Datasheet K3413-02, K3413-01, K1713-02, K1713-01 Datasheet (HAMAMATSU)

UV TO IR DETECTOR

g

g

g

y

)

)

)

)

Two-color detector

K1713/K3413-01

,

-02

Broad spectral response range from UV through IR

K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared
detector element. This structure allows you to design instruments using the same optical path from UV through IR.

Features

l

Broad spectral response
Suitable for spectrophotometers, flame monitors, etc.

l

Noncooled type:
Room temperature operation for easy handling

One-stage thermoelectrically cooled type:
Keeps the detector temperature at a constant level to
make high-precision measurements.

■

General ratings / Absolute maximum ratings

Dimensi onal

Type No.

K1713-01

K1713-02

K3413-01

K3413-02

outline/

Window

1

material

*

➀

/S TO-5

➁

/S TO-8

Package CoolingDetector

Non-

cooled

One-sta
TE-cooled

e

Si 2.4 × 2.4 5

PbS 1.8 × 1.8 100 *

Si 2.4 × 2.4 5

PbSe 1.8 × 1.8

Si 2.4 × 2.4 5

PbS 1.8 × 1.8 100 *

Si 2.4 × 2.4 5

PbSe 1.8 × 1.8

Applications

l

Spectrophotometers

l

Laser monitors

l

Flame monitors

l

Radiation thermometers

Accessories (Optional)

l

Heatsink for thermoelectrically cooled type A3179-03

l

Temperature controller for thermoelectrically cooled type

l

Photosensor amplifier C2719

l

Amplifier for PbS and PbSe detectors C3757-02

Absolute maximum ratings

Active

area size

(mm) (mW) (A) (V) (°C) (°C)

Thermistor

allowable

dissipation

0.2 1.5

TE-cooler

allowable

current

--

Reverse

volta

V

100 *

100 *

Operating

temper ature

e

R

Topr

2

2

-30 to +50 -55 to +50

2

2

temper ature

C1103-04

Storage

Tstg

■

Electrical and optical characteristics (Typ., unless otherwise noted)

Type No. Detector

K1713-01

K1713-02

K3413-01

K3413-02

*1: Window material S: sapphire glass
*2: Maximum supply voltage
*3: Light source 500 K black body Supply voltage: 15 V

Chopping frequency: 600 Hz, Load resistance: nearly equal to element dark resistance

Noise bandwidth: 60 Hz Input energy: 4.8 µW/cm
*4: l=655 nm
*5: 0 to 63 %

Si 0.94 0.45 300 1.4 × 10

PbS

Si 0.94 0.45 300 1.4 × 10

PbSe

Si 25 0.94 0.45 300 1.4 × 10

PbS -10 2.4 3 × 105 (V/W

Si 25 0.94 0.45 300 1.4 × 10

PbSe -10 4.1 1.5 × 103 (V/W

Measurement

condition

Element

temperature

T

(°C) (µm) (A/W)

25

25

sensitivity

wavelen

Peak

l

p

2.2 6 × 104 (V/W

4.0 5 × 102 (V/W

Photo sensitivit

th

S

l=l

p

2

(PbSe: 16.7 µW /cm2)

Shunt resistance

or

dark resistance

(MW)

0.2 to 2 5 × 10

0.5 to 1.8 5 × 108 *

0.5 to 10 1 × 10

1.5 to 5 1 × 109 *

(cm · Hz

D*

l=l

p

1/2

10 *3

11 *3

/W)

13

13

3

13

13

3

Rise time

tr

=0 V

R

V

W

=1 k

R

L

10 to 90 %

(µs)

4

0.2 *

200 Max. *

600 Max. *

0.2 *

3 Max. *

0.2 *

0.2 *

5 Max. *

4

4

4

5

5

5

5

1

■ Spectral response

(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)

VOLTAGE (V)

0

0

1.20.4 0.8 1.00.2 0.6

1.0

0.4

1.6

0.6

0.2

1.4

0.8

1.2

CURRENT (A)

14

10

1

2

13

10

λ

D* (cm · Hz /W)

12

10

0.2

PbSe photoconductive detector

100

80

Two-color detector

K1713/K3413-01, -02

Si photodiode PbS photoconductive detector

WAVELENGTH (µm)

(Typ. Ta=25 ˚C)

(Typ. Ta=25 ˚C)

1.20.4 0.6 0.8 1.0

KIRDB0058EE

100

80

60

40

RELATIVE VALUE (%)

20

0

1

WAVELENGTH (µm)

(Typ. Ta=25 ˚C)

T= -10 ˚C

T=25 ˚C

3.51.5 2 2.5 3

KIRDB0282EA

60

40

RELATIVE VALUE (%)

20

0

1

T= -10 ˚C

T=25 ˚C

45231.5 4.5 5.52.5 3.5

WAVELENGTH (µm)

■ Cooling characteristics of TE-cooler

(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)

30

20

10

0

-10

-20

-30

ELEMENT TEMPERATURE (˚C)

-40

-50
0

CURRENT (A)

KIRDB0283EA

■ Current vs. voltage characteristics of TE-cooler

1.61.2 1.40.4 0.8 1.00.2 0.6

2

KIRDB0276EA

KIRDB0277EA

Two-color detector

K1713/K3413-01, -02

■ Thermistor temperature characteristic

6

10

5

10

4

10

RESISTANCE (Ω)

3

10

-40

ELEMENT TEMPERATURE (˚C)

(Typ.)

30-20 10 20-30 -10 0

KIRDB0278EA

■ Dimensional outline (unit: mm)

➀ K1713-01, -02 ➁ K3413-01, -02

Si

PbS
PbSe

0.4
LEAD

9.2 ± 0.3

8.1 ± 0.2

WINDOW

5.5 ± 0.2

5.1 ± 0.2

3.3 ± 0.2

4.3 ± 0.2

Si (N)
Si (P)
PbS, PbSe
PbS, PbSe

6.1 ± 0.2

30 MIN.

15.3 ± 0.2

14 ± 0.2

WINDOW

10 ± 0.2

Si SAPPHIRE GLASS

PbS
PbSe

0.45
LEAD

6.1 ± 0.2

5.1 ± 0.2

10.0 ± 0.212 MIN.

10.2 ± 0.2

PbS, PbSe
PbS, PbSe
TE-COOLER (-)
TE-COOLER (+)
THERMISTOR
Si (-)
Si (+)

5.1 ± 0.2

KIRDA0041EE KIRDA0043ED

NC

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.

HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: [phone], Fax: [phone], http://www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: [phone], Fax: [phone]
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: [phone], Fax: [phone]
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: [phone], Fax: [phone]
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: [phone], Fax: [phone]
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: [phone], Fax: [phone]
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: [phone], Fax: [phone]

Cat. No. KIRD1029E04

Dec. 2002 DN

3