Datasheet K2359TD600, K2359TD650 Datasheet (Westcode Semiconductors)

Date:- 20 Aug, 2002

WESTCODE

An IXYS Company

Medium Voltage Thyristor

Types K2359TD600 to K2359TD650

Old Type No.: P1063DH60-65

Absolute Maximum Ratings

VOLTAGE RATINGS

V

DRM

V

DSM

V

RRM

V

RSM

I

T(AV)M

I

T(AV)M

I

T(AV)M

I

T(RMS)

I

T(d.c.)

I

TSM

I

TSM2

I2tI
I2t

(di/dt)

V

RGM

P

G(AV)

P

GM

T

j op

T

stg

Repetitive peak off-state voltage, (note 1) 6000-6500 V
Non-repetitive peak off-state voltage, (note 1) 6000-6500 V
Repetitive peak reverse voltage, (note 1) 6000-6500 V
Non-repetitive peak reverse voltage, (note 1) 6100-6600 V

OTHER RATINGS

Maximum average on-state current, T
Maximum average on-state current. T
Maximum average on-state current. T
Nominal RMS on-state current, T
D.C. on-state current, T

=25°C, (note 4) 4102 A

sink

Peak non-repetitive surge tp=10ms, Vrm=0.6V
Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)

2

t capacity for fusing tp=10ms, Vrm=0.6V

2

I

t capacity for fusing tp=10ms, Vrm≤10V, (note 5)

Critical rate of rise of on-state current (repetitive), (Note 6) 200 A/µs

cr

Critical rate of rise of on-state current (non-repetitive), (Note 6) 400 A/µs
Peak reverse gate voltage 5 V
Mean forward gate power 4 W
Peak forward gate power 60 W
Operating temperature range -40 to +115 °C
Storage temperature range -40 to +150 °C

sink

sink

sink

=25°C, (note 2) 4614 A

sink

Data Sheet Issue:- 1

MAXIMUM

LIMITS

MAXIMUM

LIMITS

=55°C, (note 2) 2359 A
=85°C, (note 2) 1647 A
=85°C, (note 3) 1022 A

, (note 5) 27 A

RRM

30 A

, (note 5) 3.65×10

RRM

4.50×10

6

6

UNITS

UNITS

A2s
A2s

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 115°C T

6) V

=67% V

D

Data Sheet. Types K2359TD600 to K2359TD650 Issue 1 Page 1 of 11 August, 2002

, IFG=2A, tr≤0.5µs, T

DRM

initial.

j

case

=115°C.

below 25°C.

j

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Characteristics

PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS

V

TM

V

T0

r

T

(dv/dt)crCritical rate of rise of off-state voltage 1000 - - VD=80% V
I

DRM

I

RRM

V

tr

V

GT

I

GT

V

GD

I

H

t

gd

t

gt

Q

rr

Q

ra

I

rm

t

rr

t

q

R

thJK

Maximum peak on-state voltage - - 2.1 ITM=2000A V
Threshold voltage - - 1.391 V
Slope resistance - - 0.360

, linear ramp, gate o/c

DRM

Peak off-state current - - 200 Rated V
Peak reverse current - - 200 Rated V
On-state recovery voltage - 15.0 - IT=3×I
Gate trigger voltage - - 3.0 V

T

Gate trigger current - - 600
Gate non-trigger voltage - - 0.25 Rated V

DRM

RRM

, tp=10ms, T

T(AV)M

=25°C VD=10V, IT=3A

j

DRM

=25°C V

case

mΩ

V/µs

mA
mA

mA

V
Holding current - - 1000 Tj=25°C mA
Gate-controlled turn-on delay time - 0.9 2.0 µs
Turn-on time - 2.5 4.5

=67% V

V

D

I

=2A, tr=0.5µs, Tj=25°C

FG

, IT=1500A, di/dt=60A/µs,

DRM

µs
Recovered charge - 11500 - µC
Recovered charge, 50% Chord - 6800 8000 µC
Reverse recovery current - 240 - A
Reverse recovery time - 50 -

- 1100 -

Turn-off time

- 1500 -

Thermal resistance, junction to heatsink

- - 0.0085 Double side cooled K/W

I

=2000A, tp=2000µs, di/dt=10A/µs,

TM

V

=50V

r

ITM=2000A, tp=2000µs, di/dt=10A/µs,
V

=100V, Vdr=80%V

r

, dVdr/dt=20V/µs

DRM

ITM=2000A, tp=2000µs, di/dt=10A/µs,
V

=100V, Vdr=80%V

r

, dVdr/dt=200V/µs

DRM

µs

µs

- - 0.0170 Single side cooled K/W
F Mounting force 63 - 77 kN
W

Weight - 1.7 - kg

t

Notes:-

1) Unless otherwise indicated T

Data Sheet. Types K2359TD600 to K2359TD650 Issue 1 Page 2 of 11 August, 2002

=115°C.

j

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Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Voltage Grade

V

DRM VDSM VRRM

V

V

RSM

V

V

V

D

DC V

R

60 6000 6100 3000
62 6200 6300 3100
64 6400 6500 3200
65 6500 6600 3250

2.0 Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production.

