Datasheet K2623T#480, K2623T#520 Datasheet (Westcode Semiconductors)

Date:- 25 Feb, 2004

WESTCODE

An

Absolute Maximum Ratings

V

DRM

V

DSM

V

RRM

V

RSM

I

T(AV)M

I

T(AV)M

I

T(AV)M

I

T(RMS)

I

T(d.c.)

I

TSM

I

TSM2

I2tI

I2t

(di/dt)

V

RGM

P

G(AV)

P

GM

T

j op

T

stg

IXYS

Company

Medium Voltage Thyristor

Types K2623T#480 to K2623T#520

Old Type No.: R1263CH45-52

VOLTAGE RATINGS

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

OTHER RATINGS

Maximum average on-state current, T

Maximum average on-state current. T

Maximum average on-state current. T

Nominal RMS on-state current, T

D.C. on-state current, T

Peak non-repetitive surge tp=10ms, Vrm=0.6V

Peak non-repetitive surge tp=10ms, V

2

t capacity for fusing tp=10ms, Vrm=0.6V

2

I

t capacity for fusing tp=10ms, V

Critical rate of rise of on-state current (repetitive), (Note 6)

cr

Critical rate of rise of on-state current (non-repetitive), (Note 6)

Peak reverse gate voltage

Mean forward gate power

Peak forward gate power

Operating temperature range

Storage temperature range

=25°C, (note 4)

sink

rm

=55°C, (note 2)

sink

=85°C, (note 2)

sink

=85°C, (note 3)

sink

=25°C, (note 2)

sink

≤

10V, (note 5)

rm

RRM

≤

10V, (note 5)

, (note 5)

RRM

, (note 5)

Data Sheet Issue:- 1

MAXIMUM

LIMITS

4800-5200

4800-5200

4800-5200

4900-5300

MAXIMUM

LIMITS

2623

1819

1117

5150

4532

27

30

3.65×10

4.50×10

-40 to +125

-40 to +150

6

6

300

600

5

4

30

UNITS

V

V

V

V

UNITS

A

A

A

A

A

kA

kA

A2s

A2s

A/µs

A/µs

V

W

W

°C

°C

Notes:-

1)

De-rating factor of 0.13% per °C is applicable for Tj below 25°C.

2)

Double side cooled, single phase; 50Hz, 180° half-sinewave.

3)

Single side cooled, single phase; 50Hz, 180° half-sinewave.

4)

Double side cooled.

5)

Half-sinewave, 125°C Tj initial.

6)

VD=67% V

Data Sheet. Types K2623T#480 to K2623T#520 Issue 2 Page 1 of 11 February, 2004

, IFG=2A, t

DRM

≤

0.5µs, T

r

case

=125°C.

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Characteristics

Medium Voltage Thyristor Types K2623T#480 to K2623T#520

PARAMETER MIN. TYP. MAX. TEST CONDITIONS

V

TM

V

T0

r

T

(dv/dt)crCritical rate of rise of off-state voltage 1000 - - VD=80% V

I

DRM

I

RRM

V

tr

V

GT

I

GT

V

GD

I

H

t

gd

t

gt

Q

rr

Q

ra

I

rm

t

rr

t

q

R

thJK

Maximum peak on-state voltage - - 2.6 ITM=4000A V

Threshold voltage - - 1.421 V

Slope resistance - - 0.295

Peak off-state current - - 200 Rated V

Peak reverse current - - 200 Rated V

DRM

RRM

On-state recovery voltage - 30 - IT=6000A, tp=10ms, T

Gate trigger voltage - - 3.0 V

Gate trigger current - - 600

Gate non-trigger voltage - - 0.25 Rated V

=25°C VD=10V, IT=3A

T

j

DRM

Holding current - - 1000 Tj=25°C mA

Gate-controlled turn-on delay time - 1.3 2.0 µs

Turn-on time - 3.0 4.0

=2A, tr=0.5µs, VD=67%V

I

FG

di/dt=10A/µs, T

Recovered charge - 6800 - µC

Recovered charge, 50% Chord - 2600 3000 µC

Reverse recovery current - 180

Reverse recovery time - 30

-

-

- 450 -

Turn-off time (Note 2)

