Page 1
TL/F/6360
54LS30/DM54LS30/DM74LS30 8-Input NAND Gate
June 1989
54LS30/DM54LS30/DM74LS30
8-Input NAND Gate
General Description
This device contains a single gate which performs the logic
NAND function.
Features
Y
Alternate Military/Aerospace device (54LS30) is available. Contact a National Semiconductor Sales Office/
Distributor for specifications.
Connection Diagram
Dual-In-Line Package
TL/F/6360– 1
Order Number 54LS30DMQB, 54LS30FMQB,
54LS30LMQB, DM54LS30J, DM54LS530W, DM74LS30M or DM74LS30N
See NS Package Number E20A, J14A, M14A, N14A or W14B
Function Table
YeABCDEFGH
Inputs Output
A thru H Y
All Inputs H L
One or More H
Input L
HeHigh Logic Level
L
e
Low Logic Level
C
1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.
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Absolute Maximum Ratings (Note)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage 7V
Input Voltage 7V
Operating Free Air Temperature Range
DM54LS and 54LS
b
55§Ctoa125§C
DM74LS 0
§
Ctoa70§C
Storage Temperature Range
b
65§Ctoa150§C
Note:
The ‘‘Absolute Maximum Ratings’’ are those values
beyond which the safety of the device cannot be guaranteed. The device should not be operated at these limits. The
parametric values defined in the ‘‘Electrical Characteristics’’
table are not guaranteed at the absolute maximum ratings.
The ‘‘Recommended Operating Conditions’’ table will define
the conditions for actual device operation.
Recommended Operating Conditions
Symbol Parameter
DM54LS30 DM74LS30
Units
Min Nom Max Min Nom Max
V
CC
Supply Voltage 4.5 5 5.5 4.75 5 5.25 V
V
IH
High Level Input Voltage 2 2 V
V
IL
Low Level Input Voltage 0.7 0.8 V
I
OH
High Level Output Current
b
0.4
b
0.4 mA
I
OL
Low Level Output Current 4 8 mA
T
A
Free Air Operating Temperature
b
55 125 0 70
§
C
Electrical Characteristics over recommended operating free air temperature range (unless otherwise noted)
Symbol Parameter Conditions Min
Typ
Max Units
(Note 1)
V
I
Input Clamp Voltage V
CC
e
Min, I
I
eb
18 mA
b
1.5 V
V
OH
High Level Output V
CC
e
Min, I
OH
e
Max DM54 2.5 3.4
V
Voltage V
IL
e
Max
DM74 2.7 3.4
V
OL
Low Level Output V
CC
e
Min, I
OL
e
Max DM54 0.25 0.4
Voltage V
IH
e
Min
DM74 0.35 0.5 V
I
OL
e
4 mA, V
CC
e
Min DM74 0.25 0.4
I
I
Input Current@Max V
CC
e
Max, V
I
e
7V
0.1 mA
Input Voltage
I
IH
High Level Input Current V
CC
e
Max, V
I
e
2.7V 20 mA
I
IL
Low Level Input Current V
CC
e
Max, V
I
e
0.4V
b
0.4 mA
I
OS
Short Circuit V
CC
e
Max DM54
b
20
b
100
mA
Output Current (Note 2)
DM74
b
20
b
100
I
CCH
Supply Current with V
CC
e
Max
0.35 0.5 mA
Outputs High
I
CCL
Supply Current with V
CC
e
Max
0.6 1.1 mA
Outputs Low
Switching Characteristics at V
CC
e
5V and T
A
e
25§C (See Section 1 for Test Waveforms and Output Load)
R
L
e
2kX
Symbol Parameter C
L
e
15 pF C
L
e
50 pF Units
Min Max Min Max
t
PLH
Propagation Delay Time
412518ns
Low to High Level Output
t
PHL
Propagation Delay Time
415520ns
High to Low Level Output
Note 1: All typicals are at V
CC
e
5V, T
A
e
25§C.
Note 2: Not more than one output should be shorted at a time, and the duration should not exceed one second.
2
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3
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Physical Dimensions inches (millimeters)
Ceramic Leadless Chip Carrier Package (E)
Order Number 54LS30LMQB
NS Package Number E20A
14-Lead Ceramic Dual-In-Line Package (J)
Order Number 54LS30DMQB or DM54LS30J
NS Package Number J14A
4
Page 5
Physical Dimensions inches (millimeters) (Continued)
14-Lead Small Outline Molded Package (M)
Order Number DM74LS30M
NS Package Number M14A
14-Lead Molded Dual-In-Line Package (N)
Order Number DM74LS30N
NS Package Number N14A
5
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54LS30/DM54LS30/DM74LS30 8-Input NAND Gate
Physical Dimensions inches (millimeters) (Continued)
14-Lead Ceramic Flat Package (W)
Order Number 54LS30FMQB or DM54LS30W
NS Package Number W14B
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