Page 1
Polar
TM
HiPerFET
Power MOSFET
Electrically Isolated Tab
N-Channel Enhancement Mode
Avalanche Rated
Fast Recovery Diode
IXTR 200N10P
V
I
D25
R
DSS
DS(on)
= 100 V
= 120 A
≤≤
≤ 8 m
≤≤
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt I
TJ= 25° C to 175° C 100 V
TJ= 25° C to 175° C; RGS = 1 MΩ 100 V
±20 V
±30 V
TC= 25° C 120 A
External lead current limit 75 A
TC= 25° C, pulse width limited by T
JM
400 A
TC= 25° C60A
TC= 25° C 100 mJ
TC= 25° C4J
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
, 10 V/ns
DSS
TJ≤ 150° C, RG = 4 Ω
P
D
T
J
T
JM
T
stg
V
ISOL
F
C
TC= 25° C 300 W
-55 ... +175 °C
175 °C
-55 ... +150 °C
50/60 Hz, RMS, 1 minute 2500 V~
Mounting Force 20..120/4.6..20 Nm/lb
Weight 5g
Symbol Test Conditions Characteristic Values
(TJ = 25° C, unless otherwise specified) Min. Typ. Max.
BV
V
I
GSS
I
DSS
DSS
GS(th)
VGS= 0 V, ID = 250 µA 100 V
VDS= VGS, ID = 500µA 3.0 5.0 V
VGS= ±30 VDC, VDS = 0 ±100 nA
VDS= V
V
DSS
= 0 V TJ = 150° C 250 µA
GS
25 µA
ISOPLUS 247
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low drain to tab capacitance(<30pF)
l
Avalanche voltage rated
l
Fast recovery intrinsic diode
Applications
l
DC-DC converters
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
AC motor control
Advantages
l
Easy assembly
l
Space savings
l
High power density
VGS= 0 V TJ = 175° C 1000 µA
TM
(IXTR)
E153432
ISOLATED TAB
G = Gate D = Drain
S = Source
R
DS(on)
VGS= 10 V, ID = 60 A 8.0 m Ω
VGS= 15 V, ID = 400A 5.5 m Ω
© 2006 IXYS All rights reserved
DS99365E(03/06)
Page 2
IXTR 200N10P
Symbol Test Conditions Characteristic Values
= 25° C, unless otherwise specified)
J
Min. Typ. Max.
7600 pF
860 pF
30 ns
90 ns
235 nC
135 nC
0.5 ° C/W
0.15 ° C/W
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
(T
VDS= 10 V; ID = 100 A, Note 1 60 97 S
VGS = 0 V, VDS = 25 V, f = 1 MHz 2900 pF
VGS = 10 V, VDS = 0.5 V
, ID = 60 A 35 ns
DSS
RG = 3.3 Ω (External) 150 ns
VGS= 10 V, VDS = 0.5 V
, ID = 100 A 50 nC
DSS
Source-Drain Diode Characteristic Values
(T
Symbol Test Conditions Min. Typ. Max.
= 25° C, unless otherwise specified)
J
ISOPLUS247 (IXTR) Outline
I
S
I
SM
V
SD
t
rr
VGS = 0 V 200 A
Repetitive 400 A
IF = IS, VGS = 0 V, Note 1 1.5 V
IF = 25 A, dI/dt = 100 A/µs 100 ns
Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
Page 3
IXTR 200N10P
Fig. 1. Output Characteristics
º
C
@ 25
200
175
150
125
100
- Amperes
75
D
I
50
25
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
V
= 10V
GS
9V
V
- Volts
D S
8V
7V
6V
Fig. 3. Output Characte r is tics
º
= 10V
D S
C
8V
7V
6V
5V
- Volts
@ 150
200
V
175
150
125
100
- Amperes
D
75
I
50
25
0
0 0.5 1 1.5 2 2.5 3 3.5
GS
9V
V
Fig. 2. Extende d Output Ch ar acte ristics
º
C
@ 25
350
V
= 10V
GS
300
250
200
150
- Amperes
D
I
100
50
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Fig . 4. R
9V
8V
7V
6V
V
- Volts
D S
Norm alized to ID = 100A
DS(on
)
Value vs. Junction Tem perature
2.4
VGS = 10V
2
I
= 200A
D
ID = 100A
1
-50 -25 0 25 50 75 100 125 150 175
T
- Degrees Centigrade
J
- Normalized
R
2.2
1.8
1.6
1.4
1.2
D S ( o n )
0.8
0.6
Fig . 5. R
DS(on)
Value vs . Drain Curre nt
2.4
2.2
2
1.8
1.6
- Normalized
D S ( o n )
R
VGS = 10V
1.4
V
= 15V - - - -
1.2
0.8
0.6
GS
1
0 50 100 150 200 250 300 350
© 2006 IXYS All rights reserved
Norm alized to ID = 100A
TJ = 175ºC
TJ = 25ºC
I D - Amperes
Fig. 6. Drain Cu rrent vs. Cas e
Tem perature
90
External Lead Current limit
80
70
60
50
40
- Amperes
D
I
30
20
10
0
-50 -25 0 25 50 75 100 125 150 175
T
- Degrees Centigrade
C
Page 4
IXTR 200N10P
Fig. 7. Input Adm ittance
300
250
200
150
- Amperes
D
I
100
50
TJ = 150ºC
25
-40
0
4 4 .5 5 5.5 6 6.5 7 7.5 8 8.5 9
º
C
º
C
V
- Volts
G S
Fig. 9. Sour ce Curre n t vs .
Source-To-Drain Voltage
350
300
250
200
150
- Amperes
S
I
100
T
= 150ºC
J
50
0
0.4 0.6 0.8 1 1.2 1.4 1. 6
V
S D
T
J
= 25ºC
- Volts
Fig. 8. Transconductance
140
120
100
80
- Siemens
60
f s
g
40
20
0
0 50 100 150 200 250 300 350
I
- Amperes
D
Fig. 10. Gate Ch ar g e
10
V
DS
= 100A
I
D
= 10m A
I
G
= 50V
9
8
7
6
5
- Volts
G S
4
V
3
2
1
0
0 25 50 75 100 125 150 175 200 225 250
Q G - nanoCoulombs
TJ = -40ºC
º
25
º
150
C
C
Fig. 11. Capacitance
100,000
f = 1MHz
C
10,000
1,000
iss
C
oss
C
rss
Capacitance - picoFar ads
100
0 5 10 15 20 25 30 35 40
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 12. For w ard-Bias
Safe Operating Area
1000
R
Limit
DS(on)
100µs
100
- Amperes
D
I
DC
10
1 10 100 1000
V
D S
- Volts
1m s
10m s
TJ = 175ºC
T
= 25ºC
C
Page 5
IXTR 200N10P
Fig. 13. Maximum Transient Thermal Resistance
1.000
0.100
ºC / W
-
( t h ) J C
0.010
R
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
© 2006 IXYS All rights reserved
IXYS REF: T_200N10P (88) 03-22-06-E.xls
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