- 700 -

Thermal resistance, junction to heatsink

- - 0.008 Double side cooled K/W

=2000A, tp=2000µs, di/dt=10A/µs,

I

TM

V

=100V

r

ITM=2000A, tp=2000µs, di/dt=10A/µs,
V

=100V, Vdr=80%V

r

ITM=2000A, tp=2000µs, di/dt=10A/µs,
V

=100V, Vdr=80%V

r

- - 0.016 Single side cooled K/W

(Note 1)

, linear ramp, gate o/c

DRM

=25°C V

case

=25°C

j

, dVdr/dt=20V/µs

DRM

, dVdr/dt=200V/µs

DRM

, ITM=2000A,

DRM

UNITS

m

V/µs

mA

mA

mA

V

µs

A

µs

µs

F Mounting force 63 - 77 kN

W

Weight

t

- 1.23 - Outline options TC and TT

- 1.70 - Outline options TD and TV

kg

Ω

Notes:-

Unless otherwise indicated Tj=125°C

1)

For other clamp forces consult factory.

2)

Notes on non-rupture rated packages.
This product is available with a non-rupture rated package.
For additional details on these products, please consult factory.

Data Sheet. Types K2623T#480 to K2623T#520 Issue 2 Page 2 of 11 February, 2004

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Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Medium Voltage Thyristor Types K2623T#480 to K2623T#520

Voltage Grade

V

DRM VDSM VRRM

V

V

RSM

V

V

V

D

DC V

R

48 4800 4900 2160
50 5000 5100 2200
52 5200 5300 2240

2.0 Extension of Voltage Grades

This report is applicable to other voltage grades when supply has been agreed by Sales/Production.

3.0 De-rating Factor

A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.

4.0 Repetitive dv/dt

Standard dv/dt is 1000V/µs.

5.0 Frequency Ratings

The curves illustrated in figures 17 & 18 are for guidance only and are superseded by the maximum
ratings shown on page 1. For operation above line frequency, please consult the factory for assistance.

6.0 Snubber Components

When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.

7.0 Rate of rise of on-state current

The maximum un-primed rate of rise of on-state current must not exceed 600A/µs at any time during turn­on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 300A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.

8.0 Square wave frequency ratings

These ratings are given for load component rate of rise of on-state current of 50A/µs.

9.0 Duty cycle lines

The 100% duty cycle is represented on the frequency ratings by a straight line. Other duties can be
included as parallel to the first.

Data Sheet. Types K2623T#480 to K2623T#520 Issue 2 Page 3 of 11 February, 2004

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10.0 Gate Drive

The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.

The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration

) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.

(t

p1

Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I

11.0 Computer Modelling Parameters

An IXYS Company

I

GM

4A/µs

should remain flowing for the same duration as the anode current and have a

G

GT

Medium Voltage Thyristor Types K2623T#480 to K2623T#520

I

G

t

p1

.

11.1 Device Dissipation Calculations

∆

2

4

=

I

AV

Where VT0=1.421V, rT=0.295m

R

= Supplementary thermal impedance, see table below and

th

ff

= Form factor, see table below.

Conduction Angle 30° 60° 90° 120° 180° 270° d.c.

Square wave Double Side Cooled

Square wave Single Side Cooled

Sine wave Double Side Cooled

Sine wave Single Side Cooled

Conduction Angle 30° 60° 90° 120° 180° 270° d.c.

