Datasheet JANSR2N7440 Datasheet (Intersil)

JANSR2N7440

Data Sheet November 1999 File Number 4803

Formerly Available as FSS913A0R4,
Radiation Hardened, SEGR Resistant,
P-Channel Power MOSFETs

The Discrete Products Operation of Intersil has developeda
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.

Also availableat other radiation and screening levels.Seeus
on the web, Intersil’s home page: http://www.intersil.com.
Contact y our local Intersil Sales Office f or additional
information.

Ordering Information

PART NUMBER PACKAGE BRAND

JANSR2N7440 TO-257AA JANSR2N7440

Features

• 10A, -100V, r

• Total Dose

- Meets Pre-RAD Specifications to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm
V

up to 80% of Rated Breakdown and

DS

V

of 10V Off-Bias

GS

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 1.5nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm

- Usable to 3E14 Neutrons/cm

DS(ON)

= 0.280Ω

2

2

with

2

Symbol

D

G

S

Packaging

TO-257AA

S

D

G

DSS

DM

Die Family TA17796.
MIL-PRF-19500/659.

CAUTION: Beryllia Warning per MIL-S-19500

refer to package specifications.

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 1999

JANSR2N7440

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

JANSR2N7440 UNITS

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DS

DGR

-100 V

-100 V

Continuous Drain Current

TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

D

D
DM
GS

10 A

6A

30 A

±20 V

Maximum Power Dissipation

TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

T
T

56 W
22 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.45 W/oC

Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

STG

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

AS

S

SM

L

30 A
10 A
30 A

-55 to 150
300

o

C

o

C

(Distance >0.063in (1.6mm) from Case, 10s Max)

Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

4.4

g

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

DSSID

GS(TH)VGS

= 1mA, VGS = 0V -100 - - V

= VDS,

ID = 1mA

TC = -55oC - - -7.0 V
TC = 25oC -2.0 - -6.0 V
TC = 125oC -1.0 - - V

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

DSS

GSS

VDS = -80V,
VGS = 0V

TC = 25oC--25µA
TC = 125oC - - 250 µA

VGS = ±20V TC = 25oC - - 100 nA

TC = 125oC - - 200 nA
Drain to Source On-State Voltage V
Drain to Source On Resistance r

Turn-On Delay Time t

DS(ON)VGS

DS(ON)12ID

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge (Not on slash sheet) Q

g(TOT)VGS

Gate Charge at 12V Q
Threshold Gate Charge (Not on slash sheet) Q
Gate Charge Source Q
Gate Charge Drain Q
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

r

f

g(12)

g(TH)

gs

gd

JC

θ

JA

θ

= -12V, ID = 10A - - -3.10 V

= 6A,

VGS = -12V

VDD = -50V, ID = 10A,
RL = 5.0Ω, VGS = -12V,
RGS = 7.5Ω

TC = 25oC - 0.190 0.280 Ω

TC = 125oC - - 0.500 Ω

- - 20 ns

- - 55 ns

- - 45 ns

- - 35 ns

= 0V to -20V VDD = -50V,

VGS = 0V to -12V - 36 40 nC

ID = 10A

- - 60 nC

VGS = 0V to -2V - - 2.5 nC

- 6.6 7.4 nC

-1719nC

- - 2.2

o

C/W

--60oC/W

2

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage V
Reverse Recovery Time t

SD

rr

JANSR2N7440

ISD = 10A -0.6 - -1.8 V
ISD = 10A,dISD/dt = 100A/µs - - 160 ns

Electrical Specifications up to 100K RAD T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS

Drain to Source Breakdown Volts (Note 3) BV
Gate to Source Threshold Volts (Note 3) V
Gate to Body Leakage (Notes 2, 3) I
Zero Gate Leakage (Note 3) I
Drain to Source On-State Volts (Notes 1, 3) V
Drain to Source On Resistance (Notes 1, 3) r

DS(ON)12VGS

DSS

GS(TH)VGS

GSS
DSS

DS(ON)VGS

VGS = 0, ID = 1mA -100 - V

= VDS, ID = 1mA -2.0 -6.0 V
VGS = ±20V, VDS = 0V - 100 nA
VGS = 0, VDS = -80V - 25 µA

= -12V, ID = 10A - -3.10 V

= -12V, ID = 6A - 0.280 Ω

NOTES:

1. Pulse test, 300µs Max.

2. Absolute value.

3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BV

DSS

.

