∼

∼

∼

∼

∼

∼

∼

∼

∼

∼

∼

∼

∼

∼

CK
CK

∼

∼

∼

∼

∼

∼

Read

tXSR*

2

Figure 21. Auto refresh timing

Figure 22. Self refresh timing

Active

1. Exit self refresh to bank active command, a write command can be applied as far as tRCD is satisfied after
any bank active command.

2. Exit self refresh to read command

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REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

3.3.14 Power down

CKE

Precharge Active

Active

Read

power

down

Exit

Active
power

down

Entry

power

Entry

down

Precharge

Command

∼

∼

∼

∼

∼

∼

∼

∼

∼

∼

∼

∼

CK
CK

The power down mode is entered when CKE is low and exited when CKE is high. Once the power down
mode is initiated, all of the receiver circuits except clock, CKE and DLL circuit tree are gated off to reduce
power consumption. All banks should be in idle state prior to entering the precharge power down mode and
CKE should be set high at least 1tck+tIS prior to row active command . During power down mode, refresh
operations cannot be performed, therefore the device cannot be remained in power down mode longer than
the refresh period(Data retension time) of the device.

Figure 23. Power down entry and exit timing

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REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

4. Command Truth Table

(V=Valid, X=Don′t Care, H=Logic High, L=Logic Low)

COMMAND CKEn-1 CKEn CS RAS CAS WE BA0,1 A10/AP

A11,

A9 ~ A0

Note

Register Extended MRS H X L L L L OP CODE 1, 2
Register Mode Register Set H X L L L L OP CODE 1, 2

Refresh

Auto Refresh

H

H

L L L H X

3

Self
Refresh

Entry L 3

Exit L H

L H H H

X

3

H X X X 3
Bank Active & Row Addr. H X L L H H V Row Address
Read &

Column Address

Auto Precharge Disable

H X L H L H V

L

Column

Address

(A0~A9)

4

Auto Precharge Enable H 4

Write &
Column Address

Auto Precharge Disable

H X L H L L V

L

Column

Address

(A0~A9)

4

Auto Precharge Enable H 4, 6

Burst Stop H X L H H L X 7

Precharge

Bank Selection

H X L L H L

V L

X

All Banks X H 5

Active Power Down

Entry H L

H X X X

XL V V V

Exit L H X X X X

Precharge Power Down Mode

Entry H L

H X X X

X

L H H H

Exit L H

H X X X

L V V V

DM H X X 8

No operation (NOP) : Not defined H X

H X X X

X

9

L H H H 9

1. OP Code : Operand Code. A0 ~ A11 & BA0 ~ BA1 : Program keys. (@EMRS/MRS)

2.EMRS/ MRS can be issued only at all banks precharge state.
A new command can be issued 2 clock cycles after EMRS or MRS.

3. Auto refresh functions are same as the CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.

4. BA0 ~ BA1 : Bank select addresses.
If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected.
If both BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank B is selected.
If both BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank C is selected.
If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected.

5. If A10/AP is "High" at row precharge, BA0 and BA1 are ignored and all banks are selected.

6. During burst write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.

7. Burst stop command is valid at every burst length.

8. DM sampled at the rising and falling edges of the DQS and Data-in are masked at the both edges (Write DM latency is 0).

9. This combination is not defined for any function, which means "No Operation(NOP)" in DDR SDRAM.

Table 8. Command truth table

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REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

5. Functional Truth Table

Current State CS RAS CAS WE Address Command Action

PRECHARGE

STANDBY

L H H L X Burst Stop ILLEGAL*2
L H L X BA, CA, A10 READ/WRITE ILLEGAL*2
L L H H BA, RA Active Bank Active, Latch RA

L L H L BA, A10 PRE/PREA ILLEGAL*4
L L L H X Refresh AUTO-Refresh*5
L L L L Op-Code, Mode-Add MRS Mode Register Set*5

ACTIVE

STANDBY

L H H L X Burst Stop NOP
L H L H BA, CA, A10 READ/READA

Begin Read, Latch CA,
Determine Auto-Precharge

L H L L BA, CA, A10 WRITE/WRITEA

Begin Write, Latch CA,

Determine Auto-Precharge
L L H H BA, RA Active Bank Active/ILLEGAL*2
L L H L BA, A10 PRE/PREA Precharge/Precharge All
L L L H X Refresh ILLEGAL
L L L L Op-Code, Mode-Add MRS ILLEGAL

READ L H H L X Burst Stop Terminate Burst

L H L H BA, CA, A10 READ/READA

Terminate Burst, Latch CA,

Begin New Read, Determine

Auto-Precharge*3
L H L L BA, CA, A10 WRITE/WRITEA ILLEGAL
L L H H BA, RA Active Bank Active/ILLEGAL*2
L L H L BA, A10 PRE/PREA Terminate Burst, Precharge
L L L H X Refresh ILLEGAL
L L L L Op-Code, Mode-Add MRS ILLEGAL