Square wave 3.464 2.449 2 1.732 1.414 1.149 1

Sine wave 3.98 2.778 2.22 1.879 1.57

00

⋅⋅

Ω,

rff

T

2

⋅⋅⋅++−

WrffVV

AVTTT

and:

Supplementary Thermal Impedance

0.00915 0.00907 0.00898 0.00891 0.00878 0.00864 0.008

0.01795 0.01781 0.01772 0.01759 0.01731 0.01678 0.016

0.00911 0.00903 0.00895 0.00884 0.00867

0.01784 0.01775 0.01763 0.01735 0.01682

Form Factors

W

AV

=

R

max

T

th

−=∆

TTT

Hsj

Data Sheet. Types K2623T#480 to K2623T#520 Issue 2 Page 4 of 11 February, 2004

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p

p

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11.2 Calculating VT using ABCD Coefficients

An IXYS Company

Medium Voltage Thyristor Types K2623T#480 to K2623T#520

The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V

terms of I

The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The
resulting values for V
that plotted.

11.3 D.C. Thermal Impedance Calculation

given below:

T

T

A

B

C

D

vs. VT, on page 6 is represented in two ways;

T

and rT tangent used for rating purposes and

T0

in

T

()

ln

agree with the true device characteristic over a current range, which is limited to

25°C Coefficients 125°C Coefficients

6.878409 A 2.31712993

-1.107307 B -0.1605662

-3.2302431×10

0.09985874 D 8.603465×10

-4

=

∑

=

p

C 2.676208×10

np




1

pt



1



−

τ

err

−⋅=

t



p






⋅+⋅+⋅+=

IDICIBAV

TTTT

-4

-3

Where

The coefficients for this device are shown in the tables below:

Term123

r

τ

Term123 4

r

τ

p = 1

t = Duration of heating pulse in seconds.
r

= Thermal resistance at time t.

t

= Amplitude of pth term.

r

τ

= Time Constant of rth term.

p

p

p

p

n, n

to

9.899658×10

is the number of terms in the series and:

D.C. Double Side Cooled

4.293445×10

0.8365194 0.176198 0.02000819

5.623142 1.132481 0.1461472 0.01849926

-3

D.C. Single Side Cooled

-3

2.731068×10

2.542182×10

-3

-3

2.619106×10

1.167986×10

-3

1.049687×10

-3

-3

Data Sheet. Types K2623T#480 to K2623T#520 Issue 2 Page 5 of 11 February, 2004

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Medium Voltage Thyristor Types K2623T#480 to K2623T#520

Curves

Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance

(A)

T

10000

K2623T#480-520

Issue 2

Tj = 125°C

Tj = 25°C

(K/W)

(th)t

0.1

0.01

K2623T#480-520

SSC 0.016K/W

DSC 0.008K/W

Issue 2

1000

Instantaneous on-state current - I

100

01234

Instantaneous on-state vol tage - V

(V)

T

0.001

Transient Thermal Impedance - Z

0.0001

0.00001

0.0001 0.001 0.01 0.1 1 10 100

Time (s)

Figure 3 - Gate characteristics - Trigger limits Figure 4 - Gate characteristics - Power curves

8

K2623T#480-520

Tj=25°C

7

6

(V)

5

GT

Issue 2

Max VG dc

20

K2623T#480-520

Tj=25°C

18

16

14

(V)

GT

12

Issue 2

Max VG dc

4

IGT, V

GT

3

Gate Trigger Voltage - V

2

(A)

-40°C

Min VG dc

25°C

1

IGD, V

GD

0

0 0.25 0.5 0.75 1 1.25 1.5

Data Sheet. Types K2623T#480 to K2623T#520 Issue 2 Page 6 of 11 February, 2004

125°C

Gate Trigger Current - I

-10°C

GT

10

8

Gate Trigger Voltage - V

6

4

2

0

0246810

PG 4W dc

Gate Trigger Current - I

PG Max 30W dc

Min VG dc

(A)

GT

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Medium Voltage Thyristor Types K2623T#480 to K2623T#520

