Datasheet J310ZL1, J310RLRP, J310, J308 Datasheet (MOTOROLA)

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by J308/D

JFET VHF/UHF Amplifiers

N–Channel — Depletion

GATE

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V
Gate–Source Voltage V
Forward Gate Current I
Total Device Dissipation @ TA = 25°C

Derate above 25°C
Junction Temperature Range T
Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (T

Characteristic

DS
GS

GF

P

D

J

stg

= 25°C unless otherwise noted)

A

OFF CHARACTERISTICS

Gate–Source Breakdown Voltage

(IG = –1.0 µAdc, VDS = 0)
Gate Reverse Current

(VGS = –15 Vdc, VDS = 0, TA = 25°C)

(VGS = –15 Vdc, VDS = 0, TA = +125°C)
Gate Source Cutoff Voltage

(VDS = 10 Vdc, ID = 1.0 nAdc) J308

ON CHARACTERISTICS

Zero–Gate–Voltage Drain Current

(VDS = 10 Vdc, VGS = 0) J308

Gate–Source Forward Voltage

(VDS = 0, IG = 1.0 mAdc)

(1)

SMALL–SIGNAL CHARACTERISTICS

Common–Source Input Conductance

(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) J308

Common–Source Output Conductance

(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)
Common–Gate Power Gain

(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)

1. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 3.0%.

25 Vdc
25 Vdc
10 mAdc

350

2.8
–65 to +125 °C
–65 to +150 °C

J309
J310

J309
J310

J309
J310

J308

1 DRAIN

J309
J310

3

2 SOURCE

mW

mW/°C

Symbol Min Typ Max Unit

V

(BR)GSS

I

GSS

V

GS(off)

I

DSS

V

GS(f)

Re(yis)

Re(yos) — 0.25 — mmhos

G

pg

–25 — — Vdc

—
—

–1.0
–1.0
–2.0

12
12
24

— — 1.0 Vdc

—
—
—

— 16 — dB

Motorola Preferred Devices

1

2

3

CASE 29–04, STYLE 5

TO–92 (TO–226AA)

—
—

—
—
—

—
—
—

0.7

0.7

0.5

–1.0
–1.0

–6.5
–4.0
–6.5

60
30
60

—
—
—

nAdc
µAdc

Vdc

mAdc

mmhos

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1997

1

J308 J309 J310

ELECTRICAL CHARACTERISTICS

Characteristic

(TA = 25°C unless otherwise noted) (Continued)

SMALL–SIGNAL CHARACTERISTICS (continued)

Common–Source Forward Transconductance

(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)

Common–Gate Input Conductance

(VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz)

Common–Source Forward Transconductance

(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) J308

Common–Source Output Conductance

(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)

Common–Gate Forward Transconductance

(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) J308

Common–Gate Output Conductance

(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) J308

Gate–Drain Capacitance

(VDS = 0, VGS = –10 Vdc, f = 1.0 MHz)

Gate–Source Capacitance

(VDS = 0, VGS = –10 Vdc, f = 1.0 MHz)

FUNCTIONAL CHARACTERISTICS

Noise Figure

(VDS = 10 Vdc, ID = 10 mAdc, f = 450 MHz)

Equivalent Short–Circuit Input Noise Voltage

(VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz)

J309
J310

J309
J310

J309
J310

Symbol Min Typ Max Unit

Re(yfs) — 12 — mmhos

Re(yig) — 12 — mmhos

g

fs

g

os

g

fg

g

og

C

gd

C

gs

NF — 1.5 — dB

e

n

8000

10000

8000

— — 250 µmhos

—
—
—

—
—
—

— 1.8 2.5 pF

— 4.3 5.0 pF

— 10 —

—
—
—

13000
13000
12000

150
100
150

20000
20000
18000

—
—
—

—
—
—

µmhos

µmhos

µmhos

nVńHz

Ǹ

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

J308 J309 J310

50

50

310

F

W

T

T

Y

Ω

SOURCE

Figure 1. 450 MHz Common–Gate Amplifier Test Circuit

70
60

50

40

30

, DRAIN CURRENT (mA)I

20

D

10

–5.0 –4.0 –3.0 –2.0

VDS = 10 V

I

DSS

+25°C

ID – VGS, GATE–SOURCE VOLTAGE (VOLTS)

I

– VGS, GATE–SOURCE CUTOFF VOLTAGE (VOLTS)