Table 9-1. Functional truth table

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REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

Current State CS RAS CAS WE Address Command Action

WRITE L H H L X Burst Stop ILLEGAL

L H L H BA, CA, A10 READ/READA

Terminate Burst With DM=High,

Latch CA, Begin Read, Deter-

mine Auto-Precharge*3

L H L L BA, CA, A10 WRITE/WRITEA

Terminate Burst, Latch CA,

Begin new Write, Determine

Auto-Precharge*3
L L H H BA, RA Active Bank Active/ILLEGAL*2

L L H L BA, A10 PRE/PREA

Terminate Burst With DM=High,

Precharge
L L L H X Refresh ILLEGAL

L L L L Op-Code, Mode-Add MRS ILLEGAL

READ with

AUTO

PRECHARGE

*6

(READA)

L H H L X Burst Stop ILLEGAL
L H L H BA, CA, A10 READ/READA *6
L H L L BA, CA, A10 WRITE/WRITEA ILLEGAL
L L H H BA, RA Active *6
L L H L BA, A10 PRE/PREA *6
L L L H X Refresh ILLEGAL
L L L L Op-Code, Mode-Add MRS ILLEGAL

WRITE with

AUTO

RECHARGE

*7

(WRITEA)

L H H L X Burst Stop ILLEGAL
L H L H BA, CA, A10 READ/READA *7
L H L L BA, CA, A10 WRITE/WRITEA *7
L L H H BA, RA Active *7
L L H L BA, A10 PRE/PREA *7
L L L H X Refresh ILLEGAL
L L L L Op-Code, Mode-Add MRS ILLEGAL

Table 9-2. Functional truth table

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REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

Current State CS RAS CAS WE Address Command Action

PRECHARG-

ING

(DURING tRP)

L H H L X Burst Stop ILLEGAL*2
L H L X BA, CA, A10 READ/WRITE ILLEGAL*2
L L H H BA, RA Active ILLEGAL*2
L L H L BA, A10 PRE/PREA

NOP*4(Idle after tRP)

L L L H X Refresh ILLEGAL
L L L L Op-Code, Mode-Add MRS ILLEGAL

ROW

ACTIVATING
(FROM ROW

ACTIVE TO

tRCD)

L H H L X Burst Stop ILLEGAL*2
L H L X BA, CA, A10 READ/WRITE ILLEGAL*2

L L H H BA, RA Active ILLEGAL*2
L L H L BA, A10 PRE/PREA ILLEGAL*2
L L L H X Refresh ILLEGAL
L L L L Op-Code, Mode-Add MRS ILLEGAL

WRITE

RECOVERING

(DURING tWR

OR tCDLR)

L H H L X Burst Stop ILLEGAL*2
L H L H BA, CA, A10 READ ILLEGAL*2
L H L L BA, CA, A10 WRITE WRITE
L L H H BA, RA Active ILLEGAL*2
L L H L BA, A10 PRE/PREA ILLEGAL*2
L L L H X Refresh ILLEGAL
L L L L Op-Code, Mode-Add MRS ILLEGAL

Table 9-3. Functional truth table

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REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

Current State CS RAS CAS WE Address Command Action

RE-

FRESHING

L H H L X Burst Stop ILLEGAL
L H L X BA, CA, A10 READ/WRITE ILLEGAL
L L H H BA, RA Active ILLEGAL
L L H L BA, A10 PRE/PREA ILLEGAL
L L L H X Refresh ILLEGAL
L L L L Op-Code, Mode-Add MRS ILLEGAL

MODE

REGISTER

SETTING

L H H L X Burst Stop ILLEGAL
L H L X BA, CA, A10 READ/WRITE ILLEGAL

L L H H BA, RA Active ILLEGAL
L L H L BA, A10 PRE/PREA ILLEGAL
L L L H X Refresh ILLEGAL
L L L L Op-Code, Mode-Add MRS ILLEGAL

Table 9-4. Functional truth table

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REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

ABBREVIATIONS :

H=High Level, L=Low level, X=Don′t Care

Note :

1. All entries assume that CKE was High during the preceding clock cycle and the current clock cycle.

2. ILLEGAL to bank in specified state ; function may be legal in the bank indicated by BA, depending on the state of that bank.

3. Must satisfy bus contention, bus turn around and write recovery requirements.

4. NOP to bank precharging or in idle sate. May precharge bank indicated by BA.

5. ILLEGAL if any bank is not idle.

6. Refer to "3.3.11 Read with Auto Precharge" in page 29 for detailed information.

7. Refer to "3.3.12 Write with Auto Precharge" in page 30 for detailed information.

8. CKE Low to High transition will re-enable CK, CK and other inputs asynchronously. A minimum setup time must be satisfied
before issuing any command other than EXIT.

9. Power-Down and Self-Refresh can be entered only from All Bank Idle state.

ILLEGAL = Device operation and/or data integrity are not guaranteed.

