Datasheet JANTX2N6806 Datasheet (International Rectifier)

HEXFET

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®

POWER MOSFET

Provisional Data Sheet No. PD-9.548B

JANTX2N6806

JANTXV2N6806

[REF:MIL-PRF-19500/562]

[GENERIC:IRF9230]

P-CHANNEL

-200 V olt, 0.80

HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis­tors. The efficient geometry achieves very low on­state resistance combined with high transconductance.

HEXFET transistors also feature all of the well-es­tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtu­ally any application where high reliability is required.

ΩΩ

Ω HEXFET

ΩΩ

Product Summary

Part Number BVDSS RDS(on) ID

JANTX2N6806

JANTXV2N6806

Features:

■ Avalanche Energy Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

Absolute Maximum Ratings

Parameter JANTX2N6806, JANTXV2N6806 Units

ID @ VGS = -10V , TC = 25°C Continuous Drain Current -6.5

ID @ VGS = -10V , TC = 100°C Continuous Drain Current -4.0

I

DM

PD @ TC = 25°C Max. Power Dissipation 75 W

V

GS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt ➂ -5.0

T

J

T

STG

Pulsed Drain Current ➀ -28

Linear Derating Factor 0.60 W/K ➄
Gate-to-Source Voltage ±20 V
Single Pulse Avalanche Energy ➁ 66 mJ
Avalanche Current ➀ -6.5 A
Repetitive Avalanche Energy ➀ 7.5 mJ

Operating Junction -55 to 150
Storage Temperature Range

Lead Temperature 300

Weight 11.5 (typical) g

(0.063 in. (1.6mm) from

case for 10.5 seconds)

-6.5A0.80Ω-200V

A

V/ns

o

C

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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min. Typ. Max. Units Test Conditions

BV

DSS

∆BV
R

DS(on)

V

GS(th)

g

fs

I

DSS

I

GSS

I

GSS

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

C

iss

C

oss

C

rss

DSS

Drain-to-Source Breakdown Voltage -200 — — V VGS = 0V, ID = -1.0 mA

/∆TJTemperature Coefficient of Breakdown — -0.20 — V/°C Reference to 25°C, ID = -1.0 mA

Voltage
Static Drain-to-Source — — 0.80 VGS = -10V, ID = -4.0A
On-State Resistance — — 0.92 Ω VGS = -10V, ID = -6.5A
Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -250µA
Forward Transconductance 2.0 — — S ( )VDS > -15V, IDS = -4.0A ➃
Zero Gate Voltage Drain Current — — -25 VDS = 0.8 x Max Rating,VGS = 0V

— — -250 VDS = 0.8 x Max Rating

Gate-to-Source Leakage Forward — — -100 VGS = -20V
Gate-to-Source Leakage Reverse — — 100 VGS = 20V
Total Gate Charge 8 — 31 VGS = -10V, ID = -6.5A
Gate-to-Source Charge 0.8 — 7.0 VDS = Max. Rating x 0.5
Gate-to-Drain (“Miller”) Charge 5.0 — 17 see figures 6 and 13
Turn-On Delay T ime — — 50 VDD = -100V, ID = -6.5A,
Rise Time — — 10 0 RG = 7.5Ω, VGS = -10V
Turn-Off Delay Time — — 100
Fall Time — — 80 see figure 10
Internal Drain Inductance — 5.0 —

Internal Source Inductance — 13.0 —

Input Capacitance — 700 — VGS = 0V, VDS = -25V
Output Capacitance — 200 — f = 1.0 MHz
Reverse Transfer Capacitance — 40 — see figure 5

Ω

µA

nA

nC

ns

Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.

nH

Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.

pF

VGS = 0V, TJ = 125°C

Modified MOSFET
symbol showing the
internal inductances.

➃

Source-Drain Diode Ratings and Characteristics

Parameter Min. Typ. Max. Units Test Conditions

I

Continuous Source Current (Body Diode) — — -6.5 Modified MOSFET symbol showing the

S

I

Pulse Source Current (Body Diode) ➀ — — -28 integral reverse p-n junction rectifier.

SM

V

Diode Forward Voltage — — -6.0 V Tj = 25°C, IS = -6.5A, VGS = 0V ➃

SD

t

Reverse Recovery Time — — 40 0 ns Tj = 25°C, IF = -6.5A, di/dt ≤ -100A/µs

rr

Q

Reverse Recovery Charge — — 4.0 µCV

RR

t

Forward Turn-On Time

on

Intrinsic turn-on time is negligible. T urn-on speed is substantially controlled by LS + LD.

Thermal Resistance

Parameter Min. Typ. Max. Units Test Conditions

R
R

thJC
thJA

Junction-to-Case — — 1.67
Junction-to-Ambient — — 30 K/W Typical socket mount

A

≤ -50V ➃

DD

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Fig. 1 — Typical Output Characteristics

Fig. 3 — Typical Transfer Characteristics

= 25°C

T

C

Fig. 2 — Typical Output Characteristics

Fig. 4 — Normalized On-Resistance Vs.Temperature

= 150°C

T

C

Fig. 5 — Typical Capacitance Vs. Drain-to-Source

Voltage

Fig. 6 — Typical Gate Charge Vs. Gate-to-Source

Voltage

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Fig. 7 — Typical Source-to-Drain Diode Forward

Voltage

Fig. 9 — Maximum Drain Current Vs. Case Temperature

Fig. 8 — Maximum Safe Operating Area

Fig. 10a — Switching Time Test Circuit

Fig. 10b — Switching Time Waveforms

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Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration

Fig. 12a — Unclamped Inductive Test Circuit

Fig. 12c — Max. Avalanche Energy vs. Current Fig. 13a — Gate Charge Test Circuit

Fig. 12b — Unclamped Inductive Waveforms

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➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.
(see figure 11)

➁ @ V

➂ I
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

= -50V, Starting TJ = 25°C,

DD

EAS = [0.5 * L * (I
Peak IL = -6.5A, VGS = -10V, 25 ≤ RG ≤ 200Ω

≤ -6.5A, di/dt ≤ -120A/µs,

SD

VDD ≤ BV

, TJ ≤ 150°C

DSS

2

) * [BV

L

➄ K/W = °C/W

W/K = W/°C

Fig. 13b — Basic Gate Charge Waveform

Case Outline and Dimensions — TO-204AA (Modified T O-3)

DSS

/(BV

DSS-VDD

)]

All dimensions are shown millimeters (inches)

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