DSS

Figure 2. Drain Current and Transfer

Characteristics versus Gate–Source V oltage

U

C3

L1

C1

C5

1.0 k

+V

DD

C1 = C2 = 0.8 – 10 pF, JFD #MVM010W.
C3 = C4 = 8.35 pF Erie #539–002D.
C5 = C6 = 5000 pF Erie (2443–000).
C7 = 1000 pF, Allen Bradley #FA5C.
RFC = 0.33 µH Miller #9230–30.
L1 = One Turn #16 Cu, 1/4″ I.D. (Air Core).
L2P = One Turn #16 Cu, 1/4″ I.D. (Air Core).
L2S = One Turn #16 Cu, 1/4″ I.D. (Air Core).

70

+25°C

+150°C

+150°C

60

50

40

30

20

10

0

TA = –55°C

+25°C

–55°C

–1.0 0

C7

, SATURATION DRAIN CURRENT (mA)

DSS

I

L2

P

C2

C6

RFC

35
30

VDS = 10 V
f = 1.0 MHz

25

20

15

10

5.0

, FORWARD TRANSCONDUCTANCE (mmhos)Y

fs

0

5.0 4.0 3.0 2.0

Ω

LOAD

L2

S

C4

TA = –55°C

+25°C

+150°C

–55°C

+150°C

1.0 0

VGS, GATE–SOURCE VOLTAGE (VOLTS)

Figure 3. Forward Transconductance

versus Gate–Source V oltage

+25°C

100 k

µ

Y

V

GS(off)

V

GS(off)

fs

= –2.3 V =
= –5.7 V =

ANCE ( mhos)

10 k

RANSCONDUC

1.0 k

ARD
OR

,

fs

100

0.01 0.10.2 0.3 0.5 1.0 2.03.0 5.0 10 20 30 50 100

Figure 4. Common–Source Output

Admittance and Forward Transconductance

Y

os

ID, DRAIN CURRENT (mA)

versus Drain Current

1.0 k

Y

fs

µ

100

10

, OUTPUT ADMITTANCE ( mhos)Y

1.0

Motorola Small–Signal Transistors, FETs and Diodes Device Data

os

10

7.0

4.0

CAPACITANCE (pF)

1.0
0

5.0 4.0 3.0 2.0 1.0 06.07.08.09.010

VGS, GATE SOURCE VOLTAGE (VOLTS)

Figure 5. On Resistance and Junction

Capacitance versus Gate–Source V oltage

120

R

DS

96

72

C

gs

48

, ON RESISTANCE (OHMS)R

DS

C

gd

24

0

3

J308 J309 J310

30

VDS = 10 V

24

ID = 10 mA

| (mmhos)

18

22

|, |Y

21

12

|, |Y

11

|Y

6.0

0

TA = 25°C

f, FREQUENCY (MHz)

Y

Y

Y

Figure 6. Common–Gate Y Parameter

Magnitude versus Frequency

θ21, θ

11

50°

180°

θ

22

40°

170°

160°

150°

140°

130°

30°

20°

10°

θ

12

0°

f, FREQUENCY (MHz)

θ

11

θ

21

VDS = 10 V
ID = 10 mA
TA = 25°C

|S21|, |S11|

0.45

3.0

2.4

11

21

22

Y

12

1.8
(mmhos)

12

1.2

Y

0.6

1000100 200 300 500 700

0.85

0.79

0.73

0.67

0.61

0.55

0.39

0.33

0.27

0.21

0.15

VDS = 10 V
ID = 10 mA
TA = 25°C

f, FREQUENCY (MHz)

S

22

S

21

S

11

S

12

|S12|, |S22|

0.060

0.048

0.036

0.024

0.012

1000100 200 300 500 700

1.00

0.98

0.96

0.94

0.92

0.90

Figure 7. Common–Gate S Parameter

Magnitude versus Frequency

1000100 200 300 500 700

θ12, θ

–20°

–20°
–40°
–60°
–80°
–100°
–120°
–140°
–160°
–180°
–200°

22

87°

86°

85°

84°

83°

82°

θ11, θ

–20°

–40°

–60°

–80°

–100°

–120°

12

120°

100°

80°

60°

40°

20°

θ

11

θ

21

θ

12

VDS = 10 V
ID = 10 mA
TA = 25°C

f, FREQUENCY (MHz)

