Datasheet JC549, JC550 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D186

JC549; JC550

NPN general purpose transistors

Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04

1997 Jul 08

Philips Semiconductors Product specification

NPN general purpose transistors JC549; JC550

FEATURES

• Low current (max. 100 mA)

• Low voltage (max. 45 V).

PINNING

PIN DESCRIPTION

1 base
2 collector

APPLICATIONS

3 emitter

• General purpose switching and amplification

• Low noise stages in tape recorders, hi-fi amplifiers and

other audio-frequency equipment.

DESCRIPTION

NPN transistor in a TO-92; SOT54 plastic package.
PNP complements: JC559 and JC560.

handbook, halfpage

1

2

3

MAM259

2

1

3

Fig.1 Simplified outline (TO-92; SOT54)

and symbol.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

collector-base voltage open emitter

JC549 − 30 V
JC550 − 50 V

V

CEO

collector-emitter voltage open base

JC549 − 30 V

JC550 − 45 V
I
P
h
f

CM

tot
FE

T

peak collector current − 200 mA
total power dissipation T

≤ 25 °C − 500 mW

amb

DC current gain IC= 2 mA; VCE= 5 V 200 800
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 100 − MHz

1997 Jul 08 2

Philips Semiconductors Product specification

NPN general purpose transistors JC549; JC550

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

BM

P

tot

T

stg

T

j

T

amb

collector-base voltage open emitter

JC549 − 30 V

JC550 − 50 V

collector-emitter voltage open base

JC549 − 30 V

JC550 − 45 V

emitter-base voltage open collector − 5V
collector current (DC) − 100 mA
peak collector current − 200 mA
peak base current − 200 mA
total power dissipation T

≤ 25 °C; note 1 − 500 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient note 1 250 K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

1997 Jul 08 3

Philips Semiconductors Product specification

NPN general purpose transistors JC549; JC550

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

I

EBO

h

FE

h

FE

V

CEsat

V

BEsat

V

BE

C

c

C

e

f

T

F noise figure I

collector cut-off current IE= 0; VCB=30V −−15 nA

I

= 0; VCB= 30 V; Tj= 150 °C −−5µA

E

emitter cut-off current IC= 0; VEB=5V −−100 nA
DC current gain IC=10µA; VCE=5V;

JC549B; JC550B − 150 −

see Figs 2 and 3

JC549C; JC550C − 270 −

DC current gain IC= 2 mA; VCE=5V;

JC549; JC550 200 − 800

see Figs 2 and 3

JC549B; JC550B 200 290 450

JC549C; JC550C 420 520 800

collector-emitter saturation voltage IC= 10 mA; IB= 0.5 mA − 90 250 mV

I

= 100 mA; IB=5mA − 200 600 mV

C

base-emitter saturation voltage IC= 10 mA; IB= 0.5 mA; note 1 − 700 − mV

= 100 mA; IB= 5 mA; note 1 − 900 − mV

I

C

base-emitter voltage IC= 2 mA; VCE= 5 V; note 2 580 660 700 mV

I

= 10 mA; VCE= 5 V; note 2 −−770 mV

C

collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 2.5 − pF
emitter capacitance IC=ic= 0; VEB= 500 mV; f = 1 MHz − 11.5 − pF
transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz 100 −−MHz

= 200 µA; VCE=5V; RS=2kΩ;

C

−−4dB

f = 10 Hz to 15.7 kHz
I

= 200 µA; VCE=5V; RS=2kΩ;

C

−−4dB

f = 1 kHz; B = 200 Hz

Notes

1. V

decreases by about 1.7 mV/K with increasing temperature.

BEsat

2. VBE decreases by about 2 mV/K with increasing temperature.

1997 Jul 08 4

Philips Semiconductors Product specification

NPN general purpose transistors JC549; JC550

300

handbook, full pagewidth

h

FE

200

100

0

−2

10

JC549B; JC550B.

MBH724

VCE = 5 V

−1

10

1

10 10

2

10

IC (mA)

3

Fig.2 DC current gain; typical values.

600

handbook, full pagewidth

h

FE

400

200

0

−2

10

JC549C; JC550C.

MBH725

VCE = 5 V

−1

10

1

10 10

2

10

IC (mA)

3

Fig.3 DC current gain; typical values.

1997 Jul 08 5

Philips Semiconductors Product specification

NPN general purpose transistors JC549; JC550

PACKAGE OUTLINE

Plastic single-ended leaded (through hole) package; 3 leads SOT54

c

E

d

A L

1

D

2

3

b

1

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

A

5.2

mm

5.0

OUTLINE
VERSION

SOT54 TO-92 SC-43

b

0.48

0.40

b

c

D

d

1

0.66

0.45

0.40

4.8

4.4

0.56

IEC JEDEC EIAJ

E

1.7

4.2

1.4

3.6

REFERENCES

2.54

e

e

1

1.27

L

14.5

12.7

L

1

(1)

L

1

2.5

EUROPEAN

PROJECTION

b

e

1

e

ISSUE DATE

97-02-28

1997 Jul 08 6

Philips Semiconductors Product specification

NPN general purpose transistors JC549; JC550

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Jul 08 7

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© Philips Electronics N.V. 1997 SCA55
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Printed in The Netherlands 117047/00/02/pp8 Date of release: 1997 Jul 08 Document order number: 9397 750 02612