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HEXFET
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®
POWER MOSFET
Provisional Data Sheet No. PD-9.430B
JANTX2N6796
JANTXV2N6796
[REF:MIL-PRF-19500/557]
[GENERIC:IRFF130]
N-CHANNEL
100 Volt, 0.18
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.
HEXFET transistors also feature all of the well-establish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtually any application where high reliability is required.
ΩΩ
Ω HEXFET
ΩΩ
Product Summary
Part Number BVDSS RDS(on) ID
JANTX2N6796
JANTXV2N6796
Features:
■ Avalanche Energy Rating
■ Dynamic dv/dt Rating
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
Absolute Maximum Ratings
Parameter JANTX2N6796, JANTXV2N6796 Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 8.0
ID @ VGS = 10V , TC = 100°C Continuous Drain Current 5.0
I
DM
PD @ TC = 25°C Max. Power Dissipation 25 W
V
GS
dv/dt Peak Diode Recovery dv/dt ➂ 5.5
T
J
T
STG
Pulsed Drain Current ➀ 32
Linear Derating Factor 0.20 W/K ➄
Gate-to-Source Voltage ±20 V
Operating Junction -55 to 150
Storage Temperature Range
Lead Temperature 300
Weight 0.98 (typical) g
(0.063 in. (1.6mm) from
case for 10.5 seconds)
0.18Ω100V
8.0A
A
V/ns
o
C
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BV
DSS
∆BV
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
DSS
Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 1.0 mA
/∆TJTemperature Coefficient of Breakdown — 0.10 — V/°C Reference to 25°C, ID = 1.0 mA
Voltage
Static Drain-to-Source — — 0.18 VGS = 10V, ID = 5.0A
On-State Resistance — — 0.207 Ω VGS = 10V, ID = 8.0A
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 3.0 — — S ( )VDS > 15V, IDS = 8.0A ➃
Zero Gate Voltage Drain Current — — 25 VDS = 0.8 x Max Rating,VGS = 0V
— — 250 VDS = 0.8 x Max Rating
Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge 12.8 — 28.5 VGS = 10V, ID = 8.0A
Gate-to-Source Charge 1.0 — 6.3 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge 3.8 — 16.6 see figures 6 and 13
Turn-On Delay Time — — 30 VDD = 50V, ID = 8.0A,
Rise Time — — 75 RG = 7.5Ω, VGS = 10V
Turn-Off Delay Time — — 40
Fall Time — — 45 see figure 10
Internal Drain Inductance — 5.0 —
Internal Source Inductance — 15 —
Input Capacitance — 650 — VGS = 0V, VDS = 25V
Output Capacitance — 240 — f = 1.0 MHz
Reverse Transfer Capacitance — 44 — see figure 5
Ω
µA
nA
nC
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
nH
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
pF
VGS = 0V, TJ = 125°C
Modified MOSFET
symbol showing the
internal inductances.
➃
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
I
Continuous Source Current (Body Diode) — — 8.0 Modified MOSFET symbol showing the
S
I
Pulse Source Current (Body Diode) ➀ ——32 integral reverse p-n junction rectifier.
SM
V
Diode Forward Voltage — — 1.5 V Tj = 25°C, IS = 8.0A, VGS = 0V ➃
SD
t
Reverse Recovery Time — — 300 ns Tj = 25°C, IF = 8.0A, di/dt ≤ 100A/µs
rr
Q
Reverse Recovery Charge — — 3.0 µCV
RR
t
Forward Turn-On Time
on
Intrinsic turn-on time is negligible. T urn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min. Typ. Max. Units Test Conditions
R
R
thJC
thJA
Junction-to-Case — — 5.0
Junction-to-Ambient — — 175 K/W Typical socket mount
A
≤ 50V ➃
DD
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Fig. 1 — Typical Output Characteristics
Fig. 3 — Typical Transfer Characteristics
T
C
= 25°C
Fig. 2 — Typical Output Characteristics
TC = 150°C
Fig. 4 — Normalized On-Resistance Vs.Temperature
Fig. 5 — Typical Capacitance Vs. Drain-to-Source
Voltage
Fig. 6 — Typical Gate Charge Vs. Gate-to-Source
Voltage
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Fig. 7 — Typical Source-to-Drain Diode Forward
Voltage
Fig. 9 — Maximum Drain Current Vs. Case Temperature
Fig. 8 — Maximum Safe Operating Area
Fig. 10a — Switching Time Test Circuit
Fig. 10b — Switching Time Waveforms
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Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
Fig. 12a — Unclamped Inductive Test Circuit
Fig. 13a — Gate Charge Test Circuit
Fig. 12b — Unclamped Inductive Waveforms
Fig. 13b — Basic Gate Charge Waveform
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➂ I
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
(see figure 11)
➁ @ V
= 25V, Starting TJ = 25°C,
DD
EAS = [0.5 * L * (I
Peak IL = 8.0A, VGS = 10V, 25 ≤ RG ≤ 200Ω
2
) * [BV
L
DSS
/(BV
DSS-VDD
)]
≤ 8.0A, di/dt ≤ 140A/µs,
SD
VDD ≤ BV
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
, TJ ≤ 150°C
DSS
➄ K/W = °C/W
W/K = W/°C
Case Outline and Dimensions — TO-205AF (Modified TO-39)
All dimensions are shown millimeters (inches)
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
http://www.irf.com/ Data and specifications subject to change without notice. 10/96
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
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