3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.

4.0 Repetitive dv/dt Standard dv/dt is 1000V/µs.

5.0 Frequency Ratings The curves illustrated in figures 17 & 18 are for guidance only and are superseded by the maximum

ratings shown on page 1. For operation above line frequency, please consult the factory for assistance.

6.0 Snubber Components When selecting snubber components, care m ust be taken not to use ex cessively large values of snubber

capacitor or excessively sm all values of snubber re sistor. Such exc essive com ponent values may lead to
device damage due to the large resultant values of snubber disc harge current. If r equired, please consult
the factory for assistance.

7.0 Rate of rise of on-state current The maxim um un-primed rate of ris e of on-s tate c urr ent must not exceed 400A/µs at any time during turn-

on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 200A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.

8.0 Square wave frequency ratings These ratings are given for load component rate of rise of on-state current of 50A/µs.

9.0 Duty cycle lines The 100% duty cycle is represented on the frequency ratings by a straight line. Other duties can be

included as parallel to the first.

Data Sheet. Types K2359TD600 to K2359TD650 Issue 1 Page 3 of 11 August, 2002

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10.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V

is assumed. This gate drive must be applied when using the full di/dt capability of the device.

I

GM

4A/µs

I

G

t

p1

The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its dur ation

) should be 20µs or sufficient to allow the anode current to reach ten tim es IL, whichever is greater.

(t

p1

Otherwise, an increase in pulse current c ould be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
magnitude in the order of 1.5 times I

11.0 Computer Modelling Parameters

11.1 Device Dissipation Calculations

I

=

AV

Where VT0=1.391V, rT=0.360mΩ,

should remain flowing for the same duration as the anode current and have a

G

2

4

00

2

⋅⋅

.

GT

T

AV

=

∆

R

th

max

TTT

−=∆

Hsj

WrffVV

⋅⋅⋅++−

AVTTT

rff

T

and:

W

R

= Supplementary thermal impedance, see table below and

th

ff = Form factor, see table below.

Supplementary Thermal Impedance

Conduction Angle 30° 60° 90° 120° 180° 270° d.c.

Square wave Double Side Cooled 0.00923 0.00915 0.00907 0.00899 0.00884 0.00864 0.0085

Square wave Single Side Cooled 0.01801 0.01792 0.01783 0.01775 0.01760 0.01739 0.0170

Sine wave Double Side Cooled 0.00917 0.00906 0.00898 0.00890 0.00867

Sine wave Single Side Cooled 0.01794 0.01782 0.01773 0.01765 0.01742

Form Factors

Conduction Angle 30° 60° 90° 120° 180° 270° d.c.

Square wave 3.464 2.449 2 1.732 1.414 1.149 1

Sine wave 3.98 2.778 2.22 1.879 1.57

Data Sheet. Types K2359TD600 to K2359TD650 Issue 1 Page 4 of 11 August, 2002

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p

p

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11.2 Calculating VT using ABCD Coefficients

The on-state characteristic I
(i) the well established V
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V

terms of I

The constants, derived by curve fitting soft ware, are given below for both hot and c old c harac teris tic s. T he
resulting values for V
that plotted.

11.3 D.C. Thermal Impedance Calculation

given below:

T

T

A 1.922153586 A 2.349354586
B -3.055381×10
C 2.122468×10
D -3.413606×10

vs. VT, on page 6 is represented in two ways;

T

and rT tangent used for rating purposes and

T0

()

agree with the true device characteristic over a current range, which is limited to

25°C Coefficients 115°C Coefficients

-3

-4

-3

=

∑

p

=

B -0.2467283
C 2.15992×10
D 0.02669908

np




1

pt



1



−

τ

−⋅=

err

t



p






IDICIBAV ⋅+⋅+⋅+= ln

TTTT

-4

T

in

Where p = 1 to n, n is the number of terms in the series and:

t = Duration of heating pulse in seconds.
r

= Thermal resistance at time t.

t

= Amplitude of pth term.

r

= Time Constant of rth term.

