Page 1
Advance Technical Information
TrenchT2
TM
GigaMOS
TM
IXTZ550N055T2
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
T
J
T
JM
T
stg
V
ISOL
T
L
T
SOLD
V
ISOL
F
C
Weight 3 g
TJ= 25°C to 175°C 55V
TJ= 25°C to 175°C, RGS = 1MΩ 55 V
Continuous ±20 V
Transient ±30 V
TC= 25°C 550 A
TC= 25°C, Pulse Width Limited by T
JM
1650 A
TC= 25°C 200 A
TC= 25°C3J
TC= 25°C 600 W
-55 ... +175 °C
175 °C
-55 ... +175 °C
50/60 Hz, RMS t = 1 minute 2500 V~
I
≤ 1mA t = 1 second 3000 V~
ISOL
1.6mm (0.062 in.) from Case for 10s 300 °C
Plastic Body for 10s 260 °C
50/60 Hz, 1 Minute 2500 V~
Mounting Force 20..120 / 4.5..27 N/lb.
V
DSS
I
D25
R
DS(on)
DE475
= 55V
= 550A
≤≤
1.0m
≤
≤≤
ΩΩ
Ω
ΩΩ
D
D
D
G
S
S
Isolated Tab
G = Gate D = Drain
S = Source
Features
z
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
z
Isolated Substrate
- Excellent Thermal Transfer
- Increased Temperature and Power
Cycling Capability
- High Isolation Voltage (2500V~)
z
175°C Operating Temperature
z
Very High Current Handling
Capability
z
Fast Intrinsic Diode
z
Avalanche Rated
z
Very Low R
DS(on)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
V
I
GSS
I
DSS
DSS
GS(th)
VGS= 0V, ID = 250μA 55 V
VDS= VGS, ID = 250μA 2.0 4.0 V
VGS= ±20V, VDS = 0V ±200 nA
VDS= V
, VGS = 0V 10 μA
DSS
TJ = 150°C 1.5 mA
R
DS(on)
© 2010 IXYS CORPORATION, All Rights Reserved
VGS= 10V, ID = 100A, Note 1 1.0 mΩ
Advantages
z
Easy to Mount
z
Space Savings
z
High Power Density
Applications
z
DC-DC Converters and Off-Line UPS
z
Primary-Side Switch
z
High Speed Power Switching
Applications
DS100243(02/10)
Page 2
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
IXTZ550N055T2
g
fs
C
iss
C
oss
C
rss
R
GI
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
VDS = 10V, ID = 60A, Note 1 95 160 S
40 nF
VGS = 0V, VDS = 25V, f = 1MHz 4970 pF
1020 pF
Gate Input Resistance 1.36 Ω
45 ns
Resistive Switching Times
V
= 10V, VDS = 0.5 • V
GS
R
= 1Ω (External)
G
DSS
, ID = 200A
40 ns
90 ns
230 ns
595 nC
VGS = 10V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
DSS
150 nC
163 nC
0.25 °C/W
0.15 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
VGS = 0V 550 A
Repetitive, Pulse Width Limited by T
JM
1700 A
IF = 100A, VGS = 0V, Note 1 1.2 V
100 ns
IF = 100A, VGS = 0V
5 A
-di/dt = 100A/μs
250 nC
V
= 27.5V
R
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Page 3
IXTZ550N055T2
V6V
Fig. 1. Ou tp u t C haracteristics @ TJ = 25ºC
300
250
200
150
- Amperes
D
I
100
50
0
0.00 0.05 0.10 0.15 0.20 0.25 0.30
V
= 15V
GS
10V
9V
8V
VDS - Volts
7V
6V
5V
4V
Fig. 3. Ou tp u t C haracteristics @ TJ = 150ºC
300
250
200
150
- Amperes
D
I
100
V
= 15V
GS
10V
8V
7V
5
Fig. 2. Exten d ed Output C h ar acter i sti cs @ TJ = 25ºC
350
V
= 15V
GS
300
10V
250
200
150
- Amperes
D
I
100
50
0
0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6
Fig. 4. Normalized R
2.0
V
= 10V
GS
1.8
I D < 550A
1.6
1.4
- Normalized
1.2
DS(on)
R
1.0
8V
7V
6V
5V
4V
VDS - Volts
vs. Juncti o n Temperature
DS(on)
50
0
0 0.1 0.2 0.3 0.4 0.5 0.6
4V
VDS - Volts
Fig. 5. N o r mal i z ed R
2.4
V
= 10V
GS
2.2
15V
2.0
1.8
1.6
- Normalized
1.4
DS(on)
1.2
R
1.0
0.8
0.6
0 50 100 150 200 250 300
vs. Drain Current
DS(on)
TJ = 175ºC
TJ = 25ºC
ID - Amperes
0.8
0.6
-50 -25 0 25 50 75 100 125 150 175