Figure 5 - Total recovered charge, Q

100000

(µC)

rr

10000

Total recovered charge - Q

1000

1 10 100 1000

Commutation rate - di/dt (A/µs)

rr

K2623T#480-520

Issue 2

Tj = 125°C

4000A

2000A

1000A

500A

Figure 6 - Recovered charge, Qra (50% chord)

10000

K2623T#480-520

Issue 2

Tj = 125°C

(µC)

ra

Recovered charge - Q

1000

1 10 100 1000

Commutation rate - di/dt (A/µs)

4000A

2000A

1000A

500A

Figure 7 - Peak reverse recovery current, I

10000

K2623T#480-520

Issue 2

Tj = 125°C

(A)

1000

RM

100

Reverse recovery current - I

10

1 10 100 1000

Commutation rate - di/dt (A/µs)

rm

4000A
2000A
1000A
500A

Figure 8 - Maximum recovery time, trr (50% chord)

100

(µs)

rr

10

Reverse recovery time - t

1

1 10 100 1000

Commutation rate - di/dt (A/µs)

K2623T#480-520

Issue 2

Tj = 125°C

4000A

2000A

1000A

500A

Data Sheet. Types K2623T#480 to K2623T#520 Issue 2 Page 7 of 11 February, 2004

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Medium Voltage Thyristor Types K2623T#480 to K2623T#520

Figure 9 – On-state current vs. Power dissipation – Double Side Cooled (Sine wave)

14000

K2623T#480-520

Issue 2

12000

30°

10000

8000

6000

Maximum forward dissipation (W

4000

2000

60°

90°

120°

180°

Figure 10 – On-state current vs. Heatsink temperature - Double Side Cooled (Sine wave)

150

K2623T#480-520

Issue 2

125

100

75

50

Maximum permissable heatsink temperature (°C)

25

30° 60° 90° 120° 180°

0

0 500 1000 1500 2000 2500 3000 3500

Mean forward current (A) (Whole cycle averaged)

Figure 11 – On-state current vs. Power dissipation – Double Side Cooled (Square wave)

14000

K2623T#480-520

Issue 2

12000

10000

8000

d.c.
270°
180°

6000

Maximum forward dissipation (W

4000

120°
90°
60°
30°

0

0 500 10 00 1500 2000 2500 3000 3500

Mean forward current (A) (Whole cycle averaged)

Figure 12 – On-state current vs. Heatsink temperature – Double Side Cooled (Square wave)

150

K2623T#480-520

Issue 2

125

100

30°

75

50

Maximum permissible heatsink temperature (°C

60°
90°
120°
180°
270°
d.c.

2000

0

0 1000 2000 3000 4000 5000

Data Sheet. Types K2623T#480 to K2623T#520 Issue 2 Page 8 of 11 February, 2004

Mean Forward Current (Amps) (Whole Cycle Averaged)

25

0

0 1000 2000 3000 4000 5000

Mean Forward Current (Amps) (Whole Cycle Averaged)

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)

)

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Medium Voltage Thyristor Types K2623T#480 to K2623T#520

Figure 13 – On-state current vs. Power dissipation – Single Side Cooled (Sine wave)

7000

K2623T#480-520

Issue 2

6000

5000

4000

3000

Maximum forward dissipation (W

2000

1000

30° 60°

90°

120°

180°

Figure 14 – On-state current vs. Heatsink temperature – Single Side Cooled (Sine wave)

150

K2623T#480-520

Issue 2

125

100

75

50

Maximum permissable heatsink temperature (°C

25

30° 60° 90° 120° 180°

0

0 500 1000 1500 2000 2500

Mean forward current (A) (Whole cycle averaged)

Figure 15 – On-state current vs. Power dissipation – Single Side Cooled (Square wave)

7000

K2623T#480-520

Issue 2

6000

5000

4000

3000

Maximum forward dissipation (W

2000

d.c.
270°
180°
120°
90°
60°
30°

0

0 50 0 1000 1500 2000 2500

Mean forward current (A) (Whole cycle averaged)

Figure 16 – On-state current vs. Heatsink temperature – Single Side Cooled (Square wave)

150

K2623T#480-520

Issue 2

125

100

30°
60°

75

50

Maximum permissible heatsink temperature (°C

90°
120°
180°
270°
d.c.