Current State

CKE

n-1

CKE

n

CS RAS CAS WE Add Action

SELF-

REFRESHING

*8

L H H X X X X Exit Self-Refresh
L H L H H H X Exit Self-Refresh
L H L H H L X ILLEGAL
L H L H L X X ILLEGAL
L H L L X X

X

ILLEGAL

L L X X X X X NOPeration(Maintain Self-Refresh)

POWER

DOWN

L H

X X X X X Exit Power Down(Idle after tPDEX)

L L X X X X X NOPeration(Maintain Power Down)

ALL BANKS

IDLE

*9

H H X X X X X Refer to Function True Table
H L L L L H X Enter Self-Refresh
H L H X X X X Enter Power Down
H L L H H H X Enter Power Down
H L L H H L X ILLEGAL
H L L H L X X ILLEGAL
H L L L X X X ILLEGAL
L X X X X X X Refer to Current State=Power Down

ANY STATE

other than

listed above

H H X X X X X Refer to Function Truth Table

Table 9-5. Functional truth table

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REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

6. Absolute Maximum Rating

7. DC Operating Conditions & Specifications

7.1 DC Operating Conditions

Parameter Symbol Value Unit

Voltage on any pin relative to V

SS

VIN, V

OUT

-0.5 ~ 3.6 V

Voltage on VDD supply relative to V

SS

VDD, V

DDQ

-1.0 ~ 3.6 V

Voltage on V

DDQ

supply relative to V

SS

V

DDQ

-0.5 ~ 3.6 V

Storage temperature T

STG

-55 ~ +150 °C

Power dissipation P

D

1.0 W

Short circuit current I

OS

50 mA

Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommend operation condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability

Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 70°C)

Parameter Symbol Min Max Unit Note

Supply voltage(for device with a nominal VDD of 2.5V) VDD 2.3 2.7
I/O Supply voltage VDDQ 2.3 2.7 V
I/O Reference voltage VREF 0.49*VDDQ 0.51*VDDQ V 1
I/O Termination voltage(system) V

TT

VREF-0.04 VREF+0.04 V 2
Input logic high voltage VIH(DC) VREF+0.15 VDDQ+0.3 V
Input logic low voltage VIL(DC) -0.3 VREF-0.15 V
Input Voltage Level, CK and CK inputs VIN(DC) -0.3 VDDQ+0.3 V
Input Differential Voltage, CK and CK inputs VID(DC) 0.3 VDDQ+0.6 V 3
Input leakage current II -2 2 uA
Output leakage current IOZ -5 5 uA
Output High Current (V

OUT

= 1.95V) IOH -16.8 mA

Output Low Current (V

OUT

= 0.35V) IOL 16.8 mA

Notes 1. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the DC level of the same. Peak-to-

peak noise on VREF may not exceed 2% of the DC value

2.VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to
VREF, and must track variations in the DC level of VREF

3. VID is the magnitude of the difference between the input level on CK and the input level on CK.

Table 10. Absolute maximum ratings

Table 11. DC operating condition

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REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

7.2 DDR SDRAM SPEC Items and Test Conditions

Typical case: VDD = 2.5V, T = 25’C
Worst case : VDD = 2.7V, T = 10’C

Conditions Symbol Typical Worst
Operating current - One bank Active-Precharge;

tRC=tRCmin;tCK=100Mhz for DDR200, 133Mhz for DDR266A & DDR266B;
DQ,DM and DQS inputs changing twice per clock cycle;
address and control inputs changing once per clock cycle

IDD0 - -

Operating current - One bank operation ; One bank open, BL=4, Reads

- Refer to the following page for detailed test condition

IDD1 - -

Percharge power-down standby current; All banks idle; power - down mode;

CKE = <VIL(max); tCK=100Mhz for DDR200, 133Mhz for DDR266A & DDR266B;
Vin = Vref for DQ,DQS and DM

IDD2P - -

Precharge Floating standby current; CS# > =VIH(min);All banks idle;

CKE > = VIH(min); tCK=100Mhz for DDR200, 133Mhz for DDR266A & DDR266B;
Address and other control inputs changing once per clock cycle;
Vin = Vref for DQ,DQS and DM

IDD2F - -

Precharge Quiet standby current; CS# > = VIH(min); All banks idle;

CKE > = VIH(min); tCK = 100Mhz for DDR200, 133Mhz for DDR266A & DDR266B;
Address and other control inputs stable with keeping >= VIH(min) or =<VIL(max);
Vin = Vref for DQ ,DQS and DM

IDD2Q - -

Active power - down standby current ; one bank active; power-down mode;

CKE=< VIL (max); tCK = 100Mhz for DDR200, 133Mhz for DDR266A & DDR266B;
Vin = Vref for DQ,DQS and DM

