Datasheet J305, J304, SMPJ304, SMPJ305 Datasheet (Interfet)

B-60 01/99

J304, J305

N-Channel Silicon Junction Field-Effect Transistor

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Absolute maximum ratings at TA= 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage – 30 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 360 mW
Power Derating 3.27 mW/°C

TOÐ226AA Package

Dimensions in Inches (mm)

Pin Configuration

1 Drain, 2 Source, 3 Gate

Surface Mount

SMPJ304, SMPJ305

At 25°C free air temperature:

J304 J305 Process NJ26

Static Electrical Characteristics

Min Typ Max Min Typ Max Unit Test Conditions

Gate Source Breakdown Voltage V

(BR)GSS

– 30 – 30 V IG= – 1µA, VDS= ØV

Gate Reverse Current I

GSS

– 100 – 100 pA VGS= – 20V, VDS= ØV

Gate Source Cutoff Voltage V

GS(OFF)

– 2 – 6 – 0.5 – 3 V VDS= 15V, ID= 1 nA

Drain Saturation Current (Pulsed) I

DSS

5151 8mAV

DS

= 15V, VGS= ØV

Dynamic Electrical Characteristics

Common Source Forward

4500 7500 3000 µS VDS= 15V, VGS= ØV f = 1 kHz

g

fs

3000 µS VDS= 15V, VGS= ØV f = 100 MHz

Transconductance

4200 µS VDS= 15V, VGS= ØV f = 400 MHz

Common Source Output Conductance g

os

50 50 µS VDS= 15V, VGS= ØV f = 1 kHz

Common Source Input Capacitance C

iss

33pFV

DS

= 15V, VGS= ØV f = 1 MHz

Common Source Reverse

C

rss

0.85 0.85 pF VDS= 15V, VGS= ØV f = 1 MHz

Transfer Capacitance
Common Source Output Capacitance C

oss

11pFV

DS

= 15V, VGS= ØV f = 1 MHz

Common Source Output Conductance g

os

60 60 µS VDS= 15V, VGS= ØV f = 100 MHz
80 µS VDS= 15V, VGS= ØV f = 400 MHz

Common Source Output Susceptance b

os

800 800 µS VDS= 15V, VGS= ØV f = 100 MHz

3600 µS VDS= 15V, VGS= ØV f = 400 MHz

Common Source Input Conductance g

is

80 80 µS VDS= 15V, VGS= ØV f = 100 MHz

800 µS VDS= 15V, VGS= ØV f = 400 MHz

Common Source Input Susceptance b

is

2000 2000 µS VDS= 15V, VGS= ØV f = 100 MHz
7500 µS VDS= 15V, VGS= ØV f = 400 MHz

Common Source Power Gain G

ps

20 dB VDS= 15V, ID= 5 mA f = 100 MHz
11 dB VDS= 15V, ID= 5 mA f = 400 MHz

Noise Figure NF

1.7 dB

V

DS

= 15V, ID= 5 mA

f = 100 MHz

3.8 dB

R

G

= 1 Ω

f = 400 MHz

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Databook.fxp 1/13/99 2:09 PM Page B-60