τ

The coefficients for this device are shown in the tables below:

D.C. Double Side Cooled

Term

r

p

τ

p

Term

r

p

τ

p

0.01011545 3.424005×10

5.990464 1.10841 0.140561 0.02103968

123

4.934536×10

0.8203239 0.1170407 0.0170874

1234

-3

D.C. Single Side Cooled

2.693673×10

-3

2.491583×10

-3

8.295909×10

-3

1.174174×10

-4

-3

Data Sheet. Types K2359TD600 to K2359TD650 Issue 1 Page 5 of 11 August, 2002

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Curves

Figure 1 - On-state characteristics of Limit device Figure 2 - Transient thermal impedance

10000

0.1

K2359TD600-650

Issue 1

SSC

0.0170K/W

Tj = 25°C

(A)

TM

1000

Instantaneous On-state current - I

100

012345

Instantaneous On-state voltage - V

Tj = 115°C

K2359TD600-650

Issue 1

(V)

TM

0.01

0.001

0.0001

Transient thermal impedance (K/W)

0.00001

0.000001
1E-05 0 .0001 0.001 0.01 0.1 1 10 100

Time (s)

DSC

0.0085K/W

Figure 3 - Gate characteristics - Trigger limits Figure 4 - Gate characteristics - Power curves

6

K2359TD600-650

Issue 1

Tj=25°C

Max VG dc

14

K2359TD600-650

Tj=25°C

12

Issue 1

10

4

(V)

G

Gate Voltage - V

IGT, V

GT

(V)

G

Gate Voltage - V

Max VG dc

8

6

PG Max 60W dc

2

4

25°C

-10°C

125°C

IGD, V

GD

0

0 0.25 0.5 0.75 1 1.25 1.5

Gate Curre n t - I

Data Sheet. Types K2359TD600 to K2359TD650 Issue 1 Page 6 of 11 August, 2002

-40°C

Min VG dc

2

PG 4W dc

Min VG dc

0

0 5 10 15 20

(A)

G

Gate Current - I

(A)

G

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Figure 5 - Total recovered charge, Q

100000

(µC)

rr

10000

Recovered charge - Q

1000

1 10 100 1000

di/dt (A/µs)

rr

K2359TD600-650

Issue 1

Tj=115°C

4000A
2000A

1000A

500A

Figure 6 - Recovered charge, Qra (50% chord)

100000

, 50% chord (µC)

ra

10000

Recovered charge - Q

1000

1 10 100 1000

di/dt (A/µs)

K2359TD600-650

Issue 1

Tj=115°C

4000A
2000A
1000A

500A

Figure 7 - Peak reverse recovery current, I

10000

K2359TD600-650

Issue 1

Tj=115°C

(A)

rm

1000

Reverse recovery current - I

100

1 10 100 1000

di/dt (A/µs)

4000A
2000A
1000A
500A

rm

Figure 8 - Maximum recovery time, trr (50% chord)

100

(µs)

rr

Reverse recovery time (50% chord) - t

10

1 10 100 1000

di/dt (A/µs)

K2359TD600-650

Issue 1

Tj=115°C

4000A
2000A
1000A

500A

Data Sheet. Types K2359TD600 to K2359TD650 Issue 1 Page 7 of 11 August, 2002

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Figure 9 – On-state current vs. Power dissipation – Double Side Cooled (Sine wave)

12000

180°

120°

90°

60°

10000

8000

6000

4000

Maximum forward dissipation (W)

2000

0

0 500 1000 1500 2000 2500 3000

Mean forward current (A) (Whole cycle averaged)

30°

K2359TD600-650

Issue 1

Figure 10 – On-state current vs. Heatsink temperature - Double Side Cooled (Sine wave)

125

100

75

50

Maximum permissable heatsink temperature (°C)

25

0

0 500 1000 1500 2000 2500 3000

Mean forward current (A) (Whole cycle averag ed)

30° 60° 90° 120° 180°

K2359TD600-650

Issue 1

Figure 11 – On-state current vs. Power dissipation – Double Side Cooled (Square wave)

12000

10000

8000

d.c.

Issue 1

270°
180°
120°
90°
60°
30°

6000

4000

Maximum forward dissipation (W)

2000

K2359TD600-650

0

0 1000 2000 3000 4000 5000

Mean Forward Current (Amps) (Whole Cycle Averaged)

Figure 12 – On-state current vs. Heatsink temperature – Double Side Cooled (Square wave)

125

100

75

50

Maximum permissible heatsink temperature (°C)

25

0

0 1000 2000 3000 4000 5000

Mean Forward Current (Amps) (Whole Cycle Averaged)

K2359TD600-650

Issue 1

30°
60°
90°
120°
180°
270°
d.c.