1000

0

0 500 1000 1500 2000 2500 3000

Data Sheet. Types K2623T#480 to K2623T#520 Issue 2 Page 9 of 11 February, 2004

Mean Forward Current (Amps) (Whole Cycle Averaged)

25

0

0 500 1000 1500 2000 2500 3000

Mean Forward Current (Amps) (Whole Cycle Averaged)

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Medium Voltage Thyristor Types K2623T#480 to K2623T#520

Figure 17 – Square Wave Frequency Ratings Figure 18 – Sine Wave Frequency Ratings

1.00E+05

1.00E+04

1.00E+03

1kA

2kA

3kA

4kA

6kA

K2623T#480-520

Issue 2

di/dt=50A/µs

100% Duty Cycle

TK=55°C

1.00E+05

1.00E+04

1.00E+03

1kA

2kA

3kA

K2623T#480-520

100% Duty Cycle

Issue 2

TK=55°C

Frequency (Hz)

1.00E+02

1.00E+01

1.00E+00

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse width (s)

Figure 19 - Maximum surge and I2t Ratings

Gate may temporarily lose control of conduction angle

100000

(A)

TSM

10000

Frequency (Hz)

1.00E+02

1.00E+01

4kA

6kA

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Pulse Width (s)

1.00E+08

RRM

RRM

≤

≤

10V

RRM

10V

1.00E+07

I2t: V

I2t: 60% V

I

: V

TSM

2

2

s)

t (A

I

: 60% V

TSM

RRM

Maximum I

Total peak half sine surge current - I

Tj (initial) = 125°C

K2623T#480-520

Issue 2

1000

1.00E+06

135101 510 50100

Duration of surge (ms) Duration of surge (cycles @ 50Hz)

Data Sheet. Types K2623T#480 to K2623T#520 Issue 2 Page 10 of 11 February, 2004

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Outline Drawing & Ordering Information

Medium Voltage Thyristor Types K2623T#480 to K2623T#520

Outline options TC and TT

ORDERING INFORMATION

(Please quote 10 digit code as below)

Outline option TD and TV

K2623 T#

Fixed

Type Code

Typical order code: K2623TT500 – 5000V V

IXYS Semiconductor GmbH

Edisonstraße 15
D-68623 Lampertheim
Tel: [phone]
Fax: [phone]
E-mail: [e-mail]

IXYS Corporation

3540 Bassett Street
Santa Clara CA 95054 USA
Tel: [phone]
Fax: [phone]
E-mail: [e-mail]

The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.

In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.

Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily
subject to the conditions and limits contained in this report.

TC=26.1mm height, TT=26.1mm height, non-rupture rated

TD=33.1mm height, TV=33.1mm height, non-rupture rated

Outline Code

, 26.1mm clamp height, non-rupture rated capsule.

DRM

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An

Company

www.westcode.com

www.ixys.com







Voltage code

/100

V

DRM

48-52

Westcode Semiconductors Ltd

Langley Park Way, Langley Park,

Chippenham, Wiltshire, SN15 1GE.

E-mail: [e-mail]

E-mail: [e-mail]

Tel: [phone]

Fax: [phone]

Westcode Semiconductors Inc

Long Beach CA 90807 USA

Tel: [phone]

Fax: [phone]

© Westcode Semiconductors Ltd.

Fixed

Turn off time code

3270 Cherry Avenue

0

Data Sheet. Types K2623T#480 to K2623T#520 Issue 2 Page 11 of 11 February, 2004