Single Event Effects (SEB, SEGR) Note 4

ENVIRONMENT (NOTE 5)

TEST SYMBOL

ION

SPECIES

TYPICAL LET

(MeV/mg/cm)

TYPICAL

RANGE (µ)

Single Event Effects Safe Operating Area SEESOA Ni 26 43 20 -100

Br 37 36 10 -100
Br 37 36 15 -80
Br 37 36 20 -50

NOTES:

4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.

5. Fluence = 1E5 ions/cm2 (typical), TC = 25oC.

6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

APPLIED

V

BIAS

GS

(V)

(NOTE 6)

MAXIMUM

VDSBIAS (V)

Performance Curves

LIMITING INDUCTANCE (HENRY)

1E-3

1E-4

1E-5

1E-6

1E-7

-30
DRAIN SUPPLY (V)

-300-100-10

LIMIT GAMMA DOT CURRENT TO I

ILM = 10A

30A

100A

300A

AS

LET = 26MeV/mg/cm2, RANGE = 43µ
LET = 37MeV/mg/cm2, RANGE = 36µ

V

(V)

GS

(V)

DS

V

-120
FLUENCE = 1E5 IONS/cm2 (TYPICAL)

-100

-80

-60

-40

-20

TEMP = 25oC

0

0101520255

FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. TYPICALDRAIN INDUCTANCEREQUIRED TO

3

-1000

Performance Curves (Continued)

JANSR2N7440

12

10

8

6

, DRAIN (A)

D

I

4

2

0

TC, CASE TEMPERATURE (oC)

500-50

100

FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs

TEMPERATURE

-12V

Q

G

150

100

10

1

, DRAIN CURRENT (A)

D

I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

0.1

-1
V

DS

DS(ON)

-10 -100

, DRAIN-TO-SOURCE VOLTAGE (V)

TC = 25oC

100µs

1ms

10ms
100ms

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

2.5
PULSE DURATION = 250ms, VGS = -12V, ID = 6A

2.0

DS(ON)

1.5

-300

Q

GS

V

G

Q

GD

CHARGE

1.0

NORMALIZED r

0.5

0.0

-80 -40 0 40 80 120 160
T

, JUNCTION TEMPERATURE (oC)

J

FIGURE 5. BASIC GATE CHARGE WAVEFORM FIGURE 6. TYPICALNORMALIZEDr

TEMPERA TURE

10

)

1

JC

θ

NORMALIZED

THERMAL RESPONSE (Z

0.1

0.01

0.001

0.5

0.2

0.1

0.05

0.02

0.01

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-5

10

-4

10

SINGLE PULSE

1/t2

+ T

JC

C

θ

-3

10

t, RECTANGULAR PULSE DURATION (s)

-2

10

P

DM

t

1

t

2

-1

10

0

10

DS(ON)

10

vs JUNCTION

1

FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE

4

Performance Curves (Continued)

40

10

, AVALANCHE CURRENT (A)

AS

I

1

Test Circuits and Waveforms

JANSR2N7440

STARTING TJ = 25oC

STARTING TJ = 150oC

IF R = 0

tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)

IF R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]

0.01

0.1

tAV, TIME IN AVALANCHE (ms)

FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING

110

VARY t

TO OBTAIN

P

REQUIRED PEAK I

0V

t

P

VGS≤ 20V

CURRENT

TRANSFORMER

50Ω

AS

ELECTRONIC SWITCH OPENS

WHEN I

V

DS

L

+

I

AS

-

50Ω

DUT

IS REACHED

AS

+

V

DD

-

50V-150V

BV

DSS

t

P

I

AS

t

AV

FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 10. UNCLAMPED ENERGY WAVEFORMS

t

t

d(ON)

90%

ON

t

r

V

DD

R

L

V

DS

V

DS

V

t

d(OFF)

DS

t

OFF

V

DD

t

f

90%

0V

V

GS

= -12V

DUT

R

GS

V

GS

10%

10%

10%

90%

50%50%

PULSE WIDTH

FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

5

JANSR2N7440

Screening Information

Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).