θ

22

θ

θ21, θ

22

0

–20°

–40°

–60°

θ

21

–80°

11

–100°

1000100 200 300 500 700

Figure 8. Common–Gate Y Parameter

Phase–Angle versus Frequency

8.0
VDD = 20 V

7.0
f = 450 MHz

BW ≈ 10 MHz

6.0
CIRCUIT IN FIGURE 1

5.0

4.0

3.0

NF , NOISE FIGURE (dB)

2.0

1.0

0

4.0 6.0 8.0 10 12 14 16 18 20 22 24

G

pg

NF

Figure 10. Noise Figure and

Power Gain versus Drain Current

4

Figure 9. S Parameter Phase–Angle

versus Frequency

24
21
18
15
12

9.0
pg

G , POWER GAIN (dB)

6.0

3.0

0

7.0

6.0

5.0

4.0

VDS = 10 V
ID = 10 mA
TA = 25°C

3.0
CIRCUIT IN FIGURE 1

2.0

NF , NOISE FIGURE (dB)

1.0

0

G

pg

NF

50 100 200 300 500 700 1000
f, FREQUENCY (MHz)ID, DRAIN CURRENT (mA)

Figure 11. Noise Figure and Power Gain

versus Frequency

Motorola Small–Signal Transistors, FETs and Diodes Device Data

26

22

18

14

10

pg

G , POWER GAIN (dB)

6.0

2.0

J308 J309 J310

INPUT
RS = 50 Ω

C1

C2

U310

S

L1

L2

V

S

C3

G

SHIELD

D

C4

C6

BW (3 dB) – 36.5 MHz
ID – 10 mAdc

L3

OUTPUT
RL = 50 Ω

C5

L4

V

D

VDS – 20 Vdc
Device case grounded
IM test tones – f1 = 449.5 MHz, f2 = 450.5 MHz

C1 = 1–10 pF Johanson Air variable trimmer.
C2, C5 = 100 pF feed thru button capacitor.
C3, C4, C6 = 0.5–6 pF Johanson Air variable
trimmer.

L1 = 1/8″ x 1/32″ x 1–5/8″ copper bar.
L2, L4 = Ferroxcube Vk200 choke.
L3 = 1/8″ x 1/32″ x 1–7/8″ copper bar.

Figure 12. 450 MHz IMD Evaluation Amplifier

Amplifier power gain and IMD products are a function of the load impedance. For the amplifier design shown above with C4 and
C6 adjusted to reflect a load to the drain resulting in a nominal power gain of 9 dB, the 3rd order intercept point (IP) value is
29 dBm. Adjusting C4, C6 to provide larger load values will result in higher gain, smaller bandwidth and lower IP values. For
example, a nominal gain of 13 dB can be achieved with an intercept point of 19 dBm.

+40
+20

–20
–40
–60

–80

OUTPUT POWER PER TONE (dBm)

–100
–120

U310 JFET
VDS = 20 Vdc
ID = 10 mAdc

0

F1 = 449.5 MHz
F2 = 450.5 MHz

–120

FUNDAMENTAL OUTPUT

–100 –80

INPUT POWER PER TONE (dBm)

3RD ORDER INTERCEPT POINT

3RD ORDER IMD OUTPUT

–60

–40 –20 0

Example of intercept point plot use:
Assume two in–band signals of –20 dBm at the amplifier input.
They will result in a 3rd order IMD signal at the output of
–90 dBm. Also, each signal level at the output will be
–11 dBm, showing an amplifier gain of 9.0 dB and an
intermodulation ratio (IMR) capability of 79 dB. The gain and
IMR values apply only for signal levels below comparison.

+20

Figure 13. Two Tone 3rd Order Intercept Point

Motorola Small–Signal Transistors, FETs and Diodes Device Data

5

J308 J309 J310

R

SEATING
PLANE

XX

P ACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

A

B

P

L

F

K

D

G

H

V

1

C

SECTION X–X

N

J

N

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.

DIM MIN MAX MIN MAX

A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.022 0.41 0.55
F 0.016 0.019 0.41 0.48
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
V 0.135 ––– 3.43 –––

MILLIMETERSINCHES

CASE 029–04

(TO–226AA)

ISSUE AD

STYLE 5:

PIN 1. DRAIN

2. SOURCE

3. GATE

6

Motorola Small–Signal Transistors, FETs and Diodes Device Data

J308 J309 J310

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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Opportunity/Affirmative Action Employer.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

7

J308 J309 J310

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

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J308/D