IDD3P - -

Active standby current; CS# >= VIH(min); CKE>=VIH(min);

one bank active; active - precharge; tRC=tRASmax; tCK = 100Mhz for DDR200,
133Mhz for DDR266A & DDR266B; DQ, DQS and DM inputs changing twice
per clock cycle; address and other control inputs changing once
per clock cycle

IDD3N - -

Operating current - burst read; Burst length = 2; reads; continguous burst;

One bank active; address and control inputs changing once per clock cycle;
CL=2 at tCK = 100Mhz for DDR200, CL=2 at tCK = 133Mhz for DDR266A, CL=2.5 at tCK =
133Mhz for DDR266B ; 50% of data changing at every burst; lout = 0 m A

IDD4R - -

Operating current - burst write; Burst length = 2; writes; continuous burst;

One bank active address and control inputs changing once per clock cycle;
CL=2 at tCK = 100Mhz for DDR200, CL=2 at tCK = 133Mhz for DDR266A,
CL=2.5 at tCK = 133Mhz for DDR266B ; DQ, DM and DQS inputs changing twice
per clock cycle, 50% of input data changing at every burst

IDD4W - -

Auto refresh current; tRC = tRFC(min) - 8*tCK for DDR200 at 100Mhz,

10*tCK for DDR266A & DDR266B at 133Mhz; distributed refresh

IDD5 - -

Self refresh current; CKE =< 0.2V; External clock should be on;

tCK = 100Mhz for DDR200, 133Mhz for DDR266A & DDR266B

IDD6 - -

Orerating current - Four bank operation ; Four bank interleaving with BL=4

-Refer to the following page for detailed test condition

IDD7 - -

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REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

7.3 DDR SDRAM IDD spec table

32Mx4

16Mx8

Symbol

K4H280438B-TCA2

(DDR266A)

K4H280438B-TCB0

(DDR266B)

K4H280438B-TCA0

(DDR200)

Unit Notes

typical worst typical worst typical worst

IDD0 85 95 85 95 75 85 mA
IDD1 125 140 125 140 120 130 mA

IDD2P 21 25 21 25 18 22 mA

IDD2F 40 45 40 45 35 40 mA
IDD2Q 30 35 30 35 25 30 mA
IDD3P 25 30 25 30 20 25 mA
IDD3N 35 40 35 40 30 35 mA
IDD4R 140 155 140 155 115 130 mA

IDD4W 125 140 125 140 100 115 mA

IDD5 185 200 185 200 175 190 mA

IDD6 Normal 2 2 2 2 2 2 mA

Low power 1 1 1 1 1 1 mA Optional

IDD7 250 265 250 265 240 255 mA

Symbol

K4H280838BT-CA2

(DDR266A)

K4H280838B-TCB0

(DDR266B)

K4H280838B-TCA0

(DDR200)

Unit Notes

typical worst typical worst typical worst

IDD0 90 95 90 95 80 85 mA

IDD1 140 150 140 150 125 135 mA
IDD2P 21 25 21 25 19 23 mA
IDD2F 40 45 40 45 35 40 mA
IDD2Q 30 35 30 35 27 32 mA
IDD3P 25 30 25 30 20 25 mA
IDD3N 40 45 40 45 30 35 mA
IDD4R 150 165 150 165 125 140 mA

IDD4W 135 150 135 150 105 120 mA

IDD5 195 205 195 205 180 190 mA

IDD6 Normal 2 2 2 2 2 2 mA

Low power 1 1 1 1 1 1 mA Optional

IDD7 260 280 260 280 250 275 mA

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REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

8Mx16

Table 12. 128Mb DDR SDRAM IDD SPEC Table

Symbol

K4H281638B-TCA2

(DDR266A)

K4H281638B-TCB0

(DDR266B)

K4H281638B-TCA0

(DDR200)

Unit Notes

typical worst typical worst typical worst

IDD0 90 95 90 95 80 85 mA

IDD1 140 155 140 155 135 150 mA
IDD2P 21 25 21 25 20 24 mA
IDD2F 40 45 40 45 35 40 mA
IDD2Q 30 35 30 35 27 32 mA
IDD3P 25 30 25 30 20 25 mA
IDD3N 45 50 45 50 35 40 mA
IDD4R 210 245 210 245 155 175 mA

IDD4W 150 165 150 165 110 125 mA

IDD5 195 210 195 210 180 190 mA

IDD6 Normal 2 2 2 2 2 2 mA

Low power 1 1 1 1 1 1 mA Optional

IDD7 300 340 300 340 275 300 mA

< Detailed test conditions for DDR SDRAM IDD1 & IDD7 >

IDD1 : Operating current: One bank operation

1. Typical Case : Vdd = 2.5V, T=25’ C

2. Worst Case : Vdd = 2.7V, T= 10’ C

3. Only one bank is accessed with tRC(min), Burst Mode, Address and Control inputs on NOP edge are changing once
per clock cycle. lout = 0mA

4. Timing patterns

- DDR200(100Mhz, CL=2) : tCK = 10ns, CL2, BL=4, tRCD = 2*tCK, tRAS = 5*tCK
Read : A0 N R0 N N P0 N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst

- DDR266B(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 5*tCK
Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst

- DDR266A (133Mhz, CL=2) : tCK = 7.5ns, CL=2, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 5*tCK
Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst

Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP

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128Mb DDR SDRAM

8. AC Operating Conditions & Timming Specification

8.1 AC Operating Conditions

Parameter/Condition Symbol Min

Max

Unit Note

Input High (Logic 1) Voltage, DQ, DQS and DM signals VIH(AC) VREF + 0.31 V 1
Input Low (Logic 0) Voltage, DQ, DQS and DM signals. VIL(AC) VREF - 0.31 V 2
Input Differential Voltage, CK and CK inputs VID(AC) 0.62 VDDQ+0.6 V 3
Input Crossing Point Voltage, CK and CK inputs VIX(AC) 0.5*VDDQ-0.2 0.5*VDDQ+0.2 V 4

Note 1. Vih(max) = 4.2V. The overshoot voltage duration is ≤ 3ns at VDD.

2. Vil(min) = -1.5V. The undershoot voltage duration is ≤ 3ns at VSS.

3. VID is the magnitude of the difference between the input level on CK and the input on CK.

4. The value of VIX is expected to equal 0.5*V

DDQ

of the transmitting device and must track variations in the DC level of the same.

Table 13. AC operating conditions

IDD7 : Operating current: Four bank operation

1. Typical Case : Vdd = 2.5V, T=25’ C

2. Worst Case : Vdd = 2.7V, T= 10’ C

3. Four banks are being interleaved with tRC(min), Burst Mode, Address and Control inputs on NOP edge are not
changing. lout = 0mA

4. Timing patterns

- DDR200(100Mhz, CL=2) : tCK = 10ns, CL2, BL=4, tRRD = 2*tCK, tRCD= 3*tCK, Read with autoprecharge
Read : A0 N A1 R0 A2 R1 A3 R2 A0 R3 A1 R0 - repeat the same timing with random address changing
*50% of data changing at every burst

- DDR266B(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRRD = 2*tCK, tRCD = 3*tCK
Read with autoprecharge
Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing
*50% of data changing at every burst

- DDR266A (133Mhz, CL=2) : tCK = 7.5ns, CL2=2, BL=4, tRRD = 2*tCK, tRCD = 3*tCK
Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing
*50% of data changing at every burst

Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP

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REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

8.2 AC Timming Parameters & Specifications

Parameter Symbol

K4H281638B

-TCA2 (DDR266A)

K4H281638B

-TCB0 (DDR266B)

K4H281638B

-TCA0 (DDR200)

Unit Note

Min Max Min Max Min Max

Row cycle time tRC 65 65 70 ns
Refresh row cycle time tRFC 75 75 80 ns
Row active time tRAS 45 120K 45 120K 48 120K ns
RAS to CAS delay tRCD 20 20 20 ns
Row precharge time tRP 20 20 20 ns
Row active to Row active delay tRRD 15 15 15 ns
Write recovery time tWR 2 2 2 tCK
Last data in to Read command tCDLR 1 1 1 tCK
Col. address to Col. address delay tCCD 1 1 1 tCK
Clock cycle time CL=2.0 tCK 7.5 15 10 15 10 15 ns

CL=2.5 15 7.5 15 15 ns

Clock high level width tCH

0.45 0.55 0.45 0.55 0.45 0.55 tCK

Clock low level width tCL 0.45 0.55 0.45 0.55 0.45 0.55 tCK
DQS-out access time from CK/CK tDQSCK -0.75 +0.75 -0.75 +0.75 -0.8 +0.8 ns
Output data access time from CK/CK tAC -0.75 +0.75 -0.75 +0.75 -0.8 +0.8 ns
Data strobe edge to ouput data edge tDQSQ - +0.5 - +0.5 - +0.6 ns
Read Preamble tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 tCK
Read Postamble tRPST 0.4 0.6 0.4 0.6 0.4 0.6 tCK
Data out high impedence time from CK/CK tHZQ -0.75 +0.75 -0.75 +0.75 -0.8 +0.8 ns 2
CK to valid DQS-in tDQSS 0.75 1.25 0.75 1.25 0.75 1.25 tCK
DQS-in setup time tWPRES 0 0 0 ns 3
DQS-in hold time tWPREH 0.25 0.25 0.25 tCK
DQS-in high level width tDQSH 0.4 0.6 0.4 0.6 0.4

0.6 tCK
DQS-in low level width tDQSL 0.4 0.6 0.4 0.6 0.4 0.6 tCK
DQS-in cycle time tDSC 0.9 1.1 0.9 1.1 0.9 1.1 tCK

Address and Control Input setup time tIS 0.9 0.9 1.1 ns
Address and Control Input hold time tIH 0.9 0.9 1.1 ns
Mode register set cycle time tMRD 15 15 16 ns
DQ & DM setup time to DQS tDS 0.5 0.5 0.6 ns
DQ & DM hold time to DQS tDH

0.5 0.5 0.6

ns

DQ & DM input pulse width tDIPW 1.75 1.75 2 ns
Power down exit time tPDEX 10 10 10 ns
Exit self refresh to write command tXSW 95 116 ns

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128Mb DDR SDRAM

Table 14. AC timing parameters and specifications

1. Maximum burst refresh of 8

2. tHZQ transitions occurs in the same access time windows as valid data transitions. These parameters are not referenced
to a specific voltage level, but specify when the device output is no longer driving.

