Page 1
查询IXTQ69N30供应商
PolarHT
TM
IXTQ 69N30P V
IXTT 69N30P I
Power MOSFET
R
N-Channel Enhancement Mode
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
TJ= 25°C to 150°C 300 V
TJ= 25°C to 150°C; RGS = 1 MΩ 300 V
Transient ±20 V
±30 V
TC= 25°C69A
TC= 25°C, pulse width limited by T
JM
200 A
TC= 25°C69A
TC= 25°C50mJ
TC= 25°C 1.5 J
DSS
D25
DS(on)
TO-3P (IXTQ)
TO-268 (IXTT)
= 300 V
= 69 A
= 49 m
G
D
S
ΩΩ
Ω
ΩΩ
(TAB)
dv/dt I
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
, 10 V/ns
DSS
TJ≤ 150°C, RG = 4 Ω
P
D
T
J
T
JM
T
stg
T
L
M
d
TC= 25°C 500 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 °C
Mounting torque (TO-3P) 1.13/10 Nm/lb.in.
Weight TO-3P 5.5 g
TO-268 5.0 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
V
V
I
I
DSS
GS(th)
GSS
DSS
VGS= 0 V, ID = 250 µA 300 V
VDS= VGS, ID = 250µA 2.5 5.0 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V
DSS
25 µA
VGS= 0 V TJ = 125°C 250 µA
R
DS(on)
VGS= 10 V, ID = 0.5 I
D25
49 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
G
S
G = Gate D = Drain
S = Source TAB = Drain
D (TAB)
Features
!
International standard packages
!
Unclamped Inductive Switching (UIS)
rated
!
Low package inductance
- easy to drive and to protect
Advantages
!
Easy to mount
!
Space savings
!
High power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
© 204 IXYS All rights reserved
DS99078A(04/04)
Page 2
IXTQ 69N30P
IXTT 69N30P
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
J
Min. Typ. Max.
4960 pF
190 pF
25 ns
D25
25 ns
27 ns
156 180 nC
D25
32 nC
79 nC
0.25K/W
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
(T
VDS= 10 V; ID = 0.5 I
, pulse test 30 48 S
D25
VGS = 0 V, VDS = 25 V, f = 1 MHz 760 pF
VGS = 10 V, VDS = 0.5 V
DSS
, ID = I
RG = 4 Ω (External) 75 ns
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
(TO-247, TO-3P) 0.21 K/W
Source-Drain Diode Characteristic Values
(T
Symbol Test Conditions Min. typ. Max.
= 25°C, unless otherwise specified)
J
TO-3P (IXTQ) Outline
I
S
I
SM
V
SD
VGS = 0 V 69 A
Repetitive 200 A
IF = IS, VGS = 0 V, 1.5 V
TO-268 Outline
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
T
JM
IF = 25 A 250 ns
-di/dt = 100 A/µs
Q
RM
VR = 100 V 3.0 µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Page 3
V
d
d
IXTQ 69N30P
IXTT 69N30P
Fig. 1. Output Characteristics
@ 25 Deg. C
70
60
50
40
30
- Amperes
D
I
20
10
0
00.511.522.533.54
V
= 10V
GS
8V
7V
V
- Volts
D S
6V
5V
Fig. 3. Output Characteristics
@ 125 Deg. C
70
60
50
40
30
- Amperes
D
I
20
10
0
012345678
V
= 10V
GS
8V
7V
V
- Volts
D S
6V
5V
Fig. 2. Extended Output Characteristic s
@ 25 deg. C
180
160
140
120
100
80
- Amperes
D
I
60
40
20
0
0 2 4 6 8 101214161820
Fig. 4. R
V
= 10V
GS
9V
V
Normalized to I
DS(on)
- Volts
D S
8V
7V
6V
5V
D25
Junction Temperature
3
- No rma l i ze
R
2.8
2.6
2.4
2.2
1.8
1.6
1.4
D S (on)
1.2
0.8
0.6
0.4
VGS = 10V
2
ID = 69A
ID = 34.5A
1
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
alue vs.
Fig. 5. R
3.8
3.4
3
2.6
2.2
VGS = 10V
- Normalize
1.8
D S (on)
R
1.4
1
0.6
0 20 40 60 80 100 120 140 160 180
Normalized to I
DS(on)
Value vs. I
TJ = 125ºC
I D - Amperes
D
TJ = 25ºC
D25
Fig. 6. Drain Current vs. Case
Temperature
70
60
50
40
30
- Amperes
D
I
20
10
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade
© 204 IXYS All rights reserved
Page 4
IXTQ 69N30P
F
IXTT 69N30P
Fig. 7. I nput Admittance
100
90
80
70
60
50
- Amperes
40
D
I
30
20
10
TJ = 125ºC
25ºC
-40ºC
0
44.555.566.57
V
- Volts
G S
Fig. 9. Source Current vs.
Source-To-Drain Voltage
200
180
160
140
120
100
- Amperes
80
S
I
60
40
20
0
0.40.50.60.70.80.9 1 1.11.21.3
TJ = 125ºC
V
- Volts
S D
TJ = 25ºC
Fig. 8. Transconductance
100
90
80
70
TJ = -40ºC
25ºC
60
125ºC
50
- Siemens
40
f s
g
30
20
10
0
0 20406080100120140
I D - Amperes
Fig. 10. Gate Charge
10
V
= 150V
9
8
7
6
5
- V o l t s
G S
4
V
3
2
1
0
DS
I
= 34. 5 A
D
I
= 10mA
G
0 20 40 60 80 100 120 140 160
Q G - nanoCoulombs
Fig. 11. Capacitance
10000
f = 1MHz
C
iss
1000
C
oss
Capacitance - p
C
rss
100
IXYS reserves the right to change limits, test conditions, and dimensions.
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Fig. 12. Forward-Bias Safe
Operating Area
1000
R
Limit
DS
(on)
100
1ms
- A mpe re s
D
I
10
1
10 100 1000
DC
10ms
V
- Volts
D S
TC = 25ºC
25µs
Page 5
IXTQ 69N30P
Fig. 13. Maximum Transient Thermal Resistance
1.00
(ºC/W)
-
0.10
(th) J C
R
0.01
1 10 100 1000
P ul se Width - mil l iseconds
IXTT 69N30P
© 204 IXYS All rights reserved
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