Datasheet JA101P Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D186

JA101

PNP general purpose transistor

Product specification
Supersedes data of 1997 Mar 10
File under Discrete Semiconductors, SC10

1998 Aug 04

Philips Semiconductors Product specification

PNP general purpose transistor JA101

FEATURES

• Low current (max. 100 mA)

• Low voltage (max. 45 V).

PINNING

PIN DESCRIPTION

1 base
2 collector

APPLICATIONS

3 emitter

• General purpose switching and amplification.

DESCRIPTION

PNP transistor in a TO-92; SOT54 plastic package.
NPN complement: JC501.

handbook, halfpage

1

2

3

MAM285

2

1

3

Fig.1 Simplified outline (TO-92; SOT54)

and symbol.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
I
P
h
f

CBO
CEO

CM

tot

FE

T

collector-base voltage open emitter −−50 V
collector-emitter voltage open base −−45 V
peak collector current −−200 mA
total power dissipation T

≤ 25 °C − 500 mW

amb

DC current gain IC= −1 mA; VCE= −5 V 135 600
transition frequency IC= −10 mA; VCE= −5 V; f = 100 MHz 100 − MHz

1998 Aug 04 2

Philips Semiconductors Product specification

PNP general purpose transistor JA101

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

BM

P

tot

T

stg

T

j

T

amb

Note

1. Transistor mounted on an FR4 printed-circuit board.

collector-base voltage open emitter −−50 V
collector-emitter voltage open base −−45 V
emitter-base voltage open collector −−5V
collector current (DC) −−100 mA
peak collector current −−200 mA
peak base current −−100 mA
total power dissipation T

≤ 25 °C; note 1 − 500 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient note 1 250 K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

1998 Aug 04 3

Philips Semiconductors Product specification

PNP general purpose transistor JA101

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

I

EBO

h

FE

V

CEsat

V

BEsat

V

BE

C

c

C

e

f

T

F noise figure I

collector cut-off current IE= 0; VCB= −45 V −−−15 nA

I

= 0; VCB= −45 V; Tj= 125 °C −−−4µA

E

emitter cut-off current IC= 0; VEB= −5V −−−100 nA
DC current gain IC= −1 mA; VCE= −5V

JA101 135 − 600
JA101P 135 − 270
JA101Q 200 − 400
JA101R 300 − 600

collector-emitter saturation voltage IC= −10 mA; IB= −0.5 mA −−−300 mV

= −100 mA; IB= −5mA −−500 − mV

I

C

base-emitter saturation voltage IC= −10 mA; IB= −0.5 mA −−700 − mV

I

= −100 mA; IB= −5mA −−850 − mV

C

base-emitter voltage IC= −2 mA; VCE= −5V −550 −−700 mV
collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz −−6pF
emitter capacitance IC=ic= 0; VEB= −0.5 V; f = 1 MHz − 12 − pF
transition frequency IC= −10 mA; VCE= −5 V; f = 100 MHz 100 130 − MHz

= −200 µA; VCE= −5 V; RS=2kΩ;

C

−−10 dB

f = 1 kHz; B = 200 Hz

1998 Aug 04 4

Philips Semiconductors Product specification

PNP general purpose transistor JA101

PACKAGE OUTLINE

Plastic single-ended leaded (through hole) package; 3 leads SOT54

c

E

d

A L

1

D

2

3

b

1

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

A

5.2

mm

5.0

OUTLINE
VERSION

SOT54 TO-92 SC-43

b

0.48

0.40

b

c

D

d

1

0.66

0.45

0.40

4.8

4.4

0.56

IEC JEDEC EIAJ

E

1.7

4.2

1.4

3.6

REFERENCES

2.54

e

e

1

1.27

L

14.5

12.7

L

1

(1)

L

1

2.5

EUROPEAN

PROJECTION

b

e

1

e

ISSUE DATE

97-02-28

1998 Aug 04 5

Philips Semiconductors Product specification

PNP general purpose transistor JA101

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1998 Aug 04 6

Philips Semiconductors Product specification

PNP general purpose transistor JA101

NOTES

1998 Aug 04 7

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© Philips Electronics N.V. 1998 SCA60
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Printed in The Netherlands 115104/00/03/pp8 Date of release: 1998 Aug04 Document order number: 9397 750 04108