3. The specific requirement is that DQS be valid(High or Low) on or before this CK edge. The case shown(DQS going from
High_Z to logic Low) applies when no writes were previously in progress on the bus. If a previous write was in progress,
DQS could be High at this time, depending on tDQSS.

4. The maximum limit for this parameter is not a device limit. The device will operate with a great value for this parameter,
but system performance (bus turnaround) will degrade accordingly.

5. The value of tQCSW min. is 1.25ns from the last low going data strobe edge to QFC high. And the value of
tQCSW max. is 0.5tcK from the first high going clock edge after the last low going data strobe edge to QFC
high.

6. the value of tQCSWI max. is 1.5tcK from the first high going clock edge after the last low going data strobe
edge to QFC high.

7. A write command can be applied with tRCD satisfied after this command.

Parameter Symbol

-A2(PC266@CL=2)

-B0(PC266@CL=2.5) -A0(PC200@CL=2)
Unit Note

Min Max Min Max Min Max

Exit self refresh to bank active command tXSA 75 75 80 ns 7
Exit self refresh to read command tXSR 200 200 200 Cycle
Refresh interval time 64Mb, 128Mb

tREF

15.6 15.6 15.6 us 1

256Mb 7.8 7.8 7.8 us 1

Output DQS valid window tQH

tHPmin

-0.75ns

-

tHPmin

-0.75ns

-

tHPmin

-1.0ns

- ns

Clock half period tHP

tCLmin

or tCHmin

-

tCLmin

or tCHmin

-

tCLmin

or tCHmin

- ns

DQS write postamble time tWPST 0.25 0.25 0.25 tCK 4
QFC setup to first DQS edge on reads tQCS

0.9 1.1 0.9 1.1 0.9 1.1 tCK

QFC hold after last DQS edge on reads tQCH

0.4 0.6 0.4 0.6 0.4 0.6 tCK

Write command to QFC delay on write tQCSW

4.0 4.0 4.0 ns
Write burst end to QFC delay on write tQCHW 1.25ns 0.5tCK 1.25ns 0.5tCK 1.25ns 0.5tCK 5
Write burst end to QFC delay on write

interrupted by Precharge

tQCHWI - 1.5tCK - 1.5tCK - 1.5tCK 6

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128Mb DDR SDRAM

9. AC Operating Test Conditions

(VDD=2.5V, VDDQ=2.5V, TA= 0 to 70°C)

Parameter Value Unit Note

Input reference voltage for Clock 0.5 * VDDQ V
Input signal maximum peak swing 1.5 V
Input signal minimum slew rate 1.0 V/ns
Input Levels(VIH/VIL) VREF+0.31/VREF-0.31 V
Input timing measurement reference level VREF V
Output timing measurement reference level Vtt V
Output load condition See Load Circuit

10. Input/Output Capacitance

(VDD=2.5, VDDQ=2.5V, TA= 25°C , f=1MHz)

Parameter Symbol Min Max Delta Cap(max) Unit

Input capacitance
(A0 ~ A11, BA0 ~ BA1, CKE, CS, RAS,CAS, WE)

CIN1 2 3.0 0.5 pF

Input capacitance( CK, CK ) CIN2 2 3.0 0.25 pF
Data & DQS input/output capacitance COUT 4.0 5.0

0.5

pF

Input capacitance(DM) CIN3 4.0 5.0 pF

Table 15. AC operating test conditions

Table 16. Input/output capacitance

Figure 24. Output Load Circuit (SSTL_2)

Output

Z0=50Ω

CLOAD=30pF

VREF
=0.5*VDDQ

RT=50Ω

Vtt=0.5*VDDQ

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128Mb DDR SDRAM

11. IBIS: I/V Characteristics for Input and Output Buffers

Figure 25. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)

11.1 Normal strength driver

1. The nominal pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.

2. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines the of the V-I curve of Figure a.

