Datasheet JANTXV2N6788, JANTX2N6788 Datasheet (International Rectifier)

HEXFET

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®

POWER MOSFET

Provisional Data Sheet No. PD-9.426B

JANTX2N6788

JANTXV2N6788

[REF:MIL-PRF-19500/555]

[GENERIC:IRFF120]

N-CHANNEL

100 Volt, 0.30

HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis­tors. The efficient geometry achieves very low on­state resistance combined with high transconductance.

HEXFET transistors also feature all of the well-es­tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtu­ally any application where high reliability is required.

ΩΩ

Ω HEXFET

ΩΩ

Product Summary

Part Number BVDSS RDS(on) ID

JANTX2N6788

JANTXV2N6788

Features:

■ Avalanche Energy Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

Absolute Maximum Ratings

Parameter JANTX2N6788, JANTXV2N6788 Units

ID @ VGS = 10V, TC = 25°C Continuous Drain Current 6.0

ID @ VGS = 10V , TC = 100°C Continuous Drain Current 3.5

I

DM

PD @ TC = 25°C Max. Power Dissipation 20 W

V

GS

dv/dt Peak Diode Recovery dv/dt ➂ 5.5

T

J

T

STG

Pulsed Drain Current ➀ 24

Linear Derating Factor 0.16 W/K ➄
Gate-to-Source Voltage ±2 0 V

Operating Junction -55 to 150
Storage T emperature Range

Lead Temperature 300

Weight 0.98 (typical) g

(0.063 in. (1.6mm) from

case for 10.5 seconds)

0.30Ω100V

6.0A

A

V/ns

o

C

JANTX2N6788, JANTXV2N6788 Device

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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min. Typ. Max. Units Test Conditions

BV

DSS

∆BV
R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

DSS

Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 1.0 mA

/∆TJTemperature Coefficient of Breakdown — 0.10 — V/°C Reference to 25°C, ID = 1.0 mA

Voltage
Static Drain-to-Source — — 0.30 VGS = 10V, ID = 3.5A
On-State Resistance — — 0.345 Ω VGS = 10V, ID = 6.0A
Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA
Forward Transconductance 1.5 — — S ( )VDS > 15V, IDS = 3.5A ➃
Zero Gate Voltage Drain Current — — 25 VDS = 0.8 x Max Rating,VGS = 0V

— — 250 VDS = 0.8 x Max Rating

Gate-to-Source Leakage Forward — — 100 VGS = 20V
Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Total Gate Charge 7.7 — 17 VGS = 10V, ID = 6.0A
Gate-to-Source Charge 0.7 — 4.0 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge 2.0 — 7.7 see figures 6 and 13
Turn-On Delay T ime — — 40 VDD = 50V , ID = 6.0A,
Rise Time — — 70 RG = 7.5Ω, VGS = 10V
Turn-Off Delay Time — — 40
Fall Time — — 70 see figure 10
Internal Drain Inductance — 5.0 —

Internal Source Inductance — 15 —

Input Capacitance — 350 — VGS = 0V, VDS = 25V
Output Capacitance — 150 — f = 1.0 MHz
Reverse Transfer Capacitance — 24 — see figure 5

Ω

µA

nA

nC

ns

Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.

nH

Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.

pF

VGS = 0V, TJ = 125°C

Modified MOSFET
symbol showing the
internal inductances.

➃

Source-Drain Diode Ratings and Characteristics

Parameter Min. Typ. Max. Units Test Conditions

I

Continuous Source Current (Body Diode) — — 6.0 Modified MOSFET symbol showing the

S

I

Pulse Source Current (Body Diode) ➀ ——24 integral reverse p-n junction rectifier.

SM

V

Diode Forward Voltage — — 1.8 V Tj = 25°C, IS = 6.0A, VGS = 0V ➃

SD

t

Reverse Recovery Time — — 240 ns Tj = 25°C, IF = 6.0A, di/dt ≤ 100A/µs

rr

Q

Reverse Recovery Charge — — 2.0 µCV

RR

t

Forward Turn-On Time

on

Intrinsic turn-on time is negligible. T urn-on speed is substantially controlled by LS + LD.

Thermal Resistance

Parameter Min. Typ. Max. Units Test Conditions

R
R

thJC
thJA

Junction-to-Case — — 6.25
Junction-to-Ambient — — 175 K/W Typical socket mount

A

≤ 50V ➃

DD

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Fig. 1 — Typical Output Characteristics

Fig. 3 — Typical Transfer Characteristics

T

C

= 25°C

Fig. 2 — Typical Output Characteristics

TC = 150°C

Fig. 4 — Normalized On-Resistance Vs.Temperature

Fig. 5 — Typical Capacitance Vs. Drain-to-Source

Voltage

Fig. 6 — Typical Gate Charge Vs. Gate-to-Source

Voltage

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Fig. 7 — Typical Source-to-Drain Diode Forward

Voltage

Fig. 9 — Maximum Drain Current Vs. Case Temperature

Fig. 8 — Maximum Safe Operating Area

Fig. 10a — Switching Time Test Circuit

Fig. 10b — Switching Time Waveforms

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Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration

Fig. 12a — Unclamped Inductive Test Circuit

Fig. 13a — Gate Charge Test Circuit

Fig. 12b — Unclamped Inductive Waveforms

Fig. 13b — Basic Gate Charge Waveform

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➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.
(see figure 11)

➁ @ V

= 25V, Starting TJ = 25°C,

DD

EAS = [0.5 * L * (I
Peak IL = 6.0A, VGS = 10V, 25 ≤ RG ≤ 200Ω

2

) * [BV

L

DSS

/(BV

DSS-VDD

)]

➂ I

≤ 6.0A, di/dt ≤ 110A/µs,

SD

VDD ≤ BV

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

, TJ ≤ 150°C

DSS

➄ K/W = °C/W

W/K = W/°C

Case Outline and Dimensions — TO-205AF (Modified TO-39)

All dimensions are shown millimeters (inches)

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: [phone]

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: [phone]

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: [phone]

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: [phone]

http://www.irf.com/ Data and specifications subject to change without notice. 10/96

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111