Delta Tests and Limits (JANS) T

PARAMETER SYMBOL TEST CONDITIONS MAX UNITS

Gate to Source Leakage Current I
Zero Gate Voltage Drain Current I
Drain to Source On Resistance r
Gate Threshold Voltage V

NOTES:

7. Or 100% of Initial Reading (whichever is greater).

8. Of Initial Reading.

Screening Information

TEST JANS

Unclamped Inductive Switching V
Thermal Response tH = 100ms; VH = -25V; IH = 1A; Limit = 85mV
Gate Stress VGS = -30V, t = 250µs
Pind Required
Pre Burn-In Tests (Note 9) MIL-S-19500 Group A,

Steady State Gate
Bias (Gate Stress)

Interim Electrical Tests (Note 9) All Delta Parameters Listed in the Delta Tests and Limits Table
Steady State Reverse

Bias (Drain Stress)

PDA 5%
Final Electrical Tests (Note 9) MIL-S-19500, Group A,

NOTE:

9. Test limits are identical pre and post burn-in.

= 25oC, Unless Otherwise Specified

C

GSS
DSS

DS(ON)

GS(TH)

VGS = ±20V ±20 (Note 7) nA
VDS = 80% Rated Value ±25 (Note 7) µA
TC = 25oC at Rated I
ID = 1.0mA ±20% (Note 8) V

GS(PEAK)

Subgroup 2 (All Static Tests at 25oC)
MIL-STD-750, Method 1042, Condition B

VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours

MIL-STD-750, Method 1042, Condition A
VDS = 80% of Rated Value,
TA = 150oC, Time = 240 hours

Subgroups 2 and 3

= -15V, L = 0.1mH; Limit = 30A

D

±20% (Note 8) Ω

Additional Screening Tests

PARAMETER SYMBOL TEST CONDITIONS MAX UNITS

Safe Operating Area SOA VDS = -80V, t = 10ms 1.9 A
Thermal Impedance ∆V

6

SD

tH = 500ms; VH = -25V; IH = 1A 125 mV

JANSR2N7440

Rad Hard Data Packages - Intersil Power Transistors

1. JANS Rad Hard - Standard Data Package

A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet

- Hi-Rel Lot Traveler

- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data

- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data

F. Group A - Attributes Data Sheet
G. Group B - Attributes Data Sheet
H. Group C - Attributes Data Sheet

I. Group D - Attributes Data Sheet

2. JANS Rad Hard - Optional Data Package

A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet

- Hi-Rel Lot Traveler

- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data

- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data

- X-Ray and X-Ray Report

F. Group A - Attributes Data Sheet

- Hi-Rel Lot Traveler

- Subgroups A2, A3, A4, A5 and A7 Data

G. Group B - Attributes Data Sheet

- Hi-Rel Lot Traveler

- Subgroups B1, B3, B4, B5 and B6 Data

H. Group C - Attributes Data Sheet

- Hi-Rel Lot Traveler

- Subgroups C1, C2, C3 and C6 Data

I. Group D - Attributes Data Sheet

- Hi-Rel Lot Traveler

- Pre and Post Radiation Data

7

TO-257AA

3 LEAD JEDEC TO-257AA HERMETIC METAL PACKAGE

JANSR2N7440

E

Q

ØP

H

1

A

A

1

SYMBOL

A 0.190 0.200 4.83 5.08 -

A

1

INCHES MILLIMETERS

NOTESMIN MAX MIN MAX

0.035 0.045 0.89 1.14 -

Øb 0.025 0.035 0.64 0.88 2, 3

D

Øb

0.060 0.090 1.53 2.28 -

1

D 0.645 0.665 16.39 16.89 ­E 0.410 0.420 10.42 10.66 -

e 0.100 TYP 2.54 TYP 4

L

1

L

123

0.065 R TYP.

Øb

e

e

1

Øb

1

J

1

e

1

H

1

J

1

L 0.600 0.650 15.24 16.51 -

L

1

ØP 0.140 0.150 3.56 3.81 -

Q 0.113 0.133 2.88 3.37 -

NOTES:

0.200 BSC 5.08 BSC 4

0.230 0.250 5.85 6.35 -

0.110 0.130 2.80 3.30 4

- 0.035 - 0.88 -

1. These dimensions are within allowabledimensions of Rev.Bof
JEDEC TO-257AA dated 9-88.

2. Add typically 0.002 inches (0.05mm) for solder coating.

3. Lead dimension (without solder).

4. Positionoflead tobemeasured 0.150 inches(3.81mm)from bottom
of dimension D.

5. Die to base BeO isolated, terminals to case ceramic isolated.

6. Controlling dimension: Inch.

7. Revision 1 dated 1-93.

WARNING!

BERYLLIA WARNING PER MIL-S-19500

Packagescontaining beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical operation
which will produce dust containing any beryllium compound. Packages containing any beryllium compound shall not be
subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its’ compounds.

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only.Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site www.intersil.com

Sales Office Headquarters

NORTH AMERICA

Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: [phone]
FAX: [phone]

EUROPE

Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: [phone]
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ASIA

Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: [phone]
FAX: [phone]

8