3. The nominal pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.

4. The Full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines of the V-I curve of Figrue b.

5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device drain to source
voltage from 0 to VDDQ/2

6. The Full variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain to source voltages
from 0 to VDDQ/2

Maximum

Typical High

Minumum

Vout(V)

Iout(mA)

-220

-200

-180

-160

-140

-120

-100

-80

-60

-40

-20

0

0.0 0.5 1.0 1.5 2.0 2.5

Minimum

Typical Low

Typical High

Maximum

0

20

40

60

80

100

120

140

160

0.0 0.5 1.0 1.5 2.0 2.5

Iout(mA)

Typical Low

Vout(V)

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REV. 1.0 November. 2. 2000

128Mb DDR SDRAM

Table 17. Pull down and pull up current values

Temperature (Tambient)

Typical 25°C
Minimum 70°C
Maximum 0°C

Vdd/Vddq

Typical

2.5V
Minimum 2.3V
Maximum 2.7V

The above characteristics are specified under best, worst and normal process variation/conditions

Pulldown Current (mA) pullup Current (mA)

Voltage

(V)

Typical

Low

Typical

High

Minimum Maximum

Typical

Low

Typical

High

Minimum Maximum

0.1 6.0 6.8 4.6 9.6 -6.1 -7.6 -4.6 -10.0

0.2 12.2 13.5 9.2 18.2 -12.2 -14.5 -9.2 -20.0

0.3 18.1 20.1 13.8 26.0 -18.1 -21.2 -13.8 -29.8

0.4 24.1 26.6 18.4 33.9 -24.0 -27.7 -18.4 -38.8

0.5 29.8 33.0 23.0 41.8 -29.8 -34.1 -23.0 -46.8

0.6 34.6 39.1 27.7 49.4 -34.3 -40.5 -27.7 -54.4

0.7 39.4 44.2 32.2 56.8 -38.1 -46.9 -32.2 -61.8

0.8 43.7 49.8 36.8 63.2 -41.1 -53.1 -36.0 -69.5

0.9 47.5 55.2 39.6 69.9 -41.8 -59.4 -38.2 -77.3

1.0 51.3 60.3 42.6 76.3 -46.0 -65.5 -38.7 -85.2

1.1 54.1 65.2 44.8 82.5 -47.8 -71.6 -39.0 -93.0

1.2 56.2 69.9 46.2 88.3 -49.2 -77.6 -39.2 -100.6

1.3 57.9 74.2 47.1 93.8 -50.0 -83.6 -39.4 -108.1

1.4 59.3 78.4 47.4 99.1 -50.5 -89.7 -39.6 -115.5

1.5 60.1 82.3 47.7 103.8 -50.7 -95.5 -39.9 -123.0

1.6 60.5 85.9 48.0 108.4 -51.0 -101.3 -40.1 -130.4

1.7 61.0 89.1 48.4 112.1 -51.1 -107.1 -40.2 -136.7

1.8 61.5 92.2 48.9 115.9 -51.3 -112.4 -40.3 -144.2

1.9 62.0 95.3 49.1 119.6 -51.5 -118.7 -40.4 -150.5

2.0 62.5 97.2 49.4 123.3 -51.6 -124.0 -40.5 -156.9

2.1 62.9 99.1 49.6 126.5 -51.8 -129.3 -40.6 -163.2

2.2 63.3 100.9 49.8 129.5 -52.0 -134.6 -40.7 -169.6

2.3 63.8 101.9 49.9 132.4 -52.2 -139.9 -40.8 -176.0

2.4 64.1 102.8 50.0 135.0 -52.3 -145.2 -40.9 -181.3

2.5 64.6 103.8 50.2 137.3 -52.5 -150.5 -41.0 -187.6

2.6 64.8 104.6 50.4 139.2 -52.7 -155.3 -41.1 -192.9

2.7 65.0 105.4 50.5 140.8 -52.8 -160.1 -41.2 -198.2

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128Mb DDR SDRAM

Figure 26. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)

11.2 Half strength driver

5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device drain to source
voltage from 0 to VDDQ/2

6. The Full variation in the ratio of the nominal pullup to pulldown current should be unity ±10%, for device drain to source voltages
from 0 to VDDQ/2

Maximum

Typical High

Minumum

Vout(V)

Iout(mA)

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

0.0 0.5 1.0 1.5 2.0 2.5

Iout(mA)

Minimum

Typical Low

Typical High

Maximum

0

10

20

30

40

50

60

70

80

90

0.0 1.0 2.0

Iout(mA)

Typical Low

1. The nominal pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a.

2. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines the of the V-I curve of Figure a.

3. Thenominal pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b.

4. The Full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within the outer
bounding lines of the V-I curve of Figrue b.