TJ - Degrees Centigrade
Fig. 6. D r ai n Curr ent vs. Case Temperatu r e
600
500
400
300
- Amperes
D
I
200
100
0
-50 -25 0 25 50 75 100 125 150 175
TC - Degrees Centigr ade
© 2010 IXYS CORPORATION, All Rights Reserved
Page 4
IXTZ550N055T2
Fig. 7. Input Admittance
220
200
180
160
140
120
100
- Amperes
D
I
80
60
40
20
0
2.5 3. 0 3.5 4.0 4. 5 5.0 5.5
T
J
= 150ºC
25ºC
- 40ºC
VGS - Volts
Fig. 9. Forward Voltage Drop of Intrinsic Diode
300
250
200
150
- Amperes
S
I
100
50
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
T
= 150ºC
J
VSD - Volts
T
J
= 25ºC
Fig. 8. Transconductance
250
200
T
= - 40ºC
J
25ºC
150
150ºC
- Siemens
100
f s
g
50
0
0 20 40 60 80 100 120 140 160 180 200 220
ID - Amperes
Fig. 10. Gate Charge
10
V
= 27.5V
DS
9
I
= 275A
D
8
I
= 10mA
G
7
6
5
- Volts
GS
4
V
3
2
1
0
0 100 200 300 400 500 600
QG - Na noC oulo mbs
Fig. 11. Capacitance
100
C
iss
10
C
oss
1
C
Capacitance - NanoFarads
= 1 MHz
f
0.1
0 5 10 15 20 25 30 35 40
rss
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 12. Forward-Bias Safe Operating Area
10,000
R
Limit
DS(on)
1,000
100
- Amperes
D
I
10
TJ = 175ºC
T
= 25ºC
C
Single Pulse
1
0110100
VDS - Volts
25µs
100µs
1ms
10ms
100ms
DC
Page 5
IXTZ550N055T2
(
)
(
)
(
)
(
)
Fig. 1 3. Resisti ve Tur n-on R ise T i me
48
R
= 1 , VGS = 10V
G
46
44
42
40
38
- Nanoseconds
r
t
36
34
32
= 27.5V
V
DS
25 35 45 55 65 75 85 95 105 115 125
vs. Junction Temperature
I D = 200A
I D = 100A
TJ - Degrees Centigrade
Fig. 1 5. Resistive Tur n-on Swi t ch ing Times
vs. Gate Resistance
400
t
r
350
TJ = 125ºC, VGS = 10V
V
= 27.5V
300
250
200
150
- Nanoseconds
r
t
100
DS
I D = 200A
50
0
1.01.52.02.53.03.54.04.55.0
t
d(on)
- - - -
I D = 100A
RG - Ohms
120
105
90
75
60
45
30
15
0
Fig. 14. R esistive Turn -o n R i se Time
vs. Drai n C u r r e nt
48
R
= 1 , VGS = 10V
G
46
44
42
40
38
- Nanoseconds
r
t
36
34
32
= 27.5V
V
DS
TJ = 125ºC
TJ = 25ºC
40 60 80 100 120 140 160 180 200
ID - Amperes
Fig. 16. R esi sti ve Tur n -o f f Swi tch i n g Times
vs. Junction Temperature
350
t
300
t
d
on
- Nanoseconds
250
200
I D = 200A
150
- Nanoseconds
f
t
100
50
0
25 35 45 55 65 75 85 95 105 115 125
I D = 100A
f
RG = 1, VGS = 10V
V
= 27.5V
DS
t
d(off)
- - - -
TJ - Degrees Centigrade
150
140
130
120
110
100
90
80
t
d
off
- Nanoseconds
Fig. 1 7. Resistive Tur n-off Swit ch ing Times
vs. Drai n C u r r en t
350
t
300
250
200
150
- Nanoseconds
f
t
100
50
0
40 60 80 100 120 140 160 180 200
TJ = 125ºC
TJ = 125ºC
f
RG = 1, VGS = 10V
V
DS
TJ = 25ºC
ID - Amperes
= 27.5V
t
d(off)
- - - -
180
160
140
120
100
80
60
40
t
d
off
- Nanoseconds
500
400
300
200
- Nanoseconds
f
t
100
Fig. 18. R esistive Turn -o ff Swi tc h i n g Times
vs. Gate Resi stan ce
500
t
f
TJ = 125ºC, VGS = 10V
V
= 27.5V
DS
0
1.01.52.02.53.03.54.04.55.0
t
d(off)
- - - -
I D = 200A, 100A
RG - Ohms
400
300
200
100
0
t
d
off
- Nanoseconds
© 2010 IXYS CORPORATION, All Rights Reserved
Page 6
IXTZ550N055T2
Fig. 19. Maxim u m Transien t Thermal Imp ed ance
1.000
0.100
- ºC / W
(th)JC
Z
0.010
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse W idth - Seconds
DE475 (IXTZ) Outline
G
S
S
D
D
D
D
D
D
G
S
S
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: TZ550N055T2 (V9)2-24-10
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