Data Sheet. Types K2359TD600 to K2359TD650 Issue 1 Page 8 of 11 August, 2002

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Figure 13 – On-state current vs. Power dissipation – Single Side Cooled (Sine wave)

6000

180°

120°

90°

60°

5000

4000

3000

2000

Maximum forward dissipation (W)

1000

0

0 500 1000 1500 2000

Mean forward current (A) (Whole cycle averaged)

30°

K2359TD600-650

Issue 1

Figure 14 – On-state current vs. Heatsink temperature – Single Side Cooled (Sine wave)

125

100

75

50

Maximum permissable heatsink temperature (°C)

25

0

0 500 1000 1500 2000

Mean forward current (A) (Whole cycle averaged)

30° 60° 90°

K2359TD600-650

Issue 1

120°

180°

Figure 15 – On-state current vs. Power dissipation – Single Side Cooled (Square wave)

6000

5000

4000

d.c.
270°

Issue 1

180°
120°
90°
60°
30°

3000

2000

Maximum forward dissipation (W)

1000

K2359TD600-650

0

0 500 1000 1500 2000 2500

Mean Forward Current (Amps) (Whole Cycle Averaged)

Figure 16 – On-state current vs. Heatsink temperature – Single Side Cooled (Square wave)

125

100

75

50

Maximum permissible heatsink temperature (°C)

25

0

0 500 1000 1500 2000 2500

Mean Forward Current (Amps) (Whole Cycle Averaged)

K2359TD600-650

Issue 1

30°
60°
90°
120°
180°
270°
d.c.

Data Sheet. Types K2359TD600 to K2359TD650 Issue 1 Page 9 of 11 August, 2002

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Figure 17 – Square Wave Frequency Ratings Figure 18 – Sine Wave Frequency Ratings

1.00E+05
500A

100% Duty Cycle

1.00E+05
500A

K2359TD600-650

Issue 1

THs=55°C

1000A

1.00E+04

2000A

Frequency (Hz)

1.00E+03

THs=55°C
di/dt=50A/µs

K2359TD600-650

1.00E+02

1.00E-05 1.00E-04 1.00E-03 1.00E-02

4000A

6000A

Issue 1

Pulse width (s)

Figure 19 - Maximum surge and I2t Ratings

1000A

1.00E+04

2000A

1.00E+03

Frequency (Hz)

1.00E+02

1.00E+01

1.00E-05 1.00E-04 1.00E-03 1.00E-02

4000A

100% Duty Cycle

6000A

Pulse Width (s)

100000

10000

I2t: V

I2t: 60% V

I

: V

TSM

I

: 60% V

TSM

RRM

RRM

≤

≤

10V

RRM

10V

RRM

1.00E+08

1.00E+07

2

2

s)
t (A

Maximum I

Total peak half sine surge current (A

Tj (initial) = 115°C

1000

13510

1

5 10 50 100

K2359TD600-650

Issue 1

1.00E+06

Duration of surge (ms) Duration of surge (cycles @ 50Hz)

Data Sheet. Types K2359TD600 to K2359TD650 Issue 1 Page 10 of 11 August, 2002

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Outline Drawing & Ordering Information

ORDERING INFORMATION (Please quote 10 digit code as bel ow)



 

K2359 TD

Fixed

Type Code

Order code: K2359TD620 – 6200V V

IXYS Semiconductor GmbH

Edisonstraße 15
D-68623 Lampertheim
Tel: [phone]
Fax: [phone]
E-mail: [e-mail]

IXYS Corporation

3540 Bassett Street
Santa Clara CA 95054 USA
Tel: [phone]
Fax: [phone]
E-mail: [e-mail]

The information contained herein is confidential and is protected by Copyright. The information may not be used or
disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors
Ltd.

In the interest of product improvement, Westcode reserves the right to change specifications at any ti me without prior
notice.

Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessari ly subject
to the conditions and limits contained in this report.

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An IXYS Company

Fixed

outline code

, 35mm clamp height capsule.

RRM

www.westcode.com

www.ixys.net



Voltage code

/100

V

DRM

60-65

Fixed turn-off

time code

Westcode Semiconductors Ltd

PO Box 57 Chippenham

Wiltshi re S N15 1J L

Tel: [phone]

Fax: [phone]

E-mail: WSL.sales@westcode,com

Westcode Semiconductors Inc

3270 Cherry Avenue

Long Beach CA 90807 USA

Tel: [phone]

Fax: [phone]

E-mail: [e-mail]

© Westcode Semiconductors Ltd.

Data Sheet. Types K2359TD600 to K2359TD650 Issue 1 Page 11 of 11 August, 2002