Vout(V)

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128Mb DDR SDRAM

Temperature (Tambient)

Typical 25°C
Minimum 70°C
Maximum 0°C

Vdd/Vddq

Typical

2.5V
Minimum 2.3V
Maximum 2.7V

The above characteristics are specified under best, worst and normal process variation/conditions

Pulldown Current (mA) pullup Current (mA)

Voltage

(V)

Typical

Low

Typical

High

Minimum Maximum

Typical

Low

Typical

High

Minimum Maximum

0.1 3.4 3.8 2.6 5.0 -3.5 -4.3 -2.6 -5.0

0.2 6.9 7.6 5.2 9.9 -6.9 -8.2 -5.2 -9.9

0.3 10.3 11.4 7.8 14.6 -10.3 -12.0 -7.8 -14.6

0.4 13.6 15.1 10.4 19.2 -13.6 -15.7 -10.4 -19.2

0.5 16.9 18.7 13.0 23.6 -16.9 -19.3 -13.0 -23.6

0.6 19.6 22.1 15.7 28.0 -19.4 -22.9 -15.7 -28.0

0.7 22.3 25.0 18.2 32.2 -21.5 -26.5 -18.2 -32.2

0.8 24.7 28.2 20.8 35.8 -23.3 -30.1 -20.4 -35.8

0.9 26.9 31.3 22.4 39.5 -24.8 -33.6 -21.6 -39.5

1.0 29.0 34.1 24.1 43.2 -26.0 -37.1 -21.9 -43.2

1.1 30.6 36.9 25.4 46.7 -27.1 -40.3 -22.1 -46.7

1.2 31.8 39.5 26.2 50.0 -27.8 -43.1 -22.2 -50.0

1.3 32.8 42.0 26.6 53.1 -28.3 -45.8 -22.3 -53.1

1.4 33.5 44.4 26.8 56.1 -28.6 -48.4 -22.4 -56.1

1.5 34.0 46.6 27.0 58.7 -28.7 -50.7 -22.6 -58.7

1.6 34.3 48.6 27.2 61.4 -28.9 -52.9 -22.7 -61.4

1.7 34.5 50.5 27.4 63.5 -28.9 -55.0 -22.7 -63.5

1.8 34.8 52.2 27.7 65.6 -29.0 -56.8 -22.8 -65.6

1.9 35.1 53.9 27.8 67.7 -29.2 -58.7 -22.9 -67.7

2.0 35.4 55.0 28.0 69.8 -29.2 -60.0 -22.9 -69.8

2.1 35.6 56.1 28.1 71.6 -29.3 -61.2 -23.0 -71.6

2.2 35.8 57.1 28.2 73.3 -29.5 -62.4 -23.0 -73.3

2.3 36.1 57.7 28.3 74.9 -29.5 -63.1 -23.1 -74.9

2.4 36.3 58.2 28.3 76.4 -29.6 -63.8 -23.2 -76.4

2.5 36.5 58.7 28.4 77.7 -29.7 -64.4 -23.2 -77.7

2.6 36.7 59.2 28.5 78.8 -29.8 -65.1 -23.3 -78.8

2.7 36.8 59.6 28.6 79.7 -29.9 -65.8 -23.3 -79.7

Table 18. Pull down and pull up current values

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128Mb DDR SDRAM

12. QFC function

when drive low on reads coincident with the start of DQS, this DRAM output signal says that one cycle later
there will be the first valid DQS output and returned to HI-Z after this finishing a burst operation. It is also
driven low shortly after a write command is received and returned to HI-Z shortly after the last data strobe
transition is received. Whenever the device is in standby, the signal is HI-Z. DQS is intended to enable an
external data switch. QFC can be enabled or disabled through EMRS control.

QFC timing on Read operation

QFC on reads is enabled coincident with the start of DQS preamble, and disabled coincident with the end of
DQS postamble

Command

20 1 53 4 86 7

Read

Dout 0 Dout 1

Hi-Z

DQS

DQ’S

QFC

t

QCS

t

QCH

CL = 2, BL = 2

CK
CK

QFC definition

Figure 26. QFC timing on read operation

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128Mb DDR SDRAM

QFC timing on Write operation

QFC on writes is enabled as soon as possible after the clock edge of write command and disabled as soon
as possible after the last DQS-in low going edge.

20 1 53 4 86 7

Hi-Z

DQS@tDQSSmax

QFC

tQCSW

*1

tQCHW min.

Dout 0 Dout 1

BL = 2

Write

DQ’S@tDQSSmax

Command

CK
CK

DQS@tDQSSmin

DQ’S@tDQSSmin

20 1 53 4 86 7

Hi-Z

QFC

tQCSW

*1

tQCHW min.

Dout 0 Dout 1

BL = 2

Write

Command

CK
CK

Figure 27. : QFC timing on write operation with tDQSSmax

Figure 28. : QFC timing on write operation with tDQSSmin

*2

tQCHW max.

*2

tQCHW max.

1. The value of tQCSW min. is 1.25ns from the last low going data strobe edge to QFC tri-state.

2. The value of tQCSW max. is 0.5tcK from the first high going clock edge after the last low going data strobe
edge to QFC tri-state.

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128Mb DDR SDRAM

QFC timing example for interrupted Writes operation

DQS

DQ’S

20 1 53 4 86 7

Hi-Z

QFC

tQCSW

Dout 0 Dout 1

Write

Command

CK
CK

Figure 29. : QFC timing example for Interrupted writes operation

tQCHWI max

Precharge

Dout 2

Dout 3

BL = 8